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Results are presented of a 2,000 hour cycled life test program conducted to determine the effect of short term surge current screening on approximately 47 micron f/volt solid tantalum capacitors. The format provides average values and standard deviations of the parameters, capacitance, dissipation factor, and equivalent series resistance at 120 Hz, 1KHz, abd 40 KHz.
Oxides applied by a "spin-on" process have been used to fabricate capacitors on gallium arsenide and indium phosphide substrates: they might also be used with other compounds of elements in groups III to V of the periodic table. The III-to-V materials are attractive for integrated circuits because they offer responses potentially six times faster than silicon.
Several key electrical and environmental parameters of latest technology aluminum electrolytic and solid tantalum capacitors were evaluated in terms of price fluctuations of tantalum metal. Performance differences between solid tantalums and aluminum electrolytics are examined.
The ultimate capabilities of an all tantalum capacitor were determined and evaluated. The evaluation included: 175 C life; 100 cycle thermal shock; 70 g random vibration; 3000 g shock; and 90 C ase ripple current.
Application techniques for determining performance and ratings of cased capacitors under combined operation as a function of the actual operating conditions are described. Thermal impedances between the case and external environment and between the internal hot spot and case are taken into account.
The reliability of one lot of high K multilayer ceramic capacitors was evaluated using accelerated life testing. The degradation in insulation resistance was characterized as a function of voltage and temperature. The times to failure at a voltage-temperature stress conformed to a lognormal distribution with a standard deviation approximately 0.5.
The results of an analysis into the cause of the non-solderability of multiple defective part lots from two capacitor manufacturers are described. This analysis consisted of visual, scanning electron microscopic, surface, and metalographic examinations and analyses. The results indicated that non-solderability results from areas of excess porosity in the termination which are caused by segregation of ink constituents during manufacturing. This segregation can be minimized by proper monitoring and control of process variables; where excess porosity does occur, solderability can be improved by proper precleaning of parts.
The basic steps in the failure analysis of discrete capacitors used in electronic circuit boards and hybrid assemblies are described. These steps include: visual examination; functional test; disassembly; isolation of the failure site; and documentation.
The integrity of the metal-poly oxide and the gate oxide was evaluated for several 5-micron CMOS-bulk processes. The pinhole array capacitor consists of diffused and poly fingers that form a network of MOS transistors (elements), which are capped by a deposited oxide and metal layer. The smallest structure used in this study contained about 15,000 elements and the largest structure contained about 68,000 elements. Each structure was divided into several subarrays. The structures are placed a number of times on each wafer. From a yield analysis of the subarrays, the elements per defect were found to be typically in excess of 50,000 elements/defect for the metal-poly oxide and 100,000 elements/defect for the gate oxide. From the switching behavior of the transistors, the gate oxide defects were tentatively identified as gate-to-body shorts rather than gate-to-diffusion shorts.
The integrity of the metal-poly oxide and the gate oxide was evaluated for several 5-micron CMOS-bulk process. The pinhole array capacitor consists of diffused and poly fingers that form a network of MOS transistors (elements), which are capped by a deposited oxide and metal layer. The smallest structure used contained about 15,000 elements and the largest structure contained about 68,000 elements. Each structure was divided into several subarrays. The structures are placed a number of times on each wafer. From a yield analysis of the subarrays, the elements per defect were found to be typically in excess of 50,000 elements/defect for the metal-poly oxide and 100,000 elements/defect for the gate oxide. From the switching behavior of the transistors, the gate oxide defects were tentatively identified as gate-to-body shorts rather than gate-to-diffusion shorts.
Data gathered on key design parameters. Report discusses study of electrical and mechanical properties of irradiated polymer dielectric materials. Data compiled for use by designers of high-energy-density capacitors that operate in presence of ionizing radiation. Study focused on polycarbonates, polyetheretherketones, polymethylpentenes, polyimides (including polyetherimide), polyolefins, polysulfones (including polyethersulfone and polyphenylsulfone), and polyvinylidene fluorides.
Work was conducted that could lead to a high energy density electrochemical capacitor, completely free of liquid electrolyte. A three-dimensional RuO sub x-ionomer composite structure has been successfully formed and appears to provide an ionomer ionic linkage throughout the composite structure. Capacitance values of approximately 0.6 F/sq cm were obtained compared with 1 F/sq cm when a liquid electrolyte is used with the same configuration.
A modification of the offset-compensated switched-capacitor integrator is described. The resulting circuit has a reduced delay and low gain distortion. It also retains the simplicity and low phase errors of earlier schemes.
Dc-to-dc power converter multiplies input supply potential by factor of nearly 40. Design does not make use of transformers or inductors but effects voltage boost-up by capacitive energy transfer. Circuit primarily made up of banks of capacitors, connected by network of integrated-circuit relays. Converter functionally linear voltage amplifier with fixed gain figure. Bipolar in operation. Output fully floating, and excellent dc isolation between input and output terminals.
By neglecting losses and other nonidealities, the authors were able to derive a simple single-loop equivalent circuit for each mode of operation of the series resonant converter. From these equivalent circuits, a good approximation of the current and voltages within the converter was obtained, despite the simplified approach taken. It is pointed out that designers of capacitor charging power supplies can utilize this approach in deciding what type of control strategy is needed to obtain a desired characteristic. Once the basic topology of the power supply has been determined, a detailed simulation could be implemented using one of the general-purpose software packages available.
Dielectric films made from blends of some commercially available high-dielectric-constant cyanoresins with each other and with cellulose triacetate (CTA) have both high dielectric constants and high breakdown strengths. Dielectric constants as high as 16.2. Films used to produce high-energy-density capacitors.
This paper analyzes the use of IIR switched capacitor filters to implement the discrete wavelet transform and the inverse transform, using quadrature mirror filters (QMF) which have the necessary symmetry for reconstruction of the data. This is done by examining the sensitivity of the QMF transforms to the manufacturing variance in the desired capacitances. The performance is evaluated at the outputs of the separate filter stages and the error in the reconstruction of the inverse transform is compared with the desired results.
Advantages include rapid response, solar blindness, and relative invulnerability to ionizing radiation. Ferroelectric capacitor made to function as photovoltaic detector of ultraviolet photons by making one of its electrodes semitransparent. Photovoltaic effect exploited more fully by making Schottky barrier at illuminated semitransparent-electrode/ferroelectric interface taller than Schottky barrier at other electrode/ferroelectric interface.