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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

On the development of an interactive resource information management system for analysis and display of spatiotemporal data

The recent availability of timely synoptic earth imagery from the Earth Resources Technology Satellites (ERTS) provides a wealth of information for the monitoring and management of vital natural resources. Formal language definitions and syntax interpretation algorithms were adapted to provide a flexible, computer information system for the maintenance of resource interpretation of imagery. These techniques are incorporated, together with image analysis functions, into an Interactive Resource Information Management and Analysis System, IRIMAS, which is implemented on a Texas Instruments 980A minicomputer system augmented with a dynamic color display for image presentation. A demonstration of system usage and recommendations for further system development are also included.

Schell, J. A.↗
NASA NTRS1975

Refinement and validation of two digital Microwave Landing System (MLS) theoretical models

Two digital microwave landing system theoretical models are considered which are generic models for the Doppler and scanning-beam frequency reference versions of the MLS. These models represent errors resulting from both system noise and discrete multipath. The data used for the validation effort were obtained from the Texas Instrument conventional scanning beam and the Hazeltine Doppler feasibility hardware versions of the MLS. Topics discussed include tape read software, time history plots, computation of power spectral density, smoothed power spectra, best-fit models, different equations for digital simulation, and discrete multipath errors.

Duff, W. G.↗
NASA NTRS1976

Accelerated test techniques for micro-circuits: Evaluation of high temperature (473 k - 573 K) accelerated life test techniques as effective microcircuit screening methods

The application of high temperature accelerated test techniques was shown to be an effective method of microcircuit defect screening. Comprehensive microcircuit evaluations and a series of high temperature (473 K to 573 K) life tests demonstrated that a freak or early failure population of surface contaminated devices could be completely screened in thirty two hours of test at an ambient temperature of 523 K. Equivalent screening at 398 K, as prescribed by current Military and NASA specifications, would have required in excess of 1,500 hours of test. All testing was accomplished with a Texas Instruments' 54L10, low power triple-3 input NAND gate manufactured with a titanium- tungsten (Ti-W), Gold (Au) metallization system. A number of design and/or manufacturing anomalies were also noted with the Ti-W, Au metallization system. Further study of the exact nature and cause(s) of these anomalies is recommended prior to the use of microcircuits with Ti-W, Au metallization in long life/high reliability applications. Photomicrographs of tested circuits are included.

Johnson, G. M.↗
NASA NTRS1977

Airborne thermography for crop water stress assessment

Aircraft overflights to obtain canopy temperatures of six differentially irrigated plots of durum wheat were made at Phoenix, Arizona on 1 and 29 April 1976. The data were acquired by a Texas Instruments model RS-25 infrared line scanner operating in the 8 to 14 micrometer bandpass region. Concurrently, plant water tension was measured on the ground with the Scholander pressure bomb technique. The results indicated that canopy temperatures acquired by aircraft about an hour and a half past solar noon correlated well with presunrise plant water tension - a parameter directly related to plant growth and development. The aircraft data also showed significant within-field canopy temperature variability, indicating the superiority of the synoptic view provided by aircraft over the more spotty view obtained by ground-operated infrared thermometers.

Millard, J. P.↗
NASA NTRS1980

JANTX/N759A voltage regulating diode

Diodes manyfactured by Texas Instruments and Siemens performed well in group I testing. Failure analysis shows that group II testing is most detrimental to both sample lots. Same failure mode of excessive I(sub) R leakage can be clearly seen in group III testing.

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NASA NTRS1979

Transistor step stress testing program for JANTX2N2905A

The effect of power/temperature step stress when applied to the transistor JANTX2N2905A manufactured by Texas Instruments and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests outlined in Table 2 after completing the prior power/temperature step stress point.

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NASA NTRS1979

Transistor step stress testing program for JANTX2N4856

The effect of power/temperature step stress when applied to a field effect transistor JANTX2N4856 manufactured by Texas Instruments and Teledyne was evaluated. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control units were maintained for verification of the electrical parametric testing.

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NASA NTRS1979

Transistor step stress program for JANTX2N2432A

Power/temperature step stress was applied to the transistor JANTX2N2432A manufactured by Crystalonics and Texas Instruments. A total of 48 samples from each manufacturer were submitted to the process outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests after completing the prior power/temperature step stress point.

