GaAs based Terahertz sources for space applications: challenges and prospects
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Schottky diodes↗
Engineering topics
Samoska, L.
Publications and source records attributed to Samoska, L..
Frequency-controlled sources of far-infrared radiation for spaceborne applications
In this paper, we address the needs of the FIR space-flight community, providing an introductory-level treatment of the common heterodyne receiver configurations and the state of technology for various front-end components.
far-infrared terahertz oscillator frequency source↗
Monolithic Power Amplifiers Covering 70-115 GHz
A number of monolithic W-band power amplifiers have been developed for local oscillators of the Far Infrared and Sub-millimeter Telescope.
power amplifiers monolithic microwave integrated c↗
High Performance MMICs with Submillimeter Wave InP-based HEMTs
This paper presents some recently developed MMICs based on a 0.1 meu gate-length InAlAs/InGaAs/InP HEMT process with an fmax above 600 GHz.
millimeter-wave power amplifiers InP HEMTS↗
MMIC Power Amplifiers as Local Oscillator Drivers for FIRST
The Heterodyne Instrument (HIFI) for the Far-Infrared and Sub-millimeter Telescope (FIRST) requires local oscillators well into the terahertz frequency range.
power↗
A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-based HEMT
We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds.
amplifies↗
MMIC Power Amplifier Chip Set Developed for 70-115 GHz
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MMIC power amplifier THz range HEMT process↗
160-190 GHz Monolithic Low Noise Amplifiers
This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07 meu pseudomorphic (PM) InAIAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process.
low↗
On-Wafer Testing of Circuits Through 220 GHz
We have jointly developed the capability to perform on-wafer s-parameter and noise figure measurements through 220 GHz.
MMIC↗
A 90 GHz Amplifier Assembled Using Flip-Chip Technology
This letter reports the performance of a novel single-stage W-band amplifier fabricated utilizing flip-chip bump-bonding. We have bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) device onto a separately fabricated passive circuit having a GaAs substrate.
FET amplifiers Millimeter wave FETs bump-bonding m↗
An InP HEMT MMIC LNA with 7.2 dB Gain at 190 GHz
We present the highest frequency performance of any solid state MMIC amplifier.
HEMT↗
InP HEMT MMICs for Radiometer Applications
We present results of developments of low noise millimeter wave receivers for space applications utilizing InP HEMT monolithic microwave integrated circuts (MMICs).
low noise millimeter wave receivers InP HEMT monol↗
160-190 GHz Monolithic Low Noise Amplifiers
This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07-microns pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal gain of 9 dB was measured at 188 GHz for the first LNA with a 3-dB bandwidth from 164 to 192 GHz while the second LNA has achieved over 6-dB gain from 142 to 180 GHz. The same design (second LNA) was also fabricated with 0.08-micron gate and a wet etch process, showing a small signal gain of 6 dB with noise figure 6 dB. All the measurement results were obtained via on-wafer probing. The LNA noise measurement at 170 GHz is also the first attempt at this frequency.
Kok, Y. L.↗