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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Electron paramagnetic resonance and Hall effect measurements to determine properties of dominant paramagnetic defect in electron irradiated p-type silicon
Single crystal p-type zinc antimonide in thermoelectric, thermoconductivity and electronic transport measurements
Electron decay rate and absorption cross sections for electron holes and recombination in gamma irradiated n-type silicon
Cobalt 60 gamma radiation effects on Metal Oxide Semiconductors /MOS/ with p-type and n-type silicon substrates
Proton irradiation effect on Hall coefficient, resistivity and magnetoresitance of p-type bismuth telluride single crystals
Defect impurity relation in electron damaged p-type silicon and electron irradiation effect on float zone n-type silicon
A new method for fabricating photocells, or solar cells, substitutes copper iodide for zinc diffusion. This produces a p-type surface layer and a photovoltaic junction.
A convenient, three-step fabrication process, with a p-type layer of gallium arsenide vapor deposited on a starting wafer of germanium, is used to produce heterojunction-homojunction p-n-p transistors. These are of high quality with good injection efficiency and low capacitance.
Energy level defects in n- and p-type silicon due to high energy protons, and comparison with electron damage
Radiation effect on silicon - introduction rates of vacancy-phosphorus defect and divacancy in p-type material for solar cell application
Single crystals of p-type zinc antimonide - thermal and electronic transport properties
Exposure to high energy electron radiation reduces the temperature coefficients of resistance and gage factor of a range of resistivities of n- and p-type semiconductor silicon strain gages. After irradiation, the gages are heated to a high temperature for a 24-hour period to stabilize their temperature coefficients.
Epitaxial deposition of P-type silicon into etche grooves in N-type silicon for P-N junction for complimentary MOS-FET devices
Photoelectric yield data on n- and p-type silicon carbide crystals in vacuum UV
Modified three-step process controls the concentration of lithium diffused as a dopant into the base region of a diffused n-on-p silicon solar cell wafer. Part of the surface layer of the base region of the p-type silicon containing the diffused dopant is removed, prior to redistributing the remaining portion of the dopant into the bulk of the wafer.
Subthreshold electron irradiation effects on surface recombination properties of n- and p-type germanium and silicon crystals
Test results are presented for a nine couple (3 x 3 array) thermoelectric panel of hybrid thermocouples. In the hybrid couple, a hollow cylinder of p-type Si-Ge is used to encapsulate a segmented PbTe/Si-Ge n-leg. The hybrid couple is predicted to offer a 10- to 15-percent improvement in performance relative to all Si-Ge couples. The efficiency, output power, and internal resistance of the panel as well as the resistances of the individual hybrid couples are presented as a function of test time covering a period of more than 2600 hours. Initial test results indicated hybrid couple performance consistent with design predictions. Extraneous resistance ranged from 20 to 25% of the hybrid couple thermoelectric resistance.
Oxide isolated islands of N and P type silicon semiconductors by epitaxial deposition and etching for complimentary MOS-FET devices