Total Ionizing Dose Effects on Gallium Oxide MOSFETs
Poster showing TID data on AFRL Ga2O3 MOSFETs, the mechanisms behind the effects, and some simulations in TCAD
Cadena, Rick [Vanderbilt University]↗
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Total Ionizing Dose Effects in MOS Oxides and Devices
The development of military and space electronics technology has traditionally been heavily influenced by the commercial semiconductor industry. The development of MOS technology, and particularly CMOS technology, as dominant commercial technologies has occurred entirely within the lifetime of the NSREC. For this reason, it is not surprising that the study of radiation interactions with MOS materials, devices and circuits has been a major theme of this conference for most of its history. The basic radiation problem in a MOS transistor is illustrated. The application of an appropriate gate voltage causes a conducting channel to form between the source and drain, so that current flows when the device is turned on. In Fig. lb, the effect of ionizing radiation is illustrated. Radiation-induced trapped charge has built up in the gate oxide, which causes a shift in the threshold voltage (that is, a change in the voltage which must be applied to turn the device on). If this shift is large enough, the device cannot be turned off, even at zero volts applied, and the device is said to have failed by going depletion mode.
Oldham, Timothy R.↗
Total Ionizing Dose Effects in 12-Bit Successive-Approximation Analog-To-Digital Converters
Analog-to-digital (A/D) converters are critical components in many space and military systems, and there have been numerous advances in A/D converter technology that have increased the resolution and conversion time. The increased performance is due to two factors: (1) advances in circuit design and complexity, which have increased the number of components and the integration density; and (2) new process technologies, such as BiCMOS, which provide better performance, cost, and smaller size in mixed-signal circuits. High-speed A/D converters, with conversion rates above 1 MHz, present a challenge to circuit designers and test engineers. Their complex architectures and high-performance specifications result in numerous possible failure modes when they are subjected to ionizing radiation. The dominant failure mode may depend on the specific application because the fundamental effects on MOS and bipolar transistors are strongly affected by bias conditions.
Lee, C. I.↗
Total Ionizing Dose Effects in Flash Memories
This paper presents the results of measurements performed on two different flash memory types, NOR and NAND technologies.
NOR NAND flash memory structures degradation charg↗
Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor
The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.
Transistor↗
Error Characterization and Mitigation for 16Nm MLC NAND Flash Memory Under Total Ionizing Dose Effect
A data device includes a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme that is optional and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count.
Li, Yue↗
Total Ionizing Dose Effect Study on Radiation-Hard Power MOSFET Device.
Abstract not provided.
Kerber, Pranita↗
Total Ionizing Dose Effects on Gallium Oxide MOSFETs
This summary will be submitted for review for the 2025 HEART conference.
Smith, Michael Brandon [Sandia National Laboratori↗
Monte Carlo simulation of shielding designs for a cabinet form factor preclinical MV–energy photon FLASH radiotherapy system
Purpose: A preclinical MV-energy photon FLASH radiotherapy system is being designed at Stanford and SLAC National Accelerator Laboratory. Because of the higher energy and dose rate compared to conventional kV-energy photon laboratory-scale irradiators, adequate shielding in a stand-alone cabinet form factor is more challenging to achieve. We present a Monte Carlo simulation of multilayered shielding for a compact self-shielding system without the need for a radiation therapy vault. Methods: A multilayered shielding approach using multiple alternating layers of high-Z and low-Z materials is applied to the self-shielded cabinet to effectively mitigate the secondary radiation produced and to allow the device to be housed in a Controlled Radiation Area outside of a radiation vault. The multilayered shielding approach takes advantage of the properties of high-Z and low-Z radiation shielding materials such as density, cross-section, atomic number of the shielding elements, and products of radiation interactions within each layer. The Monte Carlo radiation transport code, FLUKA, is used to simulate the total effective dose produced by the operation. Results: The multilayered shielding designs proposed and simulated produced effective dose rates significantly lower than monolayer designs with the same total material thickness at the regulatory boundary; this is accomplished through the manipulation of the locations where secondary radiation is produced and reactions due to material properties such as neutron back reflection in hydrogen. Borated polyethylene at 5 wt% significantly increased the shielding performance as compared to regular polyethylene, with the magnitude of the reduction depending upon the order of the shielding material. Conclusions: The multilayered shielding provides a path for shielding preclinical FLASH systems that deliver MV-energy bremsstrahlung photons. Furthermore, this approach promises to be more efficient with respect to the shielding material mass and space claim as compared to shielded vaults typically required for clinical radiation therapy with MV photons.
62 RADIOLOGY AND NUCLEAR MEDICINE↗
OMH3075 Hall Effect Sensor Total Ionizing Dose Test Report
The purpose of this test was to characterize the OMH3075 Hall Effects sensor degradation for total dose response. The device samples were exposed to low dose irradiations using gamma radiation. Device parameters such as magnetic operating points, leakage currents, supply currents, and rise and fall times were investigated.
