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NASA NTRS2011

Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for Single-Event Gate Rapture and Single-Event Burnout : NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. TheSCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition/standards and requirements.The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain.

Single Event Gate Rupture↗

NASA NTRS1991

The NASA Microelectronics Space Radiation Effects Program (MSREP) at the Jet Propulsion Laboratory

The primary objective of the Microelectronics Space Radiation Effects Program (MSREP) at the Jet Propulsion Laboratory (JPL) is to assist NASA in the selection of radiation hardened microelectronic parts for insertion in NASA space systems through radiation testing and research. Prior to presenting examples of the research and testing on Single Event Effects (SEE) and Total Ionizing Dose (TID) effects, the space radiation environment and radiation requirements for the CRAFT/Cassini program, a typical JPL space project, are discussed.

Barnes, C.↗

NASA NTRS1994

Radiation-Protected Protocols For Self-Testing Of Microcircuits

Ionizing radiation need not trigger unintended self-testing. Protocols installed in certain microcircuits permitting functional self-testing do not consider possibility of inadvertent triggering by protons or energetic heavy ions in space or satellite orbit. Recommended devices be rendered immune to so-called single event effects of energetic ions in cosmic rays, flares, or trapped-charge belts surrounding Earth and some other planets. Proposed pair of stimuli be applied to device in specified manner to start self-test. Protocol can require two or more stimuli at single node, or pair of stimuli at two nodes, or some more complicated combination.

Nichols, Donald K.↗

NASA NTRS2019

Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs

This describes the mechanisms behind the failure of 4H-SiC Power MOSFETs when struck by a heavy ion. The modeled device is designed to simulate a commercially available 1200 V power MOSFET and the ion simulated is a silver ion with a Linear Energy Transfer of 46 MeV-cm2/mg commonly used in single event effect (SEE) testing. The device is shown in simulation to fail near 500 V, which is in close agreement to experiments. These simulations go to show that the failure of SiC MOSFET occurs near the interface between the epi and substrate layers due to the rapid increase of the electric field in that region and destruction of the device from impact ionization. From this, two designs were proposed and investigated that would help to mitigate the electric field in these regions and improve the device's tolerance to single-event burnout (SEB). The new designs increased the voltage at which SEB occurs from 500 V to over 900 V and increased the Ron,sp by only 5%.

Mcpherson, Joseph A.↗

NASA NTRS2004

Virtex-II Pro SEE Test Methods and Results

The objective of this coarse Single Event Effect (SEE) test is to determine the suitability of the commercial Virtex-II Pro family for use in spaceflight applications. To this end, this test is primarily intended to determine any Singe Event Latchup (SEL) susceptibilities for these devices. Secondly, this test is intended to measure the level of Single Event Upset (SEU) susceptibilities and in a general sense where they occur. The coarse SEE test was performed on a commercial XC2VP7 device, a relatively small single processor version of the Virtex-II Pro. As the XC2VP7 shares the same functional block design and fabrication process with the larger Virtex-II Pro devices, the results of this test should also be applicable to the larger devices. The XC2VP7 device was tested on a commercial Virtex-II Pro development board. The testing was performed at the Cyclotron laboratories at Texas A&M and Michigan State Universities using ions of varying energy levels and fluences.

Petrick, David↗

NASA NTRS2009

Virtex-4VQ dynamic and mitigated single event upset characterization summary

This report is the result of funding by the NASA Electronic Parts and Packaging Program (NEPP) and the combined efforts of members within the Xilinx Radiation Test Consortium (XRTC), sometimes known as the Xilinx Single Event Effects (SEE) Test Consortium. The XRTC is a voluntary association of aerospace entities, including leading aerospace companies, universitie and national laboratories, combining resources to characterize reconfigurable, field programmable gate arrays (FPGAs) for aerospace applications. Previous publications of Virtex-4 radiation results are for commercial (non-epitaxial) devices; see, for example, Refs. 1–5. A notable exception is Ref. 6, which presents XRTC upset measurements of storage elements in the PowerPC405s in the XQR4VFX60. This work represents a continuation of the efforts reported in the “Virtex-4QV Static SEU Characterization Summary” [7]. The contents of this report describe various Single Event Functional Interrupt (SEFI) and Single Event Upset (SEU) modes seen while dynamically exercising the clocked resources within Virtex-4 devices and the corresponding mitigation techniques related to the aforementioned observed SEFI modes.

