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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2022

Probing Dark Current Random Telegraph Signal in a Small Pitch Vertically Pinned Photodiode CMOS Image Sensor after Proton Irradiation

Dark Current degradation and Dark Current Ran- dom Telegraph Signal after proton irradiation are studied in new scale silicon microvolumes by using a commercial CMOS Image Sensor. Results show that previously reported empirical models describing the Displacement Damage induced degradations are still valid despite the 10 to 100 times smaller depletion volume used. In addition, no evidence of significant Total Ionizing Dose effects is observed. Finally the reduction of the fraction of Random Telegraph Signal (RTS) pixels detected and of the fraction of multi-level RTS pixels is directly linked to the reduction in pixel volume.

CMOS Image Sensor (CIS)↗
NASA NTRS2000

Cleaning up Silicon

A development program that started in 1975 between Union Carbide and JPL, led to Advanced Silicon Materials LLC's, formerly ASiMI, commercial process for producing silane in viable quantities. The process was expanded to include the production of high-purity polysilicon for electronic devices. The technology came out of JPL's Low Cost Silicon Array Project.

Source record↗
NASA NTRS2011

Next Generation X-Ray Optics: High-Resolution, Light-Weight, and Low-Cost

X-ray telescopes are essential to the future of x-ray astronomy. This paper describes a comprehensive program to advance the technology for x-ray telescopes well beyond the state of the art represented by the three currently operating missions: Chandra, XMM-Newton , and Suzaku . This program will address the three key issues in making an x-ray telescope: (I) angular resolution, (2) effective area per unit mass, and (3) cost per unit effective area. The objectives of this technology program are (1) in the near term, to enable Explorer-class x-ray missions and an IXO type mission, and (2) in the long term, to enable a flagship x-ray mission with sub-arcsecond angular resolution and multi-square-meter effective area, at an affordable cost. We pursue two approaches concurrently, emphasizing the first approach in the near term (2-5 years) and the second in the long term (4-10 years). The first approach is precision slumping of borosilicate glass sheets. By design and choice at the outset, this technique makes lightweight and low-cost mirrors. The development program will continue to improve angular resolution, to enable the production of 5-arcsecond x-ray telescopes, to support Explorer-class missions and one or more missions to supersede the original IXO mission. The second approach is precision polishing and light-weighting of single-crystal silicon mirrors. This approach benefits from two recent commercial developments: (1) the inexpensive and abundant availability of large blocks of mono crystalline silicon, and (2) revolutionary advances in deterministic, precision polishing of mirrors. By design and choice at the outset, this technique is capable of producing lightweight mirrors with sub-arcsecond angular resolution. The development program will increase the efficiency and reduce the cost of the polishing and the lightweighting processes, to enable the production of lightweight sub-arcsecond x-ray telescopes. Concurrent with the fabrication of lightweight mirror segments is the continued development and perfection of alignment and integration techniques, for incorporating individual mirror segments into a precision mirror assembly. Recently, we have been developing a technique called edge-bonding, which has achieved an accuracy to enable 10- arcsecond x-ray telescopes. Currently, we are investigating and improving the long-term alignment stability of so-bonded mirrors. Next, we shall refine this process to enable 5-arsecond x-ray telescopes. This technology development program includes all elements to demonstrate progress toward TRL-6: metrology; x-ray performance tests; coupled structural, thermal, and optical performance analysis, and environmental testing.

Zhang, William W.↗
NASA NTRS1994

Three-D Artificial Neural Network (3DANN) technology. Blueprint for the future

Irvine Sensors Corporation (ISC), working closely with JPL under BMDO/ONR sponsorship, is developing a radically new neural computing technology. Primarily aimed at discrimination and target recognition for BMDO missile interceptor applications, it appears to have near term commercial applicability to such problems as handwriting and face recognition, just to name two. In its earliest form it will be able to perform inner product computation using 262 thousand 64x64 templates (weighted synapse arrays) where the 64(exp 5) weights can all be changed every millisecond. Internal switching provides an inherent capability to zoom, translate, or rotate the templates. The 3D silicon architecture is manufactured on a commercial, high volume DRAM production line at very low cost, enabling its commercialization. Two technology thrusts are beginning: in the first, the 64 layer capability of 3DANN-I will be extended to 1024 layers and beyond. In the second layer size will be shrunk to 2-3 millimeters to reduce layer costs. Our workshop goal is to expose this technology to the neural network community as an emerging tool for their use and to obtain their desire for its future development.

