Search NASA⌕ Search

SEARCH · Search NASA

Results for “ETCHING”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 325 records · Page 18

Stacked-disc structure for fluid filter or valve silencer

A stacked-disc structure is comprised of a stack of annular discs (13) scalloped along the outer edge to provide lobes (13a) and etched on one side to provide lands (13a). A web (13d) is retained in the lobes to strengthen the discs so that they will not collapse due to high fluid pressure. The stack of discs is retained by a housing (10) having a fluted interior wall to retain the ends of the lobes. End plates (11 and 12) secure the stack of discs with a spacer (14) at one end having lands (14a) on lobes which match the lobes of the stacked discs to allow fluid to flow into, or out of, the spaces between the lobes of the stacked discs. The spaces between the lands on the etched discs provide passages for fluid flow into or out of the hollow core of the stack. The height of the lands (i.e., depth of the etch) determines the size of the smallest particle that will be permitted to flow through. The stacked-disc structure may be connected to the inlet of a valve, or be incorporated into the valve housing on the inlet side of the valve seat to assure substantially constant fluid velocity, and thereby reduce valve noise when the valve is operated.

Hagler, Jr., Ray↗

Part Marking and Identification Materials' for MISSE

The Materials on International Space Station Experiment (MISSE) is being conducted with funding from NASA and the U.S. Department of Defense, in order to evaluate candidate materials and processes for flight hardware. MISSE modules include test specimens used to validate NASA technical standards for part markings exposed to harsh environments in low-Earth orbit and space, including: atomic oxygen, ultraviolet radiation, thermal vacuum cycling, and meteoroid and orbital debris impact. Marked test specimens are evaluated and then mounted in a passive experiment container (PEC) that is affixed to an exterior surface on the International Space Station (ISS). They are exposed to atomic oxygen and/or ultraviolet radiation for a year or more before being retrieved and reevaluated. Criteria include percent contrast, axial uniformity, print growth, error correction, and overall grade. MISSE 1 and 2 (2001-2005), MISSE 3 and 4 (2006-2007), and MISSE 5 (2005-2006) have been completed to date. Acceptable results were found for test specimens marked with Data Matrix(TradeMark) symbols by Intermec Inc. and Robotic Vision Systems Inc using: laser bonding, vacuum arc vapor deposition, gas assisted laser etch, chemical etch, mechanical dot peening, laser shot peening, laser etching, and laser induced surface improvement. MISSE 6 (2008-2009) is exposing specimens marked by DataLase(Registed TradeMark), Chemico technologies Inc., Intermec Inc., and tesa with laser-markable paint, nanocode tags, DataLase and tesa laser markings, and anodized metal labels.

Roxby, Donald↗

Fabrication and Modification of Nanoporous Silicon Particles

Silicon-based nanoporous particles as biodegradable drug carriers are advantageous in permeation, controlled release, and targeting. The use of biodegradable nanoporous silicon and silicon dioxide, with proper surface treatments, allows sustained drug release within the target site over a period of days, or even weeks, due to selective surface coating. A variety of surface treatment protocols are available for silicon-based particles to be stabilized, functionalized, or modified as required. Coated polyethylene glycol (PEG) chains showed the effective depression of both plasma protein adsorption and cell attachment to the modified surfaces, as well as the advantage of long circulating. Porous silicon particles are micromachined by lithography. Compared to the synthesis route of the nanomaterials, the advantages include: (1) the capability to make different shapes, not only spherical particles but also square, rectangular, or ellipse cross sections, etc.; (2) the capability for very precise dimension control; (3) the capacity for porosity and pore profile control; and (4) allowance of complex surface modification. The particle patterns as small as 60 nm can be fabricated using the state-of-the-art photolithography. The pores in silicon can be fabricated by exposing the silicon in an HF/ethanol solution and then subjecting the pores to an electrical current. The size and shape of the pores inside silicon can be adjusted by the doping of the silicon, electrical current application, the composition of the electrolyte solution, and etching time. The surface of the silicon particles can be modified by many means to provide targeted delivery and on-site permanence for extended release. Multiple active agents can be co-loaded into the particles. Because the surface modification of particles can be done on wafers before the mechanical release, asymmetrical surface modification is feasible. Starting from silicon wafers, a treatment, such as KOH dipping or reactive ion etching (RIE), may be applied to make the surface rough. This helps remove the nucleation layer. A protective layer is then deposited on the wafer. The protective layer, such as silicon nitride film or photoresist film, protects the wafer from electrochemical etching in an HF-based solution. A lithography technique is applied to pattern the particles onto the protective film. The undesired area of the protective film is removed, and the protective film on the back side of the wafer is also removed. Then the pattern is exposed to HF/surfactant solution, and a larger DC electrical current is applied to the wafers for a selected time. This step removes the nucleation layer. Then a DC current is applied to generate the nanopores. Next, a large electrical current is applied to generate a release layer. The particles are mechanically suspended in the solvent and collected by filtration or centrifuge.

