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Testing was done to characterize the Texas Instruments Operational Amplifiers OPA842 single event effects (SEE) response. The primary SEE concerns for this device are single event latchup (SEL) and single event transients (SETs). Testing focused on determining susceptibility to SEL and characterizing the SET response. Testing occurred on November 11, 2022.
This is an independent investigation that evaluates the single event destructive and transient susceptibility of the Xilinx Kintex-UltraScale device. Design/Device susceptibility is determined by monitoring the device under test (DUT) for Single Event Transient (SET) and Single Event Upset (SEU) induced faults by exposing the DUT to a heavy ion beam. Potential Single Event Latch-up (SEL) is monitored throughout heavy-ion testing by examining device current. This device does not have embedded mitigation. Hence, user implemented mitigation is investigated using Synopsys mitigation tools.
The goal of this study was to perform an independent investigation of single event destructive and transient susceptibility of the Microsemi RTG4 device. The devices under test were the Microsemi RTG4 field programmable gate array (FPGA) Rev C. The devices under test will be referenced as the DUT or RTG4 Rev C throughout this document. The DUT was configured to have various test structures that are geared to measure specific potential susceptibilities of the device. DesignDevice susceptibility was determined by monitoring the DUT for Single Event Transient (SET) and Single Event Upset (SEU) induced faults by exposing the DUT to a heavy ion beam. Potential Single Event Latch-up (SEL) was checked throughout heavy-ion testing by monitoring device current.
This is a NASA Electronics Parts and Packaging (NEPP) independent investigation to determine the single event destructive and transient susceptibility of the Microsemi RTG4 device (DUT).
This study was undertaken to determine the single event effect and transient susceptibility of the Crane Interpoint Maximum Flexible Power (MFP) Single Output Point of Load DC/DC Converters for transient interruptions in the output signal and for destructive and non destructive events induced by exposing it to a heavy ion beam..
We present an independent investigation of heavy-ion single event effect data for the Microsemi RTG4 field programmable gate array (FPGA).
The purpose of this testing was to examine the potential for destructive single event effects (SEE) in Broadcom’s ACPL-785E optocoupler in support of a NASA GSFC flight program. SEE testing was conducted NASA Space Radiation Laboratory (NSRL) at Brookhaven National Laboratory where devices with unmodified packaging were irradiated with high energy ions that have sufficient range to pass through the packaging of the device.
AMEGO-X is a proposed Compton/pair telescope which will image and survey the medium-energy gamma-ray sky between 100 keV and 1 GeV. It is designed to detect and characterize gamma-ray emission from multi-messenger sources. On short time scales (<100s), including information from single-site events (photoelectric effect interactions)significantly increases AMEGO-X's sensitivity and lowers its energy threshold down to 25 keV. In this presentation, we will present AMEGO-X's sensitivity to transient events such as gamma-ray bursts and magnetar giant flares, and discuss the improvements due to the inclusion of single-site events. We will also discuss AMEGO-X's ability to localize transient sources and alert the community for follow-up observations.
AMEGO-X is a Compton/pair gamma-ray telescope, submitted to NASA's 2021 MIDEX AO, which will image and survey the medium-energy gamma-ray sky between 100 keV and 1 GeV. It is designed to detect and characterize gamma-ray emission from multi-messenger sources. On short time scales (<100s), including information from single-site events (photoelectric effect interactions) significantly increases AMEGO-X's sensitivity and lowers its energy threshold down to 25 keV. In this presentation, we will present AMEGO-X's sensitivity to transient events such as gamma-ray bursts and magnetar giant flares, and discuss the improvements due to the inclusion of single-site events. We will also discuss AMEGO-X's ability to localize transient sources and alert the community for follow-up observations.
Pulse Width Modulator (PWM) Controllers are the heart of switching power supply systems in development today. The PWMs considered here have the same integration advantages as many other controllers but it also includes the interface drivers for the follow-on power Field Effect Transistors (FET). Previous work on these types of devices looked into the required test methodologies [ 11 and the impact of radiation on the soft start and shutdown circuits of typically incorporated in the technology [2]. Taking advantage of this previous work this study was undertaken to determine the single event destructive and transient susceptibility of the Linfinity SG1525A Pulse Width Modulator Controller. The device was monitored for transient interruptions in the output signals and for destructive events induced by exposing it to a heavy ion beam at the Texas A&M University Cyclotron Single Event Effects Test Facility. After exposing these devices to the beam, a new upset mode has been identified that can lead to catastrophic power supply system failure if this event would occur while drive power FETs off the two device outputs. The devices and the test methods used will be described first. This will be followed by a brief description of the data collected to date (not all data can be presented with the length constraints of the summary) and a summary of the key results.
Radiated emissions measurements as specified by MIL-STD-461 are performed in the frequency domain, which is best suited to continuous wave (CW) types of signals. However, many platforms implement signals that are single event pulses or transients. Such signals can potentially generate momentary radiated emissions that can cause interference in the system, but they may be missed with traditional measurement techniques. This demonstration provides measurement and analysis techniques that effectively evaluate the potential emissions from such signals in order to evaluate their potential impacts to system performance.
