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NASA NTRS1984

Mechanical contact induced transformation from the amorphous to the crystalline state in metallic glass

Friction and wear tests were conducted with 3.2- and 6.4-millimeter-diameter aluminum oxide spheres sliding, in reciprocating motion, on a Fe67Co18B14Si1 metallic foil. Crystallites with a size range of 10 to 150 nanometers were produced on the wear surface of the amorphous alloy. A strong interaction between transition metals and metalloids such as silicon and boron results in strong segregation during repeated sliding, provides preferential transition metal-metalloid clustering in the amorphous alloy, and subsequently produces the diffused honeycomb structure formed by dark grey bands and primary crystals, that is, alpha-Fe in the matrix. Large plastic flow occurs on an amorphous alloy surface with sliding and the flow film of the alloy transfers to the aluminum oxide pin surface. Multiple slip bands due to shear deformation are observed on the side of the wear track. Two distinct types of wear debris were observed as a result of sliding: an alloy wear debris, and/or powdery-whiskery oxide debris.

Miyoshi, K.↗

NASA NTRS1984

Mechanical-contact-induced transformation from the amorphous to the partially crystalline state in metallic glass

Miyoshi, K.↗

NASA NTRS1984

Mechanical-contact-induced transformation from the amorphous to the partially crystalline state in metallic glass

Miyoshi, K.↗

NASA NTRS1991

Subsurface Growth of CoSi2 by Deposition of Co on Si-Capped CoSi2 Seed Regions

At a growth temperature of 800 C, Co deposited on Si(111) diffuses through a Si cap and exhibits oriented growth on buried CoSi2 grains, a process referred to as endotaxy. This occurs preferentially to surface nucleation of CoSi2 provided the thickness of the Si cap is less than a critical value between 100 and 200 nm for a deposition rate of 0.01 nm/s. Steady-state endotaxy is modeled under the assumption that the process is controlled by Co diffusion.

Fathauer, R. W.↗

NASA NTRS1988

Micromachining Of Silicon

Etching rates of alloys and heavily-doped semiconductor materials significantly higher than lightly doped semiconductor if proper etching system used. Selectivity used to etch regions of semiconductor preferentially while not etching other unmasked regions. When selective etching used with laser-induced-diffusion techniques, possible to make structures that cannot be made at present. Possible to produce well-defined structures in and through wafer while not damaging existing structures on wafer.

Dickman, John E.↗

NASA NTRS2001

Effect of convection on osteoblastic cell growth and function in biodegradable polymer foam scaffolds

Culture of seeded osteoblastic cells in three-dimensional osteoconductive scaffolds in vitro is a promising approach to produce an osteoinductive material for repair of bone defects. However, culture of cells in scaffolds sufficiently large to bridge critical-sized defects is a challenge for tissue engineers. Diffusion may not be sufficient to supply nutrients into large scaffolds and consequently cells may grow preferentially at the periphery under static culture conditions. Three alternative culturing schemes that convect media were considered: a spinner flask, a rotary vessel, and a perfusion flow system. Poly(DL-lactic-co-glycolic acid) (PLGA) foam discs (12.7 mm diameter, 6.0 mm thick, 78.8% porous) were seeded with osteoblastic marrow stromal cells and cultured in the presence of dexamethasone and L-ascorbic acid for 7 and 14 days. Cell numbers per foam were found to be similar with all culturing schemes indicating that cell growth could not be enhanced by convection, but histological analysis indicated that the rotary vessel and flow system produced a more uniform distribution of cells throughout the foams. Alkaline phosphatase (ALP) activity per cell was higher with culture in the flow system and spinner flask after 7 days, while no differences in osteocalcin (OC) activity per cell were observed among culturing methods after 14 days in culture. Based on the higher ALP activity and better cell uniformity throughout the cultured foams, the flow system appears to be the superior culturing method, although equally important is the fact that in none of the tests did any of the alternative culturing techniques underperform the static controls. Thus, this study demonstrates that culturing techniques that utilize fluid flow, and in particular the flow perfusion system, improve the properties of the seeded cells over those maintained in static culture.

NASA Discipline Cell Biology↗

NASA NTRS2001

Ceramic with preferential oxygen reactive layer

An article comprises a silicon-containing substrate and an external environmental/thermal barrier coating. The external environmental/thermal barrier coating is permeable to diffusion of an environmental oxidant and the silicon-containing substrate is oxidizable by reaction with oxidant to form at least one gaseous product. The article comprises an intermediate layer/coating between the silicon-containing substrate and the environmental/thermal barrier coating that is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant. A method of forming an article, comprises forming a silicon-based substrate that is oxidizable by reaction with oxidant to at least one gaseous product and applying an intermediate layer/coating onto the substrate, wherein the intermediate layer/coating is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant.