Ferrari, Mauro↗

Carbon-Nanotube-Carpet Heat-Transfer Pads

Microscopic thermal-contact pads that include carpet-like arrays of carbon nanotubes have been invented for dissipating heat generated in integrated circuits and similarly sized single electronic components. The need for these or other innovative thermal-contact pads arises because the requisite high thermal conductances cannot be realized by scaling conventional macroscopic thermal-contact pads down to microscopic sizes. Overcoming limitations of conventional thermal-contact materials and components, the carbon-nanotube thermal-contact pads offer the high thermal conductivities needed to accommodate the high local thermal power densities of modern electronic circuits, without need for large clamping pressures, extreme smoothness of surfaces in contact, or gap-filling materials (e.g., thermally conductive greases) to ensure adequate thermal contact. Moreover, unlike some conventional thermal-contact components, these pads are reusable. The figure depicts a typical pad according to the invention, in contact with a rough surface on an electronic component that is to be cooled. Through reversible bending and buckling of carbon nanotubes at asperities on the rough surface, the pad yields sufficiently, under relatively low contact pressure, that thermal contact is distributed to many locations on the surface to be cooled, including valleys where contact would not ordinarily occur in conventional clamping of rigid surfaces. Hence, the effective thermal-contact area is greater than that achievable through scaling down of a macroscopic thermal-contact pad. The extremely high longitudinal thermal conductivities of the carbon nanotubes are utilized to conduct heat away from potential hot spots on the surface to be cooled. The fibers protrude from a layer of a filler material (Cu, Ag, Au, or metal-particle- filled gels), which provides both mechanical support to maintain the carbon nanotubes in alignment and thermal conductivity to enhance the diffusion of concentrated heat from the nanotubes into the larger adjacent volume of a heat sink. The array of carbon nanotubes, the filler material, and the heat sink are parts of a unitary composite structure that is fabricated as follows: 1. Using techniques that have been reported previously, the array of substantially perpendicularly oriented carbon nanotubes is grown on a metal, silicon, or other suitable thermally conductive substrate that is intended to become the heat sink. 2. By means of chemical vapor deposition, physical vapor deposition, plasma deposition, ion sputtering, electrochemical deposition, or casting from a liquid phase, some or all of the interstitial volume between carbon nanotubes is filled with the aforementioned layer of mechanically supporting, thermally conductive material. 3. To cause the carbon nanotubes to protrude the desired length from the filler material, an outer layer of filler is removed by mechanical polishing, chemical mechanical polishing, wet chemical etching, electrochemical etching, or dry plasma etching.

Li, Jun↗

Low-Power RIE of SiO2 in CHF3 To Obtain Steep Sidewalls

A reactive-ion etching (RIE) process has been developed to enable the formation of holes with steep sidewalls in a layer of silicon dioxide that covers a silicon substrate. The holes in question are through the thickness of the SiO2 and are used to define silicon substrate areas to be etched or to be built upon through epitaxial deposition of silicon. The sidewalls of these holes are required to be vertical in order to ensure that the sidewalls of the holes to be etched in the substrate or the sidewalls of the epitaxial deposits, respectively, also turn out to be vertical.

Turner, Tasha↗

Silicon Alignment Pins: An Easy Way to Realize a Wafer-to-Wafer Alignment

Submillimeter heterodyne instruments play a critical role in addressing fundamental questions regarding the evolution of galaxies as well as being a crucial tool in planetary science. To make these instruments compatible with small platforms, especially for the study of the outer planets, or to enable the development of multi-pixel arrays, it is essential to reduce the mass, power, and volume of the existing single-pixel heterodyne receivers. Silicon micromachining technology is naturally suited for making these submillimeter and terahertz components, where precision and accuracy are essential. Waveguide and channel cavities are etched in a silicon bulk material using deep reactive ion etching (DRIE) techniques. Power amplifiers, multiplier and mixer chips are then integrated and the silicon pieces are stacked together to form a supercompact receiver front end. By using silicon micromachined packages for these components, instrument mass can be reduced and higher levels of integration can be achieved. A method is needed to assemble accurately these silicon pieces together, and a technique was developed here using etched pockets and silicon pins to align two wafers together.

