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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Development and fabrication of a high current, fast recovery power diode

A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

Berman, A. H.↗
NASA NTRS1999

Deployment of Autonomous GPS Stations in Marie Byrd Land, Antarctica

During the 1998-1999 Antarctic field season, we installed three autonomous GPS stations in Marie Byrd Land, West Antarctica to measure glacio-isostatic rebound and rates of spreading across the West Antarctic Rift System. The systems collect data throughout the entire year and therefore must function during the warm, relatively mild summer, and cold, harsh winters. They are powered by gel cell batteries that are charged by wind and solar power. The system includes dual data logging capability. We log data at 5 minute intervals within the receiver and at 30 second intervals to a serial data logger. We do not require 365 days of continuous data for well determined crustal velocities, but rather long periods (greater than 24 hours) of continuous data distributed throughout the year. Therefore, for simplicity, we designed the system to accept occasional data interruptions. The batteries, in addition to supplying power, act as a thermal capacitive heat storage device to help regulate the temperatures within the system. This storage system absorbs the majority of the 10-15 watts of power from the receiver and 5 watts from the data logger which helps to maintain temperature for long periods of time. Power is switched off when the temperature within the system enclosure reaches 50'C and is reconnected at 20 C. If battery voltage drops too low the batteries will freeze. Therefore, we cut the power off when the batteries drop to a low voltage of 12.45V. Power is restored at 13.2V. The temperature and power hysteresis allows for a minimum of several days of data to be collected before system shutdowns. A check of all three stations in late January 1999 indicated that the thermal and power control systems are performing as expected. We plan to implement satellite telemetry to the systems during the 2000-2001 season following a year of development.

Donnellan, Andrea↗
NASA NTRS2013

Complementary Barrier Infrared Detector (CBIRD) Contact Methods

The performance of the CBIRD detector is enhanced by using new device contacting methods that have been developed. The detector structure features a narrow gap adsorber sandwiched between a pair of complementary, unipolar barriers that are, in turn, surrounded by contact layers. In this innovation, the contact adjacent to the hole barrier is doped n-type, while the contact adjacent to the electron barrier is doped p-type. The contact layers can have wider bandgaps than the adsorber layer, so long as good electrical contacts are made to them. If good electrical contacts are made to either (or both) of the barriers, then one could contact the barrier(s) directly, obviating the need for additional contact layers. Both the left and right contacts can be doped either n-type or ptype. Having an n-type contact layer next to the electron barrier creates a second p-n junction (the first being the one between the hole barrier and the adsorber) over which applied bias could drop. This reduces the voltage drop over the adsorber, thereby reducing dark current generation in the adsorber region.

Ting, David Z.↗
NASA NTRS2004

Volume and Mass Estimation of Three-Phase High Power Transformers for Space Applications

Spacecraft historically have had sub-1kW(sub e), electrical requirements for GN&C, science, and communications: Galileo at 600W(sub e), and Cassini at 900W(sub e), for example. Because most missions have had the same order of magnitude power requirements, the Power Distribution Systems (PDS) use existing, space-qualified technology and are DC. As science payload and mission duration requirements increase, however, the required electrical power increases. Subsequently, this requires a change from a passive energy conversion (solar arrays and batteries) to dynamic (alternator, solar dynamic, etc.), because dynamic conversion has higher thermal and conversion efficiencies, has higher power densities, and scales more readily to higher power levels. Furthermore, increased power requirements and physical distribution lengths are best served with high-voltage, multi-phase AC to maintain distribution efficiency and minimize voltage drops. The generated AC-voltage must be stepped-up (or down) to interface with various subsystems or electrical hardware. Part of the trade-space design for AC distribution systems is volume and mass estimation of high-power transformers. The volume and mass are functions of the power rating, operating frequency, the ambient and allowable temperature rise, the types and amount of heat transfer available, the core material and shape, the required flux density in a core, the maximum current density, etc. McLyman has tabulated the performance of a number of transformers cores and derived a "cookbook" methodology to determine the volume of transformers, whereas Schawrze had derived an empirical method to estimate the mass of single-phase transformers. Based on the work of McLyman and Schwarze, it is the intent herein to derive an empirical solution to the volume and mass estimation of three-phase, laminated EI-core power transformers, having radiated and conducted heat transfer mechanisms available. Estimation of the mounting hardware, connectors, etc. is not included.

Kimnach, Greg L.↗
NASA NTRS1996

Constant-Current Source For Measuring Low Resistances

Constant-current source constructed for measuring electrical resistances up to few ohms in power-supply equipment. By setting current at 1 A and measuring resulting voltage drop across item under test, one obtains voltage reading numerically equal to resistance in ohms.

