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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Application of the MOS C-V technique to determine impurity concentrations and surface parameters on the diffused face of silicon solar cells

An experimental and theoretical investigation of the feasibility of using the MOS C-V (capacitance-voltage) technique to determine impurity and surface state concentrations on the diffused face of Si solar cells with Ta2O5 coatings. Impurity concentration 10 A from the diffused surface is found to be 2.9 times 10 to the 20th power per cu cm. Charge density in surface and oxide states is 2.1 times 10 to the 13th power per sq cm. These data agree with theoretical predictions.-

Weinberg, I.↗
NASA NTRS1974

A measurement technique of time-dependent dielectric breakdown in MOS capacitors

The statistical nature of time-dependent dielectric breakdown characteristics in MOS capacitors was evidenced by testing large numbers of capacitors fabricated on single wafers. A multipoint probe and automatic electronic visual display technique are introduced that will yield statistical results which are necessary for the investigation of temperature, electric field, thermal annealing, and radiation effects in the breakdown characteristics, and an interpretation of the physical mechanisms involved. It is shown that capacitors of area greater than 0.002 sq cm may yield worst-case results, and that a multipoint probe of capacitors of smaller sizes can be used to obtain a profile of nonuniformities in the SiO2 films.

Li, S. P.↗
NASA NTRS1976

Time-dependent MOS breakdown

A general model for time-dependent breakdown in metal-oxide-silicon (MOS) structures is developed and related to experimental measurements on samples deliberately contaminated with Na. A statistical method is used for measuring the breakdown probability as a function of log time and applied field. It is shown that three time regions of breakdown can be explained respectively in terms of silicon surface defects, ion emission from the metal interface, and lateral ion diffusion at the silicon interface.

Li, S. P.↗
NASA NTRS1976

Model for thickness dependence of radiation charging in MOS structures

The model considers charge buildup in MOS structures due to hole trapping in the oxide and the creation of sheet charge at the silicon interface. The contribution of hole trapping causes the flatband voltage to increase with thickness in a manner in which square and cube dependences are limiting cases. Experimental measurements on samples covering a 200 - 1000 A range of oxide thickness are consistent with the model, using independently obtained values of hole-trapping parameters. An important finding of our experimental results is that a negative interface charge contribution due to surface states created during irradiation compensates most of the positive charge in the oxide at flatband. The tendency of the surface states to 'track' the positive charge buildup in the oxide, for all thicknesses, applies both in creation during irradiation and in annihilation during annealing. An explanation is proposed based on the common defect origin of hole traps and potential surface states.

Viswanathan, C. R.↗
NASA NTRS1977

The charge-flow transistor - A new MOS device

A new device, the charge-flow transistor (CFT), has been developed to achieve integrated MOS compatibility in sensor applications, such as gas, humidity, and fire detection, where one is interested in monitoring the transverse resistance of a thin film. The resistive material is incorporated into the gate structure of the CFT in such a way that there is a time delay between the application of the gate-to-source voltage and the appearance of a complete channel. This time delay depends on the resistivity of the thin film. A theory of device operation is presented, together with experimental results on the first CFT's. These results confirm the principles of operation, and demonstrate the utility of the CFT for making fully integrated sensing devices.

Senturia, S. D.↗
NASA NTRS1978

Automated tester for MOS devices

Automated system rapidly diagnoses MOS integrated circuits. Its programed electronics investigate transistor and cell characteristics to compile data needed for screening. Program can be changed rapidly to alter test procedures, test duration, and precision.

