Search NASA⌕ Search

SEARCH · Search NASA

Results for “SEMICONDUCTOR DEVICE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Radiation damage of germanium detectors

Energetic particles can produce interstitial-vacancy pairs in a crystal by knocking the atoms from their normal positions. Detectors are unique among semiconductor devices in depending on very low concentrations of electrically active impurities, and also on efficient transport of holes and electrons over relatively large distances. Because the dense regions of damage produced by energetic particles may result in donors and/or acceptors, and also provide trapping sites for holes and electrons, detectors are very sensitive to radiation damage. In addition to these effects occurring within the detector, radiation may also change the characteristics of the exposed surfaces causing unpredictable effects on the detector leakage current. Radiation-induced surface degradation has rarely, if ever, been observed for germanium detectors. The possibility of minimizing hole trapping in charge collection by the use of a high-purity germanium coaxial detector configured with the p (+) contact on the coaxial periphery is discussed.

Pehl, R. H.↗
NASA NTRS1980

Improved vapor-growth technique for III-V compound lasers

Vapor Growth technical of multilayered semiconductor devices based on elements in groups 3, 4, and 5 such as transmission photo cathodes and heterojunction lasers, reduces thermal decomposition and improves performance. In addition technique allows fabrication of GaP/GaAsP/InGaP, visable CW lasers through reduction of thermal decomposition.

Bujocchi, C. J.↗
NASA NTRS1979

Diode step stress program for JANTX1N5554

Data were compiled for the purpose of evaluating the effect of power/temperature step stress when applied to a variety of semiconductor devices. The switching diode JANTX1N5554 is examined.

Source record↗
NASA NTRS1979

Transistor step stress testing program for JANTX2N3637

Data for the purpose of evaluating the effect of power/temperature step stress when applied to a variety of semiconductor devices are presented. The transistor JANTX2N3637 manufactured by Transitron and Motorola is studied. A total of 48 samples from Transitron and 41 samples from Motorola were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. Results are reported.

Source record↗
NASA NTRS1979

Diode step stress program for JANTX1N4570A

The effect of power/temperature step stress when applied to a variety of semiconductor devices was evaluated. Performance of the zener diode JANTX1N4570A manufactured by Siemens and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process outlined in Table 1. In addition, two control sample units were maintained for verification of the electrical parametric testing.

Source record↗
NASA NTRS1979

Diode step stress program for JANTX1N649-1

The effect of power/temperature step stress when applied to a variety of semiconductor devices is evaluated. A total of 48 samples were submitted to be processed. Control sample units were maintained for verification of the electrical parametric testing. The test circuit was used to power all of the test devices during the power/temperature stress conditions.

Source record↗
NASA NTRS1969

Method for the preparation of inorganic single crystal and polycrystalline electronic materials

Large area, semiconductor crystals selected from group 3-5 compounds and alloys are provided for semiconductor device fabrication by the use of a selective etching operation which completely removes the substrate on which the desired crystal was deposited. The substrate, selected from the same group as the single crystal, has a higher solution rate than the epitaxial single crystal which is essentially unaffected by the etching solution. The preparation of gallium phosphide single crystals using a gallium arsenide substrate and a concentrated nitric acid etching solution is described.

Groves, W. O.↗
NASA NTRS1980

JANTX2N2920 Dual transistor

Report describes effects of power and temperature overstress on Fairchild and National Semiconductor devices. 160 hour temperature stress was only test to cause notable damage. Loss of gain is principal failure mode.

Source record↗
NASA NTRS1979

InP and GaAs characterization with variable stoichiometry obtained by molecular spray

Both InP and GaAs surfaces were studied in parallel. A molecular spray technique was used to obtain two semiconductor surfaces with different superficial compositions. The structures of these surfaces were examined by electron diffraction. Electron energy loss was measured spectroscopically in order to determine surface electrical characteristics. The results are used to support conclusions relative to the role of surface composition in establishing a Schottky barrier effect in semiconductor devices.

Massies, J.↗
NASA NTRS1982

Capacitively-Heated Fluidized Bed

Fluidized-bed chamber in which particles in bed are capacitively heated produces high yields of polycrystalline silicon for semiconductor devices. Deposition of unrecoverable silicon on chamber wall is reduced, and amount of recoverable silicon depositing on seed particles in bed is increased. Particles also have a size and density suitable for direct handling without consolidation, unlike silicon dust produced in heated-wall chambers.

