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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

DC Modeling of 4H-SiC nJFET Gate Length Reduction at 500°C

The development of robust, high-performance integrated circuits (ICs) will enable numerous potential NASA missions of current interest, including long-duration robotic missions exploring the 460°C surface of Venus. Currently, NASA is looking towards SiC-based devices to provide such a solution. However, the current NASA silicon carbide (SiC) JFET device with a channel length of 6 μm (recently fabricated Gen. 11 ICs) limits mission-relevant circuit capabilities. In this study, we combined experiments with simulations to explore two straightforward fabrication strategies (shallow n− and deep n+) to reduce the SiC JFET channel length while maintaining turn-off behavior needed to realize 500 °C circuit operation. First, the material properties for 4H-SiC were implemented in COMSOL and the Poisson equation was solved for twelve 2D device designs. Then, based on the insights gained from the distribution of the electron concentration, electrostatic potential, and electric field for twelve designs (with three fabrication strategies), simulation for a 1 μm gate length nJFET with the turn-off performance comparable to the state-of-the-art.

4H-SiC nJFET↗
NASA NTRS2021

Near-infrared Reflectance of Rocks at high Temperature: Preliminary Results and Implications for Near-infrared Emissivity of Venus's Surface

Light emitted from Venus’s surface can be viewed through spectral “windows” in its atmosphere, in the nearinfrared (NIR) around 1000 nanometer (nm) wavelengths. The NIR emissivity of Venus’s surface can constrain rock types and their weathering state; emissivities can be measured directly or calculated from reflectances. We measured the reflectances of igneous and sedimentary rocks at Venus’s surface temperature, 400 °C–500 °C at 850 and 950 nm; samples were heated in a box furnace in air, illuminated by light-emitting diodes (LEDs), and imaged with a modified charge-coupled device (CCD) camera. Reflectances were also measured at 25 °C from 350 to 1400 nm. Rock reflectances at 850 and 950 nm and 400 °C–500 °C are nearly identical to those at 25 °C, except for the effects of nanophase hematite forming on some surfaces. Fresh basalts have reflectances (high and low temperatures) near 7.5%; a leucogranite similarly has reflectances near 50%. Pigmentary hematite has nearly identical reflectances at high- and low-temperature at these wavelengths. Pigmentary hematite appears dark brown 400 °C–500 °C because its absorption edge has shifted to beyond the limit of human vision. These rock reflectances imply that basalts should have emissivities near 0.9, and granite (and similar felsic rocks) should have lower emissivities ∼0.5. Thus, basalt and felsic rock should be easily distinguished in NIR emissivity measurements of Venus’s surface, such as are baselined in recent Venus mission proposals. Other sedimentary rocks should have even lower emissivities: quartz sand at around ∼0.3, and anhydrite as low as 0.1.

Allan H Treiman↗
NASA NTRSDate not supplied

Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs

This paper presents results from metal contact processing experiments towards the implementationof durable 500 deg.C high-frequency 4H-SiC bipolar junction transistors (BJTs). Specifically, p-type ohmic contacts have been demonstrated on a 0.25 μm-thick p-type homoepitaxial layer of doping 8 x 1018± 4 x 1018cm-3. Finally, preliminary current-voltage characteristics of fabricated BJTs are presented.

RF SiC↗
NASA NTRS2018

Room Temperature Total-Ionizing Dose Testing of Glenn Research Center (GRC) 500 °C Durable 4H-SiC JFET IC Technology

The purpose of this testing was to obtain total ionizing dose (TID) information about custom-built research prototype silicon carbide (SiC) junction field effect transistor (JFET) integrated circuits (ICs) capable of prolonged operation in extremely high-temperature (500 degrees Centigrade) environments. The circuits included ring oscillators and operational amplifiers as well as individual n-channel JFETs. This technology is being considered for use in high temperature, high pressure applications such as Long-Lives Surface System Explorer (LLISSE). These devices were developed at NASA Glenn Research Center (GRC). Testing occurred from July 9th-July 13th, 2018.

Radiation↗
NASA NTRS2008

6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500 C

The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits (ICs) for use in the hot sections of aircraft engines and for Venus exploration where ambient temperatures are well above the approximately 300 degrees Centigrade effective limit of silicon-on-insulator IC technology. In order for beneficial technology insertion to occur, such transistor ICs must be capable of prolonged operation in such harsh environments. This paper reports on the fabrication and long-term 500 degrees Centigrade operation of 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). Simple analog amplifier and digital logic gate ICs have now demonstrated thousands of hours of continuous 500 degrees Centigrade operation in oxidizing air atmosphere with minimal changes in relevant electrical parameters. Electrical characterization and modeling of transistors and circuits at temperatures from 24 degrees Centigrade to 500 degrees Centigrade is also described. Desired analog and digital IC functionality spanning this temperature range was demonstrated without changing the input signals or power supply voltages.

