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Results for “platinum silicide”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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17 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Superconducting platinum silicide analyzed by x-ray photoelectron spectroscopy

Platinum silicide has garnered increased attention due to its potential applications as a superconductor within silicon technology. In this work, we characterize a superconducting PtSi film using x-ray photoelectron spectroscopy with an Al K α excitation source. Survey spectra, Pt 5s, Pt 4f, Pt 4d, Pt 4p, Pt 4s, Si 2p, Si 2s, O 1s core levels, and the valence band spectrum were measured. In conclusion, this collection of high-quality core level spectra of a superconducting PtSi film provide reference data for this material, which often has a minimal native silicon oxide layer and overlapping Si and Pt core level peaks.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Synthesis and electrical transport properties of superconducting platinum silicide thin films and devices

Here, we evaluate the material characteristics of superconducting platinum silicide (PtSi) thin films as candidate materials for superconducting quantum information devices compatible with silicon technology. These films were synthesized using magnetron sputtering under ultrahigh vacuum conditions, followed by rapid thermal annealing. Polycrystalline PtSi films synthesized by this method have the favorable properties of superconducting critical temperature of 0.95 K and relatively long zero-temperature Ginzburg-Landau coherence length of 76 nm. We further studied coplanar microbridge devices fabricated by electron beam lithography and chlorine-free reactive ion etching, finding that the temperature-dependent critical current density follows the Ginzburg Landau depairing mechanism.

36 MATERIALS SCIENCE↗
NASA NTRS1974

Development and fabrication of improved Schottky power diodes, phases I and II

Reproducible methods for the fabrication of silicon Schottky diodes were developed for the metals tungsten, aluminum, conventional platinum silicide and low temperature platinum silicide. Barrier heights and barrier lowering were measured permitting the accurate prediction of ideal forward and reverse diode performance. Processing procedures were developed which permit the fabrication of large area (approximately 1 sqcm) mesa-geometry power Schottky diodes with forward and reverse characteristics that approach theoretical values.

Cordes, L. F.↗
NASA NTRS1975

Development and fabrication of improved Schottky power diodes

Reproducible methods for the fabrication of silicon Schottky diodes have been developed for tungsten, aluminum, conventional platinum silicide, and low temperature platinum silicide. Barrier heights and barrier lowering under reverse bias have been measured, permitting the accurate prediction of forward and reverse diode characteristics. Processing procedures have been developed that permit the fabrication of large area (about 1 sq cm) mesageometry power Schottky diodes with forward and reverse characteristics that approach theoretical values. A theoretical analysis of the operation of bridge rectifier circuits has been performed, which indicates the ranges of frequency and voltage for which Schottky rectifiers are preferred to p-n junctions. Power Schottky rectifiers have been fabricated and tested for voltage ratings up to 140 volts.

Cordes, L. F.↗
NASA NTRS1990

Self-Aligned Guard Rings For Schottky-Barrier Diodes

Proposed self-aligned guard ring increases active area of Schottky-barrier infrared detector. Concept developed for silicide Schottky-barrier diodes in which platinum silicide or iridium silicide Schottky-contacts provide cutoff wavelengths of about 6 or 10 micrometers. Grid of silicon dioxide doped with phosphorus etched on silicon wafer, and phosphorus from grid diffused into substrate, creating n-type guard rings. Silicide layers formed in open areas of grid. Overlap of guard rings and silicide layers small.

Lin, True-Lon↗
DOE OSTI2026

Current-Phase Relations of Superconducting PtSi Constriction Josephson Junctions

Here, we study the current-phase relations of superconductor–constriction–superconductor Josephson junctions made from platinum silicide thin films by fabricating dc-superconducting quantum interference devices incorporating pairs of junctions and measuring their magnetic-field-dependent electrical transport. By comparing the supercurrent interference patterns with numerical Ginzburg–Landau simulations, we extract the current-phase relations of individual junctions and quantify the degree of nonlinearity. These measurements show that while the constrictions themselves sustain substantial nonlinearity, the effect is moderated by the kinetic inductance of the device leads, which is an important consideration for practical superconducting circuit applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1977

New process produces high-power Schottky diodes

Processing procedure using low-temperature platinum silicide, results in successful high-yield fabrication of large-area mesa-geometry Schottky diodes, with reverse breakdown voltages as high as 150 volts and leak currents less than 5 milliamps at 212 F.

Cordes, L. F.↗
NASA NTRS1981

Surface acoustic waves/silicon monolithic sensor processor

Progress is reported in the creation of a two dimensional Fourier transformer for optical images based on the zinc oxide on silicon technology. The sputtering of zinc oxide films using a micro etch system and the possibility of a spray-on technique based on zinc chloride dissolved in alcohol solution are discussed. Refinements to techniques for making platinum silicide Schottky barrier junctions essential for constructing the ultimate convolver structure are described.