Mchale, E. J.↗
NASA NTRS1983

Solid State Circuits for Cryogenic Operation

Tests confirm operation of five commercial semiconductor devices at cryogenic temperatures. The five devices - one tunnel diode, one field-effect transistor, and three CMOS integrated circuits - all perform well in circuits immersed in liquid-helium bath. For some tests, bath temperature was reduced to 1,25K by pumping.

Petrac, D.↗
NASA NTRS1981

Whatever happened to silicon carbide

The progress made in silicon carbide semiconductor devices in the 1955 to 1975 time frame is examined and reasons are given for the present lack of interest in the material. Its physical and chemical properties and methods of preparation are discussed. Fabrication techniques and the characteristics of silicon carbide devices are reviewed. It is concluded that a combination of economic factors and the lack of progress in fabrication techniques leaves no viable market for SiC devices in the near future.

Campbell, R. B.↗
NASA NTRS1982

Lightning protection of wind turbines

Possible damages to wind turbine components due to lightning strikes are discussed and means to prevent the damage are presented. A low resistance path to the ground is noted to be essential for any turbine system, including metal paths on nonmetal blades to conduct the strike. Surge arrestors are necessary to protect against overvoltages both from utility lines in normal operation and against lightning damage to control equipment and contactors in the generator. MOS structures are susceptible to static discharge injury, as are other semiconductor devices, and must be protected by the presence of static protection circuitry. It is recommended that the electronics be analyzed for the circuit transient response to a lightning waveform, to induced and dc current injection, that input/output leads be shielded, everything be grounded, and lightning-resistant components be chosen early in the design phase.

Dodd, C. W.↗
NASA NTRS1983

Near-field measurement facility plans at Lewis Research Center

The direction of future antenna technology will be toward antennas which are large, both physically and electrically, will operate at frequencies up to 60 GHz, and are non-reciprocal and complex, implementing multiple-beam and scanning beam concepts and monolithic semiconductor devices and techniques. The acquisition of accurate antenna performance measurements is a critical part of the advanced antenna research program and represents a substantial antenna measurement technology challenge, considering the special characteristics of future spacecraft communications antennas. Comparison of various antenna testing techniques and their relative advantages and disadvantages shows that the near-field approach is necessary to meet immediate and long-term testing requirements. The LeRC facilities, the 22 ft x 22 ft horizontal antenna boresight planar scanner and the 60 ft x 60 ft vertical antenna boresight plant scanner (with a 60 GHz frequency and D/lamdba = 3000 electrical size capabilities), will meet future program testing requirements.

Sharp, R. G.↗
NASA NTRS1983

Study of relationships of material properties and high efficiency solar cell performance on material composition

The performance improvements obtainable from extending the traditionally thin back-surface-field (BSF) layer deep into the base of silicon solar cells under terrestrial solar illumination (AM1) are analyzed. This extended BSF cell is also known as the back-drift-field cell. About 100 silicon cells were analyzed, each with a different emitter or base dopant impurity distribution whose selection was based on physically anticipated improvements. The four principal performance parameters (the open-circuit voltage, the short-circuit current, the fill factor, and the maximum efficiency) are computed using a FORTRAN program, called Circuit Technique for Semiconductor-device Analysis, CTSA, which numerically solves the six Shockley Equations under AM1 solar illumination at 88.92 mW/cm, at an optimum cell thickness of 50 um. The results show that very significant performance improvements can be realized by extending the BSF layer thickness from 2 um (18% efficiency) to 40 um (20% efficiency).

Sah, C. T.↗
NASA NTRS1982

The dependence of single event upset on proton energy /15-590 MeV/

Low earth orbit satellite and Jupiter orbiter probe semiconductor devices may incur soft errors or single event upsets, manifested as bit flips, during exposure to such nuclear particles or heavy ions as trapped protons with energies ranging up to 1000 MeV. Experimental data is given on the average proton fluence needed to cause a bit flip as a function of proton energy for isoplanar bipolar TTL RAMs. Error dependence data shape and threshold energy can be related to the existing body of theoretical data on energy deposition following proton nuclear reactions. Experimental data also show that the relative cross sectional amplitude for functionally identical devices can be related to the device's power consumption.

Nichols, D. K.↗