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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5

All sources NASA NTRS DOE OSTI

NASA NTRS2017

Micron MT29F128G08AJAAA 128GB Asynchronous Flash Memory Total Ionizing Dose Characterization Test Report

The purpose of this test was to characterize the Micron MT29F128G08AJAAAs parameter degradation for total dose response and to evaluate and compare lot date codes for sensitivity. In the test, the device was exposed to both low dose and high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits and overall chip and die health were investigated to determine which lot is more robust.

Flash Memory↗

NASA NTRS2018

Analog Devices ADXL354 Low Noise, Low Drift, Low Power, 3-Axis MEMS Accelerometer Total Ionizing Dose Characterization Test Report

The purpose of this test was to characterize the Analog Devices ADXL354 parameter degradation for total dose response. In the test, the device was exposed to a dose rate of 50 rad(Si)/s or 0.5 Gy(Si)/s using a gamma radiation source in accordance with MIL-STD-883K Paragraph 3.6.1 (Condition A). Device parameters such as supply current, self-test voltage response, and LDO regulator output voltages were monitored.

Total Ionizing Dose (TID)↗

NASA NTRS2019

ISSI IS46DR16640B-25DBA25 DDR2 SDRAM Total Ionizing Dose Characterization Test Report

The purpose of this testing is to characterize the ISSI IS46DR16640B-25DBA25 parameter degradation for total dose response. This test’s purpose is to evaluate and compare lot date codes for sensitivity. In the test, the device is exposed to both low dose and high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits or addresses, and overall chip and die health are investigated to determine which lot is more robust. These parameters directly affect the functionality of the memory within a system and may determine thresholds necessary to mitigate failure.

Total Ionizing Dose (TID)↗

NASA NTRS2020

HSYE-117RH Voltage Linear Regulator Total Ionizing Dose Test Report

The purpose of this test was to validate the Intersil HSYE-117RH-Q flight lot for use in the fabrication of Europa Clipper Propulsion subsystem flight hardware. This test shall serve as the radiation lot acceptance test (RLAT) for the flight lot date with wafer lot number G3X3CQC and lot date code (LDC) 1830. Low dose rate (LDR) irradiations have been performed by the manufacturer, but only to 100 krad(Si). This test was a follow-on to the original Radiation Lot-Specific Acceptance Testing (RLAT) performed on this LDC. Application-specific load currents were used for the line regulation and load regulation measurements. All other parameters were measured with standard bias conditions as specified in the datasheet.

Total Ionizing Dose (TID)↗

NASA NTRS2017

AD620SQ/883B Total Ionizing Dose Radiation Lot Acceptance Report for RESTORE-LEO

A Radiation Lot Acceptance Test was performed on the AD620SQ/883B, Lot 1708D, in accordance with MIL-STD-883, Method 1019, Condition D. Using a Co-60 source 4 biased parts and 4 unbiased parts were irradiated at 10 mrad/s (0.036 krad/hr) in intervals of approximately 1 krad from 3-10 krads, and ones of 5 krads from 10-25 krads, where it was annealed while unbiased at 25 degrees Celsius, for 2 days, and then, subsequently, annealed while biased at 25 degrees celsius, for another 7 days.

Bipolar↗

DOE OSTI2021

Total-Ionizing-Dose Effects on Long-term Data Retention Characteristics of Commercial 3-D NAND Memories

This article evaluates the data retention characteristics of irradiated multi-level cell (MLC) 3-D NAND flash memories. We irradiate the memory chips by a Co-60 gamma-ray source for up to 50 krad(Si) and then write a random data pattern on the irradiated chip to find its retention characteristics. The experimental results show that the data retention property of the irradiated chips is significantly degraded compared to the un-irradiated ones. We evaluate two independent strategies to improve the data retention characteristics of the irradiated chips. Furthermore, the first method involves high-temperature annealing of the irradiated chip while the second method suggests pre-programming the memory modules before deploying them in radiation-prone environments.

3-D NAND flash↗

NASA NTRS1994

Total Ionizing Dose Effects on High Resolution (12-/14-bit) Analog-to-Digital Converters

This paper reports total dose radiation test results for high resolution 12-/14-bit A/D converters. Small changes in internal components can cause these devices to fail their specifications at relatively low total dose levels. Degradation of signal-to-noise ratio becomes increasingly importamt for high accuracy converters. Rebound effects in the thick-oxide MOS devices causes these responses to be different at low and high dose rates, which is a major concern for space applications.

radiation ionizing analog-to-digital converters MO↗

NASA NTRS2003

Total Ionizing Dose Effects in MOS Oxides and Devices

The development of military and space electronics technology has traditionally been heavily influenced by the commercial semiconductor industry. The development of MOS technology, and particularly CMOS technology, as dominant commercial technologies has occurred entirely within the lifetime of the NSREC. For this reason, it is not surprising that the study of radiation interactions with MOS materials, devices and circuits has been a major theme of this conference for most of its history. The basic radiation problem in a MOS transistor is illustrated. The application of an appropriate gate voltage causes a conducting channel to form between the source and drain, so that current flows when the device is turned on. In Fig. lb, the effect of ionizing radiation is illustrated. Radiation-induced trapped charge has built up in the gate oxide, which causes a shift in the threshold voltage (that is, a change in the voltage which must be applied to turn the device on). If this shift is large enough, the device cannot be turned off, even at zero volts applied, and the device is said to have failed by going depletion mode.

Oldham, Timothy R.↗

NASA NTRS1993

Total Ionizing Dose Effects in 12-Bit Successive-Approximation Analog-To-Digital Converters

Analog-to-digital (A/D) converters are critical components in many space and military systems, and there have been numerous advances in A/D converter technology that have increased the resolution and conversion time. The increased performance is due to two factors: (1) advances in circuit design and complexity, which have increased the number of components and the integration density; and (2) new process technologies, such as BiCMOS, which provide better performance, cost, and smaller size in mixed-signal circuits. High-speed A/D converters, with conversion rates above 1 MHz, present a challenge to circuit designers and test engineers. Their complex architectures and high-performance specifications result in numerous possible failure modes when they are subjected to ionizing radiation. The dominant failure mode may depend on the specific application because the fundamental effects on MOS and bipolar transistors are strongly affected by bias conditions.

Lee, C. I.↗

DOE OSTI2021