Carson, John↗
NASA NTRS1998

Silicon Carbide Mixers Demonstrated to Improve the Interference Immunity of Radio-Based Aircraft Avionics

Concern over the interference of stray radiofrequency (RF) emissions with key aircraft avionics is evident during takeoff and landing of every commercial flight when the flight attendant requests that all portable electronics be switched off. The operation of key radio-based avionics (such as glide-slope and localizer approach instruments) depends on the ability of front-end RF receivers to detect and amplify desired information signals while rejecting interference from undesired RF sources both inside and outside the aircraft. Incidents where key navigation and approach avionics malfunction because of RF interference clearly represent an increasing threat to flight safety as the radio spectrum becomes more crowded. In an initial feasibility experiment, the U.S. Army Research Laboratory and the NASA Lewis Research Center recently demonstrated the strategic use of silicon carbide (SiC) semiconductor components to significantly reduce the susceptibility of an RF receiver circuit to undesired RF interference. A pair of silicon carbide mixer diodes successfully reduced RF interference (intermodulation distortion) in a prototype receiver circuit by a factor of 10 (20 dB) in comparison to a pair of commercial silicon-based mixer diodes.

Neudeck, Philip G.↗
NASA NTRS2008

Development of a Silicon Carbide Molecular Beam Nozzle for Simulation Planetary Flybys and Low-Earth Orbit

From commercial origins as a molybdenum molecular beam nozzle, a ceramic nozzle of silicon carbide (SiC) was developed for space environment simulation. The nozzle is mechanically stable under extreme conditions of temperature and pressure. A heated, continuous, supersonically-expanded hydrogen beam with a 1% argon seed produced an argon beam component of nearly 4 km/s, with an argon flux exceeding 1x1014 /cm2.s. This nozzle was part of a molecular beam machine used in the Atmospheric Experiments Branch at NASA Goddard Space Flight Center to characterize the performance of the University of Texas at Dallas Ram Wind Sensor (RWS) aboard the Air Force Communications/Navigation Outage Forecasting System (C/NOFS) launched in the Spring of 2008.

Patrick, E. L.↗
NASA NTRS1996

Mixed composition materials suitable for vacuum web sputter coating

Ion beam sputter deposition techniques were used to investigate simultaneous sputter etching of two component targets so as to produce mixed composition films. Although sputter deposition has been largely confined to metals and metal oxides, at least one polymeric material, poly-tetra-fluorethylene, has been demonstrated to produce sputtered fragments which repolymerize upon deposition to produce a highly cross-linked fluoropolymer resembling that of the parent target Fluoropolymer-filled silicon dioxide and fluoropolymer-filled aluminum oxide coatings have been deposited by means of ion beam sputter coat deposition resulting in films having material properties suitable for aerospace and commercial applications. The addition of fluoropolymer to silicon dioxide films was found to increase the hydrophobicity of the resulting mixed films; however, adding fluoropolymer to aluminum oxide films resulted in a reduction in hydrophobicity, thought to be caused by aluminum fluoride formation.

