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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Identification of localized radiation damage in power MOSFETs using EBIC imaging

The rapidly increasing use of electronics in high-radiation environments and the continued evolution in transistor architectures and materials demand improved methods to characterize the potential damaging effects of radiation on device performance. Here, electron-beam-induced current is used to map hot-carrier transport in model metal-oxide semiconductor field-effect transistors irradiated with a 300 KeV focused He + beam as a localized line spanning across the gate and bulk Si. By correlating the damage to the electronic properties and combining these results with simulations, the contribution of spatially localized radiation damage on the device characteristics is obtained. Furthermore, this identified damage, caused by the He + beam, is attributed to localized interfacial P b centers and delocalized positive fixed-charges, as surmised from simulations. Comprehension of the long-term interaction and mobility of radiation-induced damage are key for future design of rad-hard devices.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

Investigation of the Effect of Gate Oxide Screening with Adjustment Pulse on Commercial SiC Power MOSFETs

This paper presents a method to recover the negative threshold voltage shift during high field gate oxide screening of 1.2 kV 4H-SiC MOSFETs with an additional adjustment gate voltage pulse. To reduce field failure rates of the MOSFETs in operation, manufacturers perform a screening treatment to remove devices with extrinsic defects in the oxide. Current gate oxide screening procedures are limited to oxide fields at or below ~9 MV/cm for short durations (<1 s), which is not enough to remove all the devices with extrinsic defects. The results show that by implementing a lower field gate pulse, the threshold voltage shift can be partially recovered, and therefore the maximum screening field and time can be increased. However, both the initial screening pulse and the adjustment pulse require careful calibration to prevent significant degradation of the device threshold voltage, on-resistance, interface state density, or intrinsic lifetime. With a well calibrated set of pulses, higher screening fields can be utilized without significantly damaging the devices. This leads to an improvement in the overall screening efficiency of the process, reducing the number of devices with extrinsic oxide defects entering the field, and improving the reliability of the SiC MOSFETs in operation.

42 ENGINEERING↗
NASA NTRS1982

Power-MOSFET Voltage Regulator

Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

Miller, W. N.↗
NASA NTRS1998

Compendium of Single Event Failures in Power MOSFETs

This compendium of SEGR and SEB data organizes results from several laboratories comparing failure thresholds for several different manufacturers and technologies. The results of this compendium are aimed at the designer to show the possible variations between manufacturers and processes.

Single Event Failures MOSFETs SEGR SEB↗
NASA NTRS2010

Power MOSFET Thermal Instability Operation Characterization Support

Metal-oxide semiconductor field-effect transistors (MOSFETs) are used extensively in flight hardware and ground support equipment. In the quest for faster switching times and lower "on resistance," the MOSFETs designed from 1998 to the present have achieved most of their intended goals. In the quest for lower on resistance and higher switching speeds, the designs now being produced allow the charge-carrier dominated region (once small and outside of the area of concern) to become important and inside the safe operating area (SOA). The charge-carrier dominated region allows more current to flow as the temperature increases. The higher temperatures produce more current resulting in the beginning of thermal runaway. Thermal runaway is a problem affecting a wide range of modern MOSFETs from more than one manufacturer. This report contains information on MOSFET failures, their causes and test results and information dissemination.

Shue, John L.↗
NASA NTRS2010

NASA Engineering and Safety Center Technical Bulletin No. 10-01: Power MOSFET Thermal Instability

In the quest for faster switching times and lower “on resistance” the Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET), produced since 1998, has achieved most intended goals. Unfortunately, lower “on resistance” and higher switching speeds in the designs now being produced allow the charge carrier dominated region to develop conditions that could lead to thermal runaway. Temperatures above 450º C on any location within the part can cause the metals to begin migrating causing a fatal short circuit.

Metal-Oxide Semiconductor Field-Effect Transistor ↗
DOE OSTI2022

Power MOSFET and JBSFET cell topologies with superior high frequency figure of merit

A vertical insulated-gate field effect transistor includes a semiconductor substrate and a gate electrode on a first surface thereof. This gate electrode has a plurality of eight (or more) sided openings extending therethrough. Each of these openings has eight (or more) sidewalls, including a first plurality of sidewalls that are flat relative to a center of the opening and second plurality of sidewalls that are either flat or concave relative to the center of the opening. A source electrode is also provided, which extends into the openings. This source electrode may ohmically contact a source region within the semiconductor substrate. If the field effect transistor is a JBSFET, the source electrode may also form a Schottky rectifying junction with a drift region within the semiconductor substrate.

Baliga, Bantval Jayant↗
NASA NTRS2010

NASA Electronic Parts and Packaging (NEPP) Program - Update

This slide presentation reviews the goals and mission of the NASA Electronic Parts and Packaging (NEPP) Program. The NEPP mission is to provide guidance to NASA for the selection and application of microelectronics technologies, to improve understanding of the risks related to the use of these technologies in the space environment and to ensure that appropriate research is performed to meet NASA mission assurance needs. The program has been supporting NASA for over 20 years. The focus is on the reliability aspects of electronic devices. In this work the program also supports the electronics industry. There are several areas that the program is involved in: Memories, systems on a chip (SOCs), data conversion devices, power MOSFETS, power converters, scaled CMOS, capacitors, linear devices, fiber optics, and other electronics such as sensors, cryogenic and SiGe that are used in space systems. Each of these area are reviewed with the work that is being done in reliability and effects of radiation on these technologies.

LaBel, Kenneth A.↗