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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Tradeoffs in Flight Design Upset Mitigation in State of the Art FPGAs: Hardened by Design vs. Design Level Hardening

This presentation compares and contrasts the effectiveness and the system/designer impacts of the two main approaches to upset hardening: the Actel approach (RTSX-S and RTAX-S) of low-level (inside each flip-flop) triplication and the Xilinx approach (Virtex and Virtex2) of design-level triplication of both functional blocks and voters. The effectiveness of these approaches is compared using measurements made in conjunction with each of the FPGAs' manufacturer: for Actel, published data [1] and for Xilinx, recent results from the Xilinx SEE Test Consortium (note that the author is an active and founding member). The impacts involve Actel advantages in the areas of transistor-utilization efficiency and minimizing designer involvement in the triplication while the Xilinx advantages relate to the ability to custom tailor upset hardness and the flexibility of re-configurability. Additionally, there are currently clear Xilinx advantages in available features such as the number of I/O's, logic cells, and RAM blocks as well as speed. However, the advantage of the Actel anti-fuses for configuration over the Xilinx SRAM cells is that the latter need additional functionality and external circuitry (PROMs and, at least a watchdog timer) for configuration and configuration scrubbing. Further, although effectively mitigated if done correctly, the proton upset-ability of the Xilinx FPGAs is a concern in severe proton-rich environments. Ultimately, both manufacturers' upset hardening is limited by SEFI (single-event functional interrupt) rates where it appears the Actel results are better although the Xilinx Virtex2-family result of about one SEFI in 65 device-years in solar-min GCR (the more intense part of the galactic cosmic-ray background) should be acceptable to most missions

radiation effects↗
NASA NTRS2005

Impact of Negative Bias Temperature Instability on FPGAs

In this sliide presentation the statistical impact of PMOS Negative Bias Temperature Instability (NBTI) degradation on circuit delay is reviewed. An on-board timing circuitry that was been developed to detect and measure timing delays in SRAM-based LUT commercial FPGAs is described. The initial experimental data on the on-board timing circuit are reviewed.

pixel reliability↗
NASA NTRS2010

Reconfigurable Fault Tolerance for FPGAs

The invention allows a field-programmable gate array (FPGA) or similar device to be efficiently reconfigured in whole or in part to provide higher capacity, non-redundant operation. The redundant device consists of functional units such as adders or multipliers, configuration memory for the functional units, a programmable routing method, configuration memory for the routing method, and various other features such as block RAM, I/O (random access memory, input/output) capability, dedicated carry logic, etc. The redundant device has three identical sets of functional units and routing resources and majority voters that correct errors. The configuration memory may or may not be redundant, depending on need. For example, SRAM-based FPGAs will need some type of radiation-tolerant configuration memory, or they will need triple-redundant configuration memory. Flash or anti-fuse devices will generally not need redundant configuration memory. Some means of loading and verifying the configuration memory is also required. These are all components of the pre-existing redundant FPGA. This innovation modifies the voter to accept a MODE input, which specifies whether ordinary voting is to occur, or if redundancy is to be split. Generally, additional routing resources will also be required to pass data between sections of the device created by splitting the redundancy. In redundancy mode, the voters produce an output corresponding to the two inputs that agree, in the usual fashion. In the split mode, the voters select just one input and convey this to the output, ignoring the other inputs. In a dual-redundant system (as opposed to triple-redundant), instead of a voter, there is some means to latch or gate a state update only when both inputs agree. In this case, the invention would require modification of the latch or gate so that it would operate normally in redundant mode, and would separately latch or gate the inputs in non-redundant mode.