Banks, Bruce A.↗
NASA NTRS1997

A Novel Silicon Micromachined Integrated MCM Thermal Management System

"Micromachining" is a chemical means of etching three-dimensional structures, typically in single- crystalline silicon. These techniques are leading toward what is coming to be referred to as MEMS (Micro Electro Mechanical Systems), where in addition to the ordinary two-dimensional (planar) microelectronics, it is possible to build three-dimensional n-ticromotors, electrically- actuated raicrovalves, hydraulic systems and much more on the same microchip. These techniques become possible because of differential etching rates of various crystallographic planes and materials used for semiconductor n-ticrofabfication. The University of Cincinnati group in collaboration with Karl Baker at NASA Lewis were the first to form micro heat pipes in silicon by the above techniques. Current work now in progress using MEMS technology is now directed towards the development of the next generation in MCM (Multi Chip Module) packaging. Here we propose to develop a complete electronic thermal management system which will allow densifica6on in chip stacking by perhaps two orders of magnitude. Furthermore the proposed technique will allow ordinary conu-nercial integrated chips to be utilized. Basically, the new technique involves etching square holes into a silicon substrate and then inserting and bonding commercially available integrated chips into these holes. For example, over a 100 1/4 in. by 1 /4 in. integrated chips can be placed on a 4 in. by 4 in. silicon substrate to form a Multi-Chip Module (MCM). Placing these MCM's in-line within an integrated rack then allows for three-diniensional stacking. Increased miniaturization of microelectronic circuits will lead to very high local heat fluxes. A high performance thermal management system will be specifically designed to remove the generated energy. More specifically, a compact heat exchanger with milli / microchannels will be developed and tested to remove the heat through the back side of this MCM assembly for moderate and high heat flux applications, respectively. The high heat load application of particular interest in mind is the motor controller developed by Martin Marietta for Nasa to control the thruster's directional actuators on space vechicles. Work is also proposed to develop highly advanced and improved porous wick structures for use in advanced heat loops. The porous wick will be micromachined from silicon using MEMS technology, thus permitting far superior control of pore size and pore distribution (over wicks made from sintered n-ietals), which in turn is expected to led to significantly improved heat loop performance.

Kazmierczak, M. J.↗
NASA NTRS1978

Development of a process for high capacity-arc heater production of silicon

The realization of low cost, electric power from large-area silicon, photovoltaic arrays will depend on the development of new methods for large capacity production of solar grade (SG) silicon with a cost of less than $10 per kilogram by 1986 (established Department of Energy goal). The objective of the program is to develop a method to produce SG silicon in large quantities based on the high temperature-sodium reduction of silicon tetrachloride (SiCl4) to yield molten silicon and the coproduct salt vapor (NaCl). Commercial ac electric arc heaters will be utilized to provide a hyper-heated mixture of argon and hydrogen which will furnish the required process energy. The reactor is designed for a nominal silicon flow rate of 45 kg/hr. Analyses and designs have been conducted to evaluate the process and complete the initial design of the experimental verification unit.

Reed, W. H.↗
NASA NTRS1979

Combustion rig durability testing of turbine ceramics

A test facility for cyclic exposure of ceramic test bars to 1370 C has been designed as a means of the evaluation of the material durability under high-temperature cycling, particularly in heat-engine applications. The principal features of the test rig and test procedures are briefly discussed, and test results are presented for several commercial ceramics, including hot-pressed silicon nitride, carborundum sintered alpha-SiC, siliconized SiC, and reaction-bonded silicon nitride.

Carruthers, W. D.↗
NASA NTRS1981

Applications of a new mass-driver concept

A description of the operating principles and requirements of a novel mass-driver concept is presented. The design obtains acceleration of payload bucket coils by means of transverse focussing from strong, off-axis restoring forces that are produced by drive coils operating in a 'pull-only' mode. The concept offers the unprecedented possibility of operating high-performance mass-drivers entirely within the limitations of existing commercial switching devices, such as silicon-controlled rectifiers, spark gaps, vacuum-triggered arcs or vacuum mechanical switches. Representative applications of the concept described are: (1) a large-diameter magnetic lunar launcher for payloads having autonomous maneuvering; (2) an intermediate-diameter launcher with long operational life; and (3) a reaction engine for orbit transfer of large, massive objects.

