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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Virtex-II Pro SEE Test Methods and Results

The Xilinx Virtex-II Pro is a platform FPGA that embeds multiple microprocessors within the fabric of an SRAM-based reprogrammable FPGA. The variety and quantity of resources provided by this family of devices make them very attractive for spaceflight applications. However, these devices will be susceptible to single event effects (SEE), which must be mitigated. To use the Virtex-II Pro reliably in space applications, these devices must first be tested to determine if they are susceptible to single event latchup (SEL), the degree to which they are susceptible to single event upsets (SEU) and single event transients (SET), and how these effects are manifested in the device. With this information, mitigations schemes can be developed and tested that address the specific susceptiblities of these devices. This initial SEE test uses a commercial off the shelf Virtex-II Pro evaluation board, with a single processor XC2VP7 FPGA. The FPGA on this board is an acid etched device, which can be partially covered with a shield. The shield covers a portion of the logic, routing, and memory resources along with some of the RocketIO transceivers. The processor, along with a large portion of logic, routing, memory, and transceivers are left exposed. This test will be performed at the Cyclotron Laboratories at Texas A&M University and Michigan State University using ions of varying energy levels and fluencies.

Petrick, David↗
NASA NTRS2015

Compendium of Current Single Event Effects for Candidate Spacecraft Electronics for NASA

NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment are often limited by their susceptibility to single event effects (SEE). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is and adequate understanding of the test condition is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), and single-event transient (SET). For total ionizing dose (TID) and displacement damage dose (DDD) results, see a companion paper submitted to the 2015 Institute of Electrical and Electronics Engineers (IEEE) Nuclear and Space Radiation Effects Conference (NSREC) Radiation Effects Data Workshop (REDW) entitled "compendium of Current Total Ionizing Dose and Displacement Damage for Candidate Spacecraft Electronics for NASA by M. Campola, et al.

spacecraft electronics↗
NASA NTRS2021

Angle Dependence of Focused X-Ray-Induced Single Event Transients in an Epitaxial Silicon Diode

Focused X-Ray single event transient (SET) experiments are performed at small angles on an epitaxial silicon diode at two reverse bias conditions. For both biases, the collected charge and peak current results follow the cosine law, while the transient fall time remains independent of incident angle. This demonstrates that only the amount of charge being generated is affected by angle and not the fundamental device response.

Heavy ions↗
NASA NTRS2022

Angle Dependence of Focused X-Ray-Induced Single Event Transients in an Epitaxial Silicon Diode

Focused X-Ray single event transient (SET) experiments are performed at small angles on an epitaxial silicon diode at two reverse bias conditions. For both biases, the collected charge and peak current results follow the cosine law, while the transient fall time remains independent of incident angle. This demonstrates that only the amount of charge being generated is affected by angle and not the fundamental device response for these relatively large devices.

Focused X-ray↗
NASA NTRS2006

The Effectiveness of TAG or Guard-Gates in SET Suppression Using Delay and Dual-Rail Configurations at 0.35 microns

Design options for decreasing the susceptibility of integrated circuits to Single Event Upset (SEU) fall into two categories: (1) increasing the critical charge to cause an upset at a particular node, and (2) employing redundancy to mask or correct errors. With decreasing device sizes on an Integrated Circuit (IC), the amount of charge required to represent a logic state has steadily reduced. Critical charge methods such as increasing drive strength or increasing the time required to change state as in capacitive or resistive hardening or delay based approaches extract a steadily increasing penalty as a percentage of device resources and performance. Dual redundancy is commonly assumed only to provide error detection with Triple Modular Redundancy (TMR) required for correction, but less well known methods employ dual redundancy to achieve full error correction by voting two inputs with a prior state to resolve ambiguity. This requires special circuits such as the Whitaker latch [1], or the guard-gate [2] which some of us have called a Transition AND Gate (TAG) [3]. A 2-input guard gate is shown in Figure 1. It is similar to a Muller Completion Element [4] and relies on capacitance at node "out" to retain the prior state when inputs disagree, while eliminating any output buffer which would be susceptible to radiation strikes. This paper experimentally compares delay based and dual rail flip-flop designs wherein both types of circuits employ guard-gates to optimize layout and performance, and draws conclusions about design criteria and suitability of each option. In both cases a design goal is protection against Single Event Transients (SET) in combinational logic as well as SEU in the storage elements. For the delay based design, it is also a goal to allow asynchronous clear or preset inputs on the storage elements, which are often not available in radiation tolerant designs.

Shuler, Robert L.↗
NASA NTRS2000

A Compendium of Recent Optocoupler Radiation Test Data

We present a compendium of optocoupler radiation test data including neutron, proton and heavy ion Displacement Damage (DD), Single Event Transients (SET) and Total Ionizing Dose (TID). Proton data includes ionizing and non-ionizing damage mechanisms.

Label, K. A.↗
NASA NTRS2002

Heavy Ion Transient Characterization of a Photobit Hardened-by-Design Active Pixel Sensor Array

This paper presents heavy ion data on the single event transient (SET) response of a Photobit active pixel sensor (APS) four quadrant test chip with different radiation tolerant designs in a standard 0.35 micron CMOS process. The physical design techniques of enclosed geometry and P-channel guard rings are used to design the four N-type active photodiode pixels as described in a previous paper. Argon transient measurements on the 256 x 256 chip array as a function of incident angle show a significant variation in the amount of charge collected as well as the charge spreading dependent on the pixel type. The results are correlated with processing and design information provided by Photobit. In addition, there is a large degree of statistical variability between individual ion strikes. No latch-up is observed up to an LET of 106 MeV/mg/sq cm.

