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Susceptibility of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects is studied. Devices tested include digital, linear bipolar, and hybrid devices.
Sensitivity of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects is presented. Devices tested include digital, linear, and hybrid devices.
As integrated circuits become more sensitive to charged particles and neutrons, anomalous performance due to single event effects (SEE) is a concern and requires experimental verification and quantification. The Center for Applied Radiation Research (CARR) at Prairie View A&M University has developed experiments as a participant in the NASA ER-2 Flight Program, the APEX balloon flight program and the Student Launch Program. Other high altitude and ground level experiments of interest to DoD and commercial applications are being developed. The experiment characterizes the SEE behavior of high speed and high density SRAM's. The system includes a PC-104 computer unit, an optical drive for storage, a test board with the components under test, and a latchup detection and reset unit. The test program will continuously monitor the stored checkerboard data pattern in the SW and record errors. Since both the computer and the optical drive contain integrated circuits, they are also vulnerable to radiation effects. A latchup detection unit with discrete components will monitor the test program and reset the system when necessary. The first results will be obtained from the NASA ER-2 flights, which are now planned to take place in early 1998 from Dryden Research Center in California. The series of flights, at altitudes up to 70,000 feet, and a variety of flight profiles should yield a distribution of conditions for correlating SEES. SEE measurements will be performed from the time of aircraft power-up on the ground throughout the flight regime until systems power-off after landing.
The Vorago Technologies RH-OBC-1 is a CubeSat Kit Bus compatible single board computer with a Vorago VA10820 ARM Cortex-M0 microcontroller at its core. The board also includes a set of common peripheral integrated circuits, like voltage regulators, non-volatile memories (NVM), an analog-to-digital converter (ADC), a watchdog/supervisor, and a Controller Area Network (CAN) bus transceiver. High-energy proton (200 MeV) testing was conducted at both board and component levels to investigate single-event effects.
Report describes experimental study of effects of temperature on vulnerability of integrated-circuit memories and other electronic logic devices to single-event effects - spurious bit flips or latch-up in logic state caused by impacts of energetic ions. Involved analysis of data on 14 different device types. In most cases examined, vulnerability to these effects increased or remain constant with temperature.
NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment are often limited by their susceptibility to single event effects (SEE). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is and adequate understanding of the test condition is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), and single-event transient (SET). For total ionizing dose (TID) and displacement damage dose (DDD) results, see a companion paper submitted to the 2015 Institute of Electrical and Electronics Engineers (IEEE) Nuclear and Space Radiation Effects Conference (NSREC) Radiation Effects Data Workshop (REDW) entitled "compendium of Current Total Ionizing Dose and Displacement Damage for Candidate Spacecraft Electronics for NASA by M. Campola, et al.
In this presentation, the driving factors changing the world of single-event effects (SEE) testing will be discussed. This includes both semiconductor technological advances and morphing space system philosophies. Considerations for meeting these new challenges will then follow.
We present the results of Single Event Effects (SEE) testing with high energy protons and with low and high energy heavy ions for electrical components considered for Low Earth Orbit (LEO) and for deep space applications.
We present the results of Single Event Effects (SEE) testing with high energy protons and with low and high energy heavy ions for electrical components considered for Low Earth Orbit (LEO) and for deep space applications.
Motivation for this work is: (1) Accurately characterize digital signal processor (DSP) core single-event effect (SEE) behavior (2) Test DSP cores across a large frequency range and across various input conditions (3) Isolate SEE analysis to DSP cores alone (4) Interpret SEE analysis in terms of single-event upsets (SEUs) and single-event transients (SETs) (5) Provide flight missions with accurate estimate of DSP core error rates and error signatures.
This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.
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We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy-ion induced single-event effects and proton-induced damage. We also present data on the susceptibility of parts to functional degradation resulting from total ionizing dose at low dose rates (0.003-0.33 Rads(Si)/s). Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog to Digital Converters (ADCs), Digital to Analog Converters (DACs), and DC-DC converters, among others.
We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy-ion induced single-event effects and proton-induced damage. Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog-to-Digital Converters (ADCs), Digital-to-Analog Converters (DACs), and DC-DC converters, among others.
We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects. Devices tested include digital, analog, linear bipolar, and hybrid devices, among others.
We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects. Devices tested include digital, analog, linear bipolar, and hybrid devices, among others.
We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects, total ionizing dose and proton-induced damage. Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog-to-Digital Converters (ADCs), Digital-to-Analog Converters (DACs), and DC-DC converters, among others.
Recent testing of the EPC1000 series eGaN FETs has shown sensitivity to Single Event Effects (SEE) that are destructive. These effects are most likely the failure of the very thin gate structure in HEMT architecture. EPC has recently changed the doping of the substrate to improve the performance and the SEE response. This testing compares the SEE response of both devices.