Kowel, S. T.↗
NASA NTRS1986

Infrared technology and applications; Proceedings of the Meeting, Cannes, France, November 26-29, 1985

The present conference on state-of-the-art IR systems and components technologies and their applications encompasses developments in IR systems design, production technologies, IR component testing, IR systems evaluations, laboratory and industrial applications, and aerospace ranging sensor and surveillance sensor applications. Attention is given to IR zoom lens telescopes, large zinc sulphide windows for airborne applications, thermal imaging system evaluation, minimum resolvable temperature difference measurement methods, industrial use of IR spectroscopy, platinum silicide sensor imagery, and recent developments in laser rangefinders.

Baker, Lionel R.↗
NASA NTRS1989

Experimental determination of plume properties in full-scale hydrogen-oxygen rockets

An IR emission/absorption technique for determining radial profiles of static temperature and species partial pressure for cylindrically symmetric combustion gases typical of the effluent of turbine engines and liquid-propellant rockets is described. In the technique, the IR plume radiance and absorption is measured using a 1 x 256-element platinum silicide detector array which is filtered to obtain plume emission measurements in the H2O band near 3.0 microns. A minicomputer is employed to control data acquisition and reduction.

Brown, D. G.↗
NASA NTRS1992

Radiometric infrared focal plane array imaging system for thermographic applications

This document describes research performed under the Radiometric Infrared Focal Plane Array Imaging System for Thermographic Applications contract. This research investigated the feasibility of using platinum silicide (PtSi) Schottky-barrier infrared focal plane arrays (IR FPAs) for NASA Langley's specific radiometric thermal imaging requirements. The initial goal of this design was to develop a high spatial resolution radiometer with an NETD of 1 percent of the temperature reading over the range of 0 to 250 C. The proposed camera design developed during this study and described in this report provides: (1) high spatial resolution (full-TV resolution); (2) high thermal dynamic range (0 to 250 C); (3) the ability to image rapid, large thermal transients utilizing electronic exposure control (commandable dynamic range of 2,500,000:1 with exposure control latency of 33 ms); (4) high uniformity (0.5 percent nonuniformity after correction); and (5) high thermal resolution (0.1 C at 25 C background and 0.5 C at 250 C background).

Esposito, B. J.↗
NASA NTRS1992

Design and initial performance evaluation of a portable short wave infrared spectroradiometer

The design, initial calibration, and performance evaluations of a portable short wave infrared (SWIR) spectroradiometer are described. The spectroradiometer covers the range from 1.1 to 2.5 microns with a spectral resolution that may be varied from less than 10 nm to more than 100 nm. A single spectrum is acquired in about 2 sec. The SNR is about 230 at a wavelength of 2.2 microns for a Lambertian surface of 90-percent reflectance illuminated by the sun at normal incidence with 14.8-nm resolution, a 25 C background temperature, and no atmospheric attenuation. FOV-defining optics are coupled by a flexible fiber-optics bundle to the spectroradiometer, which consists of a concave holographic diffraction grating with a flat focal field imaged onto a 1024-element platinum silicide linear-array detector.

Smith, Mark W.↗
NASA NTRS1992

Real-time processor for staring receivers

The design, fabrication, and testing of a state-of-the-art, high-throughput on-focal plane IR-image signal processor is described. The processing functions performed are frame differencing and thresholding. The final focal plane array will consist of a 128 x 128-pixel platinum-silicide detector bump-mounted to an on-chip CCD multiplexer. The processor is in a 128-channel parallel-pipeline format. Each channel consists of a pixel regenerator (charge differencer), 128-pixel frame store CCD memory, pixel differencer, second pixel regenerator, thresholder (analog comparator), and digital latch. Four parallel analog outputs and four parallel digital outputs are included. The digital outputs provide a bit map of the image. All analog clock signals (128 KHz, 256 KHz, and 5 MHz) are generated by on-chip TTL-input clock drivers. TTL clock driver inputs are generated off-chip. The technology is low-temperature surface and buried channel CCD/CMOS/indium bump. The design goal was 8-bit resolution at 77 K and 1000 frames/s. Applications include point- or extended-target motion detection with thresholding. Design trade-offs and enhancements (such as on-chip detector gain compensation and a simple window processor) are discussed.

Hanzal, Brian↗
NASA NTRS2005

Non-contact Creep Resistance Measurement for Ultra-high temperature Materials

Continuing pressures for higher performance and efficiency in propulsion are driving ever more demanding needs for high-temperature materials. Some immediate applications in spaceflight include combustion chambers for advanced chemical rockets and turbomachinery for jet engines and power conversion in nuclear-electric propulsion. In the case of rockets, the combination of high stresses and high temperatures make the characterization of creep properties very important. Creep is even more important in the turbomachinery, where a long service life is an additional constraint. Some very high-temperature materials are being developed, including platinum group metals, carbides, borides, and silicides. But the measurement of creep properties at very high temperatures is itself problematic, because the testing instrument must operate at such high temperatures. Conventional techniques are limited to about 1700 C. A new, containerless technique for measuring creep deformation has been developed. This technique is based on electrostatic levitation (ESL) of a spherical sample, which is heated to the measurement temperature and rotated at a rate such that the centrifugal acceleration causes creep deformation. Creep of samples has been demonstrated at up to 2300 C in the ESL facility at NASA MSFC, while ESL itself has been applied at over 3000 C, and has no theoretical maximum temperature. The preliminary results and future directions of this NASA-funded research collaboration will be presented.