Shuler, Robert, Jr.↗
NASA NTRS2011

CoNNeCT Baseband Processor Module

A document describes the CoNNeCT Baseband Processor Module (BPM) based on an updated processor, memory technology, and field-programmable gate arrays (FPGAs). The BPM was developed from a requirement to provide sufficient computing power and memory storage to conduct experiments for a Software Defined Radio (SDR) to be implemented. The flight SDR uses the AT697 SPARC processor with on-chip data and instruction cache. The non-volatile memory has been increased from a 20-Mbit EEPROM (electrically erasable programmable read only memory) to a 4-Gbit Flash, managed by the RTAX2000 Housekeeper, allowing more programs and FPGA bit-files to be stored. The volatile memory has been increased from a 20-Mbit SRAM (static random access memory) to a 1.25-Gbit SDRAM (synchronous dynamic random access memory), providing additional memory space for more complex operating systems and programs to be executed on the SPARC. All memory is EDAC (error detection and correction) protected, while the SPARC processor implements fault protection via TMR (triple modular redundancy) architecture. Further capability over prior BPM designs includes the addition of a second FPGA to implement features beyond the resources of a single FPGA. Both FPGAs are implemented with Xilinx Virtex-II and are interconnected by a 96-bit bus to facilitate data exchange. Dedicated 1.25- Gbit SDRAMs are wired to each Xilinx FPGA to accommodate high rate data buffering for SDR applications as well as independent SpaceWire interfaces. The RTAX2000 manages scrub and configuration of each Xilinx.

Yamamoto, Clifford K↗
NASA NTRS2012

Remotely Powered Reconfigurable Receiver for Extreme Environment Sensing Platforms

Wireless sensors connected in a local network offer revolutionary exploration capabilities, but the current solutions do not work in extreme environments of low temperatures (200K) and low to moderate radiation levels (<50 krad). These sensors (temperature, radiation, infrared, etc.) would need to operate outside the spacecraft/ lander and be totally independent of power from the spacecraft/lander. Flash memory field-programmable gate arrays (FPGAs) are being used as the main signal processing and protocol generation platform in a new receiver. Flash-based FPGAs have been shown to have at least 100 reduced standby power and 10 reduction operating power when compared to normal SRAM-based FPGA technology.

Sheldon, Douglas J.↗
NASA NTRS2012

Flexible Architecture for FPGAs in Embedded Systems

Commonly, field-programmable gate arrays (FPGAs) being developed in cPCI embedded systems include the bus interface in the FPGA. This complicates the development because the interface is complicated and requires a lot of development time and FPGA resources. In addition, flight qualification requires a substantial amount of time be devoted to just this interface. Another complication of putting the cPCI interface into the FPGA being developed is that configuration information loaded into the device by the cPCI microprocessor is lost when a new bit file is loaded, requiring cumbersome operations to return the system to an operational state. Finally, SRAM-based FPGAs are typically programmed via specialized cables and software, with programming files being loaded either directly into the FPGA, or into PROM devices. This can be cumbersome when doing FPGA development in an embedded environment, and does not have an easy path to flight. Currently, FPGAs used in space applications are usually programmed via multiple space-qualified PROM devices that are physically large and require extra circuitry (typically including a separate one-time programmable FPGA) to enable them to be used for this application. This technology adds a cPCI interface device with a simple, flexible, high-performance backend interface supporting multiple backend FPGAs. It includes a mechanism for programming the FPGAs directly via the microprocessor in the embedded system, eliminating specialized hardware, software, and PROM devices and their associated circuitry. It has a direct path to flight, and no extra hardware and minimal software are required to support reprogramming in flight. The device added is currently a small FPGA, but an advantage of this technology is that the design of the device does not change, regardless of the application in which it is being used. This means that it needs to be qualified for flight only once, and is suitable for one-time programmable devices or an application specific integrated circuit (ASIC). An application programming interface (API) further reduces the development time needed to use the interface device in a system.

Clark, Duane I.↗
NASA NTRS2012

Development of Next Generation Memory Test Experiment for Deployment on a Small Satellite