Allen, Gregory↗

NASA NTRS2019

Space Radiation and Plasma Effects on Satellites and Aviation: Quantities and Metrics for Tracking Performance of Space Weather Environment Models

The Community Coordinated Modeling Center has been leading communitywide space science and space weather model validation projects for many years. These efforts have been broadened and extended via the newly launched International Forum for Space Weather Modeling Capabilities Assessment (https://ccmc.gsfc.nasa.gov/assessment/). Its objective is to track space weather models' progress and performance over time, a capability that is critically needed in space weather operations and different user communities in general. The Space Radiation and Plasma Effects Working Team of the afore mentioned International Forum works on one of the many focused evaluation topics and deals with five different subtopics (https://ccmc.gsfc.nasa.gov/assessment/topics/radiationall.php) and varieties of particle populations: Surface Charging from tens of eV to 50keV electrons and internal charging due to energetic electrons from hundreds keV to several MeVs. Single event effects from solar energetic particles and galactic cosmic rays (several MeV to TeV), total dose due to accumulation of doses from electrons (>100 keV) and protons (>1 MeV) in a broad energy range, and radiation effects from solar energetic particles and galactic cosmic rays at aviation altitudes. A unique aspect of the Space Radiation and Plasma Effects focus area is that it bridges the space environments, engineering, and user communities. The intent of the paper is to provide an overview of the current status and to suggest a guide for how to best validate space environment models for operational/engineering use, which includes selection of essential space environment and effect quantities and appropriate metrics.

Zheng, Yihua↗

NASA NTRS2012

Single Event Rates for Devices Sensitive to Particle Energy

Single event rates (SER) can include contributions from low-energy particles such that the linear energy transfer (LET) is not constant. Previous work found that the environmental description that is most relevant to the low-energy contribution to the rate is a "stopping rate per unit volume" even when the physical mechanisms for a single-event effect do not require an ion to stop in some device region. Stopping rate tables are presented for four heavy-ion environments that are commonly used to assess device suitability for space applications. A conservative rate estimate utilizing limited test data is derived, and the example of SEGR rate in a power MOSFET is presented.

conservative rate↗

NASA NTRS2024

EdgeCortix SAKURA-I Machine-Learning, PCIe Accelerator SEE Heavy Ion Test Report

To enable autonomy in space, machine-learning and computer vision applications become invaluable for sensor processing. However, these algorithms are computationally complex and unfeasible for many embedded central processing units (CPUs) and usually require external coprocessors, such as graphics processing units (GPUs) or accelerators specific to the application, including application specific integrated circuits (ASICs). In power-constrained systems, GPUs tend to consume more power than is acceptable (>40W), so lower-power accelerators have shown promise to provide the performance needed under spacecraft constraints. For radiation engineers, developing methodologies that can properly test CPUs, GPUs, and accelerators, and enable comparisons between them remains a necessary complication to solve as the devices become more complex. The methodology in this test aims to be a start in developing a baseline single-event effect (SEE) test for client-device machine learning accelerators. This category of devices do not host their own operating system. This testing campaign is a continuation of a previous 200 MeV proton test performed in January 2024. This report covers two heavy ion tests of the SAKURA-I card: one in April 2024, and one in June 2024. Additional data was needed after the April test due to ion-range issues experienced at higher linear-energy transfers (LETs). These range issues are described in more detail in Section 8. This experiment characterizes SEEs and data error susceptibility of the EdgeCortix SAKURA-I machine-learning accelerator under heavy ions. The device was monitored for single event upsets (SEUs) and single event functional interrupts (SEFIs) at the Lawrence Berkeley National Laboratory’s 88-inch cyclotron. The SAKURA-I board accelerates machine-learning inference applications on a host computer through a PCIex16 connection. For the purposes of devising an end to end automated analysis workflow for this experiment, the YOLO-V5 and SSD300 objection-detection models, and the ResNet-50, EfficientNet, and MobileNetV2 image classification models were used as a representative suite of analytical machine-learning models.

Seth S Roffe↗

NASA NTRS2013

Destructive Single-Event Failures in Diodes

In this summary, we have shown that diodes are susceptible to destructive single-event effects, and that these failures occur along the guard ring. By determining the last passing voltages, a safe operating area can be derived. By derating off of those values, rather than by the rated voltage, like what is currently done with power MOSFETs, we can work to ensure the safety of future missions. However, there are still open questions about these failures. Are they limited to a single manufacturer, a small number, or all of them? Is there a threshold rated voltage that must be exceeded to see these failures? With future work, we hope to answer these questions. In the full paper, laser results will also be presented to verify that failures only occur along the guard ring.

