Single-Event Latch-up in Commercial Electronics: Risk Assessment and Mitigation
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Radiation Hardness Assurance↗
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Statistical Analysis of Historical SEL Test Data to Provide A Priori Risk Estimates for Use of Unhardened CMOS Parts
SEL is a serious obstacle to use of state-of-the-art microelectronics, and a priori prediction of SEL susceptibility has proven elusive. We develop SEL risk-assessment tools based on analysis of large archives of SEL test data for unhardened CMOS parts. Results include a flexible method for bounding SEL rates even with minimal test data.
Single-event effects↗
Single event phenomena: Testing and prediction
Highly integrated microelectronic devices are often used to increase the performance of satellite systems while reducing the system power dissipation, size, and weight. However, these devices are usually more susceptible to radiation than less integrated devices. In particular, the problem of sensitivity to single event upset and latchup is greatly increased as the integration level is increased. Therefore, a method for accurately evaluating the susceptibility of new devices to single event phenomena is critical to qualifying new components for use in space systems. This evaluation includes testing devices for upset or latchup and extrapolating the results of these tests to the orbital environment. Current methods for testing devices for single event effects are reviewed, and methods for upset rate prediction, including a new technique based on Monte Carlo simulation, are presented.
Kinnison, James D.↗
Device SEE Susceptibility Update: 1996-1998
This paper summarizes single event upset and latchup data from 1996 to 1998 from numerous sources.
single↗
A study of single event upsets in static RAM's
Several types of CMOS static random access memories (RAMs) have been tested in a cyclotron for susceptibility to single event upsets and latchup such as might occur in earth orbit or interplanetary space. No upsets have been observed for neutron fluences of 10 to the 11th n/sq cm and higher or proton fluences of 10 to the 9th protons/sq cm.
Price, W. E.↗
1990 IEEE Annual Conference on Nuclear and Space Radiation Effects, 27th, Reno, NV, July 16-20, 1990, Proceedings
Various papers on nuclear and space radiation effects are presented. The general topics addressed include: basic mechanisms of radiation effects, dosimetry and energy-dependent effects, hardness assurance and testing techniques, single-event upset and latchup, isolation technologies, device and integrated circuit effects and hardening, spacecraft charging and electromagnetic effects.
Fleetwood, Daniel M.↗
Implementation of ionizing radiation environment requirements for Space Station
Proper functioning of Space Station hardware requires that the effects of high-energy ionizing particles from the natural environment and (possibly) from man-made sources be considered during design. At the Space Station orbit of 28.5-deg inclination and 330-440 km altitude, geomagnetically trapped protons and electrons contribute almost all of the dose, while galactic cosmic rays and anomalous cosmic rays may produce Single Event Upsets (SEUs), latchups, and burnouts of microelectronic devices. Implementing ionizing radiation environment requirements for Space Station has been a two part process, including the development of a description of the environment for imposing requirements on the design and the development of a control process for assessing how well the design addresses the effects of the ionizing radiation environment. We will review both the design requirements and the control process for addressing ionizing radiation effects on Space Station.
Boeder, Paul A.↗
Latchup Test Consideration for Analog-to-Digital Converter
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single-event effects latchup↗
Compiled Data On Single-Event Effects Caused By Heavy Ions
Report presents test data on susceptibility of new set of digital integrated circuits and other semiconductor products to single-event effects (soft errors and latchups) caused by heavy ions incident at high energies. Data used to develop generalizations for protecting electronic equipment from single-event effects. In some cases, tested parts selected as candidates for use in specific applications.
Nichols, Donald K.↗
Cosmic ray simulation and testing program
Single event upset (SEU) and latchup vulnerabilities were determined for a number of parts of interest to NASA space programs. In cases where a threshold linear energy transfer (LET) for SEU could be measured, an upset rate in a low inclination Space Shuttle orbit was computed. The predicted upset rates are extremely low, except for the devices with LET thresholds below the geomagnetic cutoff for altitude and inclination of the Space Shuttle orbit. While some of the devices do exhibit latchup, the cross sections and threshold LETs are such that the risk associated with flying these devices in low, near equatorial orbits is small if not negligible.
