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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Effects of surface contamination on the infrared emissivity and visible-light scattering of highly reflective surfaces at cryogenic temperatures

A technique is described for the simultaneous in situ measurement of film thickness, refractive index, total normal emissivity, visible light scattering, and reflectance of contaminant films on a highly reflective liquid nitrogen-cooled, stainless steel substrate. Emissivities and scattering data were obtained for films of water, carbon dioxide, silicone oil, and a number of aromatic and aliphatic hydrocarbons as a function of film thickness between zero and 20 microns. Water had the greatest effect on emissivity, followed by silicone oil, aliphatic hydrocarbons, aromatic hydrocarbons, and carbon dioxide. Emissivity increased more rapidly with film thickness between zero and 2.5 microns, than at thickness greater than 2.5 microns. Scattering of visible light changed little below 2-microns thickness but increased rapidly with thickness beyond 2 to 3 microns. The effect of contaminant films on passive radiation coolers is discussed.

Viehmann, W.↗
NASA NTRS1986

Effect of hard particle impacts on the atomic oxygen survivability of reflector surfaces with transparent protective overcoats

Silver mirror samples with protective coatings were subjected to a stream of 27 microns alumina particles to induce pinhole defects. The protective coating consisted of a layer of aluminum dioxide over silver followed by a layer of silicon dioxide over the alumina. Samples were prepared on both graphite-epoxy composite and fused quartz substrates. After exposure to the hard particle stream, the samples were exposed to an oxygen plasma environment in a laboratory plasma asher. The effects of both the hard particles and the oxygen plasma were documented by both reflectance measurements and scanning electron microscopy. The results indicated that oxidative damage to the silver reflecting layer continues beyond that of the erosively exposed silver. Oxidative undercutting of the silver layer and graphite-epoxy substrate continues in undamaged areas through adjacent, particle damaged defect sites. This may have implications for the use of such mirrors in a space station solar dynamic power system.

Gulino, D. A.↗
NASA NTRS1987

Effect of hard particle impacts on the atomic oxygen survivability of reflector surfaces with transparent protective overcoats

Silver mirror samples with protective coatings were subjected to a stream of 27 microns alumina particles to induce pinhole defects. The protective coating consisted of a layer of aluminum dioxide over silver followed by a layer of silicon dioxide over the alumina. Samples were prepared on both graphite-epoxy composite and fused quartz substrates. After exposure to the hard particle stream, the samples were exposed to an oxygen plasma environment in a laboratory plasma asher. The effects of both the hard particles and the oxygen plasma were documented by both reflectance measurements and scanning electron microscopy. The results indicated that oxidative damage to the silver reflecting layer continues beyond that of the erosively exposed silver. Oxidative undercutting of the silver layer and graphite-epoxy substrate continues in undamaged areas through adjacent, particle damaged defect sites. This may have implications for the use of such mirrors in a space station solar dynamic power system.

Gulino, Daniel A.↗
NASA NTRS2010

Graphene-Based Reversible Nano-Switch/Sensor Schottky Diode

This proof-of-concept device consists of a thin film of graphene deposited on an electrodized doped silicon wafer. The graphene film acts as a conductive path between a gold electrode deposited on top of a silicon dioxide layer and the reversible side of the silicon wafer, so as to form a Schottky diode. By virtue of the two-dimensional nature of graphene, this device has extreme sensitivity to different gaseous species, thereby serving as a building block for a volatile species sensor, with the attribute of having reversibility properties. That is, the sensor cycles between active and passive sensing states in response to the presence or absence of the gaseous species.

