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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Process for making metal-oxide/semiconductor field-effect transistors (MOSFET's) results in gate-channel lengths of only few hundred angstroms about 100 times as small as state-of-the-art devices. Gates must be shortened to develop faster MOSFET's; proposed fabrication process used to study effects of size reduction in MOS devices and eventually to build practical threedimensional structures.
Techniques appropriate to boards containing CMOS circuits detailed. Document presents procedure for applying thin conformal coating to such electronic assemblies as printed-circuit boards and wire-wrapped boards. Coating is from 1 to 7 mils (25 to 178 micrometers) thick and composed of room-temperature-vulcanizing (RTV) silicone. Specifies materials, equipment, spraying method, and quality requirements. Takes into account special needs of circuits made with complementary metal-oxide/semiconductor (CMOS) devices on circuit boards. Special attention given to preventing damage by electrostatic discharge, to which CMOS circuits especially sensitive.
Thin films of metal-oxide/polymer applied by ion-beam sputtering. Report describes experiments in development of coatings to protect polymers from bombardment by atomic oxygen.
Concept for determining susceptibility of integrated circuits to single-event upsets (SEU's) based on direct measurement of critical charge causing upset. Test circuit is modified version of standard complementary metal-oxide/semiconductor static cell. Contains six transistors, connected to form latch that retains state of cell set by input pulses. Makes possible to evaluate vulnerability to SEU during design and development of digital equipment.
Report presents theory and experimental data regarding newly discovered mode for single-event upsets, (SEU's) in complementary metal-oxide/semiconductor, static random-access memories, CMOS SRAM's. SEU cross sections larger than those expected from previously known modes given rise to speculation regarding additional mode, and subsequent cross-section measurements appear to confirm speculation.
Two hybrid infrared (IR) detector arrays of antimony-doped silicon (Si:Sb) were produced and tested to evaluate their potential for use in low-background IR astronomy applications. The format of the arrays is 58 x 62 elements, with 76 micron-square pixels. A random-access, switched metal-oxide semiconductor field effect transistor (MOSFET) silicon multiplexer is used to read out the array elements. Reduced-background tests of signal, noise, and noise equivalent power were conducted over the temperature range 3.2 to 12 K. The arrays were found to have good sensitivity and good uniformity.
Two modules of gallium-doped germanium (Ge:Ga) infrared detectors with integrated multiplexing readouts and supporting drive electronics were designed and tested. This development investigated the feasibility of producing two-dimensional Ge:Ga arrays by stacking linear modules in a housing capable of providing uniaxial stress for enhanced long-wavelength response. Each module includes 8 detectors (1x1x2 mm) mounted to a sapphire board. The element spacing is 12 microns. The back faces of the detector elements are beveled with an 18 deg angle, which was proved to significantly enhance optical absorption. Each module includes a different silicon metal-oxide semiconductor field effect transistor (MOSFET) readout. The first circuit was built from discrete MOSFET components; the second incorporated devices taken from low-temperature integrated circuit multiplexers. The latter circuit exhibited much lower stray capacitance and improved stability. Using these switched-FET circuits, it was demonstrated that burst readout, with multiplexer active only during the readout period, could successfully be implemented at approximately 3.5 K.
Consistent metal-oxide cross sections prepared quickly. New process makes TEM/STEM cross sections of metal/oxide interfaces. After specimen bars oxidized, placed in specially designed mold. Following encapsulation in zinc alloy, 3-mm-diameter specimen bar sliced into disks suitable for further preparation steps. Technique used to prepare 3-mm-diameter specimens of cross sections of oxides of alloys intended for use at temperatures greater than approximately 600 degree C.
To achieve permanent human presence and activity on the moon, oxygen is required for both life support and propulsion. Lunar oxygen production using resources existing on the moon will reduce or eliminate the need to transport liquid oxygen from earth. In addition, the co-products of oxygen production will provide metals, structural ceramics, and other volatile compounds. This will enable development of even greater self-sufficiency as the lunar outpost evolves. Ilmenite is the most abundant metal-oxide mineral in the lunar regolith. A process involving the reaction of ilmenite with hydrogen at 1000 C to produce water, followed by the electrolysis of this water to provide oxygen and recycle the hydrogen has been explored. The objective of this 1990 Summer Faculty Project was to design a lunar oxygen-production plant to provide 5 metric tons of liquid oxygen per year from lunar soil. The results of this study describe the size and mass of the equipment, the power needs, feedstock quantity and the engineering details of the plant.
The architecture for competitive assignment is described with attention given to the VLSI design and critical circuits fabricated in complementary metal-oxide semiconductor. The local application of association costs to processing units reduces the connectivity to the number of VLSI-compatible processing units. 'Hysteretic annealing' is discussed and when compared to mean-field annealing is found to enhance processing-unit gain and provide near-optimal solutions in about 150 microsec.
Metal-oxide absorbents (MOAs) have a demonstrated capability for removal of both metabolic CO2 and H2O from breathing atmospheres, simplifying portable life support system (PLSS) design and affording reversible operation for regeneration. Attention is presently given to the comparative performance levels obtained by silver-oxide-based and silver/zinc-oxide-based systems, which also proved to be longer-lasting than the silver oxide-absorber system. The silver/zinc system is found to substantially simplify the ventilation loop of a prospective Space Station Freedom PLSS.
