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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS2018

Analog Devices ADXL354 Low Noise, Low Drift, Low Power, 3-Axis MEMS Accelerometer Total Ionizing Dose Characterization Test Report

The purpose of this test was to characterize the Analog Devices ADXL354 parameter degradation for total dose response. In the test, the device was exposed to a dose rate of 50 rad(Si)/s or 0.5 Gy(Si)/s using a gamma radiation source in accordance with MIL-STD-883K Paragraph 3.6.1 (Condition A). Device parameters such as supply current, self-test voltage response, and LDO regulator output voltages were monitored.

Total Ionizing Dose (TID)↗
NASA NTRS2022

Si5345, SY88422L, LT3482, and MSK130 components Total Ionizing Dose Test Report

The purpose of this test was to characterize the SI-5345, SY88422L, LT3482 and MSK130 parameter degradation for total dose response. The components are associated with REAG ID #21-024. In the test, each device was exposed to high dose rate (HDR) irradiation using gamma radiation. Device parameters such as leakage currents, timing, and overall chip health were investigated. These devices were tested for an interstellar mission on a trajectory between 0.9 AU and 5.3 AU with a 2.5-year mission, yielding an expected overall dose of 29 krad(Si)behind 1 mm of aluminum shielding (at 95% confidence; environment and dose determined through SPENVIS). This test report gives an initial look at candidate parts. Extremely small sample sizes (only 1 or 2 devices tested) do not allow consideration of part-to-part variability. High dose rates were used despite LT3482 and MSK130 having potential enhanced low dose rate sensitivity (ELDRS). Care should be taken in interpreting results given these limitations.

Total Ionizing Dose (TID)↗
NASA NTRS2019

ISSI IS46DR16640B-25DBA25 DDR2 SDRAM Total Ionizing Dose Characterization Test Report

The purpose of this testing is to characterize the ISSI IS46DR16640B-25DBA25 parameter degradation for total dose response. This test’s purpose is to evaluate and compare lot date codes for sensitivity. In the test, the device is exposed to both low dose and high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits or addresses, and overall chip and die health are investigated to determine which lot is more robust. These parameters directly affect the functionality of the memory within a system and may determine thresholds necessary to mitigate failure.

Total Ionizing Dose (TID)↗
NASA NTRS2011

Total Ionizing Dose Test Report BFR92A NPN 5 GHz Wide Band Transistor from NXP

The purpose of this test was to characterize the Philips/NXP BFR92A NPN 5 gigahertz wide band silicon transistor for total dose response. This test shall serves as the radiation lot acceptance test (RLAT) for the lot date code (LDC) 1027. The BFR92A is packaged in a 3-pin plastic SOT23 package. Low dose rate (LDR/ELDRS) irradiations was performed.

Total Ionizing Dose (TID)↗
NASA NTRS2019

OMH3075 Hall Effect Sensor Total Ionizing Dose Test Report

The purpose of this test was to characterize the OMH3075 Hall Effects sensor degradation for total dose response. The device samples were exposed to low dose irradiations using gamma radiation. Device parameters such as magnetic operating points, leakage currents, supply currents, and rise and fall times were investigated.

Forney, James↗
NASA NTRS1997

Total Ionizing Dose Effects on 64Mb 3.3V DRAMs

64Mb 3.3V CMOS DRAMs from two different manufacturers were tested for total dose. Retention time, power supply current, and functionality were used to characterize device response.

Ionizing Dose Effects Samsung Mitsubishi↗
NASA NTRS2021

Avionics Radiation Hardness Assurance (RHA) Guidelines

Based on the need to develop and adopt timely and up-to-date guidance to ensure that natural space radiation environment threats do not compromise mission success, the NASA Engineering and Safety Center (NESC) was solicited to develop and publish guidance for deriving radiation hardness assurance (RHA) requirements and for evaluating avionics hardware elements with respect to total ionizing dose, total non-ionizing dose, and single event effects. This document contains the outcome of the NESC assessment.

Guidelines↗
NASA NTRS2021

NASA Engineering and Safety Center Technical Bulletin No. 19-01-1: Mitigating Risks of Single-Event Effects in Space Applications

Since most Electrical, Electronic, and Electromechanical (EEE) parts are intended for terrestrial applications, they are susceptible to a range of radiation threats in the space environment if the resulting effects are not properly characterized and mitigated. Even specially designed radiation-hardened parts may not be tolerant to all types of radiation effects. Radiation hardness is a multi-dimensional property of any part that describes intrinsic abilities to tolerate various radiation environments [1,2]. Effects to be concerned with include total ionizing dose, total non-ionizing dose, and single-event effects (SEE) – all of which depend on the mission, environment, application, and lifetime. Radiation effects concerns may be the same whether a EEE part is Commercial-Off-The-Shelf (COTS), MIL-SPEC, or some other variant, all of which are susceptible to the same radiation threats [3]. SEE consequences range from recoverable faults to catastrophic failure. Like other random faults, SEE can be mitigated with informed circuit design practices at the device, card, and/or system level.

Single-event effects↗
NASA NTRS2018

MT29F512G08AUCBBH8-6IT:B NAND Flash Memory Total Ionizing Dose Test Report

The purpose of this test was to characterize the Micron 512 GB NAND (MT29F512G08AUCBBH8-6IT:B) flash memory parameter degradation for total dose response. In the test, the device was exposed to high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits and overall chip and die health were investigated.

TID↗
NASA NTRS2016

Total Ionizing Dose Response of SDRAM, DDR2 and DDR3 Memories

Total Ionizing Dose response (ID) of SDRAM (Synchronous Dynamic Random Access Memory), DDR2 (Double Data Rate2) and DDR3 (Double Data Rate3) memories is reported in static bias, and auto refresh modes. Data analysis reveals some types of memory have significant increases in stuck bits during TID exposure when refreshed.

Amrbar, Mehran↗
NASA NTRS1981

Infrared spectroscopic analysis of the effects of simulated space radiation on a polyimide

Infrared spectroscopic techniques have been used to study the effects of electron radiation on the polyimide PMDA-p,p-prime- ODA. The radiation exposures were made at various dose rates, for a total dose approximately equal to that for 30 years of exposure to electron radiation in geosynchronous earth orbit. At high dose rates the major effect was probably the formation of a polyisoimide or a charged quaternary amine, and at the low dose rates the effect was a reduction in the amount or aromatic ether linkage. In addition, the effects of dose rate for a small total dose were studied. Elevated temperatures occurred at high dose rates and were, in part, probably the cause of the radiation product. The data suggest that dose rates for accelerated simulations of the space environment should not exceed 100,000 rads/sec.

Ferl, J. E.↗