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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7

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NASA NTRS1986

Room-Temperature Deposition of NbN Superconducting Films

Films with high superconducting transition temperatures deposited by reactive magnetron sputtering. Since deposition process does not involve significantly high substrate temperatures, employed to deposit counter electrode in superconductor/insulator/superconductor junction without causing any thermal or mechanical degradation of underlying delicate tunneling barrier. Substrates for room-temperature deposition of NbN polymeric or coated with photoresist, making films accessible to conventional lithographic patterning techniques. Further refinements in deposition technique yield films with smaller transition widths, Tc of which might approach predicted value of 18 K.

Thakoor, S.↗

NASA NTRS1986

Multifunction Vacuum Chamber for IC Metallization

Vacuum system chamber processing multilayer metallization on integrated circuits (IC's) performs four operations ordinarily done in separated equipment. Chamber etches holes, removes photoresist, cleans by sputter etching, and deposits final layer of metal. Combinedfunction chamber costs less than separate equipment. Chamber avoids exposing integrated circuits to room air and, to oxidation and dust, between steps. Eliminates time spent in transferring circuits from one apparatus to next.

Routh, D. E.↗

NASA NTRS1987

Optical emission from coupled surface plasmons

Surface plasmons on opposite sides of a thin metal film surrounded by identical dielectrics interact to form coupled surface plasmons (CSP's). Corrugation of the metal film permits interaction of the CSP's with the radiation field. This paper reports the observation of optical emission from CSP's excited by the near-field coupling of molecules adjacent to a corrugated thin metal film embedded in photoresist.

Gruhlke, R. W.↗

NASA NTRS1987

Luminal surface fabrication for cardiovascular prostheses

Methodology used for the production of highly ordered surfaces on polytetrafluoroethylene (PTFE) Teflon, for use of this material as a surface layer in small-diameter vascular prostheses, is described. Directed argon-ion beam sputter etching is used to produce highly ordered specific surface morphologies, and photolithographic techniques are used for pattern definition. The methodology also includes surface polishing of the samples, sputter deposition of the intermediary layer of gold to enhance photoresist adhesion and improve pattern resolution, and rotating of the sample to minimize the effects of ion-beam nonuniformity and asymmetry. Use of these techniques resulted in the formation of regular arrays of sharply defined hexagonal pillars with smooth vertical walls and large relief.

Deininger, William D.↗

NASA NTRS1988

Single-Layer, Multicolor Electroluminescent Phosphors

Etching eliminated in producing phosphor layers for displays. New process enables production of single-layer, two-color phosphor layer without etching. Method of construction, beginning with glass substrate with electrode and insulator layers, involves deposition of green phosphor masking with metal mask or photoresist; diffusion or ion implantation of manganese through mask to produce red phosphor and removal of mask.

Robertson, James B.↗

NASA NTRS1987

Integrated photo-responsive metal oxide semiconductor circuit

An infrared photoresponsive element (RD) is monolithically integrated into a source follower circuit of a metal oxide semiconductor device by depositing a layer of a lead chalcogenide as a photoresistive element forming an ohmic bridge between two metallization strips serving as electrodes of the circuit. Voltage from the circuit varies in response to illumination of the layer by infrared radiation.

Jhabvala, Murzban D.↗

NASA NTRS1989

Low-Dielectric Polyimides

New process developed to produce aromatic condensation polyimide films and coatings having dielectric constants in range of 2.4 to 3.2. Materials better electrical insulators than state-of-the-art commercial polyimides. Several low-dielectric-constant polyimides have excellent resistance to moisture. Useful as film and coating materials for both industrial and aerospace applications where high electrical insulation, resistance to moisture, mechanical strength, and thermal stability required. Applicable to production of high-temperature and moisture-resistance adhesives, films, photoresists, and coatings. Electronic applications include printed-circuit boards, both of composite and flexible-film types and potential use in automotive, aerospace, and electronic industries.

St. Clair, Anne K.↗

NASA NTRS1989

Process For Patterning Dispenser-Cathode Surfaces

Several microfabrication techniques combined into process cutting slots 100 micrometer long and 1 to 5 micrometer wide into tungsten dispenser cathodes for traveling-wave tubes. Patterned photoresist serves as mask for etching underlying aluminum. Chemically-assisted ion-beam etching with chlorine removes exposed parts of aluminum layer. Etching with fluorine or chlorine trifluoride removes tungsten not masked by aluminum layer. Slots enable more-uniform low-work function coating dispensed to electron-emitting surface. Emission of electrons therefore becomes more uniform over cathode surface.