The original Memory Test Experiment successfully flew on the FASTSAT satellite launched in November 2010. It contained a single Ramtron 512K ferroelectric memory. The memory device went through many thousands of read/write cycles and recorded any errors that were encountered. The original mission length was schedule to last 6 months but was extended to 18 months. New opportunities exist to launch a similar satellite and considerations for a new memory test experiment should be examined. The original experiment had to be designed and integrated in less than two months, so the experiment was a simple design using readily available parts. The follow-on experiment needs to be more sophisticated and encompass more technologies. This paper lays out the considerations for the design and development of this follow-on flight memory experiment. It also details the results from the original Memory Test Experiment that flew on board FASTSAT. Some of the design considerations for the new experiment include the number and type of memory devices to be used, the kinds of tests that will be performed, other data needed to analyze the results, and best use of limited resources on a small satellite. The memory technologies that are considered are FRAM, FLASH, SONOS, Resistive Memory, Phase Change Memory, Nano-wire Memory, Magneto-resistive Memory, Standard DRAM, and Standard SRAM. The kinds of tests that could be performed are read/write operations, non-volatile memory retention, write cycle endurance, power measurements, and testing Error Detection and Correction schemes. Other data that may help analyze the results are GPS location of recorded errors, time stamp of all data recorded, radiation measurements, temperature, and other activities being perform by the satellite. The resources of power, volume, mass, temperature, processing power, and telemetry bandwidth are extremely limited on a small satellite. Design considerations must be made to allow the experiment to not interfere with the satellite s primary mission.

MacLeod, Todd↗
NASA NTRS2013

Memory Circuit Fault Simulator

Spacecraft are known to experience significant memory part-related failures and problems, both pre- and postlaunch. These memory parts include both static and dynamic memories (SRAM and DRAM). These failures manifest themselves in a variety of ways, such as pattern-sensitive failures, timingsensitive failures, etc. Because of the mission critical nature memory devices play in spacecraft architecture and operation, understanding their failure modes is vital to successful mission operation. To support this need, a generic simulation tool that can model different data patterns in conjunction with variable write and read conditions was developed. This tool is a mathematical and graphical way to embed pattern, electrical, and physical information to perform what-if analysis as part of a root cause failure analysis effort.

Sheldon, Douglas J.↗
NASA NTRS2013

MRAM Technology Status

Magnetoresistive Random Access Memory (MRAM) is much different from conventional types of memory like SRAM, DRAM, and Flash, where electric charge is used to store information. Instead of exploiting the charge of an electron, MRAM uses its spin to store data. This new type of electronics is known as "spintronics." The primary focus of this report is the current generation of MRAM technology, and its reliability, vendors, and space-readiness.

Heidecker, Jason↗
NASA NTRS2014

Single Event Analysis and Fault Injection Techniques Targeting Complex Designs Implemented in Xilinx-Virtex Family Field Programmable Gate Array (FPGA) Devices

An informative session regarding SRAM FPGA basics. Presenting a framework for fault injection techniques applied to Xilinx Field Programmable Gate Arrays (FPGAs). Introduce an overlooked time component that illustrates fault injection is impractical for most real designs as a stand-alone characterization tool. Demonstrate procedures that benefit from fault injection error analysis.

Single Event Upset Testing↗
NASA NTRS2014

Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled Technologies

We report low-energy proton and low-energy alpha particle single-event effects (SEE) data on a 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) latches and static random access memory (SRAM) that demonstrates the criticality of using low-energy protons for SEE testing of highly-scaled technologies. Low-energy protons produced a significantly higher fraction of multi-bit upsets relative to single-bit upsets when compared to similar alpha particle data. This difference highlights the importance of performing hardness assurance testing with protons that include energy distribution components below 2 megaelectron-volt. The importance of low-energy protons to system-level single-event performance is based on the technology under investigation as well as the target radiation environment.

