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This paper focuses on InP-based, HEMT Monolithic Millimeter-wave Integrated Circuit (MMIC) power amplifiers for applications to heterodyne receivers, transmitters, and commmunications circuits.
This paper presents some recently developed MMICs based on a 0.1 meu gate-length InAlAs/InGaAs/InP HEMT process with an fmax above 600 GHz.
We present results of developments of low noise millimeter wave receivers for space applications utilizing InP HEMT monolithic microwave integrated circuts (MMICs).
In this paper, we present two single stage MMIC amplifiers with the first demonstrating a measured S21 gain of 3-dB at 280-GHz and the second demonstrating 2.5-dB gain at 300- GHz, which is the threshold of the sub-millimeter wave regime. The high-frequency operation is enabled by a high-speed InP HEMT with a 35-nm gate. This is the first demonstrated S21 gain at sub-millimeter wave frequencies in a MMIC.
The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.
In this Letter, low-temperature (400 °C) chemical vapor deposition-grown boron nitride (BN) was investigated as the gate dielectric for AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on a Si substrate. Comprehensive characterizations using x-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, atomic force microscope, high-resolution transmission electron microscopy, and time-of-flight secondary ion mass spectrometry were conducted to analyze the deposited BN dielectric. Compared with conventional Schottky-gate HEMTs, the MISHEMTs exhibited significantly enhanced performance with 3 orders of magnitude lower reverse gate leakage current, a lower off-state current of 1 × 10−7 mA/mm, a higher on/off current ratio of 108, and lower on-resistance of 5.40 Ω mm. The frequency-dependent conductance measurement was performed to analyze the BN/HEMT interface, unveiling a low interface trap state density (Dit) on the order of 5 × 1011–6 × 1011 cm−2 eV−1. This work shows the effectiveness of low-temperature BN dielectrics and their potential for advancing GaN MISHEMTs toward high-performance power and RF electronics applications.
Multiple commutation paths exist for switching devices in a three-level active neutral point clamped (3L-ANPC) inverter operation based on the selected switching state and current direction. In addition, the capacitive coupling path of the nonswitching device is a key design aspect for enabling high voltage and high current operation of gallium nitride (GaN) switches in 3L-ANPC topology. A comprehensive study of the switching transient events of inner, outer, and clamping devices of 3L-ANPC is presented in this article. The commutation mechanisms for worst-case transient voltage overshoots (TVOs) are identified. A simplified equivalent circuit model is presented to determine the design criteria for the power layout structure's parasitic inductances. A power layout strategy satisfying the design criteria is then proposed using an insulated metal substrate power printed circuit board (PCB) to enable efficient high-power operation. The proposed design minimizes the commutation and capacitive coupling path inductances to 6 nH and 11.5 nH, respectively. This enables the fast switching operation of GaN HEMTs at 800 V dc, 36 A with a low TVO of 31% verified through experimental three-level double pulse test results. Experimental evaluation of a three-phase 3L-ANPC hardware prototype based on the proposed power layout shows 99% efficiency at 800 V, 9.5 kVA and 50 kHz switching frequency. The proposed design achieves a low case-to-ambient thermal resistance of 2.3 °C/W.
Recent advances in nuclear power generation technologies show great promise for efficient, safe generation of carbon-free power in the near future. Consequently, many new generation reactor designs are being pursued by government and industry groups, including both fission- and fusion-based technologies. Radiation- and temperature-tolerant sensor technology continues to advance, yet development of the electronics/instrumentation technologies suitable for these environments have fallen behind. Industry has adequately addressed harsh environment electronics needs for low earth orbit satellites, but the much more extreme conditions associated with electronics placed near or in a reactor core remain unaddressed. This project investigates the use of gallium nitride (GaN) circuit technology to address the unique needs for sensor interface electronics and communications in reactor environments. This report provides a summary of the first year’s project activities related to developing and optimizing devices and circuits for this GaN high electronic mobility transistor (HEMT) process. Activities reported include multiple analog and digital circuit designs simulated using custom Verilog-A models generated from measured GaN devices fabricated in the target process. Digital circuit designs included fundamental logic circuits such as an inverter, NAND, NOR, AND and OR gates, as well as a 5-stage ring oscillator. Each design was simulated using an open-source SPICE simulator, and an integrated circuit layout was produced of each design for use in future fabrication. Analog circuit designs focused on the fundamental building blocks to be used to construct sensor interface and communications circuits. These included current mirrors, matched differential pairs, and a Gilbert cell mixer design, each with an associated integrated circuit layout. Layout tools used for these designs included two open-source packages—KLayout and Magic—which were customized for specific use with the OSU GaN process layers. Design rules and preliminary device extraction capabilities were built for the Magic tool to enable device extraction and subsequent netlist generation for SPICE simulation. Finally, future research directions for year two are summarized. When the year-two directions are implemented, the project will be in position to advance the state of the art in electronics for near- or in-reactor sensor interfacing and communications.
