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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

Design, fabrication, and testing of a cryogenic thermal diode

Cryogenic heat pipe diode applications and a new heat pipe geometry are discussed. This new geometry employs excess liquid to block the vapor space of the evaporator and part of the transport section during reverse mode conditions. An orifice plate is positioned in the pipe at the blocking meniscus location, with the opening arranged to permit proper liquid distribution in both ground tests and zero g operation. Experimental data are presented for a room temperature heat pipe modified to operate as a blocking orifice diode. The test results verify feasibility of the blocking orifice technique with the diode having a rapid shutoff characteristic. The selection of a diode for fabrication and test was based mainly on a parametric investigation of the liquid trap and liquid blockage techniques. The blocking orifice form of liquid blockage was selected for the cryogenic diode based on its high throughput, small reservoir requirement, and small energy and time required for shutoff.

Quadrini, J.↗
NASA NTRS1977

Shock isolator for diode laser operation on a closed-cycle refrigerator

Closed-cycle helium refrigerators are widely used as coolers for semiconductor diode lasers. These refrigerators pose several difficulties including temperature oscillations due to varying refrigerator capacity during the Solvay cycle, and impact shocks delivered to the diode in the cycle's expansion phase. A shock isolator has been designed to isolate diode lasers from such impact shocks. Slow diode current scans have been made before installation of the shock isolator, with the isolator but no thermal damper, and with both devices. With the isolator and no damper, the diode output frequency oscillated at the refrigerator cycle rate, deviating by plus or minus 40 MHz. Using the isolator and the damper no frequency fluctuation was detected.

Jennings, D. E.↗
NASA NTRS1981

Gallium phosphide high temperature diodes

High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

Chaffin, R. J.↗
NASA NTRS1981

Schottky diode mm detectors with improved sensitivity and dynamic range

A detector which features a low-barrier Si Schottky diode is discussed. The unbiased diode has a sensitivity of -60 dBm and a range of 50 dB at 95 GHz, and fixed tuning yields a sensitivity within 2 dB from 75-110 GHz. A limitation of the low-barrier diode is a reduction in the low-level sensitivity by 16 dB under a 100 kilohms load. Use of the diode with a video impedance of 120 kilohms enables the offset voltage to be nulled with an appropriate control. Operation of the diode in a waveguide mount for use as a mixer is described, along with detector rectification.

Kerr, A. R.↗
NASA NTRS1982

Fast recovery, high voltage silicon diodes for AC motor controllers

The fabrication and characterization of a high voltage, high current, fast recovery silicon diode for use in AC motor controllers, originally developed for NASA for use in avionics power supplies, is presented. The diode utilizes a positive bevel PIN mesa structure with glass passivation and has the following characteristics: peak inverse voltage - 1200 volts, forward voltage at 50 amperes - 1.5 volts, reverse recovery time of 200 nanoseconds. Characterization data for the diode, included in a table, show agreement with design concepts developed for power diodes. Circuit diagrams of the diode are also given.

Balodis, V.↗
NASA NTRS1984

High-efficiency V-band GaAs IMPATT diodes

Double-drift GaAs IMPATT diodes were designed for V-band frequency operations and fabricated using molecular-beam epitaxy. The diodes were fabricated in two configurations: (1) circular mesa diodes with silver-plated (integrated) heat sinks: (2) pill-type diodes bonded to diamond heat sinks. Both configurations utilized a miniature quartz-ring package. Output power greater than 1 W CW was achieved at V-band frequencies from diodes on diamond heat sinks. The best conversion efficiency was 13.3 percent at 55.5 GHz with 1 W output power.

Ma, Y. E.↗
NASA NTRS1985

Double Light-Emitting Diode

Two GaAs light-emitting diodes packaged as single unit offer greater reliability than conventional single-diode package. One diode is primary light source. If it fails, backup diode switched in. Each diode has separate power lead, so either or both switched on or off at same time.

Johnson, R. L.↗
NASA NTRS1984

The integration of bypass diodes with terrestrial photovoltaic modules and arrays

Bypass diodes are often required to limit the potential for reverse voltage 'hot-spot' heating in high voltage arrays or in arrays that undergo periodic operation near the short-circuit point. In addition, when properly applied, bypass diodes can minimize the effect of shadowing and various internal module failures on the array energy output. This paper discusses the mechanical and electrical integration of bypass diodes beginning with the array-level considerations which influence the selection of an implementation approach. Concepts for the mounting of these diodes, both internally within the module encapsulant and externally to the exposed rear surface of the module, are described. Factors affecting the reliability of bypass diodes, including the control of junction temperature through adequate heat sinking and the derating of reverse voltage, are discussed.

Shepard, N. F., Jr.↗
NASA NTRS1987

Means for phase locking the outputs of a surface emitting laser diode array

An array of diode lasers, either a two-dimensional array of surface emitting lasers, or a linear array of stripe lasers, is phase locked by a diode laser through a hologram which focuses the output of the diode laser into a set of distinct, spatially separated beams, each one focused onto the back facet of a separate diode laser of the array. The outputs of the diode lasers thus form an emitted coherent beam out of the front of the array.

