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NASA Electronic Parts and Packaging (NEPP) Program, Discussion of Highly Accelerated Life Testing (HALT) of Capacitors
Highly Accelerated Life Testing (HALT) testing holds promise for affordable efficient acceptance testing of multi-layer ceramic chip capacitors (MLCCs) especially for commercial off the shelf (COTS).
Accelerated life testing effects on CMOS microcircuit characteristics
Accelerated life tests were performed on CMOS microcircuits to predict their long term reliability. The consistency of the CMOS microcircuit activation energy between the range of 125 C to 200 C and the range 200 C to 250 C was determined. Results indicate CMOS complexity and the amount of moisture detected inside the devices after testing influences time to failure of tested CMOS devices.
Accelerated life testing of spacecraft subsystems
The rationale and requirements for conducting accelerated life tests on electronic subsystems of spacecraft are presented. A method for applying data on the reliability and temperature sensitivity of the parts contained in a sybsystem to the selection of accelerated life test parameters is described. Additional considerations affecting the formulation of test requirements are identified, and practical limitations of accelerated aging are described.
Accelerated life testing effects on CMOS microcircuit characteristics, phase 1
An accelerated life test of sufficient duration to generate a minimum of 50% cumulative failures in lots of CMOS devices was conducted to provide a basis for determining the consistency of activation energy at 250 C. An investigation was made to determine whether any thresholds were exceeded during the high temperature testing, which could trigger failure mechanisms unique to that temperature. The usefulness of the 250 C temperature test as a predictor of long term reliability was evaluated.
Accelerated life testing effects on CMOS microcircuit characteristics
This report covers the time period from May 1976 to December 1979 and encompasses the three phases of accelerated testing: Phase 1, the 250 C testing; Phase 2, the 200 C testing; and Phase 3, the 125 C testing. The duration of the test in Phase 1 and Phase 2 was sufficient to take the devices into the wear out region. The wear out distributions were used to estimate the activation energy between the 250 C and the 200 C test temperatures. The duration of the 125 C test, 20,000 hours, was not sufficient to bring the test devices into the wear out region; consequently the third data point at 125 C for determining the consistency of activation energy could not be obtained. It was estimated that, for the most complex of the three device types, the activation energy between 200 C and 125 C should be at least as high as that between 250 C and 200 C. The practicality of the use of high temperature for the accelerated life tests from the point of view of durability of equipment was assessed. Guidelines for the development of accelerated life test conditions were proposed. The use of the silicon nitride overcoat to improve the high temperature accelerated life test characteristics of CMOS microcircuits was explored in Phase 4 of this study and is attached as an appendix to this report.
Accelerated life testing effects on CMOS microcircuit characteristics
The 250 C, 200C and 125C accelerated tests are described. The wear-out distributions from the 250 and 200 C tests were used to estimate the activation energy between the two test temperatures. The duration of the 125 C test was not sufficient to bring the test devices into the wear-out region. It was estimated that, for the most complex of the three devices types, the activation energy between 200 C and 125 C should be at least as high as that between 250 C and 200 C. The practicality of the use of high temperature for the accelerated life tests from the point of view of durability of equipment is assessed. Guidlines for the development of accelerated life-test conditions are proposed. The use of the silicon nitride overcoat to improve the high temperature accelerated life-test characteristics of CMOS microcircuits is described.
Accelerated life testing and temperature dependence of device characteristics in GaAs CHFET devices
Accelerated life testing of GaAs complementary heterojunction field effect transistors (CHFET) was carried out. Temperature dependence of single and synchronous rectifier CHFET device characteristics were also obtained.
NWSC nickel cadmium spacecraft cell accelerated life test program data analysis
An analysis of the data leading to a proposed accelerated life test scheme to test a nickel cadmium cell under spacecraft usage conditions is described. The amount and concentration of electrolyte and the amount of precharge in the cell are discussed in relation to the design of the cell and the accelerated test design. A failure analysis of the cell is summarized. The analysis included such environmental test variables as the depth of discharge, the temperature, the amount of recharge and the charge and discharge rate.
Applications of Fracture Mechanics to Quantitative Accelerated Life Testing of Plastic Encapsulated Microelectronics
Accelerated testing must address the failure mechanisms active within the devices undergoing tests in order to assess lifetimes in a meaningful way. The assumption of constant temperature, thermally activated lifetime, based upon the Arrhenius assumptions, does not always provide the necessary understanding to interpret accelerated tests in microelectronics. Plastic encapsulants, dielectric polymers, and underfill materials are subject to delamination and cracking with thermal cycling. Crack propagation during use environment exposure, drives the potential for failure of microelectronic devices and is therefore a necessary focal point in qualification and life testing. This paper reviews the available research in the application of fracture mechanics to this class of problems in microelectronics including relevant test data. In addition, useful acceleration factor models are derived for polymer crack propagation based on principles of linear elastic fracture mechanics. Further, a simple approach to estimating the minimum temperature cycling ranges, necessary to propagate a crack, is also presented. Finally, a methodology of applying acceleration factors to develop testing plans is shown, with an example in spaceflight for a cubesat in low Earth orbit. Overall, this is a paper that shows a useful and appropriate process for creating physics of failure based life testing for delamination and cracking failures in microelectronic polymers in a temperature cycling environment.