Forney, James↗
Second Target Station Bunker Shielding with Populated and Unpopulated Neutron Beamlines: Preliminary Design
At the U.S. Department of Energy’s Oak Ridge National Laboratory, the Second Target Station (STS) beamline sources for preliminary design have been used to perform a shielding analysis of the bunker. Prompt total effective dose rates (i.e., neutron plus photon effective dose rates when the proton beam is on) were calculated on top of the bunker roof and outside the bunker wall. These areas outside the bunker will be generally accessible, so the prompt total dose rate in these areas should not exceed 2.5 μSv . h -1 (0.25 mrem . h -1 ). This paper presents the required shielding thicknesses to meet this dose rate limit. In one instance, this dose rate limit is not met: For a combination of populated and unpopulated beamlines, the prompt total dose rate outside the bunker across from the unpopulated beamline, which has less shielding because of the lack of beamline shielding, slightly exceeds 2.5 μSv . h -1 . In conclusion, once more details are known regarding the STS high-density concrete density and composition, a future analysis will investigate the shielding modifications required to reduce the calculated prompt total dose rates for this configuration to less than 2.5 μSv . h -1 .
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
RCT: Module 2.06, Airborne Sampling Program/Methods [Slides]
The inhalation of radioactive particles is the largest cause of internal dose in workplace incidents. Airborne radioactivity measurements are necessary to ensure that the control measures are, and continue to be, effective. Typically, airborne radioactivity levels are maintained well below allowable levels to keep the total effective dose equivalent small.
61 RADIATION PROTECTION AND DOSIMETRY↗
Radioidone Event of March 2023
Internal Dosimetry (RP-SVS) will send each affected employee a dose assessment based on their thyroid measurement results. Affected employees will be kept apprised of their dose assessment with an issued progress report. Included in the progress report is an upper limit on the committed effective dose (total dose incurred before the radioiodine leaves the body). Final dose results are expected to be reported within about two weeks of the initial thyroid measurement. You can contact Deepesh Poudel (505-665-1798), John Klumpp (505-667-0325), or Sara Dumit (505-665-4095) if you have any questions about the status of your dose assessment
63 RADIATION, THERMAL, AND OTHER ENVIRON. POLLUTAN↗
Effects of ionizing radiation on CCD's
The effects of 1.2 MeV gamma radiation and 20 MeV electrons on the operational characteristics of CCDs are studied. The effects of ionizing radiation on the charge transfer efficiency, dark current, and input/output circuitry are described. The improved radiation hardness of buried channel CCDs is compared to surface channel results. Both ion implanted and epitaxial layer buried channel device results are included. The advantages of using a single thickness SiO2 gate dielectric are described. The threshold voltage shifts and surface state density changes of dry, steam, and HCl doped oxides are discussed. Recent results on the recovery times and total dose effects of high dose rate pulses of 20 MeV electrons are reported.
Hartsell, G. A.↗
Calculation for T Plant Estimated PTE with Receipt of K Basin Sludge and Filter Media
The purpose of this environmental calculation is to: (1) show compliance with the WAC 173-400-110, New Source Review (NSR) for Sources and Portable Sources requirements and (2) provide the methodology, assumptions and calculation used to estimate the potential to emit (PTE) and Total Effective Dose Equivalent to the Maximally Exposed Individual (TEDE to the MEI) radionuclide airborne emissions associated with the receipt of K Basin sludge and filter media for storage at T Plant.
12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
Long-term prediction test procedure for most ICs, based on linear response theory
Experimentally, thermal annealing is known to be a factor which enables a number of different integrated circuits (IC's) to recover their operating characteristics after suffering radiation damage in the space radiation environment; thus, decreasing and limiting long term cumulative total-dose effects. This annealing is also known to be accelerated at elevated temperatures both during and after irradiation. Linear response theory (LRT) was applied, and a linear response function (LRF) to predict the radiation/annealing response of sensitive parameters of IC's for long term (several months or years) exposure to the space radiation environment were constructed. Compressing the annealing process from several years in orbit to just a few hours or days in the laboratory is achieved by subjecting the IC to elevated temperatures or by increasing the typical spaceflight dose rate by several orders of magnitude for simultaneous radiation/annealing only. The accomplishments are as follows: (1) the test procedure to make predictions of the radiation response was developed; (2) the calculation of the shift in the threshold potential due to the charge distribution in the oxide was written; (3) electron tunneling processes from the bulk Si to the oxide region in an MOS IC were estimated; (4) in order to connect the experimental annealing data to the theoretical model, constants of the model of the basic annealing process were established; (5) experimental data obtained at elevated temperatures were analyzed; (6) time compression and reliability of predictions for the long term region were shown; (7) a method to compress test time and to make predictions of response for the nonlinear region was proposed; and (8) nonlinearity of the LRF with respect to log(t) was calculated theoretically from a model.
Litovchenko, V.↗
Comparison of Total Dose Responses on High Resolution Analog-to-Digital Converter Technologies
This paper compares total dose effects on two different technology (CMOS and BiCMOS) 12-bit ADCs from the same manufacturer, Burr-Brown.
Dose Responses Analog-to-Digital Converter↗
U309 N-Channel Silicon Junction Field Effect Transistor Total Ionizing Dose Characterization Report
The purpose of this testing was to characterize the InterFET Corporation U309 for total dose response. This test shall serve as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. The U309 is a discrete Junction Field Effect Transistor (JFET). High dose rate (HDR) irradiations were performed in this test so that the device susceptibility to Total Ionizing Dose (TID) could be determined.
Total Ionizing Dose (TID)↗