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At least 505 records · Page 28

Improved adhesion of sputtered refractory carbides to metal substrates

Sputtered coatings of the refractory metal carbides are of great interest for applications where hard wear-resistant materials are desired. The usefulness of sputtered refractory carbides is often limited in practice by spalling or interfacial separation. In this work improvements in the adherence of refractory carbides on iron, nickel and titanium base alloys were obtained by using oxidation, reactive sputtering or sputtered interlayers to alter the coating-substrate interfacial region. X-ray photoelectron spectroscopy and argon ion etching were used to characterize the interfacial regions, and an attempt was made to correlate adherence as measured in wear tests with the chemical nature of the interface.

Wheeler, D. R.↗

IC Capacitors on Groups III-to-V Substrates

Oxides applied by a "spin-on" process have been used to fabricate capacitors on gallium arsenide and indium phosphide substrates: they might also be used with other compounds of elements in groups III to V of the periodic table. The III-to-V materials are attractive for integrated circuits because they offer responses potentially six times faster than silicon.

Alcorn, G. E.↗

Effects of varying oxygen partial pressure on molten silicon-ceramic substrate interactions

The silicon sessile drop contact angle was measured on hot pressed silicon nitride, silicon nitride coated on hot pressed silicon nitride, silicon carbon coated on graphite, and on Sialon to determine the degree to which silicon wets these substances. The post-sessile drop experiment samples were sectioned and photomicrographs were taken of the silicon-substrate interface to observe the degree of surface dissolution and degradation. Of these materials, silicon did not form a true sessile drop on the SiC on graphite due to infiltration of the silicon through the SiC coating, nor on the Sialon due to the formation of a more-or-less rigid coating on the liquid silicon. The most wetting was obtained on the coated Si3N4 with a value of 42 deg. The oxygen concentrations in a silicon ribbon furnace and in a sessile drop furnace were measured using the protable thoria-yttria solid solution electrolyte oxygen sensor. Oxygen partial pressures of 10 to the minus 7 power atm and 10 to the minus 8 power atm were obtained at the two facilities. These measurements are believed to represent nonequilibrium conditions.

Ownby, D. P.↗

The establishment of a production-ready manufacturing process utilizing thin silicon substrates for solar cells

Three inch diameter Czochralski silicon substrates sliced directly to 5 mil, 8 mil, and 27 mil thicknesses with wire saw techniques were procured. Processing sequences incorporating either diffusion or ion implantation technologies were employed to produce n+p or n+pp+ solar cell structures. These cells were evaluated for performance, ease of fabrication, and cost effectiveness. It was determined that the use of 7 mil or even 4 mil wafers would provide near term cost reductions for solar cell manufacturers.

Pryor, R. A.↗

Method for applying photographic resists to otherwise incompatible substrates

A method for applying photographic resists to otherwise incompatible substrates, such as a baking enamel paint surface, is described wherein the uncured enamel paint surface is coated with a non-curing lacquer which is, in turn, coated with a partially cured lacquer. The non-curing lacquer adheres to the enamel and a photo resist material satisfactorily adheres to the partially cured lacquer. Once normal photo etching techniques are employed the lacquer coats can be easily removed from the enamel leaving the photo etched image. In the case of edge lighted instrument panels, a coat of uncured enamel is placed over the cured enamel followed by the lacquer coats and the photo resists which is exposed and developed. Once the etched uncured enamel is cured, the lacquer coats are removed leaving an etched panel.

Fuhr, W.↗

LPE growth of 1.3 micron InGaAsP CW lasers on /110/ InP substrates

A description is presented of the liquid-phase epitaxial (LPE) growth of high-quality InGaAsP/InP continuous-wave (CW) laser structures on (110) InP substrates using conventional LPE without the need for special growth procedures. Double heterojunction laser structures were grown using the LPE supercooling method with a horizontal sliding boat. Low broad-area current densities (970 A/sq cm) and CW operation achieved at room temperature indicate that results comparable to up-to-date devices may be achieved. The inherent tendency for surface planarity maintenance due to the perfect surface stoichiometry of the (110) surface is a feature that may lend itself to the generation of improved interface growth in quaternary III-V and related semiconductor alloy systems. The similar cross-sectional appearance of structures grown on (110) and (100) orientations show that conventional LPE can be used with (110) surface planes without introducing special growth procedures.

Hawrylo, F. Z.↗

InGaAsP CW Lasers on (110) InP Substrates

Quality InGaAsP/InP CW laser structures grown by conventional liquidphase epitaxy on (110) InP substrates without using special growth procedures. Improved surface quality and grown-layer morphology are attributable to nearlyperfect surface stoichiometry of (110) surface which makes available equal numbers of In and P deposition sites.

Hawrylo, F. Z.↗

Metal honeycomb to porous wireform substrate diffusion bond evaluation

Two nondestructive techniques were used to evaluate diffusion bond quality between a metal foil honeycomb and porous wireform substrate. The two techniques, cryographics and acousto-ultrasonics, are complementary in revealing variations of bond integrity and quality in shroud segments from an experimental aircraft turbine engine.

