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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

LGAD-Based Silicon Sensors for 4D Detectors

Low-Gain Avalanche Diodes (LGAD) are a class of silicon sensors developed for the fast detection of Minimum Ionizing Particles (MIPs). The development was motivated by the need of resolving piled-up tracks of charged particles emerging from several vertexes originating from the same bunch-crossing in High-Energy Physics (HEP) collider experiments, which, however, are separated not only in space but also in time by a few tens of picoseconds. Built on thin silicon substrates and featuring an internal moderate gain, they provide fast signals for excellent timing performance, which are therefore useful to distinguish the different tracks. Unfortunately, this comes at the price of poor spatial resolution. To overcome this limitation, other families of LGAD-based silicon sensors which can deliver in the same substrate both excellent timing and spatial information are under development. Such devices are, to name a few, capacitively coupled LGADs (AC-LGAD), deep-junction LGADs (DJ-LGAD) and trench-isolated LGADs (TI-LGADs). These devices can be fabricated by even small-scale research-focused clean rooms for faster development within the scientific community. However, to scale up production, efforts towards integrating these sensor concepts in CMOS substrates, with the obvious advantage of the possibility of integrating part of the read-out electronics in the same substrate, have begun.

spatial resolution↗
DOE OSTI2026

Quality Control of Silicon Sensor Modules for Particle Detectors

The High-Luminosity Large Hadron Collider (HL-LHC) will produce a higher rate of particle collisions than the current Large Hadron Collider (LHC), requiring important upgrades to the Compact Muon Solenoid (CMS) to handle an increased amount of data. An important upgrade is the Phase-2 Outer Tracker Upgrade, which consists of 13,000 silicon sensor modules made of two parallel silicon sensors and readout electronics. These modules undergo careful quality control checks both during and after module assembly to ensure precise and reliable detector performance. This project focuses on precision testing for quality control of silicon sensor modules at Fermilab. Hands-on work includes visual inspection, current-voltage testing, module testing, and ultraviolet (UV) light exposure of modules showing abnormal current-voltage behavior. The ultraviolet exposure process improves the abnormal sensor readout data by placing the selected sensor side of the module directly under the UV light inside a controlled box. In addition to laboratory testing and ultraviolet experiments, I developed a Python-based data tool that connects to a module database and allows selected testing conditions and module information to be retrieved and displayed efficiently. These different testing procedures, experimental processes, and computational tools support the broader goal of identifying module issues and improving modules that will be used in the CMS Outer Tracker Phase-2 Upgrade.

Siddiqui, Hooriya [DuPage Coll.] (ORCID:0009000151↗
DOE OSTI2026

Quality Control of Silicon Sensor Modules for Particle Detectors

The High-Luminosity Large Hadron Collider (HL-LHC) will produce a higher rate of particle collisions than the current Large Hadron Collider (LHC), requiring significant upgrades to the Compact Muon Solenoid (CMS) to handle the increased amount of data. An important upgrade is the Phase-2 Outer Tracker Upgrade, which consists of 13,000 silicon sensor modules made of two parallel silicon sensors and readout electronics. These modules undergo careful quality control checks both during and after module assembly to ensure precise and reliable detector performance. This project focuses on precision testing for quality control of silicon sensor modules at Fermilab. Hands-on work includes visual inspection, current-voltage testing, module testing, and ultraviolet (UV) light exposure of modules showing abnormal current-voltage behavior. The ultraviolet exposure process improves the abnormal sensor readout data by placing the selected sensor side of the module directly under the UV light inside a controlled box. In addition to laboratory testing and ultraviolet experiments, I developed a Python-based data tool that connects to a module database and allows selected testing conditions and module information to be retrieved and displayed efficiently. These different testing procedures, experimental processes, and computational tools support the broader goal of identifying module issues and improving modules that will be used in the CMS Outer Tracker Phase-2 Upgrade.

Siddiqui, Hooriya [DuPage Coll.; Fermilab] (ORCID:↗
DOE OSTI2026

Evaluation of 3D pixel silicon sensors for the CMS Phase-2 Inner Tracker

The high-luminosity upgrade of the CERN LHC requires the replacement of the CMS tracking detector to cope with the increased radiation fluence while maintaining its excellent performance. An extensive R&D program, aiming at using 3D pixel silicon sensors in the innermost barrel layer of the detector, has been carried out by CMS in collaboration with the FBK (Trento, Italy) and CNM (Barcelona, Spain) foundries. The sensors will feature a pixel cell size of 25 × 100 µm 2 , with a centrally located electrode connected to the readout chip. The sensors are read out by the RD53A and CROCv1 chips, developed in 65 nm CMOS technology by the RD53 Collaboration, a joint effort between the ATLAS and CMS groups. This paper reports the results achieved in beam test experiments before and after irradiation, up to a fluence of approximately 2 . 6 × 1 0 16 n eq /cm 2 . Measurements of assemblies irradiated to a fluence of 1 × 10 16 n˙eq/cm 2 show a hit detection efficiency higher than 96% at normal incidence, with fewer than 2% of channels masked, across a bias voltage range greater than 50 V . Even after irradiation to a higher fluence of 1.6 × 10 16 n˙eq/cm 2 , similar performance is maintained over a bias voltage range of 30 V , remaining well within CMS requirements.