Marshall, Paul W.↗
NASA NTRS2006

Single Event Transients in Voltage Regulators for FPGA Power Supply Applications

As with other bipolar analog devices, voltage regulators are known to be sensitive to single event transients (SET). In typical applications, large output capacitors are used to provide noise immunity. Therefore, since SET amplitude and duration are generally small, they are often of secondary importance due to this capacitance filtering. In low voltage applications, however, even small SET are a concern. Over-voltages may cause destructive conditions. Under-voltages may cause functional interrupts and may also trigger electrical latchup conditions. In addition, internal protection circuits which are affected by load as well as internal thermal effects can also be triggered from heavy ions, causing dropouts or shutdown ranging from milliseconds to seconds. In the case of FPGA power supplies applications, SETS are critical. For example, in the case of Actel FPGA RTAX family, core power supply voltage is 1.5V. Manufacturer specifies an absolute maximum rating of 1.6V and recommended operating conditions between 1.425V and 1.575V. Therefore, according to the manufacturer, any transient of amplitude greater than 75 mV can disrupt normal circuit functions, and overvoltages greater than 100 mV may damage the FPGA. We tested five low dropout voltage regulators for SET sensitivity under a large range of circuit application conditions.

Poivey, Christian↗
NASA NTRS2006

SEU and Test Considerations for FPGA Devices

This viewgraph presentation provides an overview of Field Programmable Gate Arrays (FPGAs), what they are, implementations in space missions, and current available technologies. Single Event Upsets (SEUs) and Single Event Transients (SETs) are discussed in relation to their effects on FPGAs. Testing goals, considerations, and data analysis are reviewed.

Berg, Malanie↗
NASA NTRS2008

Total Dose Effects on Single Event Transients in Linear Bipolar Systems

Single Event Transients (SETs) originating in linear bipolar integrated circuits are known to undermine the reliability of electronic systems operating in the radiation environment of space. Ionizing particle radiation produces a variety of SETs in linear bipolar circuits. The extent to which these SETs threaten system reliability depends on both their shapes (amplitude and width) and their threshold energies. In general, SETs with large amplitudes and widths are the most likely to propagate from a bipolar circuit's output through a subsystem. The danger these SET pose is that, if they become latched in a follow-on circuit, they could cause an erroneous system response. Long-term exposure of linear bipolar circuits to particle radiation produces total ionizing dose (TID) and/or displacement damage dose (DDD) effects that are characterized by a gradual degradation in some of the circuit's electrical parameters. For example, an operational amplifier's gain-bandwidth product is reduced by exposure to ionizing radiation, and it is this reduction that contributes to the distortion of the SET shapes. In this paper, we compare SETs produced in a pristine LM124 operational amplifier with those produced in one exposed to ionizing radiation for three different operating configurations - voltage follower (VF), inverter with gain (IWG), and non-inverter with gain (NIWG). Each configuration produces a unique set of transient shapes that change following exposure to ionizing radiation. An important finding is that the changes depend on operating configuration; some SETs decrease in amplitude, some remain relatively unchanged, some become narrower and some become broader.

Buchner, Stephen↗
NASA NTRS2008

The Effects of Low Dose-Rate Ionizing Radiation on the Shapes of Transients in the LM124 Operational Amplifier

Shapes of single event transients (SETs) in a linear bipolar circuit (LM124) change with exposure to total ionizing dose (TID) radiation. SETs shape changes are a direct consequence of TID-induced degradation of bipolar transistor gain. A reduction in transistor gain causes a reduction in the drive current of the current sources in the circuit, and it is the lower drive current that most affects the shapes of large amplitude SETs.

Buchner, Stephen↗
NASA NTRS2011

Single Event Effects (SEE) Testing of Embedded DSP Cores within Microsemi RTAX4000D Field Programmable Gate Array (FPGA) Devices

Motivation for this work is: (1) Accurately characterize digital signal processor (DSP) core single-event effect (SEE) behavior (2) Test DSP cores across a large frequency range and across various input conditions (3) Isolate SEE analysis to DSP cores alone (4) Interpret SEE analysis in terms of single-event upsets (SEUs) and single-event transients (SETs) (5) Provide flight missions with accurate estimate of DSP core error rates and error signatures.

Perez, Christopher E.↗
NASA NTRS2021

SEE Test Report for Arizona Microtek AZ88923 High Speed Limiting Post Amplifier

The primary purpose of this testing is to characterize the Texas Instruments AZ88923 post amplifier for susceptibility to single-event latchup (SEL) and other destructive Single-Event Effects (SEE). These data will be used to assess the destructive SEE risk for the OSIRIS-REx Laser Altimeter (OLA). A secondary goal is to assess the susceptibility of the post amplifier to single-event transients (SET) and other nondestructive SEE. In particular, the loss-of-signal feature could give rise to some significant anomalies. However, it is not used on OLA.

Raymond Ladbury↗
NASA NTRS2022

Single-Event Effects Test Report Texas Instruments, OPA842 Low-Noise Operational Amplifier

Testing was done to characterize the Texas Instruments Operational Amplifiers OPA842 single event effects (SEE) response. The primary SEE concerns for this device are single event latchup (SEL) and single event transients (SETs). Testing focused on determining susceptibility to SEL and characterizing the SET response. Testing occurred on November 11, 2022.

Kaitlyn L Ryder↗