This is an independent study to determine the single event destructive and transient susceptibility of the Xilinx Virtex-5QV (SIRF) device. A framework for evaluating complex digital systems targeted for harsh radiation environments such as space is presented.
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We explore and elucidate physical failure mechanisms in a 4H-SiC, high voltage, superjunction (SJ) vertical DMOSFET from a single heavy ion strike using three-dimensional electro-thermal transient simulations. The single-event burnout (SEB) failure is thermal runaway from second breakdown, initiated by impact ionization and terminated with mesoplasma formation, at the center of the P-pillar/N+ substrate interface. We also demonstrate that the SEB performance of this SiC SJ DMOSFET is insensitive to the pillar width but sensitive to the strike location with ion strike at the P-pillar causing SEB at a lower blocking voltage than at the N-pillar. Compared to commercially available 1.2 kV blocking-rated non-SJ DMOSFETs, which have been demonstrated to survive SEB up to 525 V, the SJ DMOSFET increases SEB survival threshold voltage (VSEB) by a factor of 2.2, making it close to 1200 V, while the on-resistance is increased by only 11%. Using our recently developed figure of merit (FoM), which considers the trade-off between VSEB and on-state performance, we find that the SiC SJ DMOSFET achieves a FoM that is 14 times better, making it superior to conventional 1.2 kV SiC DMOSFETs for long-term radiation-tolerant operation in space applications.
Memory system for computer repeatedly tests itself during brief, regular interruptions of normal processing of data. Detects and corrects transient faults as single-event upsets (changes in bits due to ionizing radiation) within milliseconds after occuring. Self-testing concept surpasses conventional by actively flushing latent defects out of memory and attempting to correct before accumulating beyond capacity for self-correction or detection. Cost of improvement modest increase in complexity of circuitry and operating time.
The phase-locked loop (PLL) is an old and widely used circuit for frequency and phase demodulation, carrier and clock recovery, and frequency synthesis [1]. Its implementations range from discrete components to fully integrated circuits and even to firmware or software. Often the PLL is a highly critical component of a system, as for example when it is used to derive the on-chip clock, but as of this writing no definitive single-event upset (SET)/single-event transient (SET) tolerant PLL circuit has been described. This chapter hopes to rectify that situation, at least in regard to PLLs that are used to generate clocks. Older literature on fault-tolerant PLLs deals with detection of a hard failure, which is recovered by replacement, repair, or manual restart of discrete component systems. Several patents exist along these lines (6349391, 6272647, and 7089442). A newer approach is to harden the parts of a PLL system, to one degree or another, such as by using a voltage-based charge pump or a triple modular redundant (TMR) voted voltage-controlled oscillator (VCO). A more comprehensive approach is to harden by triplication and voting (TMR) all the digital pieces (primarily the divider) of a frequency synthesis PLL, but this still leaves room for errors in the VCO and the loop filter. Instead of hardening or voting pieces of a system, such as a frequency synthesis system (i.e., clock multiplier), we will show how the entire system can be voted. There are two main ways of doing this, each with advantages and drawbacks. We will show how each has advantages in certain areas, depending on the lock acquisition and tracking characteristics of the PLL. Because of this dependency on PLL characteristics, we will briefly revisit the theory of PLLs. But first we will describe the characteristics of voters and their correct application, as some literature does not follow the voting procedure that guarantees elimination of errors. Additionally, we will find that voting clocks is a bit trickier than voting data where an infallible clock is assumed. It is our job here to produce (or recover) that assumed infallible clock!
This paper presents a digitally controlled programmable point-of-load regulator for next-generation power systems. A novel digital control scheme was designed to minimize single-event effect (SEE)-induced transient effects. By effectively programming the loop transmission, the POL can trade off transient response time with SET robustness. The IC works with 1 to 5.5 V input voltage, 1-4.5V regulated output voltage, high efficiency (peak efficiency at 94%) and power of up to 5 W. The design was fabricated in the AMI i2t100 0.7 mu m complimentary, metal-oxide semiconductor (CMOS) process and characterized with the Jet Propulsion Laboratory (JPL) pulsed laser system.
Integration-technology feature shrink increases computing-system susceptibility to single-event effects (SEE). While modeling SEE faults will be critical, an integrated processor’s scope makes physically correct modeling computationally intractable. Without useful models, presilicon evaluation of fault-tolerance approaches becomes impossible. To incorporate accurate transistor-level effects at a system scope, we present a multiscale simulation framework. Charge collection at the 1) device level determines 2) circuit-level transient duration and state-upset likelihood. Circuit effects, in turn, impact 3) register-transfer-level architecture-state corruption visible at 4) the system level. Furthermore, the physically accurate effects of SEEs in large-scale systems, executed on a high-performance computing (HPC) simulator, could be used to drive cross-layer radiation hardening by design. We demonstrate the capabilities of this model with two case studies. First, we determine a D flip-flop’s sensitivity at the transistor level on 14-nm FinFet technology, validating the model against published cross sections. Second, we track and estimate faults in a microprocessor without interlocked pipelined stages (MIPS) processor for Adams 90% worst case environment in an isotropic space environment.