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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Power supply conditioning circuit

A power supply conditioning circuit that can reduce Periodic and Random Deviations (PARD) on the output voltages of dc power supplies to -150 dBV from dc to several KHz with no measurable periodic deviations is described. The PARD for a typical commercial low noise power supply is -74 dBV for frequencies above 20 Hz and is often much worse at frequencies below 20 Hz. The power supply conditioning circuit described here relies on the large differences in the dynamic impedances of a constant current diode and a zener diode to establish a dc voltage with low PARD. Power supplies with low PARD are especially important in circuitry involving ultrastable frequencies for the Deep Space Network.

Primas, L. E.↗
NASA NTRS1988

Checking Plumbing Connections Electrically

Ports identified by Zener-diode voltages. Electronic verification circuits assist in assembly of multiple-line plumbing by helping to ensure proper lines joined to proper input and output ports. Zener diode and electronic jack added to each fixture. Zener breakdown voltage is different for each port. When fixture makes fluid connection, also makes electrical connection. Zener breakdown voltage identifies line, port, or valve to which fluid line connected.

Chappel, Jerry L.↗
NASA NTRS1982

Spike-Free Automatic Level Control

New automatic-level-control circuit protects against signal "overshoot." Zener diodes and series capacitors prevent voltage spikes (caused by sudden increase in input level) from appearing at output. When spike voltage drops below breakdown voltage of Zener diodes, they turn off. Initial output level is determined by Zener breakdown voltage and capacitance of series capacitor.

Toole, P. C.↗
NASA NTRS1979

Voltage regulator for battery power source

A bipolar transistor in series with the battery as the control element also in series with a zener diode and a resistor is used to maintain a predetermined voltage until the battery voltage decays to very nearly the predetermined voltage. A field effect transistor between the base of the bipolar transistor and a junction between the zener diode and resistor regulates base current of the bipolar transistor, thereby regulating the conductivity of the bipolar transistor for control of the output voltage.

Black, J. M.↗
NASA NTRS1978

Diode step stress program, JANTX1N981B

Power/temperature step stress was applied to the Zener diode JANTX1N981B. Reliability of the device was determined. Control units were maintained for verification of the electrical parametric testing. Results are reported.

Source record↗
NASA NTRS1979

Diode step stress testing program for JANTX1N2989B

The effect of power/temperature step stress when applied to the zener diode JANTX2N2989 manufactured by Siemens and General Semiconductor is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parameteric testing.

Source record↗
NASA NTRS1979

Diode step stress testing program for JANTX1N3031B

The effect of power/temperature step stress when applied to the zener diode JANTX1N3031B manufactured by Siemens and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.

Source record↗
NASA NTRS1979

Diode step stress testing program for JANTX1N937b

The effect was investigated of power/temperature step stress when applied to the zener diode JANTX1N937B manufactured by Motorola and Siemens. Test results, and failure analyses are included.

Source record↗
NASA NTRS1979

Diode step stress testing program for JANTX1N972B

The effect was studied of power/temperature step stress when applied to the zener diode JANTX1N972B manufactured by Siemens and Motorola. The power/temperature stress tests are presented, and failure analyses are included.

Source record↗
NASA NTRS1979

Diode step stress testing program for JANTX1N3016B

The effect of power/temperature step stress when applied to a variety the zener diode JANTX2N3016B manufactured by Siemens and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.

Source record↗
NASA NTRS1979

Diode step stress program for JANTX1N2970b

Data for the purpose of evaluating the effect of power/temperature step stress was studied when applied to the zener diode JANTX1N2970B manufactured by Siemens and General Semiconductor, Inc. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. The tests for determining power/temperature stresses are described, and test results are discussed. Failure analyses for power stress, and temperature stress are presented.

Source record↗
NASA NTRS1979

Diode step stress program for JANTX1N4570A

The effect of power/temperature step stress when applied to a variety of semiconductor devices was evaluated. Performance of the zener diode JANTX1N4570A manufactured by Siemens and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process outlined in Table 1. In addition, two control sample units were maintained for verification of the electrical parametric testing.

Source record↗
NASA NTRS1983

FET commutated current-FED inverter

A shunt switch comprised of a field-effect transistor (Q.sub.1) is employed to commutate a current-fed inverter (10) using thyristors (SCR1, SCR2) or bijunction transistors (Q.sub.2, Q.sub.3) in a full bridge (1, 2, 3, 4) or half bridge (5, 6) and transformer (T.sub.1) configuration. In the case of thyristors, a tapped inverter (12) is employed to couple the inverter to a dc source to back bias the thyristors during commutation. Alternatively, a commutation power supply (20) may be employed for that purpse. Diodes (D.sub.1, D.sub.2) in series with some voltage dropping element (resistor R.sub.12 or resistors R.sub.1, R.sub.2 or Zener diodes D.sub.4, D.sub.5) are connected in parallel with the thyristors in the half bridge and transformer configuration to assure sharing the back bias voltage. A clamp circuit comprised of a winding (18) negatively coupled to the inductor and a diode (D.sub.3) return stored energy from the inductor to the power supply for efficient operation with buck or boost mode.

Rippel, Wally E.↗
DOE OSTI2024

A system identification approach for non-intrusive reduced order modeling of radiation-induced photocurrents

In this study, development of compact photocurrent models is currently dominated by analytical techniques that rely on physical assumptions to render the governing equations solvable in a closed form. Violation of these assumptions can reduce the accuracy of the models and/or limit their scope. In this paper we show that system identification of nonlinear state-space systems can serve as an alternative numerical basis for non-intrusive reduced order modeling of photocurrent effects. To that end we develop a compact gray box photocurrent model (GBPM) by using a state-space representation with a low-dimensional latent state equation that mimics a mathematical model for the response of an idealized class of devices to ionizing radiation. In so doing we obtain a model that learns the dynamics of a quantity of interest directly from its measurements without requiring snapshots of the internal device state or its discretized model, and can be inferred from very small data sets. To demonstrate the approach we train the GBPM using a small experimental data set for a Z5236 Zener diode and a small synthetic data set obtained by simulating a synthetic pn-junction device. We then compare the GBPMs with black box models trained on the same data and show that performance of the latter is limited by the size of the data set, while the former are able to achieve excellent performance in both the reproductive and the predictive regimes.

97 MATHEMATICS AND COMPUTING↗