3D pixel↗
DOE OSTI2025

Charge collection efficiency of diamond and silicon sensors irradiated with alpha particles

To evaluate the viability of using semiconductors as sensor materials in a detector for the Associated Particle Imaging technique, the radiation hardness of silicon and diamond diodes to alpha particles has been assessed. Here, the detector lifetimes for both silicon and diamond sensors were measured under the prolonged exposure to alpha particles emitted by an 241 Am source. The silicon detector was exposed to alpha radiation for approximately two months, reaching an accumulated fluence of ~ 1.5 x 10 12 α cm –2 . Additionally, by using a high purity single-crystal diamond with coplanar electrodes operating with full charge collection, the diamond detector response was measured over approximately ten months reaching an accumulated fluence of over 6 x 10 12 α cm –2 cm.

47 OTHER INSTRUMENTATION↗
NASA NTRS1991

Low-Thermal-Conduction Links For Silicon Sensors

Simple method of texturing surface of silicon reduces thermal conductivities of links in silicon x-ray calorimeters and infrared bolometers. Gives links high density of phonon scattering sites reducing conduction of heat. Links made shorter and more robust. Used in making x-ray calorimeters and infrared bolometers. Applicable to any microelectronic device in which high degree of thermal isolation needed.

Mott, D. Brent↗
NASA NTRS1994

The Development of Silicon Carbide Based Hydrogen and Hydrocarbon Sensors

Silicon carbide is a high temperature electronic material. Its potential for development of chemical sensors in a high temperature environment has not been explored. The objective of this study is to use silicon carbide as the substrate material for the construction of chemical sensors for high temperature applications. Sensors for the detection of hydrogen and hydrocarbon are developed in this program under the auspices of Lewis Research Center, NASA. Metal-semiconductor or metal-insulator-semiconductor structures are used in this development. Specifically, using palladium-silicon carbide Schottky diodes as gas sensors in the temperature range of 100 to 400 C are designed, fabricated and assessed. The effect of heat treatment on the Pd-SiC Schottky diode is examined. Operation of the sensors at 400 C demonstrate sensitivity of the sensor to hydrogen and hydrocarbons. Substantial progress has been made in this study and we believe that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures. However, the long term stability and operational life of the sensor need to be assessed. This aspect is an important part of our future continuing investigation.

Liu, Chung-Chiun↗
NASA NTRS1995

Applications of Silicon Carbide for High Temperature Electronics and Sensors

Silicon carbide (SiC) is a wide bandgap material that shows great promise in high-power and high temperature electronics applications because of its high thermal conductivity and high breakdown electrical field. The excellent physical and electronic properties of SiC allows the fabrication of devices that can operate at higher temperatures and power levels than devices produced from either silicon or GaAs. Although modern electronics depends primarily upon silicon based devices, this material is not capable of handling may special requirements. Devices which operate at high speeds, at high power levels and are to be used in extreme environments at high temperatures and high radiation levels need other materials with wider bandgaps than that of silicon. Many space and terrestrial applications also have a requirement for wide bandgap materials. SiC also has great potential for high power and frequency operation due to a high saturated drift velocity. The wide bandgap allows for unique optoelectronic applications, that include blue light emitting diodes and ultraviolet photodetectors. New areas involving gas sensing and telecommunications offer significant promise. Overall, the properties of SiC make it one of the best prospects for extending the capabilities and operational regimes of the current semiconductor device technology.

