SEARCH · Search NASA

Results for “Photolithography”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2

All sources NASA NTRS DOE OSTI

NASA NTRS1979

A gas chromatographic air analyzer fabricated on a silicon wafer

A miniature gas analysis system has been built based on the principles of gas chromatography (GC). The major components are fabricated in silicon using photolithography and chemical etching techniques, which allows size reductions of nearly three orders of magnitude compared to conventional laboratory instruments. The chromatography system consists of a sample injection valve and a 1.5-m-long separating capillary column, which are fabricated on a substrate silicon wafer. The output thermal conductivity detector is separately batch fabricated and integrably mounted on the substrate wafer. The theory of gas chromatography has been used to optimize the performance of the sensor so that separations of gaseous hydrocarbon mixtures are performed in less than 10 s. The system is expected to find application in the areas of portable ambient air quality monitors, implanted biological experiments, and planetary probes.

Terry, S. C.↗

NASA NTRS1980

Grid polarizers for infrared Fourier spectrometers

Infrared grid polarizers consisting of copper lines with a 3.6-micron grid constant on a 4-micron-thick Mylar polyester substrate have been prepared by the techniques of photolithography and sputter-etching. Their polarization properties have been measured and found to be suitable for use at infrared frequencies below 700/cm. The polarizers have been used to extend the useful frequency range of a Martin-Puplett polarizing interferometer designed for Fourier transform spectroscopy. The efficiency of the interferometer has been measured over a frequency range from 50 to 700/cm and compared to that of a conventional Michelson interferometer. The results are shown to be consistent with the measured properties of the polarizers. Methods are suggested for improving the efficiency of a Martin-Puplett interferometer which employs these polarizers.

Challener, W. A.↗

NASA NTRS1978

A study of trends and techniques for space base electronics

Furnaces and photolithography related equipment were applied to experiments on double layer metal. The double layer metal activity emphasized wet chemistry techniques. By incorporating the following techniques: (1) ultrasonic etching of the vias; (2) premetal clean using a modified buffered hydrogen fluoride; (3) phosphorus doped vapor; and (4) extended sintering, yields of 98 percent were obtained using the standard test pattern. The two dimensional modeling problems have stemmed from, alternately, instability and too much computation time to achieve convergence.

Trotter, J. D.↗

NASA NTRS1979

Trends and Techniques for Space Base Electronics

Simulations of various phosphorus and boron diffusions in SOS were completed and a sputtering system, furnaces, and photolithography related equipment were set up. Double layer metal experiments initially utilized wet chemistry techniques. By incorporating ultrasonic etching of the vias, premetal cleaning a modified buffered HF, phosphorus doped vapox, and extended sintering, yields of 98% were obtained using the standard test pattern. A two dimensional modeling program was written for simulating short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide silicon interface. Although the program is incomplete, the two dimensional Poisson equation for the potential distribution was achieved. The status of other Z-D MOSFET simulation programs is summarized.

Trotter, J. D.↗

NASA NTRS1983

RF Sputtering of Gold Contacts On Niobium

Reliable gold contacts are deposited on niobium by combination of RF sputtering and photolithography. Process results in structures having gold only where desired for electrical contact. Contacts are stable under repeated cycling from room temperature to 4.2 K and show room-temperature contact resistance as much as 40 percent below indium contacts made by thermalcompression bonding.

Barr, D. W.↗

NASA NTRS1982

Self-heated thermocouples for far-infrared detection

A novel self-heated Bi-Sb thermocouple for far-infrared detection has been developed. The detector is suitable for integration with monolithic antennas and imaging arrays. The device is fabricated in a single photolithography masking step using a photoresist-bridge technique. This bridge technique has also been used to make microbolometers with lower 1/f noise than those made by two conventional masking steps. The thermocouples have a noise equivalent power of 7 x 10 to the -10th W/sq rt of Hz and a 3-dB frequency response of 150 kHz.

Neikirk, D. P.↗

NASA NTRS1981

Fabrication of multijunction high voltage concentrator solar cells by integrated circuit technology

Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.