Vary, A.↗

Microbial ecology of extreme environments: Antarctic dry valley yeasts and growth in substrate limited habitats

The multiple stresses temperature, moisture, and for chemoheterotrophs, sources of carbon and energy of the Dry Valley Antarctica soils allow at best depauperate communities, low in species diversity and population density. The nature of community structure, the operation of biogeochemical cycles, the evolution and mechanisms of adaptation to this habitat are of interest in informing speculations upon life on other planets as well as in modeling the limits of gene life. Yeasts of the Cryptococcus vishniacil complex (Basidiobiastomycetes) are investigated, as the only known indigenes of the most hostile, lichen free, parts of the Dry Valleys. Methods were developed for isolating these yeasts (methods which do not exclude the recovery of other microbiota). The definition of the complex was refined and the importance of nitrogen sources was established as well as substrate competition in fitness to the Dry Valley habitats.

Vishniac, H. S.↗

Method of repairing surface damage to porous refractory substrates

A damaged porous refractory material coated with a glass coating is repaired by applying hydrolyzed tetraethyl orthosilicate to the damaged area and curing it. A pliable filler comprised of hydrolyzed tetraethyl orthosilicate and powdered refractory substrate is then applied to the area which is then heated.

Ecord, G. M.↗

Growth and characterization of Czochralski-grown n and p-type GaAs for space solar cell substrates

Progress in LEC (liquid encapsulated Czochralski) crystal growth techniques for producing high-quality, 3-inch-diameter, n- and p-type GaAs crystals suitable for solar cell applications is described. The LEC crystals with low dislocation densities and background impurities, high electrical mobilities, good dopant uniformity, and long diffusion lengths were reproducibly grown through control of the material synthesis, growth and doping conditions. The capability for producing these large-area, high-quality substrates should positively impact the manufacturability of highly efficiency, low cost, radiation-hard GaAs solar cells.

Chen, R. T.↗

Modeling of photodegradation in solar cell modules of substrate and superstrate design made with ethylene-vinyl acetate as pottant material

The rates of hydrogen abstraction by peroxy radicals were proven to be too slow for significant oxidation of the alkane substrate to be important. The numerical procedure, independent of our particular data base was verified by reproducing concentration time profiles for a model reaction set describing the cesium flare system in the upper atmosphere. Simulation was identical to that given in the literature. Experimental verification of the data base is to be attempted by weatherometry studies in the coming year. Work on the new diagnostic techniques was completed. The adapted automated viscometer was demonstrated to be an efficient and reliable tool for routine measurements of viscosity (molecular weight) changes in solid samples after batch solutions have been made up. The laser photolysis GC method for monitoring extremely low levels of oxidation in polymers proved to be impractical because the yields of carbon monoxide were too low for quantification. Much progress was made with the computer model. The reaction matrix was completely revised, resulting in a new scheme of 31 reactions and time, lifetimes in excess of ten years. The results to date lead us to some tentative observations.

Somersall, A. C.↗

Reactions and diffusion between an Al film and a Ti substrate

The reaction between a 0.5 to 1.0 micron Al film and a thick Ti substrate to form TiAl3 occurs very rapidly on heating to 635 C and causes the Al to be confined to the surface region. After heating to 900 C, Ti3Al is formed with little release of Al into alpha-Ti. Further annealing at 900 C eventually causes the Ti3Al phase to decompose and a substantial amount of Al is released into alpha-Ti. The interdiffusion coefficient for Al in alpha-Ti at 900 C was found to increase by less than one order of magnitude as Al is varied from 0 to 20 at. pct. These data were obtained from the (101) X-ray diffraction intensity band using polycrystalline samples. Improvements in the analysis of X-ray diffraction data for the determination of composition profiles are discussed.

Rao, V. B.↗

Metal honeycomb to porous wireform substrate diffusion bond evaluation

Two nondestructive techniques were used to evaluate diffusion bond quality between a metal fail honeycomb and porous wireform substrate. The two techniques, cryographics and acousto-ultrasonics, are complementary in revealing variations of bond integrity and quality in shroud segments from an experimental aircraft turbine engine. Previously announced in STAR as N82-18612

Vary, A.↗

Hot-Dipped Metal Films as Epitaxial Substrates

Multistep process forms semiconductor devices on macrocrystalline films of cadmium or zinc. Solar-cell fabrication processes use hot-dipped macrocrystalline films on low-cost sheet-metal base as substrates for epitaxy. Epitaxial layers formed by variety of methods of alternative sequence paths. Solar cells made economically by forming desired surface substance directly on metal film by chemical reactions.

Shlichta, P. J.↗

Preparing InSb Substrates

Molecular-beam epitaxial substrates passivated by chloride film growth. Chloride layer produced by direct chlorination, by chloride radicals in solutions, or by formation of preliminary oxide layer followed by chloride substitution.

Vasquez, R. P.↗

Solar-Array Substrate From Glass-Reinforced Concrete

Design elminiates glass superstrate and associated metal framing. Panel has two trapezoidal stiffening ribs for structural support. Strategic placement of ribs with embedded support tubes (standard PVC tubing) minimizes bending moments and resulting stresses produced by installation and windloads. Glass-reinforced concrete panel has smooth flat surface suitable for solar substrate and includes structural bracing for rigidity and design adaptable to mass production.

Eirls, J. L.↗