Kolasinski, W. A.↗
Radiation effects predicted, observed, and compared for spacecraft systems
This paper documents radiation effects observed in selected spacecraft at the system and subsystem levels, and where possible, relates them to predicted radiation effects in parts.
radiation anomalies latchup single-event upset↗
Single Event Effects Test Results for Advanced Field Programmable Gate Arrays
Reconfigurable Field Programmable Gate Arrays (FPGAs) from Altera and Actel and an FPGA-based quick-turnApplication Specific Integrated Circuit (ASIC) from Altera were subjected to single-event testing using heavy ions. Both Altera devices (Stratix II and HardCopy II) exhibited a low latchup threshold (below an LET of 3 MeV-cm2/mg) and thus are not recommended for applications in the space radiation environment. The flash-based Actel ProASIC Plus device did not exhibit latchup to an effective LET of 75 MeV-cm2/mg at room temperature. In addition, these tests did not show flash cell charge loss (upset) or retention damage. Upset characterization of the design-level flip-flops yielded an LET threshold below 10 MeV-cm2/mg and a high LET cross section of about lxlO-6 cm2/bit for storing ones and about lxl0-7 cm2/bit for storing zeros . Thus, the ProASIC device may be suitable for critical flight applications with appropriate triple modular redundancy mitigation techniques.
Field Programmable Gate Arrays↗
Testing Electronic Devices for Single-Event Upset
Report prepared describes equipment and summarizes both pretest and onsite procedures for testing of digital electronic devices for susceptibility to single-event upset. Term "single-event upset" denotes variety of temporary or permanent bit flips or latchup induced by single particles of ionizing radiation. Vacuum chamber houses device under test while exposed to ion beam. Vacuum chamber and associated equipment must be brought to ion-beam facility for test.
Nichols, D. K.↗
Results of Single-event Effects Measurements Conducted by the Jet Propulsion Laboratory
This paper reports recent single-event effects results for a variety of microelectronic devices that include an ADC, DAC, supervisory circuit, FIFO and a Viterbi decoder. The data was collected to evaluate these devices for possible use in NASA spacecraft.
Cyclotron↗
A Shuttle Story: Latchup Qualification of a Truly Commercial Instrument
Destructive single event effects (DSEE) are a main concern for pioneers attempting to use COTS (commercial-off-the-shelf) devices in space, so a COTS instrument full of such devices is particulary scary.
EEPROM SRTM↗
Virtex-II Pro SEE Test Methods and Results
The objective of this coarse Single Event Effect (SEE) test is to determine the suitability of the commercial Virtex-II Pro family for use in spaceflight applications. To this end, this test is primarily intended to determine any Singe Event Latchup (SEL) susceptibilities for these devices. Secondly, this test is intended to measure the level of Single Event Upset (SEU) susceptibilities and in a general sense where they occur. The coarse SEE test was performed on a commercial XC2VP7 device, a relatively small single processor version of the Virtex-II Pro. As the XC2VP7 shares the same functional block design and fabrication process with the larger Virtex-II Pro devices, the results of this test should also be applicable to the larger devices. The XC2VP7 device was tested on a commercial Virtex-II Pro development board. The testing was performed at the Cyclotron laboratories at Texas A&M and Michigan State Universities using ions of varying energy levels and fluences.
Petrick, David↗
Trends in Device SEE Susceptibility from Heavy Ions
The sixth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications in December issues of IEEE - Nuclear Science Transactions for 1985, 1987, 1989, 1991, and the IEEE Workshop Record, 1993. Trends in SEE susceptibility (including soft errors and latchup) for state-of- are evaluated.
single event effects latchup radiation hardening↗
Laser Scanner Tests For Single-Event Upsets
Microelectronic advanced laser scanner (MEALS) is opto/electro/mechanical apparatus for nondestructive testing of integrated memory circuits, logic circuits, and other microelectronic devices. Multipurpose diagnostic system used to determine ultrafast time response, leakage, latchup, and electrical overstress. Used to simulate some of effects of heavy ions accelerated to high energies to determine susceptibility of digital device to single-event upsets.
Kim, Quiesup↗