Interdigitated photoconductive detectors with 5-micron geometry have been fabricated on HEMT material and their optical response characteristics at 820 nm have been examined at dc and in the frequency range of 2-8 GHz. These have been compared with characteristics of similar 1-micron devices on MESFET material. The shapes of the frequency responses were found to differ, but the useful bandwidth of both types of devices was found to be similar.
A W-band monolithic integrated oscillator circuit was designed and fabricated using submicron HEMT technology. The oscillation frequency was around 81 GHz and the power was -7 dBm at the chip level. This is the first report of an InAlAs/InGaAs monolithic oscillator operating at the W-band.
A new design of an active antenna with a dielectric resonator stabilized high electron mobility transistor (HEMT) oscillator (DRO) and an aperture-coupled patch antenna is reported. The circuit is fabricated using coplanar waveguide (CPW) with the oscillator and the antenna on opposite sides of the substrate. The active antenna was demonstrated at 7.6 GHz; however, the design can be scaled to higher frequencies. Excellent oscillator characteristics and radiation patterns were obtained.
A design of an active antenna with a dielectric resonator stabilized high-electron-mobility transistor (HEMT) oscillator (DRO) and an aperture-coupled patch antenna is reported. The circuit is fabricated using coplanar waveguide (CPW) with the oscillator and the antenna on opposite sides of the substrate. The active antenna was demonstrated at 7.6 GHz; however, the design can be scaled to higher frequencies. Excellent oscillator characteristics and radiation patterns were obtained.
Transport properties of a pseudomorphic In(.20)Ga(.80)As/Al(.23)Ga(.77)As High Electron Mobility Transistor (HEMT) structure were measured by Hall and SdH techniques. Two samples of identical structures but with different doping levels were compared. Low temperature mobility measurements as a function of concentration coincides with the onset of second subband occupancy, indicating that the decrease in mobility is due to intersubband scattering. In spite of the low Al content (23 percent), large persistent photoconductivity (PPC) was observed in the highly doped sample only, showing a direct correlation between the PPC and doping concentration of the barrier layer.
Recent advances in pseudomorphic HEMT MMIC (PMHEMT/MMIC) technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. This paper describes the development of PMHEMT/MMIC components at Ka-band and V-band. Specifically, the following PMHEMT/MMIC components will be described: power amplifiers at Ka-band; power amplifiers at V-band; and four-bit phase shifters at V-band. For the Ka-band amplifier, 125 mW output power with 5.5 dB gain and 21 percent power added efficiency at 2 dB compression point has been achieved. For the V-band amplifier, 112 mW output power with 6 dB gain and 26 percent power added efficiency has been achieved. And, for the V-band phase shifter, four-bit (45 deg steps) phase shifters with less than 8 dB insertion loss from 61 GHz to 63 GHz will be described.
A process to integrate epitaxial lift-off devices and microstrip circuits has been demonstrated using a pseudomorphic HEMT on an alumina substrate. The circuit was a 10 GHz amplifier with the interconnection between the device and the microstrip circuit being made with photolithographically patterned metal. The measured and modeled response correlated extremely well with a maximum gain of 6.8 dB and a return loss of -14 dB at 10.4 GHz.
A cryogenically cooled Ka-band (33.6-GHz), seven-element front-end array for the DSN was built and tested. This system uses seven high electron mobility transistor (HEMT) low-noise amplifiers cooled by a two-stage closed-cycle refrigerator. All system components from the polarizers to the output isolators are cooled to a physical temperature between 18 and 35 K. The noise temperatures of the individual elements range from 64 to 84 K over a 2.75-GHz bandwidth.
This paper reviews recent progress in the development of GaAs metamorphic HEMT (MHEMT) technology for microwave applications. Commercialization has begun, while efforts to further improve performance, manufacturability and reliability continue. We also report the first multi-watt MHEMT MMIC power amplifiers, demonstrating up to 3.2W output power and record power-added efficiency (PAE) at Ka-band.
A simple technique to estimate the channel temperature of a generic AlGaN/GaN HEMTs on SiC or Sapphire, while incorporating temperature dependence of the thermal conductivity is presented. The procedure is validated b y comparing it's predictions with the experimentally measured temperatures in devices presented in three recently published articles.