Jung-Kubiak, Cecile↗

Confinement of Screw Dislocations to Predetermined Lateral Positions in (0001) 4H-SiC Epilayers Using Homoepitaxial Web Growth

This paper reports initial demonstration of a cantilevered homoepitaxial growth process that places screw dislocations at predetermined lateral positions in on-axis 4H-SiC mesa epilayers. Thin cantilevers were grown extending toward the interior of hollow pre-growth mesa shapes etched into an on-axis 4H-SiC wafer, eventually completely coalescing to form roofed cavities. Each completely coalesced cavity exhibited either: 1) a screw dislocation growth spiral located exactly where final cantilever coalescence occurred, or 2) no growth spiral. The fact that growth spirals are not observed at any other position except the central coalescence point suggests that substrate screw dislocations, initially surrounded by the hollow portion of the pre-growth mesa shape, are relocated to the final coalescence point of the webbed epilayer roof. Molten potassium hydroxide etch studies revealed that properly grown webbed cantilevers exhibited no etch pits, confirming the superior crystal quality of the cantilevers.

Neudeck, Philip G.↗

System and Method for Fabricating Super Conducting Circuitry on Both Sides of an Ultra-Thin Layer

A method of fabricating circuitry in a wafer includes depositing a superconducting metal on a silicon on insulator wafer having a handle wafer, coating the wafer with a sacrificial layer and bonding the wafer to a thermally oxide silicon wafer with a first epoxy. The method includes flipping the wafer, thinning the flipped wafer by removing a handle wafer, etching a buried oxide layer, depositing a superconducting layer, bonding the wafer to a thermally oxidized silicon wafer having a handle wafer using an epoxy, flipping the wafer again, thinning the flipped wafer, etching a buried oxide layer from the wafer and etching the sacrificial layer from the wafer. The result is a wafer having superconductive circuitry on both sides of an ultra-thin silicon layer.

Brown, Ari D.↗

Interpretation of Zerodur® Strength Data

Recent, detailed fractographic analysis of Zerodur® strength test specimens prepared by linear grinding and etching with a proprietary process indicated low frequency damage to be the strength limiting defects Recent, detailed fractographic analysis of Zerodur® strength test specimens prepared by linear grinding and etching with a proprietary process indicated low frequency damage to be the strength limiting defects [1]. The 2-parameter Weibull distribution is usually assumed when working with ceramic and glasses such as Zerodur®, although 3-parameter behavior is occasionally considered [2]. Detailed statistical modeling of the Zerodur® strength data with the was initial perspective of a 3-parameter Weibull distribution gave unsatisfying results [3]. The subsequent fractographic investigation indicated [1] that the usual assumption of many small, random, noninteracting flaws [4] was not represented, but instead, less frequent, aligned flaws along etching ridges parallel to the grinding direction were present, Figure 1. It was thus concluded that the strength of Zerodur® as prepared was not Weibull distributed. The flaws represent a sparse flaw population relative to typical grinding damage, but an extensive occurrence (high frequency) of handling damage. We examine the type of distribution present and explain the appearance of a 3-parameter distribution.

Glass, ceramic, strength, Weibull, distribution, m↗

Fabrication of Phononic Filter Structures for Far-IR/sub-mm Detector Applications

A photon noise limited sub-mm/far-IR cold telescope in space will require detectors with noise equivalent power (NEP) less than 1x10-19W/Hz1/2for imaging applications and at least an order of magnitude lower for spectroscopic studies. The detector NEP can be reduced by lowering the operation temperature and improving the thermal isolation between the bolometer and a heat bath. We report on the fabrication of membrane isolated transition edge sensor bolometers incorporating compact (<50 μm) thermal isolation beams based on phononic filters. Phononic filters are created by etching quasi-periodic nanoscale structures into supporting thermo-mechanical beams. The cross-sectional dimensions of the etched features are less than the thermal wavelength at the operating temperature, enabling coherent phonon transport to take place in one dimension. The phonon stop-band can be tuned by adjusting the scale of the quasi-periodic structures. Cascading multiple filter stages can increase bandwidth and provide improved thermal isolation similar to the function of a multi-stage electrical filter. We describe the fabrication of AlMn based transition edge sensor bolometers on silicon and silicon nitride membranes isolated by one-and two-dimensional phononic filters. The phononic filters are patterned through electron beam lithography and isolated with deep reactive ion etching.