Garner, Charles E.↗

NASA NTRS1986

Photoelectrochemical fabrication of spectroscopic diffraction gratings

Photoelectrochemical etching was demonstrated as a means of fabricating a variety of periodic structures in semiconductors. The semiconductor is used as an electrode in an electrochemical cell, and is in contact with a liquid electrolyte. When the crystal is held at a positive voltage and illuminated, etching occurs in only the illuminated regions to a depth proportional to the illumination intensity and exposure time. In Phase 1, it was determined that diffraction gratings could be produced in gallium arsenide crystals by this method, using either a scanned focused laser beam or by uniform illumination of a ruling mask defined in metal or photoresist on the crystal surface. The latter approach was determined to produce V-grooves if the mask is oriented along certain crystallographic directions. These V-grooves were produced with an exceedingly smooth crystal morphology due to the highly controllable nature of the process and the mild electrolytes involved. The results form the basis for photoelectrochemical fabrication of deep, low pitch Eschelle gratings for use in high orders in NASA spectrographic instrumentation such as the Space Telescope Imaging Spectrograph.

Rauh, R. David↗

NASA NTRS1989

The effects of ion gun beam voltage on the electrical characteristics of NbCN/PbBi edge junctions

The authors have succeeded in fabricating high-quality submicron NbCN edge junctions using a technique which is commonly used to make Nb edge junctions. A modified commercial ion gun was used to cut an edge in SiO2/NbCN films partially covered with photoresist. An insulating barrier was then formed on the exposed edge by reactive ion beam oxidation, and a counterelectrode of PbBi was deposited. The electrical quality of the resulting junctions was found to be strongly influenced by the ion beam acceleration voltages used to cut the edge and to oxidize it. For low ion beam voltages, the junction quality parameter was as high as Vm = 55 mV (measured at 3 mV), but higher ion beam voltages yielded strikingly poorer quality junctions. In light of the small coherence length of NbN, the dependence of the electrical characteristics on ion beam voltage is presumably due to mechanical damage of the NbCN surface. In contrast, for similar ion beam voltages, no such dependence was found for Nb edge junctions.

Lichtenberger, A. W.↗

NASA NTRS1989

The 3F condensation polyimides: Review and update

Nine new condensation polyimides containing the phenyltrifluoroethylidene (3F) linkage were synthesized by the amic-acid route. Several other polyimides, including some with hexafluoroisopropylidene (6F) linkage, were also prepared as controls. Amic-acid solutions were characterized by determining their inherent viscosities prior to thermal conversion into polyimide films. Glass transition temperatures (T sub g), thermogravimetric analysis (TGA), and isothermal weight loss data (at 316, 371, and 371 C under 0.5 MPa air pressure) were obtained for the films. The films were pulverized into molding powders which, in turn, were thermally processed under pressure into neat resin disks. The disks were also characterized by T sub g's and 316 and 371 C isothermal weight losses. The film study identified two new polyimides with T sub g's greater than 371 C and two new polyimides with low rates of weight loss. The resin disks exhibited the same overall trends in T sub g and weight loss as the respective films, however the weight loss per unit surface area was always greater, presumably due to molecular degradation induced during preparation of the molding powders. The overall results indicate that polyimides containing the 3F linkage have T sub g's and thermo-oxidative stability comparable to polyimides containing the 6F group. Alternate technology was also shown by the synthesis of two new polyalkyl substituted 3F diamines and five more new 3F polymers. Their potential as photoresists was demonstrated by T sub g advancement after ultraviolet exposure. Last, four U.S. patents on 3F monomers and polymers were issued and up to eight more are pending.

Alston, William B.↗

NASA NTRS1989

Growth and patterning of laser ablated superconducting YBa2Cu3O7 films on LaAlO3 substrates

A high quality superconducting film on a substrate with a low dielectric constant is desired for passive microwave circuit applications. In addition, it is essential that the patterning process does not effect the superconducting properties of the thin films to achieve the highest circuit operating temperatures. YBa2Cu3O7 superconducting films were grown on lanthanum aluminate substrates using laser ablation with resulting maximum transition temperature (T sub c) of 90 K. The films were grown on a LaAlO3 which was at 775 C and in 170 mtorr of oxygen and slowly cooled to room temperature in 1 atm of oxygen. These films were then processed using photolithography and a negative photoresist with an etch solution of bromine and ethanol. Results are presented on the effect of the processing on T(sub c) of the film and the microwave properties of the patterned films.

