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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Defect characterization of silicon dendritic web ribbons

Progress made in the study of defect characterization of silicon dendritic web ribbon is presented. Chemical etching is used combined with optical microscopy, as well as the electron beam induced current (EBIC) technique. Thermal annealing effect on carrier lifetime is examined.

Cheng, L. J.↗

Microstructural and Defect Characterization in Ceramic Composites Using an Ultrasonic Guided Wave Scan System

In this study, an ultrasonic guided wave scan system was used to characterize various microstructural and flaw conditions in two types of ceramic matrix composites, SiC/SiC and C/SiC. Rather than attempting to isolate specific lamb wave modes to use for characterization (as is desired for many types of guided wave inspection problems), the guided wave scan system utilizes the total (multi-mode) ultrasonic response in its inspection analysis. Several time and frequency-domain parameters are calculated from the ultrasonic guided wave signal at each scan location to form images. Microstructural and defect conditions examined include delamination, density variation, cracking, and pre/ post-infiltration. Results are compared with thermographic imaging methods. Although the guided wave technique is commonly used so scanning can be eliminated, applying the technique in the scanning mode allows a more precise characterization of defect conditions.

Roth, D. J.↗

Material Properties and Defects Characterization Using LLW Data

Leaky Lamb Wave (LLW) propagation in composite materials has been studied extensively since it was first observed in 1982. The wave is induced using a pitch-catch arrangement and the plate wave modes are detected by identifying minima in the reflected spectra to obtain the dispersion data.

Composites↗

Defect characterization in ZnGeP2 by time-resolved photoluminescence

The native defect-related optical properties of ZnGeP2 are studied by steady-state and time-resolved photoluminescence. ZnGeP2 crystals grown from the vapor phase by high pressure physical vapor transport (HPVT) and from the melt by gradient freezing (GF) show a broad infrared emission with peak position at 1.2 eV with a decay time constant of a few micro-s and a faster recombination center peaked at 1.68 eV. The decay transient for the emission at 1.2 eV exhibits features of classical donor-acceptor recombination and is linked to close-pairs that are tentatively associated with germanium-on-zinc antisite donors and zinc vacancy acceptors. Higher energetic luminescence structures at 1.6eV and 1.7eV are revealed after annealing of the ZnGeP2 crystals and are associated with the formation zinc and phosphorous vacancies in the near surface region. ZnGeP2 crystals grown by HPVT from zinc and phosphorus supersaturated vapor compositions show additional emission structure at 1.8 eV and a sharp donor-acceptor emission at 1.778 eV that is related to the presence of additional donor states.

Dietz, N.↗

Structural defect characterization of silicon dendritic web ribbons

An EBIC study of the cross section of silicon dendritic web ribbon has revealed that recombination-active structural defects are mainly concentrated in the inner part of the ribbon, particularly at and near the twin plane, whereas the material near the surface has significantly fewer defects. An analysis of the distribution of etch pits due to slip dislocations created by shear stress indicates that a minimum in the dislocation density is frequently observed in the ribbon adjacent to the dendrite.

Cheng, L. J.↗

Defect Characterization in a Thin Walled Composite RP-1 Tank: A Case Study

A full scale thin walled composite tank, designed and fabricated for the storage of pressurized RP- I rocket fuel, was fully inspected with digital infrared thermography (IR) during assembly and prior to proof testing. The tank featured a "pill capsule" design with the equatorial bondline being overwrapped on both the inner and outer surfaces. A composite skirt was bonded to the aft dome of the tank to serve as a structural support when the tank was stood on end in service. Numerous anomalies were detected and mapped prior to proof testing, some along bondlines and some scattered throughout the acreage. After the tank was intentionally burst, coupons were cut from the regions including thermographic anomalies. These coupons were again inspected thermographically to document the growth of any indications due to proof testing. Ultrasonic inspections (UT) were also performed on the coupons for comparison to thermography. Several coupons were dissected and micrographed. Relationships between IR and UT indications and the physical nature of the dissected material are presented.

Langsing, Matthew D.↗

ASTM International Conference on Additive Manufacturing – 2022

The In-Situ Project: Correlating In-situ monitoring data and Non-Destructive Evaluation (NDE) methods to characterize defect populations in Laser Powder Bed Fusion (L-PBF) material NDE is critical to enable the safe use of additive manufactured (AM) parts in aerospace applications. However, traditional NDE methods are not fully adaptable to complex AM geometries to appropriately screen for critical defects, and L-PBF processes inherently generate defects. In-situ monitoring techniques can give information about the quality of the build process and indicate process variations that could potentially create defects. Proven, causal correlations between in-situ monitoring indications and resulting defects are needed to inform about the final quality of the part. Thus, the development of a new approach is necessary. NASA started a two-phase study that would investigate techniques for characterizing defect populations in L-PBF material, first in material with induced defects, then in a nominal L-PBF process, by correlating in-situ, NDE, and serial sectioning data. Objectives also include the evaluation of seeded defect methodologies for realistic defect creation, creating a baseline of defect populations in a Qualified Material Process (QMP), characterizing the effect of heat treatment, and correlating defect populations with tensile and fatigue properties. By comparing computed tomography images, in-situ monitoring images, and metallography images, the team has been able to draw preliminary conclusions. They include a better understanding of the limitation of the NDE tools, learning about the “healing” of the samples observed during layer building and a comparison study on different laser power variation samples. Those preliminary conclusions will help dictate the follow-up work that will be presented at the conference.

additive manufacturing↗

Method and System for Multi-Path Active Defect Detection, Localization and Characterization with Ultrasonic Guided Waves

A method and system of detecting, localizing, and characterizing a defect at one or more spatial points of interest on a structure. The method may include collecting first data in a first state using one or more transducers on the structure, collecting second data in a second state subsequent to the first state, computing a scattered impulse response based on the collected first data and the collected second data, comparing the scattered impulse response with an estimated scattered impulse response corresponding to the case when damage is present at one or more spatial points of interest on the structure, and combining the generated comparison results to detect, localize, and characterize a defect at the one or more spatial points of interest on the structure.

