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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Studies Of Single-Event-Upset Models

Report presents latest in series of investigations of "soft" bit errors known as single-event upsets (SEU). In this investigation, SEU response of low-power, Schottky-diode-clamped, transistor/transistor-logic (TTL) static random-access memory (RAM) observed during irradiation by Br and O ions in ranges of 100 to 240 and 20 to 100 MeV, respectively. Experimental data complete verification of computer model used to simulate SEU in this circuit.

Zoutendyk, J. A.↗
NASA NTRS1988

Estimating Rates Of Single-Event Upsets

Mathematical model yields estimates of upper and lower bounds on rates of single-event upsets (SEU's) in logic circuits. SEU's are reversible changes in logic states, caused by single high-energy ions. Energetic ions passed through device along tracks perpendicular to surface, to determine parameters of model. Used to estimate rates caused by ions of various energies incident at arbitrary angles. Useful in design of integrated circuits as high-density memories for minimal susceptibility to bit errors.

Zoutendyk, John A.↗
NASA NTRS1988

Empirical Modeling Of Single-Event Upset

Experimental study presents examples of empirical modeling of single-event upset in negatively-doped-source/drain metal-oxide-semiconductor static random-access memory cells. Data supports adoption of simplified worst-case model in which cross sectionof SEU by ion above threshold energy equals area of memory cell.

Zoutendyk, John A.↗
NASA NTRS1988

New Mode For Single-Event Upsets

Report presents theory and experimental data regarding newly discovered mode for single-event upsets, (SEU's) in complementary metal-oxide/semiconductor, static random-access memories, CMOS SRAM's. SEU cross sections larger than those expected from previously known modes given rise to speculation regarding additional mode, and subsequent cross-section measurements appear to confirm speculation.

Zoutendyk, John A.↗
NASA NTRS1989

Trends In Susceptibility To Single-Event Upset

Report provides nearly comprehensive body of data on single-event upsets due to irradiation by heavy ions. Combines new test data and previously published data from governmental and industrial laboratories. Clear trends emerge from data useful in predicting future performances of devices.

Nichols, Donald K.↗
NASA NTRS1989

Effects of cosmic rays on single event upsets

Assistance was provided to the Brookhaven Single Event Upset (SEU) Test Facility. Computer codes were developed for fragmentation and secondary radiation affecting Very Large Scale Integration (VLSI) in space. A computer controlled CV (HP4192) test was developed for Terman analysis. Also developed were high speed parametric tests which are independent of operator judgment and a charge pumping technique for measurement of D(sub it) (E). The X-ray secondary effects, and parametric degradation as a function of dose rate were simulated. The SPICE simulation of static RAMs with various resistor filters was tested.

Venable, D. D.↗
NASA NTRS1988

An exact, closed-form expression of the integral chord-length distribution for the calculation of single-event upsets induced by cosmic rays

This paper presents a derivation of an exact closed-form expression of the integral chord-length distribution for the calculation of single-event upsets (SEUs) in an electronic memory cell, caused by cosmic rays. Results computed for two rectangular parallelepipeds using this exact expression are compared with those computed with Bradford's (1979) semiexact expression of C(x). It is found that the values of C(x) are identical for x equal or smaller than b but are vastly different for x greater than b. Moreover, while C(x) of Bradford gives reasonably accurate values of SEU rate for certain sets of computational parameters, it gives values more than 10 times larger than the correct values for other sets of parameters.

Luke, Keung L.↗
NASA NTRS1990

Forward Bias Inhibits Single-Event Upsets

Bipolar integrated circuits more resistant to ionizing radiation. Tests show resistance of bipolar integrated logic or memory circuit by single-event upsets increased by imparting forward bias to diode constituted by buried layer of substrate and collector.

Zoutendyk, John A.↗
NASA NTRS1990

Anomalies due to single event upsets

The description of single event upsets (SEUs) in the spacecraft Anomalies Handbook is reviewed. The basic mechanism involved in SEUs is summarized and discussed in terms of circuit analysis. Calculation of SEU rate is analytically described and discussed. Departures from single step function dependence in the SEU rate is addressed.

Robinson, P. A., Jr.↗
NASA NTRS1990

Analog-digital simulation of transient-induced logic errors and upset susceptibility of an advanced control system

A simulation study is described which predicts the susceptibility of an advanced control system to electrical transients resulting in logic errors, latched errors, error propagation, and digital upset. The system is based on a custom-designed microprocessor and it incorporates fault-tolerant techniques. The system under test and the method to perform the transient injection experiment are described. Results for 2100 transient injections are analyzed and classified according to charge level, type of error, and location of injection.

Carreno, Victor A.↗
NASA NTRS1991

Heavy-ion induced single-event upset in integrated circuits

The cosmic ray environment in space can affect the operation of Integrated Circuit (IC) devices via the phenomenon of Single Event Upset (SEU). In particular, heavy ions passing through an IC can induce sufficient integrated current (charge) to alter the state of a bistable circuit, for example a memory cell. The SEU effect is studied in great detail in both static and dynamic memory devices, as well as microprocessors fabricated from bipolar, Complementary Metal Oxide Semiconductor (CMOS) and N channel Metal Oxide Semiconductor (NMOS) technologies. Each device/process reflects its individual characteristics (minimum scale geometry/process parameters) via a unique response to the direct ionization of electron hole pairs by heavy ion tracks. A summary of these analytical and experimental SEU investigations is presented.