Warner, J. D.↗

NASA NTRS1989

Effect of crystal orientation on anisotropic etching and MOCVD growth of grooves on GaAs

Grooves can be formed on GaAs by wet-chemical anisotropic etching of surfaces masked by photoresist stripes. The effect of crystal orientation on the shape of the grooves etched and on subsequent epitaxial growth by MOCVD is presented. The polar lattice increases the complexity of the etching and growth processes. The slow-etch planes defined by anisotropic etching are not always the same as the growth facets produced during MOCVD deposition, especially for deposition on higher order planes.

Bailey, Sheila G.↗

NASA NTRS1991

Grooved surfaces on InP

Formation of a textured or grooved front surface on a solar cell can increase the efficiency in several ways, including enhanced absorption and light trapping. In III-IV materials the (111) plane is chemically different form the (1'1'1') plane, and both etching and epitaxial deposition behave differently on these surfaces. The current state of profile etching in InP is summarized. Data are presented on novel geometries attainable as a function of etchant temperature and composition, substrate orientation and carrier concentration, and the oxide thickness between the substrate and the photoresist. Depending on dopant concentration, the same etchant can produce either anisotropic or isotropic grooves. V-grooved solar cells were manufactured on InP, and the improved optical absorption was demonstrated. Preferred parameters for various applications are listed and discussed.

Bailey, Sheila G.↗

NASA NTRS1991

Enhancing optical absorption in InP and GaAs utilizing profile etching

The current state of profile etching in GaAs and InP is summarized, including data on novel geometries attainable as a function of etchant temperature, composition, and rate; substrate orientation; carrier concentration; and oxide thickness between substrate and photoresist. V-grooved solar cells were manufactured with both GaAs and InP, and the improved optical absorption was demonstrated. Preferred parameters for various applications are listed and discussed.

Bailey, Sheila G.↗

NASA NTRS1990

Development of advanced silicon solar cells for Space Station Freedom

This report describes the development of large area high efficiency wrapthrough solar cells for Space Station Freedom. The goal of this contract was the development and fabrication of 8 x 8 cm coplanar back contact solar cells with a minimum output of 1.039 watts/cell. The first task in this program was a modeling study to determine the optimum configuration of the cell and to study the effects of surface passivation, substrate resistivity, and back surface field on the BOL and EOL performance. In addition, the optical stack, including the cell cover, AR coatings, and Kapton blanket, was modeled to optimize 'on orbit' operation. The second phase was a manufacturing development phase to develop high volume manufacturing processes for the reliable production of low recombination velocity boron back surface fields, techniques to produce smooth, low leakage wrapthrough holes, passivation, photoresist application methods, and metallization schemes. The final portion of this program was a pilot production phase. Seven hundred solar cells were delivered in this phase. At the end of the program, cells with average efficiencies over 13 percent were being produced with power output in excess of 1.139 watts/cell, thus substantially exceeding the program goal.

Lillington, David R.↗

NASA NTRS1991

Enhancing optical absorption in InP and GaAs utilizing profile etching

The current state of profile etching in GaAs and InP is summarized, including data on novel geometries attainable as a function of etchant temperature, composition, and rate; substrate orientation; carrier concentration; and oxide thickness between substrate and photoresist. V-grooved solar cells have been manufactured with both GaAs and InP, and the improved optical absorption demonstrated. Preferred parameters for various applications are listed and discussed.

Bailey, Sheila G.↗

NASA NTRS1993

Electrochemical patterning of amorphous carbon on diamond

The ability to pattern ion-implantation damaged or other nondiamond carbon on a diamond substrate is useful for fabricating a variety of devices. We accomplished such patterning by an unmasked implantation into a diamond substrate followed by photolithography and a selective electrochemical etch. The use of a high resistivity medium coupled with applied biases over 50 V permitted etching without requiring contact between the substrate and an electrode. Many electrolytes gave etches that exhibit high selectivity for nondiamond carbon over both diamond and dielectrics such as photoresist. Optical, electrical, and Raman spectroscopic measurements elucidate the effects of the etch on the implanted diamond surface.

Marchywka, Mike↗