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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The Texas Instruments'™ (TI) MAX4595 was tested for single event latch-up (SEL) response at the Texas A&M University Cyclotron Facility (TAMU) on 26 October 2014. The device was exercised in varied load conditions to replicate its intended application with concerns about destructive effects on the commercial device.
Testing was done to characterize the Texas Instruments Operational Amplifiers OPA691 single event effects (SEE) response. The primary SEE concerns for this device are single event latchup (SEL) and single event transients (SETs). Testing focused on determining susceptibility to SEL and characterizing the SET response. Testing occurred on November 11, 2022.
Testing was done to characterize the Texas Instruments Operational Amplifiers OPA842 single event effects (SEE) response. The primary SEE concerns for this device are single event latchup (SEL) and single event transients (SETs). Testing focused on determining susceptibility to SEL and characterizing the SET response. Testing occurred on November 11, 2022.
The purpose of this testing was to characterize the Texas Instruments SNV54LVC00AW for single-event latchup (SEL) in support of a NASA GSFC flight program. The SNV54LVC00A quadruple 2-input positive-NAND gate. These devices were tested at the Berkeley Accelerator Space Effects (BASE) Facility at Lawrence Berkeley National Laboratory (LBNL) where they were irradiated with the 10 MeV/amu heavy ion cocktail.
The primary purpose of this testing is to characterize the Texas Instruments LMV7219 comparator for single-event latchup (SEL) susceptibility. These data will be used to assess the Single-Event Latchup (SEL) risk for the OSIRIS-REx Laser Altimeter (OLA). A secondary goal is to assess the susceptibility of the comparator to single-event transients (SET) and other nondestructive Single-Event Effects (SEE).
The primary purpose of this testing was to characterize the Texas Instruments TLV5618 12-bit digital-to-analog converter (DAC) for single-event latchup (SEL) susceptibility. These data will be used to assess the SEL risk for the OSIRIS-REx Laser Altimeter (OLA). A secondary goal is to assess the susceptibility of the DAC to single-event transients (SET), single-event upsets (SEU), and other nondestructive SEE.
The purpose of this testing was to characterize the pulsed-laser-induced single event effect (SEE) susceptibility of the Texas Instruments LM7171 voltage feedback amplifier. The test was conducted at the Naval Research Laboratory using their two-photon absorption (TPA) laser.
The purpose of this test was to characterize the single-event effects (SEE) susceptibility of the Texas Instrument (TI) DRV8881 2.5A Dual H-Bridge Motor Driver. The device’s output was monitored for changes during exposure to heavy-ions at Lawrence Berkeley National Laboratory (LBNL) 88-inch Cyclotron. The main goal of testing was to test for destructive SEEs. Nondestructive SEEs were recorded during testing but not fully characterized. Testing was performed on November 9th and 11th, 2022.
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This study was to determine the destructive single-event effect (SEE) susceptibility of the DS25BR100 series Low-Voltage Differential Signaling (LVDS) Buffers with Pre-emphasis and Equalization (DS25BR100, 110, and 120). The device was monitored primarily for destructive events while exposing it to a heavy ion beam at the Texas A&M University’s (TAMU) K500 Cyclotron.
Thermal, life, and mechanical environment effects on solid integrated circuits of diffused silicon
A preliminary evaluation of environmental capabilities was undertaken on toggle switches and on Apollo-type toggle switches. The purpose of this evaluation was to take a first look at their tested capabilities for the purpose of determining whether the candidate hardware appears to have a good chance of successfully completing a detailed envrionmental qualification test program.
Very-large area high-performance CCD image sensors with 800 x 800 pixel format have been successfully fabricated and operated on the basis of a three-level polysilicon gate technology. They are thinned to 8 microns over the entire 12.2 x 12.2 mm active area, and are used in the rear illumination mode. The light transfer characteristic has a gamma value of 1.000 + or - 0.002 over most of the dynamic range. Analysis of the noise behavior shows that the device SNR is shot-noise-limited over most of the dynamic range. Simple on-chip signal processing can be performed using an integration well to noiselessly collect signal charge from multiple pixels prior to reading out the charge. A UV-sensitive phosphor has been applied to the chip, yielding a device capable of imaging at wavelengths from the vacuum UV to the near IR.
The present investigation is concerned with the suitability of the virtual phase CCD imager for frontside detection of electrons up to 25 keV. The investigation has the objective to determine if the imager can be used in the frontside mode with a photocathode to detect very low light levels in astronomical applications, the ultimate goal being individual photon detection. It is found that the standard virtual phase imager will function properly over an extended period at low levels of 20 kV electron irradiation consistent with photon counting applications. The imager can detect individual primary electrons with nearly 100 percent efficiency. However, further studies are needed to determine the mechanisms for the flat band shifts so that the imager design may be modified to eliminate or at least reduce them.
Thin CCDs with precise control of thickness and surface quality allow astronomers to optimize chips for specific applications. A means of mechanically thinning a TI 800 x 800 CCD with an abrasive slurry of aluminum oxide is presented. Using the same techniques, the abrasives can be replaced with a chemical solution to eliminate subsurface damage. A technique of mounting the CCD which retains the high quality surface generated during thinning is also demonstrated. This requires the backside of the chip to be bonded to a glass window which closely matches silicon's thermal expansion properties. Thinned CCDs require backside treatment to enhance blue and UV quantum efficiency. Two methods are discussed which may be effective with this mounting system.
An assessment of automatic speech processing technology is presented. Fundamental problems in the development and the deployment of automatic speech processing systems are defined and a technology forecast for speech systems is presented.
The efficiency, of the electronics plays a large part in determining the overall spacecraft power requirements to operate the cooler as well as determining the thermal dissipation characteristics of the various electrical components. The results of all the performance measurements are presented in the paper.
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