Hall, James Stroman↗

Characterization of defect growth structure in ion plated films by scanning electron microscopy

Copper and gold films (0.2 to 2 microns) were ion plated onto polished 304-stainless-steel surfaces. These coatings were examined by scanning electron microscopy for coating growth defects. Three types of defects were distinguished: nodular growth, abnormal or runaway growth, and spits. The cause and origin for each type of defect was traced. Nodular growth is primarily due to inherent substrate microdefects, abnormal or runaway growth is due to external surface inclusions, and spits are due to nonuniform evaporation. All these defects have adverse effects on the coatings. They induce stresses and produce porosity in the coatings and thus weaken their mechanical properties. Friction and wear characteristics are affected by coating defects, since the large nodules are pulled out and additional wear debris is generated.

Spalvins, T.↗

Characterization of defect growth structures in ion plated films by scanning electron microscopy

Gold and copper films (0.2-2 micron thick) are ion plated on very smooth stainless steel 304 and mica surfaces. The deposited films are examined by SEM to identify the morphological growth of defects. Three types of coating defects are distinguished: nodular growth, abnormal or runaway growth, and spits. The potential nucleation sites for defect growth are analyzed to determine the cause of defect formation. It is found that nuclear growth is due to inherent surface microdefects, abnormal or runaway growth is due to external surface inclusions, and spits are due to nonuniform evaporation and ejection of droplets. All these defects have adverse effects on the coatings.

Spalvins, T.↗

Electronic characterization of defects in narrow gap semiconductors

The study of point defects in semiconductors has a long and honorable history. In particular, the detailed understanding of shallow defects in common semiconductors traces back to the classic work of Kohn and Luttinger. However, the study of defects in narrow gap semiconductors represents a much less clear story. Here, both shallow defects (caused by long range potentials) and deep defects (from short range potentials) are far from being completely understood. In this study, all results are calculational and our focus is on the chemical trend of deep levels in narrow gap semiconductors. We study substitutional (including antisite), interstitial and ideal vacancy defects. For substitutional and interstitial impurities, the efects of relaxation are included. For materials like Hg(1-x)Cd(x)Te, we study how the deep levels vary with x, of particular interest is what substitutional and interstitial atoms yield energy levels in the gap i.e. actually produce deep ionized levels. Also, since the main technique utilized is Green's functions, we include some summary of that method.

Patterson, James D.↗

Electronic characterization of defects in narrow gap semiconductors

We use a Green's function technique to calculate the position of deep defects in narrow gap semiconductors. We consider substitutional (including antisite), vacancy, and interstitial (self and foreign) deep defects. We also use perturbation theory to look at the effect of nonparabolic bands on shallow defect energies and find nonparabolicity can increase the binding by 10 percent or so. We consider mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS). For substitutional and interstitial defects we look at the situation with and without relaxation. For substitutional impurities in MCT, MZT, and MZS, we consider x (the concentration of Cd or Zn) in the range 0.1 less than x less than 0.3 and also consider appropriate x so E(sub g) = 0.1 eV for each of the three compounds. We consider several cation site s-like deep levels and anion site p-like levels. For E(sub g) = 0.1 eV, we also consider the effects of relaxation. Similar comments apply to the interstitial deep levels whereas no relaxation is considered for the ideal vacancy model. Relaxation effects can be greater for the interstitial than the substitutional cases. Specific results are given in figures and tables and comparison to experiment is made in a limited number of cases. We find, for example, that I, Se, S, Rn, and N are possible cation site, s-like deep levels in MCT and Zn and Mg are for anion site, p-like levels (both levels for substitutional cases). The corresponding cation and anion site levels for interstitial deep defects are (Au, Ag, Hg, Cd, Cu, Zn) and (N, Ar, O, F). For the substitutional cases we have some examples of relaxation moving the levels into the band gap, whereas for the interstitial case we have examples where relaxation moves it out of the band gap. Future work involves calculating the effects of charge state interaction and seeing the effect of relaxation on vacancy levels.

Patterson, James D.↗

Characterization on defect solids

The purpose of this research has been to develop new semi-empirical techniques to describe ceramics, alloys, and metal/ceramic interfaces with applications in mind that support the materials aspects of the high speed civil transport program (HSCT). HSCT requires methods that aid in the design of alloys and ceramics for new high strength, high temperature applications. Current theoretical methods are not capable of carrying out this mission. Hence, new accurate and more efficient theoretical techniques are needed to facilitate the design of new materials and the examination of their properties. This program concentrated on modeling ceramics, but also dealt with alloy properties to a lesser degree. The primary accomplishment of this research was the development of a new equation of state (EOS) that models the energy/bond length relationship and includes terms that represent charge transfer between cations and anions. The new EOS has been used by researchers at the Naval Research Laboratory to develop a new semi-empirical method for calculating properties of ceramics and metal ceramic interfaces based on the embedded atom method. The results of the director's discretionary fund (DDF) research describing the binding energy relation was the enabling theoretical basis. Also the workers at Cleveland State and NASA Lewis have detailed an approach based on equivalent crystal theory as part of the DDF which is currently under development. In addition, initial results for using the Harris functional method have been developed. Finally, the techniques developed by us have proved useful for the study of high pressure properties of solids and have been used extensively by researchers in this field.

Schlosser, Herbert↗