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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Self-Testing Computer Memory

Memory system for computer repeatedly tests itself during brief, regular interruptions of normal processing of data. Detects and corrects transient faults as single-event upsets (changes in bits due to ionizing radiation) within milliseconds after occuring. Self-testing concept surpasses conventional by actively flushing latent defects out of memory and attempting to correct before accumulating beyond capacity for self-correction or detection. Cost of improvement modest increase in complexity of circuitry and operating time.

Chau, Savio, N.↗
NASA NTRS1988

Thermocouple for heating and cooling of memory metal actuators

A semiconductor thermocouple unit is provided for heating and cooling memory metal actuators. The semiconductor thermocouple unit is mounted adjacent to a memory metal actuator and has a heat sink attached to it. A flexible thermally conductive element extends between the semiconductor thermocouple and the actuator and serves as a heat transfer medium during heating and cooling operations.

Wood, Charles↗
NASA NTRS1989

Thermal Brushes For Memory-Metal Actuators

Thermoelectric elements with wire-brush contacts remove heat from or add heat to memory-metal actuators and thereby enable them to respond faster than previously possible. Memory-metal actuator formed to shape while hot, then to another shape while cold. When cold actuator heated so temperature rises above critical point, snaps from cold shape to hot shape. Upon cooling, actuator returns to cold shape, ready for another cycle. Clearly, faster actuator is heated and cooled, the faster it operates.

Wood, Charles↗
NASA NTRS1989

Memory Switches Based On MnO2-x Thin Films

Thin films of Mn02-x at intersections between metallic row and column conductors serve as switching elements for nonvolatile electronic memories. "On"-state resistance adjustable, and on-to-off transition irreversible. Elements electrically programmable and especially suitable for use in associative electronic memories based on neural-network concepts.

Ramesham, Rajeshuni↗
NASA NTRS1988

Two alternate proofs of Wang's lune formula for sparse distributed memory and an integral approximation

In Kanerva's Sparse Distributed Memory, writing to and reading from the memory are done in relation to spheres in an n-dimensional binary vector space. Thus it is important to know how many points are in the intersection of two spheres in this space. Two proofs are given of Wang's formula for spheres of unequal radii, and an integral approximation for the intersection in this case.

Jaeckel, Louis A.↗
NASA NTRS1989

Computer technologies and institutional memory

NASA programs for manned space flight are in their 27th year. Scientists and engineers who worked continuously on the development of aerospace technology during that period are approaching retirement. The resulting loss to the organization will be considerable. Although this problem is general to the NASA community, the problem was explored in terms of the institutional memory and technical expertise of a single individual in the Man-Systems division. The main domain of the expert was spacecraft lighting, which became the subject area for analysis in these studies. The report starts with an analysis of the cumulative expertise and institutional memory of technical employees of organizations such as NASA. A set of solutions to this problem are examined and found inadequate. Two solutions were investigated at length: hypertext and expert systems. Illustrative examples were provided of hypertext and expert system representation of spacecraft lighting. These computer technologies can be used to ameliorate the problem of the loss of invaluable personnel.

Bell, Christopher↗
NASA NTRS1989

Machine parts recognition using a trinary associative memory

The convergence mechanism of vectors in Hopfield's neural network in relation to recognition of partially known patterns is studied in terms of both inner products and Hamming distance. It has been shown that Hamming distance should not always be used in determining the convergence of vectors. Instead, inner product weighting coefficients play a more dominant role in certain data representations for determining the convergence mechanism. A trinary neuron representation for associative memory is found to be more effective for associative recall. Applications of the trinary associative memory to reconstruct machine part images that are partially missing are demonstrated by means of computer simulation as examples of the usefulness of this approach.

Awwal, Abdul Ahad S.↗
NASA NTRS1990

Execution time supports for adaptive scientific algorithms on distributed memory machines

Optimizations are considered that are required for efficient execution of code segments that consists of loops over distributed data structures. The PARTI (Parallel Automated Runtime Toolkit at ICASE) execution time primitives are designed to carry out these optimizations and can be used to implement a wide range of scientific algorithms on distributed memory machines. These primitives allow the user to control array mappings in a way that gives an appearance of shared memory. Computations can be based on a global index set. Primitives are used to carry out gather and scatter operations on distributed arrays. Communications patterns are derived at runtime, and the appropriate send and receive messages are automatically generated.

Berryman, Harry↗
NASA NTRS1989

Information storage at the molecular level - The design of a molecular shift register memory

The control of electron transfer rates is discussed and a molecular shift register memory at the molecular level is described. The memory elements are made up of molecules which can exist in either an oxidized or reduced state and the bits can be shifted between the cells with photoinduced electron transfer reactions. The device integrates designed molecules onto a VLSI substrate. A control structure to modify the flow of information along a shift register is indicated schematically.

Beratan, David N.↗
NASA NTRS1989

Associative memory - An optimum binary neuron representation

Convergence mechanism of vectors in the Hopfield's neural network is studied in terms of both weights (i.e., inner products) and Hamming distance. It is shown that Hamming distance should not always be used in determining the convergence of vectors. Instead, weights (which in turn depend on the neuron representation) are found to play a more dominant role in the convergence mechanism. Consequently, a new binary neuron representation for associative memory is proposed. With the new neuron representation, the associative memory responds unambiguously to the partial input in retrieving the stored information.

