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Results for “AlGaAs”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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12 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

In this work, we demonstrate hydride vapor phase epitaxy (HVPE) of Al x Ga 1-x As, Al x In 1-x P, and Al x Ga y In 1-x-y P using an AlCl 3 precursor. We study the growth of the Al x Ga 1-x As alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl 3 . Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of Al x Ga 1-x As, and for the first time by HVPE, Al x In 1-x P and Al x Ga y In 1-x-y P. Finally, these results create exciting implications for HVPE-grown high-efficiency III-V solar cells and devices with reduced cost.

14 SOLAR ENERGY↗
DOE OSTI2021

Graded Buffer Bragg Reflectors with High Reflectivity and Transparency for Metamorphic Optoelectronics

A graded buffer Bragg reflector (GBBR) is a bifunctional device component that provides the reflection of a distributed Bragg reflector and the adjustable lattice constant of a compositionally graded buffer. Prior work showed that these properties can be combined with low threading dislocation density and high reflectivity. Here, we design and demonstrate complex GBBRs for specific metamorphic solar cell applications. We design buffers that provide (1) high reflectivity over a narrow bandwidth, for quantum well solar cells, (2) reflectivity over a wide bandwidth, for optically thin solar cells, and (3) low sidelobe reflection, for multijunction devices that demand low out-of-band reflection. Apodized and triple GBBRs are demonstrated, and transparency is always considered, requiring designs with carefully engineered material combinations. A GBBR with a reflection of 99% is demonstrated, as well as a triple GBBR that has over 80% reflection for 100?nm of the spectrum around 800?nm. We also analyze potential deviations in a baseline GBBR from that of a perfect DBR using transmission electron microscopy to analyze imperfections in the material and modeling to analyze the impact of imperfect refractive index data for lattice-mismatched AlGaInAs. Minimal crosshatch roughness and unintentional thickness variation occur throughout the buffer, which likely influences reflection slightly. Small deviations between the calculated AlGaInAs and utilized AlGaAs refractive index exist, giving methods for future GBBR improvement. While the GBBR designs are intended for metamorphic solar cells, the broad and high reflection may also be useful for other optoelectronic devices such as light-emitting diodes or lasers.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2024

Design and Performance of an InAs Quantum Dot Scintillator with Integrated Photodetector

A new scintillation material composed of InAs quantum dots (QDs) hosted within a GaAs matrix was developed, and its performance with different types of radiation is evaluated. A methodology for designing an integrated photodetector (PD) with a low defect density and that is optically matched to the QD’s emission spectrum is introduced, utilizing an engineered epitaxial InAlGaAs metamorphic buffer layer. The photoluminescence (PL) collection efficiency of the integrated PD is examined using two-dimensional scanning laser excitation. The detector response to 5.5 MeV α-particles and 122 keV photons is presented. Yields of 13 electrons/keV for α-particles and 30–60 electrons/keV for photons were observed. The energy resolution of 12% observed with α-particles was mainly limited by noise- and geometry-related optical losses. The radiation hardness of an InAs QDs hosted within GaAs and a wider band gap AlGaAs ternary alloy was studied under a 1 MeV proton implantation up to a 10 14 cm –2 dose. The integrated PL responses were compared to evaluate PL quenching due to non-radiative defects. The QDs embedded in the AlGaAs demonstrated improved radiation hardness compared to QDs in the GaAs matrix and in the InGaAs quantum wells.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Tunnel junctions for multijunction solar cells

Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.

Jain, Nikhil↗
DOE OSTI2021

Demonstration of Passivation Using a Low-Temperature-Grown, Al-Containing Window Layer by HVPE

We present hydride vapor phase epitaxy (HVPE) growth of single junction GaAs solar cells with Al0.4Ga0.6As front passivation layers at a growth temperature of 650°C. Devices achieved a short circuit current density of ~27.52 mA/cm2 after anti-reflection coating, similar to devices that used GaInP windows with the same bandgap, indicating that AlGaAs provides front-surface passivation resulting in a low interface recombination velocity. The low temperature growth of Al containing III-V materials by HVPE allows for compatibility with In-containing alloys in high-efficiency III-V device structures for various applications.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2022

Remote Epitaxy of III-V Solar Cells via Hydride Vapor Phase Epitaxy

The promise of remote epitaxy, in which epitaxial registry of a film can still be maintained through two-dimensional layers, has emerged from an advanced understanding of the interactions between two dimensional materials and bulk semiconductors. A promising application of this technology is to facilitate substrate reuse in epitaxial III-V systems, which could significantly reduce material cost and improve commercial viability of this high-efficiency photovoltaic technology. In this process the weak van der Waal bonds between the 2D layer and the III-V substrate make separation of epitaxially-grown layers simple and leaves a smooth substrate that can be reused for cost reduction. Here we present a study of growth parameters of GaAs on AlGaAs through a low dimensional carbon interlayer via hydride vapor phase epitaxy (HVPE). We Investigate the effect of various GaAs nucleation conditions such as V/III ratio, temperature and growth rate on film roughness, crystallinity, and degree of epitaxial alignment. We demonstrate growth of single crystal GaAs layer on top of the low dimensional carbon that follow the crystal orientation of the substrate. Surface roughness measured via AFM found that lower V/III ratios result in smoother III-V films grown on the low dimensional carbon, with a lowest RMS of ~60 nm obtained at a V/III ratio of 5. Growth temperatures are optimized at 650 C, as temperatures below 550 C show non-crystalline growth and higher temperature samples display very rough surfaces. Additionally, we investigate HVPE growth on various forms of low-dimensional carbon including transferred graphene, CVD-grown graphene, and MOCVD-growth amorphous carbon and find the latter to be most well suited for III-V growth as this method results in cleaner interface and potential for direct, large-area coverage. We also identify techniques to mitigate surface degradation in carbon layers as a function of both exposure time and growth environment by analyzing surface changes via x-ray reflectivity. We show growth of heteroepitaxial III-V solar cells on carbon interlayers and preliminary cell results, which are currently limited to 4% efficiency under one sun.