Miranda, Felix A.↗
NASA NTRS2005

Permeability of Candidate Stirling Heater Head Materials Measured

Researchers at the NASA Glenn Research Center are evaluating high-temperature materials for Stirling heater heads for second- and third-generation Stirling radioisotope power systems that would help to increase the system efficiency to 30 to 35 percent and the system specific power to 8 to 10+ W/kg. Ceramic materials could make it possible for the convertor hot-end temperature to be increased to 1050 to 1200 C, in comparison to the current 650 C with an Inconel 718 heater head. A hermetically sealed Stirling heater head must retain a constant internal pressure of nearly 400-psi helium (He) throughout its useful life (120,000 hr) at the design operating temperature. Therefore, He permeability was measured for eight potential materials and compared with the permeability of the current heater head material, Inconel 718. The eight materials included silicon nitride (Si3N4), silicon dioxide (SiO2), both sintered and chemical vapor deposited (CVD) silicon carbide (SiC), alumina (Al2O3), two types of melt-infiltrated (MI) SiC/SiC composites, and a carbon/SiC composite (C/SiC). Glenn submitted samples of each material to Porous Materials, Inc., Ithaca, New York, for permeability analysis. At room temperature and 30-psi He, four materials--Si3N4, Al2O3, SiO2, and sintered SiC--demonstrated lower permeability than Inconel 718. The CVD SiC and all the composite materials were significantly more permeable to He than the baseline material.

Freedman, Marc R.↗
NASA NTRS1991

Advanced silicon on insulator technology

Undoped, thin-layer silicon-on-insulator was fabricated using wafer bonding and selective etching techniques employing a molecular beam epitaxy (MBE) grown Si0.7Ge0.3 layer as an etch stop. Defect free, undoped 200-350 nm silicon layers over silicon dioxide are routinely fabricated using this procedure. A new selective silicon-germanium etch was developed that significantly improves the ease of fabrication of the bond and etch back silicon insulator (BESOI) material.

Godbey, D.↗
NASA NTRS1988

Atomic oxygen effects on candidate coatings for long-term spacecraft in low earth orbit

Candidate atomic oxygen protective coatings for long-term low Earth orbit (LEO) spacecraft were evaluated using the Los Alamos National Laboratory O-atom exposure facility. The coatings studied include Teflon, Al2O3, SiO2, and SWS-V-10, a silicon material. Preliminary results indicate that sputtered PTFE Teflon (0.1 micrometers) has a fluence lifetime of 10 to the 19th power O-atoms/cm (2), and sputtered silicon dioxide (0.1 micrometers), aluminum oxide (0.1 micrometers), and SWS-V-10, a silicone, (4 micrometers) have fluence lifetimes of 10 to the 20th power to 10 to the 21st power O-atoms/cm (2). There are large variations in fluence lifetime data for these coatings.

Lan, E. H.↗
NASA NTRS1965

Instruction manual for epitaxial apparatus

Instruction manual for apparatus using programmer operation of electronic valves for etching and growth of single crystal silicon, deposition of silicon dioxide, and nucleation site treatment

MANUAL↗
NASA NTRS2006

FETs Based on Doped Polyaniline/Polyethylene Oxide Fibers

A family of experimental highly miniaturized field-effect transistors (FETs) is based on exploitation of the electrical properties of nanofibers of polyaniline/ polyethylene oxide (PANi/PEO) doped with camphorsulfonic acid. These polymer-based FETs have the potential for becoming building blocks of relatively inexpensive, low-voltage, highspeed logic circuits that could supplant complementary metal oxide/semiconductor (CMOS) logic circuits. The development of these polymerbased FETs offers advantages over the competing development of FETs based on carbon nanotubes. Whereas it is difficult to control the molecular structures and, hence, the electrical properties of carbon nanotubes, it is easy to tailor the electrical properties of these polymerbased FETs, throughout the range from insulating through semiconducting to metallic, through choices of doping levels and chemical manipulation of polymer side chains. A further advantage of doped PANi/PEO nanofibers is that they can be made to draw very small currents and operate at low voltage levels, and thus are promising for applications in which there are requirements to use many FETs to obtain large computational capabilities while minimizing power demands. Fabrication of an experimental FET in this family begins with the preparation of a substrate as follows: A layer of silicon dioxide between 50 and 200 nm thick is deposited on a highly doped (resistivity 0.01 W.cm) silicon substrate, then gold electrodes/contact stripes are deposited on the oxide. Next, one or more fibers of camphorsulphonic acid-doped PANi/PEO having diameters of the order of 100 nm are electrospun onto the substrate so as to span the gap between the gold electrodes (see Figure 1). Figure 2 depicts measured current-versus-voltage characteristics of the device of Figure 1, showing that saturation channel currents occur at source-todrain potentials that are surprisingly low, relative to those of CMOS FETs. The hole mobility in the depletion regime in this transistor was found to be 1.4 10(exp -4) sq cm/(V.s), while the one-dimensional charge density at zero gate bias was estimated to be approximately one hole per 50 two-ring repeat units of polyaniline, consistent with the rather high channel conductivity (approx. 10(exp -3) S/cm). Reducing or eliminating the PEO content of the fibers is expected to enhance the properties of future versions of this transistor.