Casey, Megan C.↗

NASA NTRS2011

Pulsed Laser System to Simulate Effects of Cosmic Rays in Semiconductor Devices

Spaceflight system electronic devices must survive a wide range of radiation environments with various particle types including energetic protons, electrons, gamma rays, x-rays, and heavy ions. High-energy charged particles such as heavy ions can pass straight through a semiconductor material and interact with a charge-sensitive region, generating a significant amount of charge (electron-hole pairs) along their tracks. These excess charges can damage the device, and the response can range from temporary perturbations to permanent changes in the state or performance. These phenomena are called single event effects (SEE). Before application in flight systems, electronic parts need to be qualified and tested for performance and radiation sensitivity. Typically, their susceptibility to SEE is tested by exposure to an ion beam from a particle accelerator. At such facilities, the device under test (DUT) is irradiated with large beams so there is no fine resolution to investigate particular regions of sensitivity on the parts. While it is the most reliable approach for radiation qualification, these evaluations are time consuming and costly. There is always a need for new cost-efficient strategies to complement accelerator testing: pulsed lasers provide such a solution. Pulsed laser light can be utilized to simulate heavy ion effects with the advantage of being able to localize the sensitive region of an integrated circuit. Generally, a focused laser beam of approximately picosecond pulse duration is used to generate carrier density in the semiconductor device. During irradiation, the laser pulse is absorbed by the electronic medium with a wavelength selected accordingly by the user, and the laser energy can ionize and simulate SEE as would occur in space. With a tightly focused near infrared (NIR) laser beam, the beam waist of about a micrometer can be achieved, and additional scanning techniques are able to yield submicron resolution. This feature allows mapping of all of the sensitive regions of the studied device with fine resolution, unlike heavy ion experiments. The problematic regions can be precisely identified, and it provides a considerable amount of information about the circuit. In addition, the system allows flexibility for testing the device in different configurations in situ.

Aveline, David C.↗

NASA NTRS2022

Mission Radiation Environment Modeling and Analysis: Avionics Trade Study for GCD Rad-Neuro Project

The two main objectives of this trade study are characterizing the mission radiation environment for multiple Design Reference Missions (DRM) and analysis of radiation effects on avionics with the goal of producing radiation tolerant Neuromorphic Computing processor chips with innovative radiation-induced fault mitigation. The NASA process for defining radiation requirements for flight avionics is applied to this domain. The effects of trapped protons and electrons in the Van Allen radiation belts predominates in Low-Earth-Orbit (LEO) and the solar wind, solar flares and Galactic Cosmic Rays (GCRs) are the dominant radiation challenge in the open space between the planets of our solar system. The nature and energy of the particles that cause circuit upset and failure is very different in the two regimes. Two results are produced from the radiation models: determining the Total Integrated Dose (TID) experienced by avionics for a given DRM and predicting the Single Event Effects (SEE) rates for avionics during high rate exposure. These tools are applied to existing semiconductors and can be used for predicting the radiation performance of future semiconductors based on early radiation testing of new devices.

Space Radiation↗

NASA NTRS1992

Diagnosis of NMOS DRAM functional performance as affected by a picosecond dye laser

A picosec pulsed dye laser beam was at selected wavelengths successfully used to simulate heavy-ion single-event effects (SEEs) in negative channel NMOS DRAMs. A DRAM was used to develop the test technique because bit-mapping capability and previous heavy-ion upset data were available. The present analysis is the first to establish such a correlation between laser and heavy-ion data for devices, such as the NMOS DRAM, where charge collection is dominated by long-range diffusion, which is controlled by carrier density at remote distances from a depletion region. In the latter case, penetration depth is an important parameter and is included in the present analysis. A single-pulse picosecond dye laser beam (1.5 microns diameter) focused onto a single cell component can upset a single memory cell; clusters of memory cell upsets (multiple errors) were observed when the laser energy was increased above the threshold energy. The multiple errors were analyzed as a function of the bias voltage and total energy of a single pulse. A diffusion model to distinguish the multiple upsets from the laser-induced charge agreed well with previously reported heavy ion data.