Valco, G. J.↗

NASA NTRS1982

Lateral epitaxial overgowth of GaAs by organometallic chemical vapor deposition

Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine, without the use of HCl, was used to deposit GaAs on substrates prepared by coating (110) GaAs wafers with SiO2, then using photolithography to open narrow stripes in the oxide. Lateral overgrowth was seeded by epitaxial deposits formed on the GaAs surfaces exposed by the stripe openings. The extent of lateral overgrowth was investigated as a function of stripe orientation and growth temperature. Ratios of lateral to vertical growth rates greater than five have been obtained. The lateral growth is due to surface-kinetic control for the two-dimensional growth geometry studied. A continuous epitaxial GaAs layer 3 microns thick has been grown over a patterned mask on a GaAs substrate and then cleaved from the substrate.

Gale, R. P.↗

NASA NTRS1984

IC Fabrication Methods Improve Laser Diodes

Family of high-performance, tunable diode lasers developed for use as local oscillators in passive laser heterodyne spectrometer. Diodes fabricated using standard IC processes include photolithography, selective etching and vacuum deposition of metals and insulators. Packaging refinements improved thermal-cycling characteristics of diodes and increased room-temperature shelf life.

Miller, M.↗

NASA NTRS1982

Planar multijunction high voltage solar cell chip

A new innovative planar multijunction solar cell chip for concentrated sunlight applications is proposed. The chip consists of many voltage-generating regions, called unit cells, which are connected in series within a single silicon wafer, thereby providing a high open-circuit voltage at multiple sun illumination levels. The unit cells are fabricated on 75 micron thick p-type single crystal silicon substrate. Each chip consists of 1.42 x 9.63 mm n(+)/p collecting junctions on the back of the wafer, while the illuminated front surface area is divided into 0.3 micron deep n(+) regions. The fabrication sequence includes standard degreasing and cleaning procedures, double-sided alignment photomasking, introduction of boron and phosphorus impurities, and photolithography. The open circuit voltage of the chip increased rapidly with illumination up to about 4 AM1 suns, and then began to saturate at the sum of the individual unit cell voltages of 3.5 above 4 AM1 suns. A short circuit density per unit cell of 300 mA/sq cm at 20 AM1 suns was observed.

Valco, G. J.↗

NASA NTRS1982

High density circuit technology, part 3

Dry processing - both etching and deposition - and present/future trends in semiconductor technology are discussed. In addition to a description of the basic apparatus, terminology, advantages, glow discharge phenomena, gas-surface chemistries, and key operational parameters for both dry etching and plasma deposition processes, a comprehensive survey of dry processing equipment (via vendor listing) is also included. The following topics are also discussed: fine-line photolithography, low-temperature processing, packaging for dense VLSI die, the role of integrated optics, and VLSI and technology innovations.

Wade, T. E.↗

NASA NTRS1985

New high-efficiency silicon solar cells

A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit voltage and efficiency for flat-plate terrestrial photovoltaic applications. This deviates from past designs, where either the entire front surface of the cell is covered by a planar junction or the surface is textured before junction formation, which results in an even greater (up to 70%) junction area. The heavily doped front region and the junction space charge region are potential areas of high recombination for generated and injected minority carriers. The design presented reduces junction area by spreading equidiameter dot junctions across the surface of the cell, spaced about a diffusion length or less from each other. Various dot diameters and spacings allowed variations in total junction area. A simplified analysis was done to obtain a first-order design optimization. Efficiencies of up to 19% can be obtained. Cell fabrication involved extra masking steps for selective junction diffusion, and made surface passivation a key element in obtaining good collection. It also involved photolithography, with line widths down to microns. A method is demonstrated for achieving potentially high open-circuit voltages and solar-cell efficiencies.