Wang, Hongyu↗

NASA NTRS1992

Co diffusion and growth of buried single-crystal CoSi2 in Si(111) by endotaxy

At a growth temperature of 800 C, Co deposited on a Si capping layer exhibits oriented growth on buried CoSi2 grains on Si(111), a process referred to as endotaxy. This occurs preferentially to surface nucleation of CoSi2, provided the thickness of the Si cap is less than a critical value of about 100 nm for deposition rates of 0.003-0.01 nm/s. The steady-state process is modeled using known values of the Co diffusion coefficient and solid solubility in Si, allowing some conclusions to be drawn regarding parameters relevant to CoSi2 epitaxy. Using this technique, single-crystal continuous layers of CoSi2 can be formed under a high-quality Si capping layer.

Fathauer, R. W.↗

NASA NTRS1977

The effect of carbon on phosphate reduction

Several experiments were performed in order to evaluate the effect of carbon on phosphate reduction in synthetic systems. It was attempted to simulate in the experiments conditions occurring during lunar impact processes, but without shock pressure. Temperature, oxygen fugacity, and bulk chemistry were evaluated separately in order to determine the conditions which are suitable for carbon reduction. It appears on the basis of the results of the reported investigation that carbon can be an effective reducing agent during reheating events such as those encountered by lunar soils and breccias. Phosphate reduction may be viewed as a two-step process in which carbon is mobilized as CO during heating and preferentially dissolved in the metal phase. It then acts as a reducing agent on cooling. Gas phase transport and diffusion of carbon in metal are sufficiently rapid to allow uniform carbon distribution both within and between metal grains. The availability of metal from meteorites and carbon from the solar wind is probably sufficient to make reduction by carbon a significant process on the lunar surface.

Friel, J. J.↗

NASA NTRS2000

Rhenium-Oxygen Interactions at High Temperatures

The reaction of pure rhenium metal with dilute oxygen/argon mixtures was studied from 600 to 1400 C. Temperature, oxygen pressure, and flow rates were systematically varied to determine the rate-controlling steps. At lower temperatures the oxygen/rhenium chemical reaction is rate limiting; at higher temperatures gas-phase diffusion of oxygen through the static boundary layer is rate limiting. At all temperatures post-reaction microstructures indicate preferential attack along certain crystallographic planes and defects.

Jacobson, Nathan S.↗

NASA NTRS1980

Solar wind sputtering effects in the atmospheres of Mars and Venus

It is found through an investigation, combining Monte Carlo simulations and analytical techniques, of the direct collisional interaction of an energetic particle flux with the neutral components of a planetary atmosphere, that solar wind sputtering could provide an important exospheric mass sink on both Mars and Venus under appropriate conditions. The computed rates of helium loss in the Venusian atmosphere and of carbon, nitrogen and oxygen in the Martian atmosphere imply that sputtering would have a significant effect on the noble gas budget of Venus and dominate the chemical and photochemical loss processes of Mars. Because of diffusive separation of lighter elements and isotopes, and because the gravitational binding energy is proportional to the mass, the erosion process preferentially removes the lighter components of the atmosphere. Solar wind sputtering could therefore compete with other erosion mechanisms in generating substantial fractionation effects.

Watson, C. C.↗

NASA NTRS2003

Competing Classical and Quantum Effects in Shape Relaxation of a Metallic Nanostructure

We demonstrate for the first time that the quantum size effect (QSE) plays a competing role along side the classical thermodynamic effect in the shape relaxation of a small metallic island. Together, these effects transforms a lead(Pb) island grown on Si(111) substrate from its initially flattop faceted morphology to a peculiar ring-shape island, a process catalysed by the tip electric field of a scanning tunnelling microscope (STM). We shall show for the first time how QSE affects the relaxation process dynamically. In particular, it leads to a novel strip-flow growth and double-step growth on selective strips of a plateau inside the ring, defined by the substrate steps more than 60?0?3 below. It appears that atoms diffusing on the plateau can clearly (sub i)(deg)sense(sub i)+/- the quantized energy states inside the island and have preferentially attached to regions that further reduces the surface energy as a result of the QSE, limiting its own growth and stabilizing the ring shape. The mechanism proposed here offers a sound explanation for ring shape metal and semiconductor islands observed in other systems as well.

