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Results for “Metal Oxides”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Reactions between NO/+/ and metal atoms using magnetically confined afterglows

A new method of studying thermal energy ion-neutral collision processes involving nongaseous neutral atoms is described. A long magnetic field produced by a solenoid in a vacuum chamber confines a thermal-energy plasma generated by photoionization of gas at very low pressure. As the plasma moves toward the end of the field, it is crossed by a metal atom beam. Ionic products of ion-atom reactions are trapped by the field and both the reactant and product ions move to the end of the magnetic field where they are detected by a quadrupole mass filter. The cross sections for charge transfer between NO(+) and Na, Mg, Ca, and Sr and that for rearrangement between NO(+) and Ca have been obtained. The charge-transfer reaction is found strongly dominant over the rearrangement reaction that forms metallic oxide ions.

Lo, H. H.↗
NASA NTRS1977

The effect of delta T /oxidizing temperature minus cooling temperature/ on oxide spallation

Several alloys (one iron base and five nickel base) were cyclically oxidized in a series of tests in which the higher temperature (1100 or 1200 C) of the cycle was fixed at a level to allow ample oxidation in reasonable time and the lower temperature was variable to allow cycle temperature differences of up to 1400 C. For all nickel alloys, as delta T increased the extent of spallation increased. This effect was attributed to thermal expansion mismatches between the oxide and the nickel substrate. The FeCrAl alloy was not sensitive to delta T and resisted spalling at delta T levels to 1400 C. FeCrAl, and the Al2O3 scale which forms on it, have thermal expansion coefficients which are substantially more alike than any of the other oxide-metal combinations tested.

Deadmore, D. L.↗
NASA NTRS1978

Surface examination of small particles

Electron-microscopy specimen-preparation technique is used to study micron size particles. Process involves coating particles with vacuum-evaporated carbon, dissolving particles in solvent, then examining residue. Process is applicable to study of catalysts, nucleation and growth of metal oxides, and to determine chemical nature of lubricated surfaces after wear has occurred.

Buzek, B. C.↗
NASA NTRS1979

CMOS-array design-automation techniques

Thirty four page report discusses design of 4,096-bit complementary metal oxide semiconductor (CMOS) read-only memory (ROM). CMOSROM is either mask or laser programable. Report is divided into six sections; section one describes background of ROM chips; section two presents design goals for chip; section three discusses chip implementation and chip statistics; conclusions and recommendations are given in sections four thru six.

Feller, A.↗
NASA NTRS1979

All-ion-implantation process for integrated circuits

Simpler than diffusion fabrication, ion bombardment produces complementary-metal-oxide-semiconductor / silicon-on-sapphire (CMOS/SOS) circuits that are one-third faster. Ion implantation simplifies the integrated circuit fabrication procedure and produces circuits with uniform characteristics.

Woo, D. S.↗
NASA NTRS1977

The effects of the geosynchronous energetic particle radiation environment on spacecraft charging phenomena

The energetic electron environment at the geosynchronous orbit is responsible for a variety of adverse charging effects on spacecraft components. The most serious of these is the degradation and failure of a complementary-metal-oxide-semiconductor (CMOS) electronic components as a result of internal charge-buildup induced by the energetic electrons. Efforts to accurately determine the expected lifetime of these components in this orbit are hampered by the lack of detailed knowledge of the electron spectrum and intensity, particularly of the more penetrating energies greater than 1.5 MeV. This problem is illustrated through the calculation of the dose received by a CMOS device from the energetic electrons and associated bremsstrahlung as a function of aluminum shielding thickness using the NASA AE-6 and the Aerospace measured electron environments. Two computational codes which were found to be in good agreement were used to perform the calculations. For a given shielding thickness the dose received with the two radiation environments differ by as much as a factor of seven with a corresponding variation in lifetime of the CMOS.

Reagan, J. B.↗
NASA NTRS1977

Charge-flow structures as polymeric early-warning fire alarm devices

The charge-flow transistor (CFT) and its applications for fire detection and gas sensing were investigated. The utility of various thin film polymers as possible sensing materials was determined. One polymer, PAPA, showed promise as a relative humidity sensor; two others, PFI and PSB, were found to be particularly suitable for fire detection. The behavior of the charge-flow capacitor, which is basically a parallel-plate capacitor with a polymer-filled gap in the metallic tip electrode, was successfully modeled as an RC transmission line. Prototype charge-flow transistors were fabricated and tested. The effective threshold voltage of this metal oxide semiconductor was found to be dependent on whether surface or bulk conduction in the thin film was dominant. Fire tests with a PFI-coated CFT indicate good sensitivity to smouldering fires.