Zoutendyk, J. A.↗
NASA NTRS1992

Laser Scanner Tests For Single-Event Upsets

Microelectronic advanced laser scanner (MEALS) is opto/electro/mechanical apparatus for nondestructive testing of integrated memory circuits, logic circuits, and other microelectronic devices. Multipurpose diagnostic system used to determine ultrafast time response, leakage, latchup, and electrical overstress. Used to simulate some of effects of heavy ions accelerated to high energies to determine susceptibility of digital device to single-event upsets.

Kim, Quiesup↗
NASA NTRS1992

Single-Event-Upset Laser Scanner With Optical Bias

Light-assisted microelectronic advanced laser scanner (LAMEALS) is augmented version of microelectronic advanced laser scanner (MEALS) described in article, "Laser Scanner Tests For Single-Event Upsets", (NPO-18216). Only major difference, steady illumination from helium/neon laser, argon-ion laser, and/or other source(s) combined with pulsed dye-laser illumination of MEALS into single illuminating beam.

Kim, Quiesup↗
NASA NTRS1991

Method and apparatus for increasing resistance of bipolar buried layer integrated circuit devices to single-event upsets

Bipolar transistors fabricated in separate buried layers of an integrated circuit chip are electrically isolated with a built-in potential barrier established by doping the buried layer with a polarity opposite doping in the chip substrate. To increase the resistance of the bipolar transistors to single-event upsets due to ionized particle radiation, the substrate is biased relative to the buried layer with an external bias voltage selected to offset the built-in potential just enough (typically between about +0.1 to +0.2 volt) to prevent an accumulation of charge in the buried-layer-substrate junction.

Zoutendyk, John A.↗
NASA NTRS1994

Testing For EM Upsets In Aircraft Control Computers

Effects of transient electrical signals evaluated in laboratory tests. Method of evaluating nominally fault-tolerant, aircraft-type digital-computer-based control system devised. Provides for evaluation of susceptibility of system to upset and evaluation of integrity of control when system subjected to transient electrical signals like those induced by electromagnetic (EM) source, in this case lightning. Beyond aerospace applications, fault-tolerant control systems becoming more wide-spread in industry; such as in automobiles. Method supports practical, systematic tests for evaluation of designs of fault-tolerant control systems.

Belcastro, Celeste M.↗
NASA NTRS1993

Modeling and experimental verification of single event upsets

The research performed and the results obtained at the Laboratory for Radiation Studies, Prairie View A&M University and Texas A&I University, on the problem of Single Events Upsets, the various schemes employed to limit them and the effects they have on the reliability and fault tolerance at the systems level, such as robotic systems are reviewed.

Fogarty, T. N.↗
NASA NTRS1997

An Examination of Environment Perturbation Effects on Single Event Upset Rates

This paper presents an analysis of the sensitivity of single event upset (SEU) rate predictions to changes in the direct ionization-inducing environment. An examination based on the nature of the SEU rate equation is presented for the case in which the perturbation is constant across varying particle linear energy transfer (LET). It is shown that the relative variation in SEU rate is equal to the relative perturbation in flux. Results are also presented for the case in which the environment perturbations exist in small LET bins. Through this analysis it is shown that the relative variation in expected SEU rate is equal to that in flux only for the LET regime in which the product of the cross section and differential flux is maximum.

Gates, Michele M.↗
NASA NTRS1999

Effects of Cabin Upsets on Adsorption Columns for Air Revitalization

The National Aeronautics and Space Administration (NASA) utilizes adsorption technology as part of contaminant removal systems designed for long term missions. A variety of trace contaminants can be effectively removed from gas streams by adsorption onto activated carbon. An activated carbon adsorption column meets NASA's requirements of a lightweight and efficient means of controlling trace contaminant levels aboard spacecraft and space stations. The activated carbon bed is part of the Trace Contaminant Control System (TCCS) which is utilized to purify the cabin atmosphere. TCCS designs oversize the adsorption columns to account for irregular fluctuations in cabin atmospheric conditions. Variations in the cabin atmosphere include changes in contaminant concentrations, temperature, and relative humidity. Excessively large deviations from typical conditions can result from unusual crew activity, equipment malfunctions, or even fires. The research carried out under this award focussed in detail on the effects of cabin upsets on the performance of activated carbon adsorption columns. Both experiments and modeling were performed with an emphasis on the roll of a change in relative humidity on adsorption of trace contaminants. A flow through fixed-bed apparatus was constructed at the NASA Ames Research Center, and experiments were performed there by W. Scot Appel under the direction of Dr. John E. Finn. Modeling work was performed at the University of Virginia and at Vanderbilt University by W. Scot Appel under the direction of M. Douglas LeVan. All three participants collaborated in all of the various phases of the research. The most comprehensive document describing the research is the Ph.D. dissertation of W. Scot Appel. Results have been published in several papers and presented in talks at technical conferences. All documents have been transmitted to Dr. John E. Finn.

LeVan, M. Douglas↗