AlGaAs↗
DOE OSTI2024

Dynamic gain and frequency comb formation in exceptional-point lasers

Abstract Exceptional points (EPs)—singularities in the parameter space of non-Hermitian systems where two nearby eigenmodes coalesce—feature unique properties with applications such as sensitivity enhancement and chiral emission. Existing realizations of EP lasers operate with static populations in the gain medium. By analyzing the full-wave Maxwell–Bloch equations, here we show that in a laser operating sufficiently close to an EP, the nonlinear gain will spontaneously induce a multi-spectral multi-modal instability above a pump threshold, which initiates an oscillating population inversion and generates a frequency comb. The efficiency of comb generation is enhanced by both the spectral degeneracy and the spatial coalescence of modes near an EP. Such an “EP comb” has a widely tunable repetition rate, self-starts without external modulators or a continuous-wave pump, and can be realized with an ultra-compact footprint. We develop an exact solution of the Maxwell–Bloch equations with an oscillating inversion, describing all spatiotemporal properties of the EP comb as a limit cycle. We numerically illustrate this phenomenon in a 5-μm-long gain-loss coupled AlGaAs cavity and adjust the EP comb repetition rate from 20 to 27 GHz. This work provides a rigorous spatiotemporal description of the rich laser behaviors that arise from the interplay between the non-Hermiticity, nonlinearity, and dynamics of a gain medium.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Efficient single-photon emission via quantum-confined charge funneling to quantum dots

Quantum light sources, particularly single-photon emitters (SPEs), are critical for quantum communications and computing. Among them, III-V semiconductor quantum dots (QDs) have demonstrated superior SPE metrics, including near-unity brightness, high photon purity, and indistinguishability, making them especially suitable for quantum applications. However, their overall quantum efficiency—determined by a product of the internal, excitation, and outcoupling efficiencies—remains limited, primarily due to low (typically below 0.1%) excitation efficiency. To mitigate the low efficiency under non-resonant pumping, here we realize liquid droplet etched GaAs QDs in a microscale 3D AlGaAs charge-carrier funnel. The funnel channels charge carriers to the QD and enhances the overall emission efficiency by over one order of magnitude while preserving the SPE behavior. We reveal that a modified energy landscape around the QD leads to the excitation efficiency improvement. These energy landscape-modified QDs can be operated with optical excitation up to 10 μm away, raising the promise of efficient electrically driven QD SPEs for quantum information systems.

Park, Sanghyeok [Sandia National Laboratories (SNL↗
DOE OSTI2022

Record-quality GaAs two-dimensional hole systems

The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport phenomena. Here we report ultra-high-quality (001) GaAs 2D hole systems, fabricated using molecular beam epitaxy and modulation doping, with mobility values as high as 5.8 × 10 6 cm 2 /(V s) at a hole density of p = 1.3 × 10 11 /cm 2 , implying a mean free path of ≃ 27 μm. In the low-temperature magnetoresistance trace of this sample, we observe high-order fractional quantum Hall states up to the Landau level filling ν = 12/25 near ν = 1/2. Furthermore, we see a deep minimum develop at ν = 1/5 in the magnetoresistance of a sample with a much lower hole density of p = 4.0 × 10 10 /cm 2 where we measure a mobility of 3.6 × 10 6 cm2/(V s). Finally, these improvements in sample quality were achieved by the reduction of residual impurities both in the GaAs channel and in the AlGaAs barrier material, as well as optimization in the design of the sample structure.

2-dimensional systems↗
DOE OSTI2022

Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells

Motivated by recent breakthroughs in molecular beam epitaxy of GaAs/AlGaAs quantum wells, we examine contributions to mobility and quantum mobility from various scattering mechanisms and their dependencies on the electron density. Here we find that at lower electron densities, n e ≲ 1 x 10 11 cm -2 , both transport and quantum mobility are limited by unintentional background impurities and follow a power-law dependence, ∝ n$^{α}_{e}$, with α ≈ 0.85. Our predictions for quantum mobility are in reasonable agreement with an estimate obtained from the resistivity at filling factor ν = 1/2 in a sample of Y. J. Chung et al. with n e = 1 x 10 11 cm -2 . Consideration of other scattering mechanisms indicates that interface roughness (remote donors) is likely a limiting factor of transport (quantum) mobility at higher electron densities. Future measurements of quantum mobility should yield information on the distribution of background impurities in GaAs and AlGaAs.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Epitaxial Growth Development: CRADA Final Report

The purpose of this CRADA is to assist Trumpf Photonics in developing a procedure to grow ZnSe epilayers on the (110) facets of AlGaAs/InGaAs laser diodes that will provide high degrees of electronic passivation and performance reliability. Work will be divided into four tasks: 1) characterization of material growth at Trumpf Photonics, 2) development of a highly effective AlGaAs facet cleaning procedure at NREL, 3) development of a ZnSe epitaxy procedure at NREL, and 4) transfer of the procedures developed at NREL to the Trumpf Photonics site. This CRADA is designed to last 3 years total.

36 MATERIALS SCIENCE↗