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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The linearity and reversibility in pressure response suggest that these newly investigated n-GaN/AlxGa(1-x)N/n-GaN devices are promising candidates for high-pressure sensor applications.
Sensors based III-N technology are gaining significant interest due to their potential for monolithic integration of RF transceivers and light sources and the capability of high temperature operations. We are developing a GaN-based micro chemical sensor node for remote detection of chemical toxins, and present electrical responses of AlGaN/GaN HEMT (High Electron Mobility Transistor) sensors to chemical toxins as well as other common gases.
Sensors based on III-N technology are gaining significant interest due to their potential for monolithic integration of RF transceivers and light sources and the capability of high temperature operations. We are developing a GaN-based micro chemical sensor node for remote detection of chemical toxins, and present electrical responses of AlGaN/GaN HEMT (High Electron Mobility Transistor) sensors to chemical toxins as well as other common gases.
The investigation of n-GaN/Al(x)Ga(1-x)N/n-GaN (n-1-n) devices for pressure sensors in extreme planetary environments are presented.
The concept of an all-fiber, IC-based sensor network is presented. Fundamental issues including topology tradeoffs, power budget, and power distribution subsystem are analyzed. Some potential applications of such sensor networks are discussed.