random access memory↗
NASA NTRS2011

Variable Depth Bragg Peak Method for Single Event Effects Testing

Traditionally, accelerator SEE testing is accomplished by removing the tops of packages so that the IC chips are accessible to heavy ions. However, ICs in some advanced packages cannot be de-lidded so a different approach is used that involves grinding and/or chemically etching away part of the package and the chip from the back side. The parts are then tested from the back side with ions having sufficient range to reach the sensitive volume. More recently, the entire silicon substrate in an SOI/SRAM was removed, making it possible to use low-energy ions with shorter ranges. Where removal of part of the package is not possible, facilities at Michigan State, NASA Space Radiation Laboratory, GANIL (France) and GSI (Germany) offer high-energy heavy ions with long ranges so that the ions can reach the devices' sensitive volumes without much change in the LET. Unfortunately, a run will typically involve only one ion species having a single energy and LET due to the long time it takes to tune a new energy. The Variable Depth Bragg Peak (VDBP) method is similar to the above method in that it involves the use of high-energy heavy ions that are able to pass through the packaging material and reach the device, obviating the need to remove the package. However, the method provides a broad range of LETs from a single ion by inserting degraders in the beam that modify the ion energy and, therefore, the LET. The crux of the method involves establishing a fiduciary point for degrader thickness, i.e., where the Bragg peak is located precisely at the sensitive volume in the device, for which the measured SEU cross-section and the ion LET are both also maxima and can be calculated using a Monte-Carlo program, TRIM. Once the fiduciary point has been established, calibrated high density polyethylene (HDPE) degraders are inserted into or removed from the beam to vary the ion LET at the device in a known manner. After each change of degrader thickness, the SEU cross-section is measured and the corresponding LET calculated from the change in degrader thickness. That information is used to generate a plot of cross-section as a function of ion LET. The advantages of this approach are that the part does not have to be de-lidded and a broad range of LETs is available from a single heavy ion without having to go to non-normal angles of incidence to change the "effective" LET. As we will show, it is possible to obtain an entire curve of cross-section versus LET using just two or three ions. Fig. 1 shows curves of cross-section vs LET for a Freescale 4 Mbit SOI/SRAM measured at the 88" Cyclotron at Berkeley and at NSRL. The open symbols are the data obtained from Berkeley for top-side and back-side irradiation. The solid data points are for the data obtained at NSRL using a device for which the package was intact. The data are for Iron and Gold and cover a range of LETs from 4 MeV.cm2/mg to 84 MeV.cm2/mg. The agreement between the data obtained from Berkeley and from NSRL is excellent, demonstrating that the VDBP method is capable of providing accurate values of cross-section versus LET, at least for the 4 Mbit SRAM. Details of the technique will be included in the final presentation.

Buchner, S.↗
NASA NTRS2015

Single Event Effects in FPGA Devices 2014-2015

This presentation provides an overview of single event effects in FPGA devices 2014-2015 including commercial Xilinx V5 heavy ion accelerated testing, Xilinx Kintex-7 heavy ion accelerated testing. Mitigation study, and investigation of various types of triple modular redundancy (TMR) for commercial SRAM based FPGAs.

Single event upset (SEU)↗
NASA NTRS2016

Goal Structuring Notation in a Radiation Hardening Assurance Case for COTS-Based Spacecraft

A systematic approach is presented to constructing a radiation assurance case using Goal Structuring Notation (GSN) for spacecraft containing COTS parts. The GSN paradigm is applied to an SRAM single-event upset experiment board designed to fly on a CubeSat in January 2017. A custom software language for development of a GSN assurance case is under development at Vanderbilt. Construction of a radiation assurance case without use of hardened parts or extensive radiation testing is discussed.

Radiation Effects Modeling (REM)↗
NASA NTRS2016

Goal Structured Notation in a Radiation Hardening Safety Case for COTS-Based Spacecraft

A systematic approach is presented to constructing a radiation assurance case using Goal Structured Notation (GSN) for spacecraft containing COTS parts. The GSN paradigm is applied to an SRAM single-event upset experiment board designed to fly on a CubeSat November 2016. Construction of a radiation assurance case without use of hardened parts or extensive radiation testing is discussed.

Assurance Case↗
NASA NTRS2016

Single Event Effects in FPGA Devices 2015-2016

This presentation provides an overview of single event effects in FPGA devices 2015-2016 including commercial Xilinx V5 heavy ion accelerated testing, Xilinx Kintex-7 heavy ion accelerated testing, mitigation study, and investigation of various types of triple modular redundancy (TMR) for commercial SRAM based FPGAs.

Xilinx V5↗
NASA NTRS2016

Goal Structuring Notation in a Radiation Hardening Assurance Case for COTS-Based Spacecraft

A systematic approach is presented to constructing a radiation assurance case using Goal Structuring Notation (GSN) for spacecraft containing commercial-off-the-shelf (COTS) parts. The GSN paradigm is applied to an SRAM single-event upset experiment board designed to fly on a CubeSat November 2016. Construction of a radiation assurance case without use of hardened parts or extensive radiation testing is discussed.

Witulski, Arthur↗