Toomath, Robert L.↗
DOE OSTI2025

Vertical 2T-nC FeRAM Demonstration: BEOL Read Transistor for 4F 2 Memory Strings and Two-Terminal Selector Design for Polarization Disturb Mitigation

In this work, we demonstrate a vertical 2T-nC FeRAM with a back-end-of-line (BEOL) read transistor (T R ) for 4F 2 string and propose a selector design to mitigate polarization disturb in passive capacitor crossbar arrays. Key contributions include: 1) successful integration and operation composed of a Si MOSFET write transistor (T W ), 3-layer cylindrical ferroelectric capacitors, and Si-doped In 2 O 3 BEOL T R , demonstrating the feasibility of 4F 2 2T−nC string; 2) introducing nonlinearity into the capacitor stack to suppress ferroelectric voltage drop under inhibition biases while maintaining sufficient write voltage, reducing disturbance; 3)modeling and experimental validation of inserting a metalsemiconductor (a-Si)-metal (MSM) selector into the capacitor in mitigating the disturb, particularly achieving 9x reduction of disturb after 10 6 cycles in the V W /2 scheme.

42 ENGINEERING↗
NASA NTRS2003

Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

Lebron-Velilla, Ramon C.↗
NASA NTRS1978

Calibration target for temperature radiometer

Technique measures temperature/voltage drop characteristics of very thin filament. With constant current running through filament, voltage drop is recorded at various temperatures, as measured by calibrated thermocouple.

Edwards, S. F.↗
DOE OSTI2025

Combined Effects of Electric Vehicle Charging and Rooftop Solar Integration on Voltage Imbalance in Residential Distribution Networks

Residential electric vehicle (EV) chargers, as single phase loads, contribute to unbalanced voltage drops across phases, while rooftop solar systems, as single phase generators, can exacerbate voltage imbalance by causing unbalanced voltage increases. This paper investigates combined effects of residential EV charging and rooftop solar generation on voltage imbalance in residential distribution grids. The study examines these simultaneous impacts using the IEEE 8500-node test system, enhanced with a secondary network to realistically model the EV chargers and rooftop solar integration. To account for the variability and uncertainty in the EV charging loads and solar generation, a Monte Carlo approach is employed to capture and quantify the simultaneous impact of the EV charging and rooftop solar integration. In this approach, multiple influencing factors are considered, including state-of-charge (SOC), maximum charging power levels, and geographic distribution of chargers. The results provide practical insights for utilities and stakeholders, offering expectations for planning and operating strategies that effectively manage the increasing adoption of EVs and solar power while maintaining grid reliability.

Choi, Jongchan [ORNL] (ORCID:000000025952455X)↗
NASA NTRS2004

Silicon Carbide Diodes Performance Characterization at High Temperatures

NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

Lebron-Velilla, Ramon C.↗
NASA NTRS1983

Improved transistor-controlled and commutated brushless DC motors for electric vehicle propulsion

The development, design, construction, and testing processes of two electronically (transistor) controlled and commutated permanent magnet brushless dc machine systems, for propulsion of electric vehicles are detailed. One machine system was designed and constructed using samarium cobalt for permanent magnets, which supply the rotor (field) excitation. Meanwhile, the other machine system was designed and constructed with strontium ferrite permanent magnets as the source of rotor (field) excitation. These machine systems were designed for continuous rated power output of 15 hp (11.2 kw), and a peak one minute rated power output of 35 hp (26.1 kw). Both power ratings are for a rated voltage of 115 volts dc, assuming a voltage drop in the source (battery) of about 5 volts. That is, an internal source voltage of 120 volts dc. Machine-power conditioner system computer-aided simulations were used extensively in the design process. These simulations relied heavily on the magnetic field analysis in these machines using the method of finite elements, as well as methods of modeling of the machine power conditioner system dynamic interaction. These simulation processes are detailed. Testing revealed that typical machine system efficiencies at 15 hp (11.2 kw) were about 88% and 84% for the samarium cobalt and strontium ferrite based machine systems, respectively. Both systems met the peak one minute rating of 35 hp.

Demerdash, N. A.↗
NASA NTRS1976

Diminiode thermionic conversion with 111-iridium electrodes

Preliminary data indicating thermionic-conversion potentialities for a 111-iridium emitter and collector spaced 0.2 mm apart are presented. These results comprise output densities of current and of power as functions of voltage for three sets of emitter, collector, and reservoir temperatures: 1553, 944, 561 K; 1605, 898, 533 K; and 1656, 1028, 586 K. For the 1605 K evaluation, estimates produced work-function values of 2.22 eV for the emitter and 1.63 eV for the collector with a 2.0-eV barrier index (collector work function plus interelectrode voltage drop) corresponding to the maximum output of 5.5 W/sq cm at 0.24 volt. The current, voltage curve for the 1656 K 111-iridium diminiode yields a 6.2 W/sq cm maximum at 0.25 volt and is comparable with the 1700 K envelope for a diode with an etched-rhenium emitter and a 0.025-mm electrode gap made by TECO and evaluated by NASA.