Custom-made single-chip complementary metal-oxide semiconductor (CMOS) integrated circuit designed to reveal effects of ionizing radiation on itself and similar integrated circuits. Potential terrestrial use: safety-oriented monitoring of ionizing radiation at nuclear powerplants, nuclear-waste sites, and the like.
Susceptibilities of power metal-oxide/semiconductor field-effect transistors (MOSFET's) to single-event gate ruptures analyzed by exposing devices to beams of energetic bromine ions while applying appropriate bias voltages to source, gate, and drain terminals and measuring current flowing into or out of each terminal.
Soaps made from strong organic base guanidine and organic fatty acids serve as vehicles and binders for coating ceramic fibers, various smooth substrates, and other problematic surfaces with thin precious-metal or metal-oxide films. Films needed to serve as barriers to diffusion in fiber/matrix ceramic composite materials. Guanidine soaps entirely organic and burn off, leaving no residues.
Computer-controlled system tests metal-oxide/semiconductor field-effect transistors (MOSFET's) at high voltages and currents. Measures seven parameters characterizing performance of MOSFET, with view toward obtaining early indication MOSFET defective. Use of test system prior to installation of power MOSFET in high-power circuit saves time and money.
To anticipate future long-duration mission needs for life support sensors, we explored the feasibility of using thin-film metal-oxide semiconductors. The objective of this task was to develop gas sensors for life support applications which would be suitable for long-duration missions. Metal oxides, such as ZnO, SnO2, and TiO2 have been shown to react with oxygen molecules. Oxygen lowers the metal oxide's electrical resistance. Critical to the performance is the application of the oxide in a thin film on an inert substrate: the thinner the film, the more readily the oxygen penetration and hence the more rapid and sensitive the sensor. Metal oxides are not limited to oxygen detection, rather, oxides offer detection and quantification applications to the complete range of gases of interest, not only for life support systems, but for propellants as well.
The development of a family of silicon based integrated vibration sensors capable of sensing mechanical resonances over a broad range of frequencies with minimal signal processing requirements is presented. Two basic general embodiments of the concept were designed and fabricated. The first design was structured around an array of cantilever beams and fabricated using the ARPA sponsored multi-user MEMS processing system (MUMPS) process at the Microelectronics Center of North Carolina (MCNC). As part of the design process for this first sensor, a comprehensive finite elements analysis of the resonant modes and stress distribution was performed using PATRAN. The dependence of strain distribution and resonant frequency response as a function of Young's modulus in the Poly-Si structural material was studied. Analytical models were also studied. In-house experimental characterization using optical interferometry techniques were performed under controlled low pressure conditions. A second design, intended to operate in a non-resonant mode and capable of broadband frequency response, was proposed and developed around the concept of a cantilever beam integrated with a feedback control loop to produce a null mode vibration sensor. A proprietary process was used to integrat a metal-oxide semiconductor (MOS) sensing device, with actuators and a cantilever beam, as part of a compatible process. Both devices, once incorporated as part of multifunction data acquisition and telemetry systems will constitute a useful system for NASA launch vibration monitoring operations. Satellite and other space structures can benefit from the sensor for mechanical condition monitoring functions.
This investigation concludes a study to determine the effects of up to 25 atomic percent of 55 alloying additions on the oxidation characteristics of niobium. The alloys were evaluated by oxidizing in an air atmosphere for 4 hours at 1000 C and 2 hours at 1200 C. Titanium and chromium improved oxidation resistance at both evaluation conditions. Vanadium and aluminum improved oxidation resistance at 1000 C, even though the V scale tended to liquefy and the Al specimens became brittle and the scale powdery. Copper, cobalt, iron, and iridium improved oxidation resistance at 1200 C. Other investigations report tungsten and molybdenum are protective up to about 1000 C, and tantalum at 1100 C. The most important factor influencing the rate of oxidation was the ion size of the alloy additions. Ions slightly smaller than the Nb(5+) ion are soluble in the oxide lattice and tend to lower the compressive stresses in the bulk scale that lead to cracking. The solubility of the alloying addition also depends on the valence to some extent. All of the elements mentioned that improve the oxidation resistance of Nb fit this size criterion with the possible exception of Al, whose extremely small size in large concentrations would probably lead to the formation of a powdery scale. Maintenance of a crack-free bulk scale for as long as possible may contribute to the formation of a dark subscale that ultimately is rate- controlling in the oxidation process. The platinum-group metals, especially Ir, appear to protect by entrapment of the finely dispersed alloying element by the incoming Nb2O5 metal-oxide interface. This inert metallic Ir when alloyed in a sufficient amount with Yb appears to give a ductile phase dispersed in the brittle oxide. This scale would then flow more easily to relieve the large compressive stresses to delay cracking. Complex oxide formation (which both Ti and Zr tend to initiate) and valence effects, which probably change the vacancy concentration in the scale, are masked by the overriding tendency for a porous scale.