Silicon Carbide↗
DOE OSTI2023

The Pixel Luminosity Telescope: a detector for luminosity measurement at CMS using silicon pixel sensors

The Pixel Luminosity Telescope is a silicon pixel detector dedicated to luminosity measurement at the CMS experiment at the LHC. It is located approximately 1.75 m from the interaction point and arranged into 16 “telescopes”, with eight telescopes installed around the beam pipe at either end of the detector and each telescope composed of three individual silicon sensor planes. The per-bunch instantaneous luminosity is measured by counting events where all three planes in the telescope register a hit, using a special readout at the full LHC bunch-crossing rate of 40 MHz. The full pixel information is read out at a lower rate and can be used to determine calibrations, corrections, and systematic uncertainties for the online and offline measurements. This paper details the commissioning, operational history, and performance of the detector during Run 2 (2015–18) of the LHC, as well as preparations for Run 3, which will begin in 2022.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Neutron irradiation and electrical characterisation of the first 8” silicon pad sensor prototypes for the CMS calorimeter endcap upgrade

As part of its HL-LHC upgrade program, the CMS collaboration is replacing its existing endcap calorimeters with a high-granularity calorimeter (CE). The new calorimeter is a sampling calorimeter with unprecedented transverse and longitudinal readout for both electromagnetic and hadronic compartments. Due to its compactness, intrinsic time resolution, and radiation hardness, silicon has been chosen as active material for the regions exposed to higher radiation levels. The silicon sensors are fabricated as 20 cm (8”) wide hexagonal wafers and are segmented into several hundred pads which are read out individually. As part of the sensor qualification strategy, 8” sensor irradiation with neutrons has been conducted at the Rhode Island Nuclear Science Center (RINSC) and followed by their electrical characterisation in 2020-21. The completion of this important milestone in the CE's R&D program is documented in this paper and it provides detailed account of the associated infrastructure and procedures.The results on the electrical properties of the irradiated CE silicon sensors are presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1997

SiC-Based Schottky Diode Gas Sensors

Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

Hunter, Gary W.↗
NASA NTRS2002

Directionally Sensitive Silicon Radiation Sensor (VCELL)

Sensors are a mission critical element in many NASA programs and require some very unique properties such as small size, low power, high reliability, low weight. Low cost sensors offer the possibility of technology transfer to the public domain for commercial applications. One sensor application that is important to many NASA programs is the ability to point at a radiation source, such as the sun. Such sensors may be an integral part of the guidance and control systems in space platforms and in remote exploratory vehicles. Sun/solar pointing is also important for ground-based systems such as solar arrays. These systems are not required to be small and lightweight. However, if a sensor with a sun pointing capability was developed that is very small, rugged, lightweight and at the same time low cost, it certainly could be used in existing and perhaps many new ground based applications. The objective of the VCELL (Directionally Sensitive Silicon Radiation Sensor) research is to develop a new and very unique silicon based directionally sensitive radiation sensor which can be fabricated using conventional monolithic IC technologies and which will meet the above requirements. The proposed sensor is a novel silicon chip that is directionally sensitive to incident radiation, providing azimuth and elevation information on the incident radiation. The resulting sensor chip will be appropriate for integration into a silicon IC or useful in a hybrid structure to be interfaced with a standard IEEE 1451 bus interface IC to create an Intelligent Sensor. It is presently estimated that it will require about three man-years of effort to complete the VCELL research and development. This includes the optical, electrical, mechanical and silicon fabrication and testing as well as computer simulations and theoretical analysis and modeling including testing in simulated space environments. This report summarizes the sensor research completed this summer as part of the Summer Faculty Fellowship Program. The primary effort was focused on activity necessary to fabricate prototype sensor.

Koy B. Cook↗
NASA NTRS1989

Piezoresistive silicon pressure sensors in cryogenic environment

This paper presents data on low-temperature measurements of silicon pressure sensors. It was found that both the piezoresistance coefficients and the charge-carrier mobility increase with decreasing temperature. For lightly doped semiconductor materials, the density of free charge carriers decreases with temperature and can freeze out eventually. However, the effect of carrier freeze-out can be minimized by increasing the impurity content to higher levels, at which the temperature dependency of piezoresistance coefficients is reduced. An impurity density of 1 x 10 to the 19th/cu cm was found to be optimal for cryogenic applications of pressure sensor dies.

Kahng, Seun K.↗
NASA NTRS2007

Silicon Carbide Sensors and Electronics for Harsh Environment Applications

Silicon carbide (SiC) semiconductor has been studied for electronic and sensing applications in extreme environment (high temperature, extreme vibration, harsh chemical media, and high radiation) that is beyond the capability of conventional semiconductors such as silicon. This is due to its near inert chemistry, superior thermomechanical and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

Evans, Laura J.↗
NASA NTRS1980

A high frequency silicon pressure sensor

Theoretical and design considerations as well as fabrication and experimental work involved in the development of high-frequency silicon pressure sensors with an ultra-small diaphragm are discussed. A sensor is presented with a rectangular diaphragm of 0.0127 cm x 0.0254 cm x 1.06 micron; the sensor has a natural frequency of 625 kHz and a sensitivity of 0.82 mv/v-psi. High-frequency results from shock tube testing and low-frequency (less than 50 kHz) comparison with microphones are given.

Kahng, S. K.↗