Cockrum, R. H.↗
NASA NTRS1977

The effect of oxidation-expanded defects upon MOS parameters

Implantation of Ne ions was chosen as a means of introducing a uniformly distributed quantitatively controllable and reproducible amount of microdefects at the silicon surface. Each wafer was ion-implanted on one half of its surface, the other half remaining as a control. Seven implant fluences from 1 trillion to 5 by 10 to the 14th power Ne ions/sq cm were used. The fluences, as well as the concentrations of defects expanded by the subsequent gate oxidation, were correlated with seven different MOS parameters. For implant fluences of 10 to the 14th power per sq cm and above, increasing stacking-fault densities were found. The oxide defect density associated with time-dependent breakdown increased significantly with Ne dose. The presence of oxidation-expanded defects drastically increases the surface-generation velocity and decreases the bulk lifetime. Slight increases in flatband voltage and surface-state density occurred only for the wafers having the greatest defect concentrations. Oxidation of a P-containing damaged silicon surface results in a greater pileup of P at the surface than occurs for the oxidation of a similar but undamaged surface. It appears that the expanding defects restrain the diffusion of P inward from the surface.

Prussin, S.↗
NASA NTRS1980

Measuring charge nonuniformity in MOS devices

Convenient method of determining inherent lateral charge non-uniformities along silicon dioxide/silicon interface of metal-oxide-semiconductor (MOS) employs rapid measurement of capacitance of interface as function of voltage at liquid nitrogen temperature. Charge distribution is extracted by fast-Fourier-transform analysis of capacitance voltage (C-V) measurement.

Maserjian, J.↗
NASA NTRS1980

Multilayer metalization of MOS IC's

Modified ion-bombardment technqiue interconnects MOS circuit elements without affecting circuit parameters. Multilevel metalization involves: surface treatment prior to metalization; first metalization; metal pattern definition and photoresist removal; dielectric deposition; second metalization; and final dielectric deposition.

Bouldin, D. L.↗
NASA NTRS1980

Models of MOS and SOS devices

Quarterly report describes progress in three programs: dc sputtering machine for aluminum and aluminum alloys; two dimensional computer modeling of MOS transistors; and development of computer techniques for calculating redistribution diffusion of dopants in silicon on sapphire films.

Gassaway, J. D.↗
NASA NTRS1979

Prediction of field-time-dependent gate-oxide breakdown in MOS devices

The model for field-time-dependent breakdown in the gate oxide of MOS devices is extended and verified with experimental data. The model permits accelerated tests at high fields which can be used to predict gate-oxide breakdowns at much longer times at normal operating fields.

Li, S. P.↗
NASA NTRS1981

Method of making V-MOS field effect transistors utilizing a two-step anisotropic etching and ion implantation

A method of making V-MOS field effect transistors is disclosed wherein a masking layer is first formed over a surface of a crystalline substrate. An aperture is then formed in the masking layer to expose the surface of the substrate. An anisotropic etchant is applied to the exposed surface so that a groove having a decreasing width within increasing depth is formed. However, the etch is not allowed to go to completion with the result that a partially formed V-shaped groove is formed. Ions are accelerated through the aperture for implantation in the crystalline substrate in the lower portion of the partially formed V-shaped groove. Thereafter, an anisotropic etchant is reapplied to the partially formed V-shaped groove, and the etch is allowed to go to completion.

Jhabvala, M. D.↗
NASA NTRS1982

A monolithic lead sulfide-silicon MOS integrated-circuit structure

A technique is developed for directly integrating infrared photoconductive PbS detector material with MOS transistors. A layer of chromium, instead of aluminum, is deposited followed by a gold deposition in order to ensure device survival during the chemical deposition of the PbS. Among other devices, a structure was fabricated and evaluated in which the PbS was directly coupled to the gate of a PMOS. The external bias, load, and source resistors were connected and the circuit was operated as a source-follower amplifier. Radiometric evaluations were performed on a variety of different MOSFETs of different geometry. In addition, various detector elements were simultaneously fabricated to demonstrate small element capability, and it was shown that elements of 25 x 25 microns could easily be fabricated. Results of room temperature evaluations using a filtered 700 K black body source yielded a detectivity at peak wavelength of 10 to the 11th cm (root Hz)/W at 100 Hz chopping frequency.