Lesh, James R.↗
NASA NTRS1988

Millimeter-wave diode-grid frequency doubler

Monolithic diode grids were fabricated on 2-cm square gallium-arsenide wafers in a proof-of-principle test of a quasi-optical varactor millimeter-wave frequency multiplier array concept. An equivalent circuit model based on a transmission-line analysis of plane wave illumination was applied to predict the array performance. The doubler experiments were performed under far-field illumination conditions. A second-harmonic conversion efficiency of 9.5 percent and output powers of 0.5 W were achieved at 66 GHz when the diode grid was pumped with a pulsed source at 33 GHz. This grid had 760 Schottky-barrier varactor diodes. The average series resistance was 27 ohms, the minimum capacitance was 18 fF at a reverse breakdown voltage of -3 V. The measurements indicate that the diode grid is a feasible device for generating watt-level powers at millimeter frequencies and that substantial improvement is possible by improving the diode breakdown voltage.

Jou, Christina F.↗
NASA NTRS1991

Diode laser power module for beamed power transmission

Recent progress with powerful, efficient, and coherent monolithic diode master-oscillator/power-amplifier (M-MOPA) systems is promising for the development of a space-based diode laser power station. A conceptual design of a 50-kW diode laser power module was made for space-based power stations capable of beaming coherent power to the moon, Martian rovers, or other satellites. The laser diode power module consists of a solar photovoltaic array or nuclear power source, diode laser arrays (LDAs), a phase controller, beam-steering optics, a thermal management unit, and a radiator. Thermal load management and other relevant aspects of the system (such as power requirements and system mass) are considered. The 50-kW power module described includes the highest available efficiency of LD M-MOPA system to date. However, the overall efficiency of three amplifier stages, including the coupling efficiency, turns out to be 55.5 percent. Though a chain of PA stages generates a high-power coherent beam, there is a penalty due to the coupling loss between stages. The specific power of the 50-kW module using solar power is 6.58 W/kg.

Choi, S. H.↗
NASA NTRS1990

Submillimeter sources for radiometry using high power Indium Phosphide Gunn diode oscillators

A study aimed at developing high frequency millimeter wave and submillimeter wave local oscillator sources in the 60-600 GHz range was conducted. Sources involved both fundamental and harmonic-extraction type Indium Phosphide Gunn diode oscillators as well as varactor multipliers. In particular, a high power balanced-doubler using varactor diodes was developed for 166 GHz. It is capable of handling 100 mW input power, and typically produced 25 mW output power. A high frequency tripler operating at 500 GHz output frequency was also developed and cascaded with the balanced-doubler. A dual-diode InP Gunn diode combiner was used to pump this cascaded multiplier to produce on the order of 0.5 mW at 500 GHz. In addition, considerable development and characterization work on InP Gunn diode oscillators was carried out. Design data and operating characteristics were documented for a very wide range of oscillators. The reliability of InP devices was examined, and packaging techniques to enhance the performance were analyzed. A theoretical study of a new class of high power multipliers was conducted for future applications. The sources developed here find many commercial applications for radio astronomy and remote sensing.

Deo, Naresh C.↗
NASA NTRS1994

Near-IR diode laser absorption for measurement of tropospheric HO2

The possibility of using tunable lead salt diode lasers in the infrared for measurement of tropospheric HO2 has been frequently considered. Although the sensitivity of diode laser absorption has been improved through the use of high frequency detection techniques, nature has been unkind in that the HO2 absorption cross sections are weak. Even using the most optimistic assumptions about attainable path length and detectable absorbance, measurement of tropospheric HO2 by diode laser absorption in the mid-IR appears marginal. A possible alternative method for measuring HO2 is by absorption at near-infrared wavelengths. Several absorption bands of HO2 occur in the wavelength region between 1.2 and 1.6 micron due to electronic transitions and overtones of the fundamental vibrational modes. InGaAsP diode lasers operate in this wavelength region and can be used for high resolution spectroscopy in a manner analogous to the lead salt lasers. A diode laser system in the near-IR offers some advantages.

Stanton, Alan C.↗
NASA NTRS1994

Laser Diode Ignition (LDI)

This paper reviews the status of the Laser Diode Ignition (LDI) program at Sandia National Labs. One watt laser diodes have been characterized for use with a single explosive actuator. Extensive measurements of the effect of electrostatic discharge (ESD) pulses on the laser diode optical output have been made. Characterization of optical fiber and connectors over temperature has been done. Multiple laser diodes have been packaged to ignite multiple explosive devices and an eight element laser diode array has been recently tested by igniting eight explosive devices at predetermined 100 ms intervals.