Neudeck, Philip G.↗
NASA NTRS2012

High-Precision Temperature Control of a Crystal Growth Furnace at 1,500 C

For crystal growth of semiconductor materials a short-term temperature stability of 0.1 C at 1500 C is one of the essential parameters to be addressed for achieving high-quality crystals. Hence, for temperature monitoring and control with high precision in a floating zone furnace two sets of thermo-sensors, type B thermocouples and optical fibre thermometers, have been implemented and successfully operated in the furnace for more than 2000 h. The optical fibre thermometers consist of an optical system made of sapphire (two fibres plus a prism in between for deflection) and transmit the infra-red radiation of the heater to the outside of the hot core of the furnace for pyrometric temperature measurement. A dedicated control algorithm has been set up which controlled the power settings to the individual heaters. Both sensor types showed no degradation after this period and yielded a short-term stability at 1200 C of 0.05 C (optical fibre thermometers), respectively 0.08 C (thermocouples).

Stenzel, Ch.↗
NASA NTRS2015

High Temperature Pt/Alumina Co-Fired System for 500 C Electronic Packaging Applications

Gold thick-film metallization and 96 alumina substrate based prototype packaging system developed for 500C SiC electronics and sensors is briefly reviewed, the needs of improvement are discussed. A high temperature co-fired alumina material system based packaging system composed of 32-pin chip-level package and printed circuit board is discussed for packaging 500C SiC electronics and sensors.

High temperature↗
NASA NTRS2015

Packaging Technologies for 500 C SiC Electronics and Sensors: Challenges in Material Science and Technology

This paper presents ceramic substrates and thick-film metallization based packaging technologies in development for 500C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550C. The 96 alumina packaging system composed of chip-level packages and PCBs has been successfully tested with high temperature SiC discrete transistor devices at 500C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC junction field-effect-transistor (JFET) with a packaging system composed of a 96 alumina chip-level package and an alumina printed circuit board was tested on low earth orbit for eighteen months via a NASA International Space Station experiment. In addition to packaging systems for electronics, a spark-plug type sensor package based on this high temperature interconnection system for high temperature SiC capacitive pressure sensors was also developed and tested. In order to further significantly improve the performance of packaging system for higher packaging density, higher operation frequency, power rating, and even higher temperatures, some fundamental material challenges must be addressed. This presentation will discuss previous development and some of the challenges in material science (technology) to improve high temperature dielectrics for packaging applications.

dielectric properties↗
NASA NTRS2016

500 C Electronic Packaging and Dielectric Materials for High Temperature Applications

High-temperature environment operable sensors and electronics are required for exploring the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high temperature electronics, and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by these high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed. High-temperature environment operable sensors and electronics are required for probing the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and eventual applications of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high electronics and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed.

dielectric performance↗
NASA NTRS2025

Design and Simulation of Greatly Improved Future Generation 4H-SiC JFET-R Integrated Circuits for Prolonged 500 °C Operation

This work compares design layouts and circuit simulations of the next two prototype NASA Glenn SiC JFET-R IC fabrication runs designated “IC Gen. 12” and “IC Gen. 13”. Even though both generations employ the same physical JFET gate length and chip size, SPICE simulations predict drastic improvements to IC capabilities and performance metrics for Gen. 13 over Gen. 12. The main factors behind simulated performance differences are thinner n-channel layer leading to reduced operating voltages and switch to stepper-based photolithography that enables roughly 4-fold layout area reductions for functionally identical circuit blocks.

Silicon Carbide↗
NASA NTRS1982

Investigation of the hydrochlorination of SiCl4

The hyrochlorination of SiC14 and m.g. silicon metal to produce SiHC13, was investigated. Reaction kinetic measurements were carried out to collect additional rate data at 525 C and 550 C. A theoretical study was carried out to provide a kinetic model and a rate equation for the hydrochlorination reaction. Results of this preliminary study show that the rate of formation of SiHC13 follows a pseudo first order kinetics. The rate constants were measured at three temperatures, 550 C, 500 C and 450 C, respectively. The activation energy was determined from the Arrhenius plot to give a value of 13.2 Kcal/mole. The design of a quartz reactor to measure reaction rates and equilibrium conversion of SiHC13 at reaction temperature up to 650 C was completed.