Jhabvala, M. D.↗
NASA NTRS1983

Recovery of damage in rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays

This paper reports on the recovery properties of rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays. The results indicated that complex recovery properties controlled the damage sensitivities of the tested parts. The results also indicated that damage sensitivities depended on dose rate, total dose, supply bias, gate bias, transistor type, radiation source, and particle energy. The complex nature of these dependencies make interpretation of LSI device performance in space (exposure to entire electron and proton spectra) difficult, if not impossible, without respective ground tests and analyses. Complete recovery of n-channel shifts was observed, in some cases within hours after irradiation, with equilibrium values of threshold voltages greater than their pre-irradiation values. This effect depended on total dose, radiation source, and gate bias during exposure. In contrast, the p-channel shifts recovered only 20 percent within 30 days after irradiation.

Brucker, G. J.↗
NASA NTRS1983

The damage equivalence of electrons, protons, alphas and gamma rays in rad-hard MOS devices

This paper reports on a study of damage equivalence in rad-hard MOS devices with 100,000 rads (SiO2) capability. Damage sensitivities for electrons of 1, 2, 3, 5, and 7 MeV, protons of 1, 3, 7, 22, and 40 MeV, 3.4-MeV alphas, and Co-60 gammas were measured and compared. Results indicated that qualitatively the same charge recombination effects occurred in hard oxide devices for doses of 100,000 rads (SiO2) as in soft oxide parts for doses of 1 to 4 krads (SiO2). Consequently, damage equivalency or non-equivalency depended on radiation type and energy. However, recovery effects, both during and after irradiation, controlled relative damage sensitivity and its dependency on total dose, dose rate, supply bias, gate bias, radiation type, and energy. Correction factors can be derived from these data or from similar tests of other hard oxide type, so as to properly evaluate the combined effects of the total space environment.

Stassinopoulos, E. G.↗
NASA NTRS1983

Silicon superlattices. 2: Si-Ge heterostructures and MOS systems

Five main areas were examined: (1) the valence-and conduction-band-edge electronic structure of the thin layer ( 11 A) silicon-superlattice systems; (2) extension of thin-layer calculations to layers of thickness 11 A, where most potential experimental interest lies; (3) the electronic structure of thicker-layer (11 to 110 A) silicon superlattices; (4) preliminary calculations of impurity-scattering-limited electron mobility in the thicker-layer superlattices; and (5) production of the fine metal lines that would be required to produce on MOS superlattice.

Moriarty, J. A.↗
NASA NTRS1984

Dose rate effects in MOS microcircuits

Three read/write random access memories, AM91L24, HM1-6514, and MWS 5114, were subjected to total dose irradiation at three dose rates, with electrical testing after each increment of dosage. Annealing measurements were performed after the radiation tests were completed. The AM91L24 showed a strong dose rate effect and substantial post-irradiation annealing of radiation-induced damage. The dose rate effect was that a lower dose rate produced less net damage than an eqivalent total dose applied at a higher rate. The HM1-6514 showed essentially no dose rate effect and no annealing damage, and the MWS 5114 exhibited a moderate effect with some annealing. It was concluded that dose rate is an important parameter in radiation test procedures for MOS microcircuits and that annealing measurements may be important evaluation aids for such tests.

Cleveland, D. G.↗
NASA NTRS1984

Total-dose and dose-rate dependence of proton damage in MOS devices during and after irradiation

Rad-hard CMOS/bulk inverters with input gates high and low were irradiated by protons with a nominal energy of 8 MeV in an effort to determine the total-dose and dose-rate dependence of threshold voltage shifts, both during and immediately after irradiation and over extended periods of time thereafter. It is shown that the effects in rad-hard MOS devices which are produced by specific proton and electron energies in the space environment could be simulated by cobalt-60 induced effects through careful and proper selection of total does and dose rates. This selection must be based on an experimentally established relationship of Co-60 to electron or proton damage. It is demonstrated that the simulation can be accomplished both during and after irradiation, in the long-term postirradiation period, as well as in the damage state immediately after bombardment.

Stassinopoulos, E. G.↗