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At least 55 records · Page 3

Lithium - An impurity of interest in radiation effects of silicon.

Study of the introduction and annealing of defects produced in lithium-diffused float-zone n-type silicon by 30-MeV electrons and fission neutrons. The introduction rate of recombination centers produced by electron irradiation is dependent on lithium concentration and for neutron irradiation is independent of lithium concentration. The introduction rate of Si-B1 centers also depends on the lithium concentration. The annealing of electron- and neutron-produced recombination centers, Si-B1 centers, and Si-G7 centers in lithium-diffused silicon occurs at much lower temperatures than in nondiffused material.

Naber, J. A.↗

Research, Development and Fabrication of Lithium Solar Cells

This report continues studies on cells made with low temperature (<400degC) single-cycle, lithium diffusion schedules. Measurements of concentration of lithium at the back surface showed that C(sub S) changes with time consisting of a build-up to a maximum value (above 10(exp 17) cm(exp -3)) with gradual decrease at longer diffusion times. Using the estimated C(sub S) values, theoretical lithium profiles were calculated. The calculated concentration near the PN junction was higher than those measured by the capacitance voltage (C-V) technique. The calculated concentration gradients were one-seventh of those measured by C-V methods. Both the concentration and its gradient were proportional to C(sub S). Estimates of C(sub S) obtained by extrapolating from C-V measured values of concentration and gradient near the PN junction, showed a decrease in C(sub S) for longer diffusion times. This fact supported the trend observed in Shipment C-13, where,, at longer times, the spread in values of V(sub oc), lithium concentration, and gradient became greater. The general conclusion was that the I-V characteristics were well controlled, with good cell output, but for longer diffusion times the lithium concentration gradient could have wider spread. The work described has led to greater insight into the lithium distribution dependence on the surface conditions. The surface conditions could be changed by varying the method used to apply lithium. Vacuum evaporation of lithium shows promise, and another exhaustive test of this method is in progress. Shipment C-13 is summarized, and the succeeding lots (C-14, C-15) are described. It is felt that improved monitoring of cell properties is at hand, and that the control of cell fabrication processes has advanced to where the effects of subtle differences in lithium distribution can now be seen. Evaluation is continuing on the best method to scale up the fabrication steps. A different sequence of fabrication is planned for Shipments C-14 and C-15.

Iles, Peter A.↗

Si(Li) position sensitive detector

A position sensitive detector was made using the lithium diffused layer of a lithium-drifted-silicon detector as the uniform resistive layer. An expression is derived for estimating the resistance from the thickness of the lithium layer. Expressions for the noise and ballistic deficit for single differentiation-double integration pulse shaping are presented. Room temperature data for a 1 Mev proton beam on a 45 mm long detector shows that the linearity is better than .05% and that the position resolution is 1.06 + or - .05 mm.

Gigante, J. R.↗

Research, Development and Fabrication of Lithium Solar Cells, Part 2

The development and fabrication of lithium solar cells are discussed. Several single-step, lithium diffusion schedules using lower temperatures and times are described. A comparison was made using evaporated lithium metal as the lithium source, and greatly improved consistency in lithium concentrations was obtained. It was possible to combine all processing steps to obtain lithium doped cells of high output which also contained adequate lithium to ensure good recoverability.

Iles, P. A.↗

Density and fluence dependence of lithium cell damage and recovery characteristics

Experimental results on lithium-containing solar cells point toward the lithium donor density gradient dN sub L/dw as being the crucial parameter in the prediction of cell behavior after irradiation by electrons. Recovery measurements on a large number of oxygen-rich and oxygen-lean lithium cells have confirmed that cell recovery speed is directly proportional to the value of the lithium gradient for electron fluences. Gradient measurements have also been correlated with lithium diffusion schedules. Results have shown that long diffusion times (25 h) with a paint-on source result in large cell-to-cell variations in gradient, probably due to a loss of the lithium source with time.

Faith, T. J.↗

Radiation damage and annealing of lithium-doped silicon solar cells

Evidence has been presented that a lithium-diffused crucible-grown silicon solar cell can be made with better efficiency than the flight-quality n p 10 ohms-cm solar cell. When this lithium cell is exposed to a continuous radiation evironment at 60 C (electron spectrum from gamma rays) it has a higher power output than the N/P cell after a fluence equivalent to 1 MeV. A comparison of annealing of proton- and electron-damage in this lithium cell reveals a decidedly faster rate of recovery and higher level of recoverable power from the proton effects. Therefore, the lithium cell shows a good potential for many space missions where the proton flux is a significant fraction of the radiation field to be encountered.

Statler, R. L.↗

Results of a real-time irradiation of lithium P/N and conventional N/P silicon solar cells.

Eight types of lithium-diffused P/N and three types of conventional 10 ohm-cm N/P silicon solar cells were irradiated at four different temperatures with a strontium-90 radioisotope at a rate typical of that expected in earth orbit. The six-month irradiation confirmed earlier accelerator results, showed that certain cell types outperform others at the various temperatures, and, in general, verified the recent improvements and potential usefulness of lithium solar cells. The experimental approach and statistical methods and analyses employed yielded increased confidence in the validity of the results. Injection level effects were observed to be significant.

Reynard, D. L.↗

Engineering experimental program on the effects of near-space radiation on lithium doped solar cells

The results of an experimental evaluation of the real-time degradation characteristics of lithium-diffused silicon solar cells are reported. A strontium-90 radioisotope was used for simulation of a typical earth-orbital electron environment. The experiment was performed in an ion pump vacuum chamber with samples maintained at -50, +20, +50, and +80 C. Samples were illuminated during the 6-month exposure run with solar cell 1-5 characteristics measured periodically in situ. This 6-month exposure corresponded to a 1 MeV equivalent fluence of approximately 10 to the 14th power electrons/sq cm. Several types of lithium cells were irradiatied and compared directly with conventional N/P cells. The best lithium cells compared favorably with N/P cells, particularly at the higher test temperatures. With a slight improvement of initial performance characteristics, lithium cells appear feasible for 5 to 10 year missions at synchronous altitude. Based on the reported results and those of other irradiation experiments, lithium cells would appear to be superior to N/P cells in proton-dominated earth-orbital environments. Another important conclusion of the effort was that illuminated/loaded cells degrade more rapidly than do dark/unloaded cells. The irradiation experiment provided data of high quality with a high degree of confidence because of the experimental and statistical analysis techniques utilized.

Source record↗

Process controls introduction of selected impurities into semiconductor wafers

Modified three-step process controls the concentration of lithium diffused as a dopant into the base region of a diffused n-on-p silicon solar cell wafer. Part of the surface layer of the base region of the p-type silicon containing the diffused dopant is removed, prior to redistributing the remaining portion of the dopant into the bulk of the wafer.

Bartholomay, W. C.↗