Chen, Dongmin↗

NASA NTRS1984

Bubble formation in oxide scales on SiC

The oxidation of alpha-SiC single crystals and sintered alphaand beta-SiC polycrystals has been investigated at elevated temperatures. Bubble formation is commonly observed in oxide scales on polycrystalline SiC, but is rarely found on single-crystal scales; bubbles result from the preferential oxidation of C inclusions, which are abundant in SiC polycrystals. The absence of bubbles on single crystals, in fact, implies that diffusion of the gaseous species formed on oxidation, CO (or possibly SiO), controls the rate of oxidation of SiC.

Mieskowski, D. M.↗

NASA NTRS1992

Growth parameters affecting the formation of buried CoSi2 by endotaxy of Co on Si(111)

At growth temperatures of roughly 800 C, Co deposited on Si (111 ) diffuses through a Si capping layer and exhibits oriented growth on buried CoSi2 seeds, a process referred to as endotaxy. This occurs preferentially to surface nucleation of CoSi2 under certain growth conditions. High-quality continuous single-crystal buried silicide layers have been obtained by endotaxy. This requires very low densities of attractive nucleation sites other than the buried seeds. For this reason, use of a silicon buffer layer and a low base pressure in the molecular-beam epitaxy system are found to be essential. Growth conditions required for high-quality layers and problems which result from growth outside these limits are discussed.

Fathauer, R. W.↗

NASA NTRS1993

Electrochemical characterization of p(+)n and n(+)p diffused InP structures

The relatively well documented and widely used electrolytes for characterization and processing of Si and GaAs-related materials and structures by electrochemical methods are of little or no use with InP because the electrolytes presently used either dissolve the surface preferentially at the defect areas or form residual oxides and introduce a large density of surface states. Using an electrolyte which was newly developed for anodic dissolution of InP, and was named the 'FAP' electrolyte, accurate characterization of InP related structures including nature and density of surface states, defect density, and net majority carrier concentration, all as functions of depth was performed. A step-by-step optimization of n(+)p and p(+)n InP structures made by thermal diffusion was done using the electrochemical techniques, and resulted in high performance homojunction InP structures.

Wilt, David M.↗

NASA NTRS2016

Preferential Heating of Oxygen 5+ Ions by Finite-Amplitude Oblique Alfven Waves

Minor ions in the fast solar wind are known to have higher temperatures and to flow faster than protons in the interplanetary space. In this study we combine previous research on parametric instability theory and 2.5D hybrid simulations to study the onset of preferential heating of Oxygen 5+ ions by large-scale finite-amplitude Alfven waves in the collisionless fast solar wind. We consider initially non-drifting isotropic multi-species plasma, consisting of isothermal massless fluid electrons, kinetic protons and kinetic Oxygen 5+ ions. The external energy source for the plasma heating and energization are oblique monochromatic Alfven-cyclotron waves. The waves have been created by rotating the direction of initial parallel pump, which is a solution of the multi-fluid plasma dispersion relation. We consider propagation angles theta less than or equal to 30 deg. The obliquely propagating Alfven pump waves lead to strong diffusion in the ion phase space, resulting in highly anisotropic heavy ion velocity distribution functions and proton beams. We discuss the application of the model to the problems of preferential heating of minor ions in the solar corona and the fast solar wind.

Maneva, Yana G.↗

NASA NTRS1984

Characteristics of the magnetospheric source of interplanetary energetic particles

The Earth's bow shock is frequently cited as an example of an astrophysical shock where particle acceleration is observed. However, because energetic particles observed upstream of the bow shock may be accelerated within the magnetosphere, it is important to understand the properties of the magnetospheric source. A first order picture of the spatial distribution of magnetospheric particles in the magnetosheath and upstream is obtained by mapping those magnetic field lines which drape over the magnetopause through the bow shock. Subsets of these field lines that connect to potential sites of magnetic merging on the magnetopause are also traced in the event that leakage occurs preferentially where normal components of the field are present across the boundary. The results can be used to determine whether the so-called diffuse particles observed upstream are accelerated locally or within the magnetosphere.

Luhmann, J. G.↗

NASA NTRS1984

A High-speed Characterization Technique for Solar Silicon

High-speed crystal growth techniques demand high-speed characterization techniques to allow a timely feed-back of information to the crystal growers. The unique properties of the Si electrolyte-contact (SEC) provide for an extremely fast and simple measurement of the light-induced photo-current for any piece of Si without lengthy preparation of the specimen. Electropolishing at high anodic current densities allows for insitu generation of fresh surfaces whereas preferential etching of defects in various modes is possible at low current densities. In n-type Si a simple estimation of the minority-carrier diffusion length is possible in many cases. Laser-scanning enables local probing of the photocurrent and provides data about the homogeneity of a sample. The experimental realization of the method is described in detail and examples are given and discussed.

Lehmann, V.↗