Kass, William J.↗
NASA NTRS1997

Construction of a Visible Diode Laser Source for Free Radical Photochemistry and Spectroscopy Experiments

Tunable diode lasers are reliable sources of narrow-band light and comparatively cheap. Optical feedback simplifies frequency tuning of the laser diodes. We are building an inexpensive diode laser system incorporating optical feedback from a diffraction grating. The external optical cavity can be used with lasers that emit between 2 and 100 mW, and will also work if they are pulsed, although this will significantly degrade the bandwidth. The diode laser output power and bandwidth are comparable to CW dye lasers used in kinetics and dynamics experiments. However, their cost and maintenance will be much less as will alignment time. We intend to use the diode lasers to investigate CN and C2 kinetics as well as to study dissociation dynamics of atmospherically important molecules.

Newman, Bronjelyn↗
NASA NTRS2001

Electro-Thermal Simulation Studies of SiC Junction Diodes Containing Screw Dislocations Under High Reverse-Bias Operation

The objective of this work was to conduct a modeling study of SiC P-N junction diodes operating under high reverse biased conditions. Analytical models and numerical simulation capabilities were to be developed for self-consistent electro-thermal analysis of the diode current-voltage (I-V) characteristics. Data from GRC indicate that screw dislocations are unavoidable in large area SiC devices, and lead to changes in the SiC diode electrical response characteristics under high field conditions. For example, device instability and failures linked to internal current filamentation have been observed. The physical origin of these processes is not well understood, and quantitative projections of the electrical behavior under high field and temperature conditions are lacking. Thermal calculations for SiC devices have not been reported in the literature either. So estimates or projections of peak device temperatures and power limitations do not exist. This numerical study and simulation analysis was aimed at resolving some of the above issues. The following tasks were successfully accomplished: (1) Development of physically based models using one- and two-dimensional drift-diffusion theory for the transport behavior and I-V characteristics; (2) One- and two-dimensional heat flow to account for internal device heating. This led to calculations of the internal temperature profiles, which in turn, were used to update the electrical transport parameters for a self-consistent analysis. The temperature profiles and the peak values were thus obtainable for a given device operating condition; (3) Inclusion of traps assumed to model the presence of internal screw dislocations running along the longitudinal direction; (4) Predictions of the operating characteristics with and without heating as a function of applied bias with and without traps. Both one and two-dimensional cases were implemented; (5) Assessment of device stability based on the operating characteristics. The presence of internal non-uniformities, particularly filamentary structures, was probed and demonstrated; (6) Cause and physical origins of filamentary behavior and unstable I-V characteristics were made transparent; (7) It was demonstrated that diodes containing defects would be more prone to thermal breakdown associated with the temperature dependent decrease in the thermal conductivity; and (8) Finally, negative differential resistance (S-shaped NDR) which can potential lead to device instability and filamentary behavior was shown to occur for diodes containing a line of defects such as could be associated with a screw dislocation line.

Joshi, R. P.↗
NASA NTRS2003

High Power Laser Diode Arrays for 2-Micron Solid State Coherent Lidars Applications

Laser diode arrays are critical components of any diode-pumped solid state laser systems, constraining their performance and reliability. Laser diode arrays (LDAs) are used as the pump source for energizing the solid state lasing media to generate an intense coherent laser beam with a high spatial and spectral quality. The solid state laser design and the characteristics of its lasing materials define the operating wavelength, pulse duration, and power of the laser diodes. The pump requirements for high pulse energy 2-micron solid state lasers are substantially different from those of more widely used 1-micron lasers and in many aspects more challenging [1]. Furthermore, the reliability and lifetime demanded by many coherent lidar applications, such as global wind profiling from space and long-range clear air turbulence detection from aircraft, are beyond the capability of currently available LDAs. In addition to the need for more reliable LDAs with longer lifetime, further improvement in the operational parameters of high power quasi-cw LDAs, such as electrical efficiency, brightness, and duty cycle, are also necessary for developing cost-effective 2-micron coherent lidar systems for applications that impose stringent size, heat dissipation, and power constraints. Global wind sounding from space is one of such applications, which is the main driver for this work as part of NASA s Laser Risk Reduction Program. This paper discusses the current state of the 792 nm LDA technology and the technology areas being pursued toward improving their performance. The design and development of a unique characterization facility for addressing the specific issues associated with the LDAs for pumping 2-micron coherent lidar transmitters and identifying areas of technological improvement will be described. Finally, the results of measurements to date on various standard laser diode packages, as well as custom-designed packages with potentially longer lifetime, will be reported.

Amzajerdian, Farzin↗
NASA NTRS2004

Silicon Carbide Schottky Barrier Diode

This chapter reviews the status of SiC Schottky barrier diode development. The fundamental of Schottky barrier diodes is first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes, and merged-pin-Schottky diodes. The development history is reviewed ad the key performance parameters are discussed. Applications of SiC SBDs in power electronic circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

Zhao, Jian H.↗