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NASA NTRS1979

Transistor step stress program for JANTX2N2219A

Power/temperature step stress was applied to the dual transistor JANTX2N2219A manufactured by Texas Instruments and National Semiconductor. A total of 48 samples from each manufacturer were submitted to the process outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to electrical tests after completing the prior power/temperature step stress point.

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NASA NTRS1979

Diode step stress testing program for JANTX1N759A

The effect of power/temperature step stress when applied to a variety of voltage regulating diodes manufactured by Texas Instruments and Siemens was investigated. Test requirements are described and results are tabulated. Failure modes are discussed.

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NASA NTRS1979

Electron irradiation of tandem junction solar cells

The electrical behavior of 100 micron thick tandem junction solar cells manufactured by Texas Instruments was studied as a function of 1 MeV electron fluence, photon irradiation, and 60 C annealing. These cells are found to degrade rapidly with radiation, the most serious loss occurring in the blue end of the cell's spectral response. No photon degradation was found to occur, but the cells did anneal a small amount at 60 C.

Anspaugh, B. E.↗
NASA NTRS1980

JANTX2N2905A transistor

Report evaluates effects of power and temperature overstress on Motorola and Texas Instruments devices. A variety of failure modes are described.

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NASA NTRS1980

JANTX2N4856 field-effect transistor

Report evaluates effects of power and temperature overstress on Teledyne and Texas Instruments devices. Temperature stress caused most failures for both manufacturers' lots. Failure modes are analyzed.

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NASA NTRS1980

Some queuing network models of computer systems

Queuing network models of a computer system operating with a single workload type are presented. Program algorithms are adapted for use on the Texas Instruments SR-52 programmable calculator. By slightly altering the algorithm to process the G and H matrices row by row instead of column by column, six devices and an unlimited job/terminal population could be handled on the SR-52. Techniques are also introduced for handling a simple load dependent server and for studying interactive systems with fixed multiprogramming limits.

Herndon, E. S.↗
NASA NTRS1981

Cosmic ray induced errors in I2L microprocessors and logic devices

Large-scale integrated (LSI) devices fabricated with integrated injection logic (I2L) were studied by both heavy ion experiments and device analysis to determine the upset threshold, the charge collection volumes and ultimately the probability for upset in the galactic cosmic ray spectrum. The devices studied, the SEP9900A, the SBP9989 and the P-Code generator were fabricated by Texas Instruments, Inc.

Price, W. E.↗
NASA NTRS1983

Evaluation of a virtual phase charged-coupled device as an imaging X-ray spectrometer

The X-ray response of an 800 x 800 Texas Instruments virtual phase charge-coupled device (CCD) has been measured in the range 1-8 keV. In the single-photon counting mode, excellent energy resolution (approximately 250 eV FWHM is found for single-pixel Fe-55 X-ray events at a spatial resolution of 15 microns. The detector quantum efficiency for all events is 65% at 2.3 keV (S K line) and approximately 34% at 5.9 keV (Mn K line from Fe-55). The CCD response is linear in energy to a few percent over the 1-8 keV energy range. These results demonstrate that virtual phase CCDs are superior imaging X-ray spectrometers with applications for X-ray astronomy and laboratory plasma research.

Stern, R. A.↗
NASA NTRS1982

Galileo Institute for Astronomy (IFA) charge-coupled device (CCD) system

A fully portable self-contained charge-coupled device system has been constructed for shared use with the Galileo Project Imaging Team. The detector currently incorporated in the system is a Texas Instruments 500 x 500 three-phase CCD that has been thinned to operate in the backside illuminated mode. The detector and camera mainframe electronics were provided by the Jet Propulsion Laboratory. The support electronics and control interfaces necessary to operate the mainframe were constructed. The data system, which is built around a DeAnza Visacom VC-5000 Image Processor with an imbedded LSI-11 minicomputer, was also integrated. The capability to do image processing in real-time at the telescope has proved to be extremely valuable. The overall system read noise has been measured at 25 electrons. Full-well capacity is 40,000 electrons. Some results from laboratory tests and initial observing runs at the Mauna Kea 2.2-m telescope are presented.

Hlivak, R. J.↗
NASA NTRS1983

Photometry of resolved galaxies. III - GR 8

Photometry of 84 resolved stellar images in GR 8 is presented. The numbers are derived by applying point spread function fitting techniques on digital images obtained with a three-phase Texas Instruments CCD. The resulting color-magnitude diagrams are discussed. These data are compared with theoretical stellar evolutionary tracks and similar results for other resolved galaxies.

Hoessel, J. G.↗