Total Dose Modeling of the Transit Through the Van Allen Belts
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NASA Goddard Space Flight Center's Compendium of Recent Total Ionizing Dose and Displacement Damage Dose Results
Total ionizing dose and displacement damage dose testing were performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.
Electronics↗
NASA Goddard Space Flight Center’s Compendium of Recent Total Ionizing Dose and Displacement Damage Dose Results
Total ionizing dose and displacement damage testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
Alyson D. Topper↗
Investigation of Application-Specific Bias Conditions and Dose Rate Dependency in Total Ionizing Dose (TID) Response
This paper investigates flight circuit application bias and irradiation dose rate dependencies (“test as you fly” conditions) in the total ionizing dose (TID) response of various electronic components considered for use in a space radiation environment.
Zajac, Stephanie A.↗
Total Ionizing Dose Test Report for the SFT2222A NPN Bipolar Junction Transistor
The purpose of this study is to examine the low dose rate total ionizing dose (TID) susceptibility of the SFT2222A NPN bipolar junction transistor (BJT) manufactured by Solid State Devices, Inc. (SSDI).
total ionizing dose (TID)↗
Total Ionizing Dose Test Report for the AD581 Precision Voltage Reference
The purpose of this test was to determine the low dose rate total ionizing dose susceptibility of the AD581 precision voltage reference, for the Joint Polar Satellite System (JPSS) Program.
Dakai Chen↗
Recovery of damage in rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays
This paper reports on the recovery properties of rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays. The results indicated that complex recovery properties controlled the damage sensitivities of the tested parts. The results also indicated that damage sensitivities depended on dose rate, total dose, supply bias, gate bias, transistor type, radiation source, and particle energy. The complex nature of these dependencies make interpretation of LSI device performance in space (exposure to entire electron and proton spectra) difficult, if not impossible, without respective ground tests and analyses. Complete recovery of n-channel shifts was observed, in some cases within hours after irradiation, with equilibrium values of threshold voltages greater than their pre-irradiation values. This effect depended on total dose, radiation source, and gate bias during exposure. In contrast, the p-channel shifts recovered only 20 percent within 30 days after irradiation.
Brucker, G. J.↗
A review of dose rate dependent effects of total ionizing dose /TID/ irradiations
The basic effects of ionizing radiation are summarized. The problem of the existence of a true dose rate effect is examined. Consideration is given to the nature of long term annealing, which is sometimes manifested as an 'apparent' dose rate effect. Both analytical and experimental work is considered and the results are related to practical testing requirements.
Nichols, D. K.↗
Radiation response issues for infrared detectors
Researchers describe the most important radiation response issues for infrared detectors. In general, the two key degradation mechanisms in infrared detectors are the noise produced by exposure to a flux of ionizing particles (e.g.; trapped electronics and protons, debris gammas and electrons, radioactive decay of neutron-activated materials) and permanent damage produced by exposure to total dose. Total-dose-induced damage is most often the result of charge trapping in insulators or at interfaces. Exposure to short pulses of ionization (e.g.; prompt x rays or gammas, delayed gammas) will cause detector upset. However, this upset is not important to a sensor unless the recovery time is too long. A few detector technologies are vulnerable to neutron-induced displacement damage, but fortunately most are not. Researchers compare the responses of the new technologies with those of the mainstream technologies of PV HgCdTe and IBC Si:As. One important reason for this comparison is to note where some of the newer technologies have the potential to provide significantly improved radiation hardness compared with that of the mainstream technologies, and thus to provide greater motivation for the pursuit of these technologies.
Kalma, Arne H.↗
Total Ionizing Dose Effects on High Resolution (12-/14-bit) Analog-to-Digital Converters
This paper reports total dose radiation test results for high resolution 12-/14-bit A/D converters. Small changes in internal components can cause these devices to fail their specifications at relatively low total dose levels. Degradation of signal-to-noise ratio becomes increasingly importamt for high accuracy converters. Rebound effects in the thick-oxide MOS devices causes these responses to be different at low and high dose rates, which is a major concern for space applications.
radiation ionizing analog-to-digital converters MO↗
AD8065 Voltage Feedback Amplifier’s Total Ionizing Dose Characterization Report
The purpose of this testing was to characterize Analog Devices’ AD8065 FastFET amplifier for low-dose rate (LDR) total ionizing dose (TID) response based on the Lucy project requirements and will be used on the L’ORRI instrument being built by Johns Hopkins University Applied Physics Lab. The AD8065 is a voltage feedback amplifier with FET inputs developed with the proprietary eXtra Fast Complementary Bipolar (XFCB) process. The amplifier boasts low noise operation and very high input impedance with a wide supply voltage range.
Megan Casey↗
LTC1877 High Efficiency Regulator Total Ionizing Dose Test Report
This report presents total ionizing dose evaluation data for the Linear Technology Corporation LTC1877 high efficiency monolithic synchronous step-down regulator. Data sheet parameters were tracked as a function of ionizing dose up to a total of 20 krad(SiO2). Control devices were also used.
total ionizing dose (TID)↗
U309 N-Channel Silicon Junction Field Effect Transistor Total Ionizing Dose Characterization Report
The purpose of this testing was to characterize the InterFET Corporation U309 for total dose response. This test shall serve as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. The U309 is a discrete Junction Field Effect Transistor (JFET). High dose rate (HDR) irradiations were performed in this test so that the device susceptibility to Total Ionizing Dose (TID) could be determined.
Total Ionizing Dose (TID)↗
Total Ionizing Dose Effects on Voltage-to-Frequency Converters
This paper discusses total dose effects on voltage-to-frequency converters which impose different requirements on internal circuitry, and are also very high-precision devices (for example, linearity is typically specified between 0.002 and 0.05%).
low dose rate (LDR) Voltage-to-Frequency Converter↗
Avalanche ASV016204 (Pre-Production Samples) 40nm MRAM Total Ionizing Dose Test Report
The purpose of this test was to characterize the Avalanche Technology ASV016204’s total dose response. In the test, the device was exposed to high dose rate (HDR) irradiations using gamma radiation. Device functionality (in terms of memory cell upsets and read/write ability) as well as power supply currents during various modes of operations were recorded.
Total Ionizing Dose (TID)↗
LM193 Dual Differential Comparator Total Ionizing Dose Test Report
The purpose of this test was to characterize the flight lot of Texas Instruments' LM193 (flight part number is 5962-9452601Q2A) for total dose response. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) was determined.
enhanced low dose rate sensitivity (ELDRS↗
Micron MT29F128G08AJAAA 128GB Asynchronous Flash Memory Total Ionizing Dose Characterization Test Report
The purpose of this test was to characterize the Micron MT29F128G08AJAAAs parameter degradation for total dose response and to evaluate and compare lot date codes for sensitivity. In the test, the device was exposed to both low dose and high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits and overall chip and die health were investigated to determine which lot is more robust.
Flash Memory↗