Phononic↗

Microcalorimeter Absorber Optimization for 0.2 to 12 keV X-Rays

The Advanced Telescope for High ENergy Astrophysics (ATHENA) mission requires high quantum efficiency (QE) x-ray absorption, >90.6% at 7 keV and low specific heat capacity, 0.731 pJ/K. The designed ATHENA x-ray absorbers are cantilevered square tiles (pitch of 317 microns) of 1.05 μm thick Au and 5.51 μm thick Bi electroplated films supported by stems that connect the absorber to the detector below. We discuss some of the methods used to produce x-ray absorbers meeting these specifications for ATHENA. To tune the thermal conductance of the device and the effect on the normal-to superconducting transition shape, the stems need to be small diameter and can have a weak bottle-neck connection to the substrate. A funnel shape of the stem using a proximity exposed photoresist mold has been developed to improve the strength of the connections. Further requirements on the absorbers include low levels of fine particulate remaining on the substrate after production and zero shorts between absorbers due to incomplete ion milling or trapped fine particular between absorbers. To optimize for post patterning substrate cleanliness and absorber yield, we have examined several methods of absorber fabrication. Three such methods are 1) an ion mill/wet etch combination, 2) a photoresist mold for electroplating followed by wet or dry etch to remove the seed layer, and 3) an electroplating process with leveling to smooth the surface followed by ion mill to separate the absorbers. The different combinations of wet and dry etches lead to different yields and surface appearance of the absorber sidewalls. We present results on the achieved pixel yields and the energy resolution of pixels made with the various fabrication methods. We discuss the impact of absorber patterning method on performance, uniformity, and yield.

Edward J Wassell↗

(abstract) Mechanism of Selective Porosification at Heterojunctions in Group IV Multilayer Structures

Highly selective porosification of SiGe or Ge layers is observed in multilayer Si/SiGe or Si/Ge structures grown on (100)Si. These alternating porous/nonporous structures could potentially be used to fabricate light-emitting devices. The etch-selectivity appears to be dominated by band-structure effects and other factors such as lattice strain and electrochemical potential differences play a minor role. Additional structures and electrolytic etching are being examined to confirm these results.

porosification silicon Si Ge germanium light emitt↗

320 x 256 Complementary Barrier Infrared Detector Focal Plane Array for Long-Wave Infrared Imaging

A 320 x 256 Complementary Barrier Infrared (CBIRD) focal plane array for long-wavelength infrared (LWIR) imaging is reported. The arrays were grown by molecular beam expitaxy (MBE) with a 300 period 1.9 um thick absorber. The mean dark current density of 2.2 x 10-4 A/cm2 was measured at an operating bias of 128 mV with a long wavelength cutoff of 8.8 ?m observed at 50% of the peak. The maximum quantum efficiency was 54% measured at 5.6 ?m. Operating at T = 80K, the array yielded an 81% fill factor with 97% operability. Good imagery with a mean noise equivalent different temperature (NE?T) of 18.6 mK and a mean detectivity of D* = 1.3 x 1011 cm-Hz1/2/W was achieved. The substrate was thinned using mechanical lapping and neither an AR coating nor a passivation layer was applied. This article provides the details of the fabrication process for achieving low-dark current LWIR CBIRD arrays. Discussion for an effective hard mask for excellent pattern transfer is given and appropriate mounting techniques for good thermal contact during the dry etching process is described. The challenges and differences between etching large 200 ?m test diodes and small 28 ?m FPA pixels are given.

Focal Plane Arrays (FPA)↗

Reparable, high-density microelectronic module provides effective heat sink

Reparable modular system is used for packaging microelectronic flat packs and miniature discrete components. This three-dimensional compartmented structure incorporates etched phosphor bronze sheets and frames with etched wire conductors. It provides an effective heat sink for electric power dissipation in the absence of convective cooling means.

Carlson, K. J.↗

Improved photoetching fabrication method

Photoetching method producing well-defined lines with minimum undercutting was developed for etching coolant passages in nickel sheet. Phosphate coating is applied over conventional silver plate maskant and phosphoric acid solution is used to remove silver maskant. Phosphoric acid prevents etching of silver edges and mask has sharply-defined lines.

Kistler, C. L.↗

Nuclear tracks in lunar samples

An attempt is made to relate the appearance of an etched tract to the atomic number and velocity of the ion that left it using 10 MeV/nucleon Kr beams and 6 MeV/nucleon Zn beams. It was found that the etching rate along a tract in minerals and glass is a monototonic function of ionization rate thus, making particle identification possible. Results show the following were present in lunar samples: superheavy elements, cosmic rays with z greater than 26, and solar flare particles in Surveyor glass.

Price, P. B.↗