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Results for “Electromigration”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Electromigration in thin-film photovoltaic module metallization systems

Electromigration as a possible thin-film module failure mechanism was investigated using several specially made, fully aluminized thin-film photovoltaic (TF-PV) modules. The effect of electromigration, as determined experimentally by measuring increases in electrical resistance across scribe lines, can be expressed as the product of a damage function, which correlates degradation rate with operating conditions such as current density and temperature, and a susceptibility function, which is defined by module design parameters, particularly aluminum purity and the configuration of the intercell region. Experimental measurements and derived acceleration factors suggest that open-circuit failure resulting from electromigration should not be a serious problem in present state-of-the-art TF-PV modules. Nevertheless, significant intercell resistance increases can result from long-term electromigration exposure, especially in future high-efficiency modules. The problem can be alleviated, however, by appropriate metallization applications and/or proper design of the intercell region.

Wen, L.↗
NASA NTRS1982

Electromigration process for the purification of molten silicon during crystal growth

A process for the purification of molten materials during crystal growth by electromigration of impurities to localized dirty zones. In the Czochralski crystal growing process, the impurities are electromigrated away from the crystallization interface by applying a direct electrical current to the molten silicon for electromigrating the charged impurities away from the crystal growth interface. The edge-defined film-fed crystal growth process, a direct electrical current is applied between the two faces which are used in forming the molten silicon into a ribbon. The impurities, migrated to one side only of the crystal ribbon, may be removed or left in place. If left in place, they will not adversely affect the ribbon when used in solar collectors. The migration of the impurity to one side only of the silicon ribbon is especially suitable for use with asymmetric dies which preferentially crystallize uncharged impurities along one side or face of the ribbon.

Shlichta, P. J.↗
NASA NTRS1991

Five-Segment Interconnection For Electromigration Tests

Proposed integrated-circuit conductive pattern intended for use in electromigration lifetime testing of interconnection lines of integrated circuits. Designed for collection of statistics on electromigration from smallest possible area. Includes 5 interconnection segments with Kelvin voltage taps, with total of 12 contact pads, and provides for simultaneous measurements on all of segments. Attempts to minimize thermal gradients within each segment and conforms to guidelines on electromigration test structures promulgated by National Institute of Standards and Technology (NIST).

Hannaman, David J.↗
NASA NTRS2001

Effects of via-conductor geometry in the electromigration failure of Al:Cu wires

Electromigration (EM) experiments conducted using two types of via/plug to conductor alignment indicate a geometrical dependence of electromigration failure in Al:Cu conductors. The resistance vs time curves show distinctive steps when the alignment is parallel. This is explained by a successive loss of conductivity through the plug due to void formation. In the perpendicular via/conductor arrangement, resistance increases by smaller and closely spaced steps. EM experiments without vias, found that the conductor life under stress increases by at least an order of magnitude. Kinetic studies at four temperatures between 180-240 C found activation energies to be 1.0 plus or minus 0.1eV.

Al:Cu accelerated testing electromigration activat↗
NASA NTRS1988

Temperature control in wafer-level testing of large multi-segment electromigration test structures

The paper describes two methods for maintaining a constant metallization temperature throughout a wafer-level isothermal electromigration test of large multisegment test structures where Joule-heating is high and chip to chuck thermal contact is poor. In the first method, an initial calibration of Joule heating versus metal temperature is carried out. During the isothermal electromigration test, the Joule heating is continuously monitored and the chuck temperature is adjusted based on the calibration results to maintain a constant metal temperature. In the second method, temperature sensors are fabricated on the chip and then the sensors are used to monitor the chip temperature directly. The chuck temperature is then adjusted as needed.

Zamani, Nasser↗
NASA NTRS1991

Designing Accelerated Tests Of Electromigration

Method for design of accelerated tests of electromigration (as in microscopic conductors in integrated circuits) based partly on simplified mathematical model of electromigration and partly on error analysis. Objective to determine quickly operating life of tested components under normal operating conditions by extrapolation from lifetime measurements at operating stresses greater than normal. Involves compromise between reducing testing time by increasing stresses and reducing uncertainty in extrapolated lifetime by decreasing stresses.

Buehler, Martin G.↗
NASA NTRS1991

Electromigration failure in YBa2Cu3O(7-x) thin films

Electromigration failure in highly oriented YBa2Cu3O(7-x) thin films below the superconducting transition temperature is reported here for the first time. The film on SrTiO3 failed at 86 K, 230,000 A/sq cm, while that on LaAlO3 failed at 84 K, 930,000 A/sq cm. Scanning electron microscopy and energy dispersive X-ray analysis of the films after failure shows that Cu migrates preferentially away from the failure region toward the electrode.