Hyers, Robert W.↗
NASA NTRS2013

Advanced Materials and Manufacturing for Low-Cost, High-Performance Liquid Rocket Combustion Chambers

A document describes the low-cost manufacturing of C103 niobium alloy combustion chambers, and the use of a high-temperature, oxidation-resistant coating that is superior to the standard silicide coating. The manufacturing process involved low-temperature spray deposition of C103 on removable plastic mandrels produced by rapid prototyping. Thin, vapor-deposited platinum-indium coatings were shown to substantially improve oxidation resistance relative to the standard silicide coating. Development of different low-cost plastic thrust chamber mandrel materials and prototyping processes (selective laser sintering and stereolithography) yielded mandrels with good dimensional accuracy (within a couple of mils) for this stage of development. The feasibility of using the kinetic metallization cold-spray process for fabrication of free-standing C1O3 thrusters on removable plastic mandrels was also demonstrated. The ambient and elevated temperature mechanical properties of the material were shown to be reasonably good relative to conventionally processed C103, but the greatest potential benefit is that coldsprayed chambers require minimal post-process machining, resulting in substantially lower machining and material costs. The platinum-iridium coating was shown to provide greatly increased oxidation resistance over the silicide when evaluated through oxyacetylene torch testing to as high as 300 F (= 150 C). The iridium component minimizes reaction with the niobium alloy chamber at high temperatures, and provides the high-temperature oxidation resistance needed at the throat.

Williams, Brian E.↗
NASA NTRS2004

Thin-Film Ceramic Thermocouples Fabricated and Tested

The Sensors and Electronics Technology Branch of the NASA Glenn Research Center is developing thin-film-based sensors for surface measurement in propulsion system research. Thin-film sensors do not require special machining of the components on which they are mounted, and they are considerably thinner than wire- or foil-based sensors. One type of sensor being advanced is the thin-film thermocouple, specifically for applications in high-temperature combustion environments. Ceramics are being demonstrated as having the potential to meet the demands of thin-film thermocouples in advanced aerospace environments. The maximum-use temperature of noble metal thin-film thermocouples, 1500 C (2700 F), may not be adequate for components used in the increasingly harsh conditions of advanced aircraft and next-generation launch vehicles. Ceramic-based thermocouples are known for their high stability and robustness at temperatures exceeding 1500 C, but are typically in the form of bulky rods or probes. As part of ASTP, Glenn's Sensors and Electronics Technology Branch is leading an in-house effort to apply ceramics as thin-film thermocouples for extremely high-temperature applications as part of ASTP. Since the purity of the ceramics is crucial for the stability of the thermocouples, Glenn's Ceramics Branch and Case Western Reserve University are developing high-purity ceramic sputtering targets for fabricating high-temperature sensors. Glenn's Microsystems Fabrication Laboratory, supported by the Akima Corporation, is using these targets to fabricate thermocouple samples for testing. The first of the materials used were chromium silicide (CrSi) and tantalum carbide (TaC). These refractory materials are expected to survive temperatures in excess of 1500 C. Preliminary results indicate that the thermoelectric voltage output of a thin-film CrSi versus TaC thermocouple is 15 times that of the standard type R (platinum-rhodium versus platinum) thermocouple, producing 20 mV with a 200 C temperature gradient. The photograph on the left shows the CrSi-TaC thermocouple in a test fixture at Glenn, and the resulting output signal is shown on the right. The temperature differential across the sample, from the center of the sample inside the oven to the sample mount outside the oven, is measured using a type R thermocouple on the sample.

Wrbanek, John D.↗
NASA NTRS1994

Ampoule failure sensor time response testing: Experiments 2 and 3

The response time of an ampoule failure sensor exposed to a liquid or vapor gallium-arsenide (GaAs) and the corresponding breach time of the containing cartridge is investigated. The experiments were conducted in niobium-hafnium (WC-103) cartridges with an exterior silicide coating. These cartridges were built to flight specifications that were used in NASA's Crystal Growth Furnace during the first United States Microgravity Laboratory (USML-1) mission. The ampoule failure sensor is a chemical fuse made from a metal with which the semiconductor material reacts more rapidly than it does with the containing cartridge. In these experiments a platinum metal was used for the manufacture of the sensors. This technical report discusses the response time of two different sensor designs. The first design utilizes a helical wrapped wire and the second uses a single bare wire element. Experimental results indicate that both sensors are adequate in sensing the presence of molten or vapor GaAs with the latter having a 2-minute longer response time. In both experiments, the containing cartridge was breached within 185 minutes after ampoule rupture.

Johnson, M. L.↗