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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Transister step stress testing program for JANTX2N3811

The effect was studied of power/temperature step stress when applied to the dual transistor JANTX2N3811 manufactured by Motorola and National Semiconductor. A total of 48 samples from Motorola and 47 from National Semiconductor was submitted to the processes. In addition, two control sample units were maintained for verification of the electrical parametric testing. The tests for determining power/temperature stresses are described, and test results are discussed. Failure analyses for power stress, and temperature stress are presented.

Source record↗
NASA NTRS1979

Transistor step stress testing program for JANTX2N2905A

The effect of power/temperature step stress when applied to the transistor JANTX2N2905A manufactured by Texas Instruments and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests outlined in Table 2 after completing the prior power/temperature step stress point.

Source record↗
NASA NTRS1979

Diode step stress testing program for JANTX1N759A

The effect of power/temperature step stress when applied to a variety of voltage regulating diodes manufactured by Texas Instruments and Siemens was investigated. Test requirements are described and results are tabulated. Failure modes are discussed.

Source record↗
NASA NTRS1979

Diode step stress testing program for JANTX1N3031B

The effect of power/temperature step stress when applied to the zener diode JANTX1N3031B manufactured by Siemens and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.

Source record↗
NASA NTRS1979

Transistor step stress testing program for JANTX2N4856

The effect of power/temperature step stress when applied to a field effect transistor JANTX2N4856 manufactured by Texas Instruments and Teledyne was evaluated. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control units were maintained for verification of the electrical parametric testing.

Source record↗
NASA NTRS1979

Diode step stress testing program for JANTX1N2989B

The effect of power/temperature step stress when applied to the zener diode JANTX2N2989 manufactured by Siemens and General Semiconductor is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parameteric testing.

Source record↗
NASA NTRS1979

Diode step stress testing program for JANTX1N5618

The effect of power/temperature step stress when applied to the switching diode JANTX1N5618 manufactured by Semtech and Micro Semiconductor is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.

Source record↗
NASA NTRS1979

Diode step stress testing program for JANTX1N3016B

The effect of power/temperature step stress when applied to a variety the zener diode JANTX2N3016B manufactured by Siemens and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.

Source record↗
NASA NTRS1979

Transistor step stress testing program for JANTX2N2484

The effect of power/temperature step stress when applied to the transistor JANTX2N2484, manufactured by Raytheon and Teledyne was evaluated. Forty-eight samples from each manufacturer were divided equally (16 per group) into three groups and submitted to the processes outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing.

Source record↗
NASA NTRS1979

Diode step stress testing program for JANTX1N937b

The effect was investigated of power/temperature step stress when applied to the zener diode JANTX1N937B manufactured by Motorola and Siemens. Test results, and failure analyses are included.

Source record↗
NASA NTRS1985

Accelerated stress testing of thin film solar cells: Development of test methods and preliminary results

If thin film cells are to be considered a viable option for terrestrial power generation their reliability attributes will need to be explored and confidence in their stability obtained through accelerated testing. Development of a thin film accelerated test program will be more difficult than was the case for crystalline cells because of the monolithic construction nature of the cells. Specially constructed test samples will need to be fabricated, requiring committment to the concept of accelerated testing by the manufacturers. A new test schedule appropriate to thin film cells will need to be developed which will be different from that used in connection with crystalline cells. Preliminary work has been started to seek thin film schedule variations to two of the simplest tests: unbiased temperature and unbiased temperature humidity. Still to be examined are tests which involve the passage of current during temperature and/or humidity stress, either by biasing in the forward (or reverse) directions or by the application of light during stress. Investigation of these current (voltage) accelerated tests will involve development of methods of reliably contacting the thin conductive films during stress.

Lathrop, J. W.↗
DOE OSTI2026

Extended Accelerated Stress Testing of Lamination-Free Edge-Sealed Photovoltaic Minimodules

Lamination-free minimodules are constructed with silicon solar cells between glass sheets and an edge seal of polyisobutylene and silicone. These samples are stressed using a repeated sequential testing sequence including ultraviolet-containing simulated solar spectrum light exposure at elevated temperature, damp heat, humidity freeze, and thermal cycling adapted from the International Electrotechnical Commission (IEC) TS 63209-2:2022. The minimodule performance throughout the stressing is characterized by flash testing and electroluminescence imaging. Results are compared to conventional laminated minimodules using the same type of solar cells. The lamination-free minimodules experience up to 8% power loss compared to roughly 3% for the laminated versions. However, those losses, dominated by current and fill factor, are caused by glass soiling and busbar ribbon separation on the cells. When glass is replaced and the stressed cells are contacted with probes bypassing the delaminated ribbons, the initial performance is recovered, and overall losses of the lamination-free samples become negligible.

14 SOLAR ENERGY↗
NASA NTRS1979

Transistor step stress testing program for JANTX2N3637

Data for the purpose of evaluating the effect of power/temperature step stress when applied to a variety of semiconductor devices are presented. The transistor JANTX2N3637 manufactured by Transitron and Motorola is studied. A total of 48 samples from Transitron and 41 samples from Motorola were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. Results are reported.

Source record↗
NASA NTRS1979

Diode step stress testing program for JANTX1n5420

Data compiled for the purpose of evaluating the effect of power/temperature step stress when applied to the diode JANTX1N5420 manufactured by Unitrode and Micro-Semiconductor is presented. A total of 48 samples from each manufacturer was submitted to the processes outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing.

Source record↗
NASA NTRSDate not supplied

Stress Testing of Chip Aluminum Polymer Capacitors

Layered aluminum polymer capacitors (APC) may be viable replacements to current chip tantalum capacitors due to their lower ESR, weight, and smaller size. So far, there is a lack of information regarding the reliability of these parts. Available technical literature is mostly related to the effect on humidity. Although APCs have a limited moisture resistance, it may be contained to the level sufficient for space applications. In this work, seven types of commercial APCs manufactured by four vendors and rated to voltages from 6.3 to 35 V were used to evaluate reliability of the parts under environmental stresses and highly accelerated life tests. Characteristics of the parts, including breakdown voltages, the level of anomalous charging currents (ACC), capacitance, DF, ESR and leakage currents were measured in the process of storage at high-temperatures (from 100 to 150 °C) and high humidity at 85 °C. Monitored highly accelerated life tests have been carried out at temperatures of 85 °C and 125 °C and voltages varying from 1.2 to 1.9 times the rated voltage. Degradation processes and reliability of APCs have been analyzed and compared to polymer tantalum capacitors.

Alexander Teverovsky↗