Koeger, E. W.↗
NASA NTRS2009

Improved Signal Chains for Readout of CMOS Imagers

An improved generic design has been devised for implementing signal chains involved in readout from complementary metal oxide/semiconductor (CMOS) image sensors and for other readout integrated circuits (ICs) that perform equivalent functions. The design applies to any such IC in which output signal charges from the pixels in a given row are transferred simultaneously into sampling capacitors at the bottoms of the columns, then voltages representing individual pixel charges are read out in sequence by sequentially turning on column-selecting field-effect transistors (FETs) in synchronism with source-follower- or operational-amplifier-based amplifier circuits. The improved design affords the best features of prior source-follower-and operational- amplifier-based designs while overcoming the major limitations of those designs. The limitations can be summarized as follows: a) For a source-follower-based signal chain, the ohmic voltage drop associated with DC bias current flowing through the column-selection FET causes unacceptable voltage offset, nonlinearity, and reduced small-signal gain. b) For an operational-amplifier-based signal chain, the required bias current and the output noise increase superlinearly with size of the pixel array because of a corresponding increase in the effective capacitance of the row bus used to couple the sampled column charges to the operational amplifier. The effect of the bus capacitance is to simultaneously slow down the readout circuit and increase noise through the Miller effect.

Pain, Bedabrata↗
NASA NTRS1991

Performance characteristics of lithium primary cells after controlled storage

A program was initiated to investigate the effects of storage on the performance of lithium primary cells. Two types of liquid cathode cells were chosen to investigate these effects. The cell types included Li-SOCl2/BCX cells, Li-SO2 cells from two different manufacturers, and a small sample size of 8-year-old Li-SO2 cells. The following measurements are performed at each test interval: open circuit voltage, resistance and weight, microcalorimetry, ac impedance, capacity, and voltage delay. The authors examine the performance characteristics of these cells after one year of controlled storage at two temperatures (10 and 30 C). The Li-SO2 cells experienced little to no voltage and capacity degradation after one year storage. The Li-SOCl2/BCX cells exhibited significant voltage and capacity degradation after 30 C storage. Predischarging shortly prior to use appears to be an effective method of reducing the initial voltage drop. Studies are in progress to correlate ac impedance and microcalorimetry measurements with capacity losses and voltage delay.

Deligiannis, F.↗
NASA NTRS1977

Reconditioning experience at Marshall Space Flight Center

Problems encountered on Skylab prompted the development of a reconditioning circuit which involves a DC to DC converter, a circuit sensing device, and the capability of switching several size reconditioners onto a circuit. Across each cell there is a full bridge rectifier. During battery discharge, if there is low cell voltage, the reconditioning systems holds that voltage up and permits discharge to continue on the system. When the cell is good, the voltage is up about one volt, the diodes are back, or reversed biased, and the current drawn out of the system is very low. The system has a standby power thrown at about one volt. As the voltage drops on a cell, the circuit strts picking up the load and helps hold the overall battery voltage up.

Paschal, L. E.↗
NASA NTRS2002

Modeling of Gate Bias Modulation in Carbon Nanotube Field-Effect-Transistor

The threshold voltages of a carbon-nanotube (CNT) field-effect transistor (FET) are studied. The CNT channel is so thin that there is no voltage drop perpendicular to the gate electrode plane, and this makes the device characteristics quite unique. The relation between the voltage and the electrochemical potentials, and the mass action law for electrons and holes are examined in the context of CNTs, and inversion and accumulation threshold voltages (V(sub Ti), and V(sub Ta)) are derived. V(sub Ti) of the CNTFETs has a much stronger doping dependence than that of the metal-oxide- semiconductor FETs, while V(sub Ta) of both devices depends weakly on doping with the same functional form.

Toshishige, Yamada↗
NASA NTRS1990

GTO/FET Cascode Three-Terminal Switch

Neither external bias nor energy-storage components required. Three-terminal semiconductor switching circuit features high switching speed, extremely high turnoff safe operating area (area in current-vs-voltage plane), moderately low forward ("on"-state) voltage drop, and efficient utilization of silicon in design of components. Includes gate-turn-off thyristor (GTO) and low-voltage (low-on-resistance) field-effect transistor (FET-1) connected in series to form cascode pair. Made of commercially available, discrete components, as hybrid circuit package or as monolithic integrated circuit.

Rippel, Wally E.↗
DOE OSTI2025

Small-Signal Stability of Grid-Forming Inverters Using Current-Limiting and Frequency Stabilization

This paper presents a small-signal stability analysis of grid-forming (GFM) inverters under current-limiting conditions. It examines how adjustments in virtual impedance angles, implemented through advanced current-limiting and frequency stabilization techniques, influence small-signal stability. This paper studies a GFM inverter control integrating a fictitious power technique stabilizing primary control by adding a virtual power term and a hybrid current limiter integrating virtual impedance in the anti-wind-up feedback with current reference saturation limiting. A small-signal model is developed to assess the impact of virtual impedance angles on GFM inverter dynamics during grid disturbances, such as voltage drops. The findings indicate that although increasing the virtual impedance angle (to make it more inductive) enhances large-signal stability and voltage support during faults, it can induce oscillations and lead to instability if the angle exceeds certain thresholds. Based on the small-signal models, this paper provides design considerations for the current-limiter impedances to ensure reliable GFM inverter behavior under grid disturbances while maintaining small-signal stability.

current limiting↗