Kim, Q.↗

NASA NTRS2002

REE radiation fault model: a tool for organizing and communication radiation test data and construction COTS based spacebourne computing systems

The growth in data rates of instruments on future NASA spacecraft continues to outstrip the improvement in communications bandwidth and processing capabilities of radiation-hardened computers. Sophisticated autonomous operations strategies will further increase the processing workload. Given the reductions in spacecraft size and available power, standard radiation hardened computing systems alone will not be able to address the requirements of future missions. The REE project was intended to overcome this obstacle by developing a COTS- based supercomputer suitable for use as a science and autonomy data processor in most space environments. This development required a detailed knowledge of system behavior in the presence of Single Event Effect (SEE) induced faults so that mitigation strategies could be designed to recover system level reliability while maintaining the COTS throughput advantage. The REE project has developed a suite of tools and a methodology for predicting SEU induced transient fault rates in a range of natural space environments from ground-based radiation testing of component parts. In this paper we provide an overview of this methodology and tool set with a concentration on the radiation fault model and its use in the REE system development methodology. Using test data reported elsewhere in this and other conferences, we predict upset rates for a particular COTS single board computer configuration in several space environments.

Radiation Effects Modeling COTS computers REE SEU ↗

DOE OSTI2024

The Mu2e Digitizer ReAdout Controller (DiRAC): characterization and radiation hardness

The Mu2e experiment at Fermilab will search for the neutrino-less coherent conversion of a muon into an electron in the field of a nucleus. Mu2e detectors comprise a straw tracker, an electromagnetic calorimeter and a veto for cosmic rays. The calorimeter employs 1348 Cesium Iodide crystals readout by silicon photo-multipliers and fast front-end, and digitization electronics. The digitization board is named DiRAC (Digitizer ReAdout Controller) and 140 cards are needed for the readout of the full calorimeter. The DiRACs are hosted in crates located on the external surface of calorimeter disks, inside the detector solenoid cryostat and must sustain very high radiation and magnetic field so it was necessary to fully qualify it. Several version of prototypes were validated for operation in a high-vacuum (10−4 Torr) and under a 1T magnetic field. An extensive radiation hardness qualification campaign, carried out with photons, 14 MeV neutron beams, and 200 MeV protons, certified the DiRAC design to sustain doses up to 12 Krad, neutron fluences up to ∼ 1011 1 MeV neq/cm2, and very low occurrences of single-event effects. The qualification campaigns and quality assurance procedures will be reviewed.

43 PARTICLE ACCELERATORS↗

NASA NTRS1988

Spacecraft environmental anomalies expert system

A microcomputer-based expert system is being developed at the Aerospace Corporation Space Sciences Laboratory to assist in the diagnosis of satellite anomalies caused by the space environment. The expert system is designed to address anomalies caused by surface charging, bulk charging, single event effects and total radiation dose. These effects depend on the orbit of the satellite, the local environment (which is highly variable), the satellite exposure time and the hardness of the circuits and components of the satellite. The expert system is a rule-based system that uses the Texas Instruments Personal Consultant Plus expert system shell. The completed expert system knowledge base will include 150 to 200 rules, as well as a spacecraft attributes database, an historical spacecraft anomalies database, and a space environment database which is updated in near real-time. Currently, the expert system is undergoing development and testing within the Aerospace Corporation Space Sciences Laboratory.

Koons, H. C.↗

NASA NTRS1991

Preliminary results from the heavy ions in space experiment

The Heavy Ions In Space (HIIS) experiment is intended to provide a deep survey of intensely ionizing particles in low earth orbit. Intensely ionizing particles produce single event effects in microelectronic components and are now recognized as the principal cause of spacecraft anomalies. These particles also make an important contribution to radiation doses. Besides the practical applications, HIIS data will be used to study several important scientific questions. By measuring heavy ions that stop in HIIS, the anomalous component of cosmic rays can be studied, evidence can be searched for of heavy ions trapped in the earth's magnetic field and by comparing HISS data with observations from outside the magnetosphere, the mean ionic charge state can be determined of solar energetic particles. HIIS will also record relativistic ultraheavy galactic cosmic rays. Their elemental composition will be measured from tin to uranium. Results are presented on the elemental resolution for stopping heavy ions and relativistic heavy ions.

Adams, J. H., Jr.↗

NASA NTRS1991

Update on parts SEE suspectibility from heavy ions

JPL and the Aerospace Corporation have collected a fourth set of heavy ion single event effects (SEE) test data. Trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts are displayed. All data are conveniently divided into two tables: one for MOS devices, and one for a shorter list of recently tested bipolar devices. In addition, a new table of data for latchup tests only (invariably CMOS processes) is given.

Nichols, D. K.↗