Theofylaktos, Noulie↗
DOE OSTI2020

Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths

Characterization of the vacuum ultraviolet (VUV) reflectance of silicon photomultipliers (SiPMs) is important for large-scale SiPM-based photodetector systems. In this work, we report the angular dependence of the specular reflectance in vacuum of SiPMs manufactured by Fondazionc Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) over wavelengths ranging from 120 to 280 nm. Refractive index and extinction coefficient of the thin silicon-dioxide film deposited on the surface of the FBK SiPMs are derived from reflectance data of an FBK silicon wafer with the same deposited oxide film as SiPMs. The diffuse reflectance of SiPMs is also measured at 193 nm. We use the VUV spectral dependence of the optical constants to predict the reflectance of the FBK silicon wafer and FBK SiPMs in liquid xenon.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1986

A study of reactive plasma deposited thin films

A state-of-the-art research laboratory was established to grow and characterize amorphous thin films that are useful in semi-conductor devices. Two film systems, nitride films and silicon dioxide films were studied. Over seventy deposition runs for nitride films were made. The films were deposited on silicon substrate using plasma enhanced chemical vapor deposition. It was found that the uniformity of the films were affected by the location of the film on the platen.

Gilchrist, J.↗
NASA NTRS1997

Investigation of Field Emitter Array Vacuum Microtriodes for Space Electronics Applications

Research into processing techniques for fabrication of vacuum microelectronic devices has been carried out, with special emphasis being given to the growth of silicon dioxide thin films. Oxide films ranging from 30 nm to approximately 2 micrometers have been grown on single crystal silicon wafers. Metal-oxide-semiconductor capacitor test structures have been made from some of these oxide films, and current-versus-voltage plots for these structures have been measured. It has been observed that the rate of applied voltage across the oxide films produces marked differences in measured leakage current. Breakdown fields across two of the thinnest oxide films have been measured and are comparable with highest values reported in literature. Several silicon wafers were processed to make field- emitter array diodes, and were delivered to collaborators at NASA-Lewis Research Center for final fabrication steps and testing.

Smith, Mark A.↗
NASA NTRS1981

Four- and five-layer silicon-clad dielectric waveguides

Computer modeling studies conducted on four-layer silicon-clad dielectric waveguides indicate that the attenuation (alpha) and mode index (beta/K) behave as exponentially damped sinusoids as the silicon thickness is increased. The observed effect can be explained quite simply as a periodic coupling between the guided modes of the lossless structure and the lossy modes supported by the high-refractive index silicon. The attenuation and mode index are significantly altered by conductivity changes in the silicon; an amplitude modulator and an intensity modulator were proposed using these results. Predicted high attenuations in the device may be reduced significantly with a silicon dioxide buffer layer between the semiconductor and the polystyrene guide. Experimental confirmation of the predicted characteristics is still necessary. A number of thin-silicon film waveguides have been RF sputtered but attenuation measurements to verify the damped oscillatory behavior are forthcoming. Conductivity variations of the silicon should demonstrate the modulation capabilities.

Mcwright, G.↗