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Results for “test effectiveness”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Accelerated life testing effects on CMOS microcircuit characteristics

The 250 C, 200C and 125C accelerated tests are described. The wear-out distributions from the 250 and 200 C tests were used to estimate the activation energy between the two test temperatures. The duration of the 125 C test was not sufficient to bring the test devices into the wear-out region. It was estimated that, for the most complex of the three devices types, the activation energy between 200 C and 125 C should be at least as high as that between 250 C and 200 C. The practicality of the use of high temperature for the accelerated life tests from the point of view of durability of equipment is assessed. Guidlines for the development of accelerated life-test conditions are proposed. The use of the silicon nitride overcoat to improve the high temperature accelerated life-test characteristics of CMOS microcircuits is described.

Source record↗
NASA NTRS2010

Installation and Characterization of Charged Particle Sources for Space Environmental Effects Testing

Charged particle sources are integral devices used by Marshall Space Flight Center s Environmental Effects Branch (EM50) in order to simulate space environments for accurate testing of materials and systems. By using these sources inside custom vacuum systems, materials can be tested to determine charging and discharging properties as well as resistance to sputter damage. This knowledge can enable scientists and engineers to choose proper materials that will not fail in harsh space environments. This paper combines the steps utilized to build a low energy electron gun (The "Skevington 3000") as well as the methods used to characterize the output of both the Skevington 3000 and a manufactured Xenon ion source. Such characterizations include beam flux, beam uniformity, and beam energy. Both sources were deemed suitable for simulating environments in future testing.

Skevington, Jennifer L.↗
NASA NTRS2020

Single-Event Effect Testing of the Broadcom ACPL-785E Optocoupler

The purpose of this testing was to examine the potential for destructive single event effects (SEE) in Broadcom’s ACPL-785E optocoupler in support of a NASA GSFC flight program. SEE testing was conducted NASA Space Radiation Laboratory (NSRL) at Brookhaven National Laboratory where devices with unmodified packaging were irradiated with high energy ions that have sufficient range to pass through the packaging of the device.

Single Event Effects (SEE)↗
NASA NTRS1996

JPL/NASA/IEEE Test Effectiveness Workshop

(none given)From OBJECTIVES: Specific objectives of the working group are to support the innovation, development, evaluation and implementation of test methods, metrics and tools based on failure engineering/physics and/or root cause evaluations. Data sources systems and tools shall be developed and implemented that: 1) provide improved preventions, controls, analyses and tests (PACT) & field failure data collection, 2) facilities data analysis, archiving, retrieval, failure physics and/or root cause evaluations and 3) enable new and existing technology suitability evaluations to be performed.

effectiveness concurrent engineering metrics test ↗
DOE OSTI2017

Deployment Efficiency and Barrier Effectiveness Testing of a Temporary Anti-Personnel (TAP) Barrier System.

This report documents tests conducted by Sandia National Laboratories (SNL) on behalf of the U.S. Department of State to evaluate a temporary anti-personnel (TAP) barrier system developed by Mitigation Technologies. For this, the SNL Denial and Structural Assessment department developed a test protocol for the evaluation of the TAP barrier system on the basis of deployment efficiency and barrier effectiveness against a riotous/mob attack threat. The test protocol was then executed by SNL personnel and the results of the testing are documented.

45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEF↗
DOE OSTI2024

Testing effective field theory with the most general neutron decay correlations

Built on the seminal works by Jackson-Treiman-Wyld and Ebel-Feldman, we derive the most general free neutron differential decay rate where all massive particles (neutron, proton, and electron) are polarized. This introduces 33 new correlations in addition to the 18 existing ones, which overconstrain the coupling constants in the low-energy effective field theory of charged weak interactions, and thus provides stringent tests of the validity of the theory framework itself. We classify the correlation coefficients in terms of their Standard Model limit and discrete symmetries, and study their expansion with respect to the new physics coupling strengths, supplemented by the experiment-independent 𝒪⁡(𝛼) virtual electromagnetic radiative corrections.

Astronomy & Astrophysics↗
NASA NTRS2022

Single-Event Effects Test Report Texas Instruments, OPA842 Low-Noise Operational Amplifier

Testing was done to characterize the Texas Instruments Operational Amplifiers OPA842 single event effects (SEE) response. The primary SEE concerns for this device are single event latchup (SEL) and single event transients (SETs). Testing focused on determining susceptibility to SEL and characterizing the SET response. Testing occurred on November 11, 2022.

Kaitlyn L Ryder↗
NASA NTRS2021

Single-Event Effect Testing of the ON Semiconductor BSS123 N-Channel Logic Level Enhancement Mode FET and the Vishay Si1013R P-Channel MOSFET

This study was undertaken to determine the single event effect (SEE) susceptibility of two different MOSFET components. Heavy-ion testing was conducted at the Lawrence Berkeley National Laboratory (LBNL) Berkeley Accelerator Space Effects (BASE) Facility 88” Cyclotron. Its purpose was to evaluate these devices as candidates for use on Goddard Modular SmallSat Architecture (GMSA) adapter board for the GTOSat project.

Michael J Campola↗
NASA NTRS2024

Single Event Effects Test Report IXYS IXTA96P085T P-Channel -85V MOSFET

This study was undertaken to determine the destructive single event effect and degradation susceptibility of the IXTA96P085T P-Channel -85V MOSFET from IXYS. The device was monitored for destructive single event effects and degradation during exposure to a heavy ion beam at the Berkeley Accelerator Space Effects (BASE) Facility at the Lawrence Berkeley National Laboratory (LBNL). Gate and drain currents were measured during irradiation and a basic set of electrical characterizations was performed following each fluence exposure to assess heavy ion induced damage. The test date was April 10, 2024. This characterization is application specific.

MOSFET↗
NASA NTRS1974

Aerodynamic results of a support system interference effects test conducted at NASA/LaRC UPWT using an 0.015-scale model of the configuration 140A/B SSV orbiter (0A20B)

An experimental aerodynamic investigation was conducted to determine the interference effects of a wind tunnel support system. The test article was a 0.015 scale model of the space shuttle orbiter. The primary objective of the test was to determine the extent that aerodynamic simulation of the space shuttle orbiter is affected by base mounting the model, without nozzles, on a straight sting. Two support systems were tested. The characteristics of the support systems are described. Data from the tests are presented in the form of graphs and tables.

Campbell, J. H., II↗
NASA NTRS2021

Single-Event Effect Test Report Texas Instruments DS25BR100 LVDS Buffer

This study was to determine the destructive single-event effect (SEE) susceptibility of the DS25BR100 series Low-Voltage Differential Signaling (LVDS) Buffers with Pre-emphasis and Equalization (DS25BR100, 110, and 120). The device was monitored primarily for destructive events while exposing it to a heavy ion beam at the Texas A&M University’s (TAMU) K500 Cyclotron.

Ted Wilcox↗
NASA NTRS2023

Single Event Effect Testing of the SSDI SFF6661 N-Channel Power MOSFET

This irradiation campaign was performed to evaluate the destructive single event effect (SEE) susceptibility of a n-channel power MOSFET from SSDI for space-based instrumentation. Testing was performed at Michigan State University’s (MSU) Facility for Rate Isotope Beams (FRIB) using an LET of 50.5 MeV·cm 2 /mg

Landen D. Ryder↗