Awwal, A. A.↗
NASA NTRS1991

Fast Magnetoresistive Random-Access Memory

Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand ionizing radiation, high density, and low power. In memory cell, magnetoresistive effect exploited more efficiently by use of ferromagnetic material to store datum and adjacent magnetoresistive material to sense datum for readout. Because relative change in sensed resistance between "zero" and "one" states greater, shorter sampling and readout access times achievable.

Wu, Jiin-Chuan↗
NASA NTRS1991

Stacked-Gate FET's For Analog Memory Elements

Three-terminal, double-stacked-gate field-effect transistor (FET), developed as analog memory element. Particularly suited for use as synapse with variable connection strength in electronic neural network. Provides programmable, nonvolatile resistive connection, somewhat in manner of porous-gate FET described in "Porous-Floating-Gate Field-Effect Transistor" (NPO-17532). Resembles commercial erasable programmable read-only memory (EPROM) device, except for thickness of layers of silicon dioxide electrically isolating gates. Either p-channel or n-channel device.

Thakoor, Anilkumar P.↗
NASA NTRS1991

Lightweight Memory-Metal Pin Puller

Memory-metal pin puller designed for use in aperture-cover mechanism of camera aboard spacecraft adapted to small-volume instrument environments that must be kept free of contamination. Includes memory-metal wires pulling pin when heated. Small and light in weight, uses relatively simple electronic drive circuitry consisting of timed source of current. Adapted to operate at cryogenic temperatures and in vacuum as well as in normal-temperature environment, cycled large number of times without degradation of performance.

Ford, Virginia G.↗
NASA NTRS1991

Trinary Associative Memory Would Recognize Machine Parts

Trinary associative memory combines merits and overcomes major deficiencies of unipolar and bipolar logics by combining them in three-valued logic that reverts to unipolar or bipolar binary selectively, as needed to perform specific tasks. Advantage of associative memory: one obtains access to all parts of it simultaneously on basis of content, rather than address, of data. Consequently, used to exploit fully parallelism and speed of optical computing.

Liu, Hua-Kuang↗
NASA NTRS1991

Magnet/Hall-Effect Random-Access Memory

In proposed magnet/Hall-effect random-access memory (MHRAM), bits of data stored magnetically in Perm-alloy (or equivalent)-film memory elements and read out by using Hall-effect sensors to detect magnetization. Value of each bit represented by polarity of magnetization. Retains data for indefinite time or until data rewritten. Speed of Hall-effect sensors in MHRAM results in readout times of about 100 nanoseconds. Other characteristics include high immunity to ionizing radiation and storage densities of order 10(Sup6)bits/cm(Sup 2) or more.

Wu, Jiin-Chuan↗
NASA NTRS1991

Magnetic Analog Random-Access Memory

Proposed integrated, solid-state, analog random-access memory base on principle of magnetic writing and magnetoresistive reading. Current in writing conductor magnetizes storage layer. Remanent magnetization in storage layer penetrates readout layer and detected by magnetoresistive effect or Hall effect. Memory cells are part of integrated circuit including associated reading and writing transistors. Intended to provide high storage density and rapid access, nonvolatile, consumes little power, and relatively invulnerable to ionizing radiation.

Katti, Romney R.↗
NASA NTRS1990

Distributed memory approaches for robotic neural controllers

The suitability is explored of two varieties of distributed memory neutral networks as trainable controllers for a simulated robotics task. The task requires that two cameras observe an arbitrary target point in space. Coordinates of the target on the camera image planes are passed to a neural controller which must learn to solve the inverse kinematics of a manipulator with one revolute and two prismatic joints. Two new network designs are evaluated. The first, radial basis sparse distributed memory (RBSDM), approximates functional mappings as sums of multivariate gaussians centered around previously learned patterns. The second network types involved variations of Adaptive Vector Quantizers or Self Organizing Maps. In these networks, random N dimensional points are given local connectivities. They are then exposed to training patterns and readjust their locations based on a nearest neighbor rule. Both approaches are tested based on their ability to interpolate manipulator joint coordinates for simulated arm movement while simultaneously performing stereo fusion of the camera data. Comparisons are made with classical k-nearest neighbor pattern recognition techniques.

Jorgensen, Charles C.↗
NASA NTRS1990

Identification of aerospace acoustic sources using sparse distributed associative memory

A pattern recognition system has been developed to classify five different aerospace acoustic sources. In this paper the performance of two new classifiers, an associative memory classifier and a neural network classifier, is compared to the performance of a previously designed system. Sources are classified using features calculated from the time and frequency domain. Each classifier undergoes a training period where it learns to classify sources correctly based on a set of known sources. After training the classifier is tested with unknown sources. Results show that over 96 percent of sources were identified correctly with the new associative memory classifier. The neural network classifier identified over 81 percent of the sources correctly.

Scott, E. A.↗