Daud, T.↗

NASA NTRS1985

Gas chromatography: Possible application of advanced instrumentation developed for solar system exploration to space station cabin atmospheres

Gas chromatography (GC) technology was developed for flight experiments in solar system exploration. The GC is a powerful analytical technique with simple devices separating individual components from complex mixtures to make very sensitive quantitative and qualitative measurements. It monitors samples containing mixtures of fixed gases and volatile organic molecules. The GC was used on the Viking mission in support of life detection experiments and on the Pioneer Venus Large Probe to determine the composition of the venusian atmosphere. A flight GC is under development to study the progress and extent of STS astronaut denitrogenation prior to extravehicular activity. Advanced flight GC concepts and systems for future solar system exploration are also studied. Studies include miniature ionization detectors and associated control systems capable of detecting from ppb up to 100% concentration levels. Further miniaturization is investigated using photolithography and controlled chemical etching in silicon wafers. Novel concepts such as ion mobility drift spectroscopy and multiplex gas chromatography are also developed for future flight experiments. These powerful analytical concepts and associated hardware are ideal for the monitoring of cabin atmospheres containing potentially dangerous volatile compounds.

Carle, G. C.↗

NASA NTRS1986

Metalizing Solar Cells by Selective Electroplating

Contact patterns traced by laser scanning. Conductor paths deposited on silicon solar-cell wafers by laser irradiation followed by electroplating. Laser-assisted metalization technique offers better resolution and lower contact resistance than does conventional metalization by screen printing. At the same time, less expensive than metalization with masks and photolithography.

Dutta, S.↗

NASA NTRS1986

Slow crack growth measurement using an electrical grid

Photolithography was used to produce a resistance grid on the surface of a DCB fracture specimen. The grid line spacings were 10 microns over a distance of 2 cm. Slow crack growth was measured on soda-lime-silica glass. At low values of K(I) (0.3 to 0.4 MPa.sq r + m, increased. Equations are given for the design of grids. The grid technique could be used to measure very slow crack growth at high temperature with appropriate compatible metal-ceramic materials.

Martin, D. J.↗

NASA NTRS1987

Ink jet assisted metallization for low cost flat plate solar cells

Computer-controlled ink-jet-assisted metallization of the front surface of solar cells with metalorganic silver inks offers a maskless alternative method to conventional photolithography and screen printing. This method can provide low cost, fine resolution, reduced process complexity, avoidance of degradation of the p-n junction by firing at lower temperature, and uniform line film on rough surface of solar cells. The metallization process involves belt furnace firing and thermal spiking. With multilayer ink jet printing and firing, solar cells of about 5-6 percent efficiency without antireflection (AR) coating can be produced. With a titanium thin-film underlayer as an adhesion promoter, solar cells of average efficiency 8.08 percent without AR coating can be obtained. This efficiency value is approximately equal to that of thin-film solar cells of the same lot. Problems with regard to lower inorganic content of the inks and contact resistance are noted.

Teng, K. F.↗

NASA NTRS1989

Planar Antennas On Thick Dielectric Substrates

Features include ease of fabrication and wide range of operating frequencies. Planar antennas on thick dielectric substrates built for use at millimeter wavelengths from 40 to 400 GHZ. Antennas of this type quasi-optical structures, for which expensive, precisely machined waveguides not required. Made easily by standard photolithography and integrated with planar mixers or detectors to form arrays.

Lee, K. A.↗

NASA NTRS1988

Study of optical output couplers for submillimeter wavelength backward-wave oscillators (BWO's)

The machining of slow wave structures for high frequency backward-wave oscillators (BWO) is extremely difficult beyond 1 THz. Recently a microfabrication technique using photolithography and ion-beam assisted etching has been used to construct a prototype BWO operating at 200 to 265 GHz. The output coupler for such tubes remains a problem. Waveguides do not exist or are very lossy at the frequencies of interest (300 to 2000 GHz). This paper discusses several scaled experiments of optical output couplers for submillimeter BWOs. Various designs of planar antennas (Vivaldi horns) and lens-feed systems (Hyperhemispherical lens) were constructed and tested between 20 and 100 GHz using a spectrum analyzer. The lens system was also tested at 337 GHz using a CO2 pumped FIR laser.

Cook, Jerry D.↗