Mui, J. Y. P.↗
NASA NTRS1986

Release of noble gases and nitrogen from grain-surface sites in lunar ilmenite by closed-system oxidation

Noble gases and nitrogen were extracted from a 100 to 150 microns ilmenite separate from lunar soil 71501 by closed system stepped heating in approx. 10 torr O2 at 300 C, 400 C, 500 C, 600 C and 630 C, followed by stepped pyrolysis at ten temperatures between 680 C and approx. 1500 C. The five oxidation steps together liberated approx. 65% of the total He-4, 45% of the Ne-20, 23% of the N-14 and Ar-36, 12% of the Kr-84 and 8% of the Xe-132 in the sample; Ne-20/Ar-36 and Ne-20/Ne-22 ratios agree with the solar wind composition experiment, and Kr-84/Ar-36 and Xe-132/Ar-36 are within approx. 10% of Cameron's estimates for the sun and solar wind. The remaining gases, released above 630 C by pyrolysis, are strongly fractionated with respect to the SWC-Cameron solar wind elemental composition. Large concentrations of fractionated noble gases in grain interiors, their virtual absence in the relatively unfractionated surface gas reservoir, and the high N/noble gas ratio all imply that most of the solar wind noble gases initially implanted in grain surfaces are eventually lost by diffusion. Loss limits can be estimated by considering two given scenarios. It is concluded tat approx. 70 to 97% or more of the Ar implanted in 71501 ilmenite grains has diffusively escaped.

Frick, U.↗
NASA NTRSDate not supplied

Organic Carbon Concentrations in 3-Billion-Year-Old Lacustrine Mudstones of Mars

Understanding the inventory of carbon on Mars is relevant to the question of whether Mars was ever habitable. While the Mars atmosphere represents a large reservoir of carbon, in situ pyrolysis performed on Mars and meteorite analyses indicate that another significant reservoir of carbon is the rocks themselves. Complex organic carbon was discovered in 3.5 Ga mudstones sampled at Cumberland (CB) in the Yellowknife Bay Formation in Gale Crater by the Sample Analysis at Mars (SAM) instrument suite on the Mars Science Laboratory (MSL) using a thermal decomposition technique called evolved gas analysis (EGA). Other simple organics have also been detected in these same CB materials. Low temperature co-evolution of CO and CO2 (~200°C – 500°C) has been detected in many samples from Gale Crater where SAM EGA has been performed, and potential sources include combustion of terrestrial organics from SAM, as well as combustion and/or decarboxylation of either indigenous martian or exogenous organic carbon.

J. C. Stern↗
NASA NTRS1976

The effect of thermal exposure on the mechanical properties of aluminum-graphite composites

To promote the development of aluminum-graphite composites with improved properties for aerospace applications, composite samples were fabricated by solid-state diffusion bonding of liquid-phase Al-infiltrated Thornel 50 fibers, and their mechanical properties were measured at room temperature in the as-received condition, after temperature exposure and after thermal cycling. The interface structure in aluminum-graphite composites and its effect on the composite properties, the effect of thermal cycling on the tensile properties of the composites, and the characteristics of failures of the composites in tension is discussed. The studied composites exhibited tensile properties corresponding well with those predicted by the rule of mixtures. Thermal cycling between 20 C and 500 C, as well as the formation of the Al4C3 at the Al-graphite interfaces at temperatures above 500 C resulted in degradation of the composite strength. Scanning electron microscopy of fractured surfaces indicated that the relatively weak interface governs the mode of failure in tension.

Khan, I. H.↗
NASA NTRS2016

First-Order SPICE Modeling of Extreme-Temperature 4H-SiC JFET Integrated Circuits

A separate submission to this conference reports that 4H-SiC Junction Field Effect Transistor (JFET) digital and analog Integrated Circuits (ICs) with two levels of metal interconnect have reproducibly demonstrated electrical operation at 500 C in excess of 1000 hours. While this progress expands the complexity and durability envelope of high temperature ICs, one important area for further technology maturation is the development of reasonably accurate and accessible computer-aided modeling and simulation tools for circuit design of these ICs. Towards this end, we report on development and verification of 25 C to 500 C SPICE simulation models of first order accuracy for this extreme-temperature durable 4H-SiC JFET IC technology. For maximum availability, the JFET IC modeling is implemented using the baseline-version SPICE NMOS LEVEL 1 model that is common to other variations of SPICE software and importantly includes the body-bias effect. The first-order accuracy of these device models is verified by direct comparison with measured experimental device characteristics.

JFET↗
NASA NTRS1982

Surface chemistry, microstructure and friction properties of some ferrous-base metallic glasses at temperatures to 750 C

X-ray photoelectron spectroscopy analysis, transmission electron microscopy, diffraction studies, and sliding friction experiments were conducted with ferrous-base metallic glasses in sliding contact with aluminum oxide at temperatures from room to 750 C in a vacuum of 30 nPa. The results indicate that there is a significant temperature influence on the friction properties, surface chemistry, and microstructure of metallic glasses. The relative concentrations of the various constituents at the surface of the sputtered specimens were very different from the normal bulk compositions. Contaminants can come from the bulk of the material to the surface upon heating and impart boric oxide and silicon oxide at 350 C and boron nitride above 500 C. The coefficient of friction increased with increasing temperature to 350 C. Above 500 C the coefficient of friction decreased rapidly. The segregation of contaminants may be responsible for the friction behavior.

Miyoshi, K.↗