Oneill, G. K.↗
NASA NTRS2008

Light Collimator and Monitor for a Spectroradiometer

A system that comprises optical and electronic subsystems has been developed as an infrastructure for a spectroradiometer that measures time-dependent spectral radiance of the daylight sky, in a narrow field of view (having angular width of the order of 1 ) centered on the zenith, in several spectral bands in the wavelength range from 0.3 to 2.2 m. This system is used in conjunction with two commercially available monolithic spectrometers: a silicon-based one for wavelengths from 0.3 to 1.1 m and a gallium arsenide-based one for wavelengths from 1.05 to 2.2 m (see figure). The role of this system is to collect the light from the affected region of the sky, collimate the light, deliver the collimated light to the monolithic spectrometers, and process the electronic outputs of the spectrometers

Gore, Warren↗
NASA NTRS2016

500 C Electronic Packaging and Dielectric Materials for High Temperature Applications

High-temperature environment operable sensors and electronics are required for exploring the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high temperature electronics, and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by these high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed. High-temperature environment operable sensors and electronics are required for probing the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and eventual applications of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high electronics and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed.

dielectric performance↗
NASA NTRS1994

Delta-Doped CCDs for Enhanced UV Performance

Thin, backside-illuminated CCds are modified by growing a delta-doped silicon layer on the back surface using molecular beam epitaxy. Delta-doped CCDs exhibit stable and uniform 100 percent internal quantum efficiency. The process consists of growth of an epitaxial silicon layer on a fully-processed commercial CCd die in which 30 percent of a monolayer of boron atoms are incorporated into the lattice nominally in a single atomic layer. Long term stability was tested and showed no degradation of the device quantum efficiency over sixteen months.

silicon↗
NASA NTRS1979

Solar silicon via the Dow Corning process

Technical feasibility for high volume production of solar cell-grade silicon is investigated. The process consists of producing silicon from pure raw materials via the carbothermic reduction of quartz. This silicon was then purified to solar grade by impurity segregation during Czochralski crystal growth. Commercially available raw materials were used to produce 100 kg quantities of silicon during 60 hour periods in a direct arc reactor. This silicon produced single crystalline ingot, during a second Czochralski pull, that was fabricated into solar cells having efficiencies ranging from 8.2 percent to greater than 14 percent. An energy analysis of the entire process indicated a 5 month payback time.

Hunt, L. P.↗
NASA NTRS1981

Evaluation and verification of epitaxial process sequence for silicon solar-cell production

To achieve the program goals, 28 minimodules were fabricated and tested, using 600 cells made from three-inch-diameter wafers processed by the sequence chosen for this purpose. Of these 600 cells, half were made from epitaxially grown layers on potentially low-cost substrates. The other half were made from commercial semiconductor-grade (SG), single-crystal silicon wafers that served as controls. Cell processing was normally performed on mixed lots containing significant numbers of each of these two types of wafers. After evaluation of the performance of all cells, they were separated by types for incorporation into modules that were to be tested for electrical performance and response to environmental stress. A simplified flow chart displaying this scheme, for quantities representing half of the planned total to be processed, is presented.

Redfield, D.↗
NASA NTRS1977

Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process, task 2, LSSA project

Silicon sessile drop experiments were performed on a variety of commercially available refractory carbides, nitrides, oxides, and borides to examine the potential of these materials for applications involving either direct contact with molten silicon or as substrates for CVD coatings in the fabrication of dies and crucibles for containing molten silicon. Simultaneous experiments were also conducted with CVD layers of SiC, Si3N4, and SiOxNy. Silicon nitride layers, deposited with NH3:SiH4 ratios ranging from 100:1 down to 5:1, were examined in sessile drop experiments to determine if the layers are degraded as a result of using lower reagent ratios. Preliminary experiments were undertaken on the stability of CVD Si3N4 near the melting point of silicon. Silicon ribbon segments were grown from vitreous carbon dies which had been coated with CVD Si3N4. Depending upon the purity of the die materials, ribbon resistivity values up to 40 Omega cm were obtained.

Duffy, M. T.↗