Vitta, Satish↗
NASA NTRS1980

Liquid-phase electroepitaxy - Dopant segregation

A theoretical model is presented which accounts for the dopant segregation in liquid-phase electroepitaxy in terms of dopant transport in the liquid phase (by electromigration and diffusion), the growth velocity, and the Peltier effect at the substrate-solution interface. The contribution of dopant electromigration to the magnitude of the effective segregation coefficient is dominant in the absence of convection; the contribution of the Peltier effect becomes significant only in the presence of pronounced convection. Quantitative expressions which relate the segregation coefficient to the growth parameters also permit the determination of the diffusion constant and electromigration mobility of the dopant in the liquid phase. The model was found to be in good agreement with the measured segregation characteristics of Sn in the electroepitaxial growth of GaAs from Ga-As solutions. For Sn in Ga-As solution at 900 C the diffusion constant was found to be 4 x 10 to the -5 sq cm/s and the electromigration velocity (toward the substrate with a positive polarity 2 x 10 to the -5 cm/s current density of 10 A/sq cm.

Lagowski, J.↗
NASA NTRS2007

Treatment Prevents Corrosion in Steel and Concrete Structures

In the mid-1990s, to protect rebar from corrosion, NASA developed an electromigration technique that sends corrosion-inhibiting ions into rebar to prevent rust, corrosion, and separation from the surrounding concrete. Kennedy Space Center worked with Surtreat Holding LLC, of Pittsburgh, Pennsylvania, a company that had developed a chemical option to fight structural corrosion, combining Surtreat's TPS-II anti-corrosive solution and electromigration. Kennedy's materials scientists reviewed the applicability of the chemical treatment to the electromigration process and determined that it was an effective and environmentally friendly match. Ten years later, NASA is still using this approach to fight concrete corrosion, and it has also developed a new technology that will further advance these efforts-a liquid galvanic coating applied to the outer surface of reinforced concrete to protect the embedded rebar from corrosion. Surtreat licensed this new coating technology and put it to use at the U.S. Army Naha Port, in Okinawa, Japan. The new coating prevents corrosion of steel in concrete in several applications, including highway and bridge infrastructures, piers and docks, concrete balconies and ceilings, parking garages, cooling towers, and pipelines. A natural compliment to the new coating, Surtreat's Total Performance System provides diagnostic testing and site analysis to identify the scope of problems for each project, manufactures and prescribes site-specific solutions, controls material application, and verifies performance through follow-up testing and analysis.

Source record↗
DOE OSTI2026

Ion Transport in Charged Membranes: Linking Electric-Field-Driven Mechanisms to Pore Size via Perturbation Analysis

Ion-exchange membranes are a critical component in electrochemical systems. Nevertheless, the understanding and modeling of ion transport within these porous structures have been limited by particular complexity reductions, either ignoring the dimensionality of their porous network architecture or imposing geometric assumptions (i.e., overlapping double layers). Before addressing this morphology-transport gap, a framework that relates the driving forces of transport to the geometry of a single pore is required. In this work, our modeling domain consists of a two-dimensional single pore with charged walls, connecting two identical electrolyte reservoirs. Using the Poisson-Nernst-Planck equations and regular perturbation theory, we decouple the electric fields and analyze the driving forces of ion transport, specifically electromigration and induced electroosmosis within the pore. These processes are described as analytical functions of the interaction aspect ratio, ?, defined as the ratio of the pore radius to the Debye length. Using this parameter, our study (i) describes the interplay between electromigrative and electroosmotic mechanisms that set ionic conductivity, (ii) identifies a dimensionless group of intrinsic electrolyte properties that indicates the predominant driving force, and (iii) provides a qualitative, confinement-dependent perspective on selectivity in ion-conducting membranes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1982

Feasibilty analyses of electroepitaxial research and development accommodations. Volume 2: Electroepitaxial growth of GaAs

The technique of electromigration, i.e., electric field induced forced convection, can be used to grow semiconductor material and other compounds from solution by passing electric current through the growth interface while the temperature of the system is maintained constant. Current controlled electromigration, referred to as electroepitaxy, was successfully applied to grow epitaxial layers of various semiconductors and garnets.

Source record↗
NASA NTRS1970

A Study of the Electrotransport in Thin Films: An Advanced Method for the Study of Electrotransport in Thin Films Using Electrical Resistance Measurements

To date, very little is understood about electrotransport in thin films. One reason for this is the lack of methods in which electromigration can be adequately monitored dynamically. In this thesis, a new nondestructive method for the study of the electrotransport phenomenon in thin aluminum films is presented. This method makes use of electrical resistance measurements of various regions along the test sample to monitor changes in resistance resulting from electromigration. The advantage of this method is that resistance changes can be observed long before void formation can be seen using standard microscopy methods. In order to achieve the best efficiency using this method, special consideration must be given to the design of the sample. Design problems and their respective solutions are given. The results of the electrical resistance measurements are interpreted by means of photographs taken with an scanning electron microscope. The increase in resistance of the aluminum samples is interpreted to be due to void formation. The expected decrease in resistance near the anode was never observed. It is shown that mass accumulation takes on the form of hillocks and whiskers on the surface of the aluminum film, which does not contribute appreciably to conductivity.

Hummel, R. E.↗