SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
The Jet Propulsin Laboratory (JPL), a division of the California Institute of Technology, performs research, development, and related activities for the National Aeronautics and Space Administration (NASA). JPL is NASA's lead center for unmanned exploration of the solar system and beyond.
Recent advances in the development of several micropropulsion components performed at JPL for microscpacecraft applications are reported upon.
Explore the source record for details and available documents.
Contrary to MnO2 tantalum capacitors, transient processes in polymer tantalum capacitors after voltage application might result in anomalously high, ampere-level currents when a capacitor might appear as a short circuit for a time that is much greater than a transient time in MnO2 capacitors. In this work, conditions that cause anomalous transients in different types of polymer tantalum capacitors have been analyzed. Related phenomena that included increasing of capacitance and dissipation factors with voltage, parametric surge current test failures without damage to capacitors, and increasing leakage currents at low temperatures are described. It has been shown that anomalous transients increased substantially with applied voltage and with reduction of moisture content in capacitors caused by storage or operation at high temperatures and/or in vacuum. Different types of capacitors exhibited different level of transients and modification of conductive polymers or process of their application might decrease transient leakage currents substantially. For space applications, the risk of failures related to anomalous transients can be mitigated by special testing procedures to select parts with an acceptable level of transients and by voltage derating.
The advanced miniaturization of all the on-board spacecraft functions into a highly integrated, modular, and reliable architecture is a major enabling technology for future deep-space and Earth orbiting science missions.
In this paper a method for achieving integrated power electronics is discussed. Furture spacecraft are projected to feature high levels of intergration at the system level particularly in areas not typically associated with an integrated approach.
Availability of board level solder joint reliability information is critical to the acceptance of CSPs as alternative packages. This paper will review different CSPs as well as their assembly reliability.
This paper describes the functionality of four application specific integrated circuits (ASICs) developed for the Cassini spacecraft.
Not Available
Magnetically controlled states in quantum materials are central to their unique electronic and magnetic properties. However, direct momentum-resolved visualization of these states via angle-resolved photoemission spectroscopy (ARPES) has been hindered by the disruptive effect of magnetic fields on photoelectron trajectories. Here, we introduce an in situ method that is, in principle, capable of applying magnetic fields up to 1 T. This method uses substrates composed of nanomagnetic metamaterial arrays with alternating polarity. Such substrates can generate strong, homogeneous, and spatially confined fields applicable to samples with thicknesses up to the micron scale, enabling ARPES measurements under magnetic fields with minimal photoelectron trajectory distortion. Here, we demonstrate this minimal distortion with ARPES data taken on monolayer graphene. Our method paves the way for probing magnetic field-dependent electronic structures and studying field-tunable quantum phases with state-of-the-art energy-momentum resolutions.
Photoconductive emitters for terahertz generation hold promise for highly efficient down-conversion of optical photons because it is not constrained by the Manley-Rowe relation. Existing terahertz photoconductive devices, however, faces limits in efficiency due to the semiconductor properties of commonly used GaAs materials. Here, we demonstrate that large bandgap semiconductor GaN, characterized by its high breakdown electric field, facilitates the highly efficient generation of terahertz waves in a coplanar stripline waveguide. Towards this goal, we investigated the excitonic contribution to the electro-optic response of GaN under static electric field both through experiments and first-principles calculations, revealing a robust excitonic Stark shift. Using this electro-optic effect, we developed a novel ultraviolet pump-probe spectroscopy for in-situ characterization of the terahertz electric field strength generated by the GaN photoconductive emitter. Our findings show that terahertz power scales quadratically with optical excitation power and applied electric field over a broad parameter range. We achieved an optical-to-terahertz conversion efficiency approaching 100% within the 0.03–1 THz bandwidth at the highest bias field (116 kV/cm) in our experiment. Further optimization of GaN-based terahertz generation devices could achieve even greater optical-to-terahertz conversion efficiencies.