Sechen, C. M.↗
NASA NTRS1976

Single crystal and polycrystalline GaAs solar cells using AMOS technology

A description is given of current technology for fabricating single AMOS (antireflection-coated metal oxide semiconductor) solar cells, with attention given to thermal, plasma, and anodic oxidation, native oxide stripping, and X-ray photoelectron spectroscopy results. Some preliminary results are presented on the chemistry and electrical characterization of such cells, and the characteristics of cells fabricated on sliced polycrystalline GaAs wafers are examined. Consideration is also given to the recrystallization of evaporated Ge films for use as low-cost substrates for polycrystalline GaAs solar cells.

Stirn, R. J.↗
NASA NTRS1978

A Schottky-barrier solar cell on sliced polycrystalline GaAs

Antireflecting-metal-oxide-semiconductor (AMOS) technology has been applied to sliced wafers of polycrystalline GaAs having grain sizes of about 100 microns. Simulated AM1 sunlight efficiencies up to 14% were obtained, and studies using the scanning electron microscope showed that grain boundaries have a minimal effect on short-circuit current density. However, current-voltage characteristics show some influence on open-circuit voltage.

Yeh, Y. C. M.↗
NASA NTRS1979

CMOS circuit-fabrication handbook

Report describes complementary metal-oxide-semiconductor (CMOS) process used to fabricate integrated circuits at Marshall Space Flight Center. It also presents general discussions of circuit design, mask making packaging, and testing.

Bouldin, D. L.↗
NASA NTRS1980

CMOS analog switches for adaptive filters

Adaptive active low-pass filters incorporate CMOS (Complimentary Metal-Oxide Semiconductor) analog switches (such as 4066 switch) that reduce variation in switch resistance when filter is switched to any selected transfer function.

Dixon, C. E.↗
NASA NTRS1980

Measuring charge nonuniformity in MOS devices

Convenient method of determining inherent lateral charge non-uniformities along silicon dioxide/silicon interface of metal-oxide-semiconductor (MOS) employs rapid measurement of capacitance of interface as function of voltage at liquid nitrogen temperature. Charge distribution is extracted by fast-Fourier-transform analysis of capacitance voltage (C-V) measurement.

Maserjian, J.↗
NASA NTRS1980

Design rules for CMOS/SOS circuits

Report presents design rules for advanced-technology integrated circuits made by self-aligned silicongate complementary - metal - oxide - semiconductor/silicon-on-sapphir (CMOS/SOS) process.

Source record↗
NASA NTRS1980

CMOS/SOS processing

Report describes processes used in making complementary - metal - oxide - semiconductor/silicon-on-sapphire (CMOS/SOS) integrated circuits. Report lists processing steps ranging from initial preparation of sapphire wafers to final mapping of "good" and "bad" circuits on a wafer.

Ramondetta, P.↗
NASA NTRS1978

Ionized dopant concentrations at the heavily doped surface of a silicon solar cell

Data are combined with concentrations obtained by a bulk measurement method using successive layer removal with measurements of Hall effect and resistivity. From the MOS (metal-oxide-semiconductor) measurements it is found that the ionized dopant concentration N has the value (1.4 + or - 0.1) x 10 to the 20th power/cu cm at distances between 100 and 220 nm from the n(+) surface. The bulk measurement technique yields average values of N over layers whose thickness is 2000 nm. Results show that, at the higher concentrations encountered at the n(+) surface, the MOS C-V technique, when combined with a bulk measurement method, can be used to evaluate the effects of materials preparation methodologies on the surface and near surface concentrations of silicon cells.

Weinberg, I.↗
NASA NTRS1978

Catalysts for electrochemical generation of oxygen

Single crystal surfaces of platinum and gold and transition metal oxides of the spinel type were studied to find more effective catalysts for the electrolytic evolution of oxygen and to understand the mechanism and kinetics for the electrocatalysis in relation to the surface electronic and lattice properties of the catalyst. The single crystal studies involve the use of low energy electron diffraction (LEED) and Auger electron spectroscopy as complementary tools to the electrochemical measurements. Modifications to the transfer system and to the thin-layer electrochemical cell used to facilitate the transfer between the ultrahigh vacuum environment of the electron surface physics equipment and the electrochemical environment with a minimal possibility of changes in the surface structure, are described. The electrosorption underpotential deposition of Pb onto the Au(111), (100) and (110) single crystal surfaces with the thin-layer cell-LEED-Auger system is discussed as well as the synthesis of spinels for oxygen evolution studies.

Hagans, P.↗
NASA NTRS1979

Alkali-metal silicate binders and methods of manufacture

A paint binder is described which uses a potassium or sodium silicate dispersion having a silicon dioxide to alkali-metal oxide mol ratio of from 4.8:1 to 6.0:1. The binder exhibits stability during both manufacture and storage. The process of making the binder is predictable and repeatable and the binder may be made with inexpensive components. The high mol ratio is achieved with the inclusion of a silicon dioxide hydrogel. The binder, which also employs a silicone, is in the final form of a hydrogel sol.

Schutt, J. B.↗