Accelerated life testing and reliability of high K multilayer ceramic capacitors
The reliability of one lot of high K multilayer ceramic capacitors was evaluated using accelerated life testing. The degradation in insulation resistance was characterized as a function of voltage and temperature. The times to failure at a voltage-temperature stress conformed to a lognormal distribution with a standard deviation approximately 0.5.
Accelerated test techniques for micro-circuits: Evaluation of high temperature (473 k - 573 K) accelerated life test techniques as effective microcircuit screening methods
The application of high temperature accelerated test techniques was shown to be an effective method of microcircuit defect screening. Comprehensive microcircuit evaluations and a series of high temperature (473 K to 573 K) life tests demonstrated that a freak or early failure population of surface contaminated devices could be completely screened in thirty two hours of test at an ambient temperature of 523 K. Equivalent screening at 398 K, as prescribed by current Military and NASA specifications, would have required in excess of 1,500 hours of test. All testing was accomplished with a Texas Instruments' 54L10, low power triple-3 input NAND gate manufactured with a titanium- tungsten (Ti-W), Gold (Au) metallization system. A number of design and/or manufacturing anomalies were also noted with the Ti-W, Au metallization system. Further study of the exact nature and cause(s) of these anomalies is recommended prior to the use of microcircuits with Ti-W, Au metallization in long life/high reliability applications. Photomicrographs of tested circuits are included.
Voltage stress effects on microcircuit accelerated life test failure rates
The applicability of Arrhenius and Eyring reaction rate models for describing microcircuit aging characteristics as a function of junction temperature and applied voltage was evaluated. The results of a matrix of accelerated life tests with a single metal oxide semiconductor microcircuit operated at six different combinations of temperature and voltage were used to evaluate the models. A total of 450 devices from two different lots were tested at ambient temperatures between 200 C and 250 C and applied voltages between 5 Vdc and 15 Vdc. A statistical analysis of the surface related failure data resulted in bimodal failure distributions comprising two lognormal distributions; a 'freak' distribution observed early in time, and a 'main' distribution observed later in time. The Arrhenius model was shown to provide a good description of device aging as a function of temperature at a fixed voltage. The Eyring model also appeared to provide a reasonable description of main distribution device aging as a function of temperature and voltage. Circuit diagrams are shown.
Accelerated life test of sputtering and anode deposit spalling in a small mercury ion thruster
Tantalum and molybdenum sputtered from discharge chamber components during operation of a 5 centimeter diameter mercury ion thruster adhered much more strongly to coarsely grit blasted anode surfaces than to standard surfaces. Spalling of the sputtered coating did occur from a coarse screen anode surface but only in flakes less than a mesh unit long. The results were obtained in a 200 hour accelerated life test conducted at an elevated discharge potential of 64.6 volts. The test approximately reproduced the major sputter erosion and deposition effects that occur under normal operation but at approximately 75 times the normal rate. No discharge chamber component suffered sufficient erosion in the test to threaten its structural integrity or further serviceability. The test indicated that the use of tantalum-surfaced discharge chamber components in conjunction with a fine wire screen anode surface should cure the problems of sputter erosion and sputtered deposits spalling in long term operation of small mercury ion thrusters.
Accelerated life tests of specimen heat pipe from Communication Technology Satellite (CTS) project
A gas-loaded variable conductance heat pipe of stainless steel with methanol working fluid identical to one now on the CTS satellite was life tested in the laboratory at accelerated conditions for 14 200 hours, equivalent to about 70 000 hours at flight conditions. The noncondensible gas inventory increased about 20 percent over the original charge. The observed gas increase is estimated to increase operating temperature by about 2.2 C, insufficient to harm the electronic gear cooled by the heat pipes in the satellite. Tests of maximum heat input against evaporator elevation agree well with the manufacturer's predictions.
An Accelerated Life Testing Dataset for Lithium-Ion Batteries With Constant and Variable Loading Conditions
The dataset repository is organized into three main folders, each containing one group of life cycled battery packs. Within each folder individual battery packs own their dedicated csv file for continuous data logging, which are named with their respective battery pack number. The folders are named: - regular_alt_batteries: Containing one csv file for each battery pack cycled at the same load level or load range throughout lifetime - recommissioned_batteries: Containing one csv file for each battery pack cycled at different load levels at varying life stages - second_life_batteries: Containing one csv file for each second life battery pack cycled at constant current througout the second life
Ceramic capacitor accelerated life test program Final report
Spacecraft component ceramic capacitor life tests and failure modes
Accelerated life testing effects on CMOS microcircuit characteristics
Modifications and additions to the present process of making CMOS microcircuits which are designed to provide protective layers on the chip to guard against moisture and contaminants were investigated. High and low temperature Si3N4 protective layers were tested on the CMOS microcircuits and no conclusive improvements in device reliability characteristics were evidenced.