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Results for “electromigration”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Characterization of electromigration-induced short-range stress development in Al(0.25 at. % Cu) conductor line

Scanning x-ray microbeam topography and fluorescence experiments were conducted in situ to study the electromigration behavior of a 0.5 μm thick, 10 μm wide, and 200 μm long Al(0.25 at. % Cu) conductor line with 1.5 μm-thick SiO2 passivation on a single crystal Si substrate. The strain sensitivity of x-ray topography measurement allowed detailed examination of the electromigration-induced stress distribution and evolution in the conductor line in response to the depletion of Cu solute early in the electromigration process. Upon electromigration at 0.4 MA/cm2 and 303 °C, a short-range stress gradient was quickly induced by Al migration in the Cu-depleted cathode region to counteract further Al flow. The stress gradient was fully developed during the 5.3 h incubation time, extending over the critical Blech length of about 66 μm from the cathode end. Plastic deformation then occurred at the downstream end of the Cu-depleted region. The preferential electromigration of Cu did not cause detectable stress change outside the Cu-depleted region, except for the significant stress development from the Al2Cu precipitation at the anode end which appeared to initiate the fracture in the passivation. Preliminary finite difference modeling was undertaken to simulate the experimental observations, from which important parameters dictating electromigration in Al(Cu) line were extracted: an apparent effective valence of −5.6 and −1.9 for Cu and Al in Al(Cu), respectively, and a critical Cu concentration of 0.16 at. % above which Al grain boundary diffusion is effectively blocked.

Physics↗
DOE OSTI2022

Resonantly Enhanced Electromigration Forces for Adsorbates on Graphene

We investigate the electromigration forces for weakly bonded adsorbates on graphene by using density-functional based calculations. We find that the nature of electromigration forces on an adsorbate critically depends on the energy level alignment between the adsorbate state and the Fermi level of the graphene. For a resonant adsorbate, whose frontier orbitals lie close to the Fermi level, the electromigration force is dominated by the electron wind force that is strongly enhanced along the electron flow direction, irrespective of the sign of the adsorbate charge. For a nonresonant adsorbate, the electromigration force is essentially the direct force that depends on the adsorbate charge. We also show that the magnitude of electromigration forces can be continuously tunable through electrostatic gating for resonant adsorbates. Our results provide new insight for understanding and controlling how nanoscale objects behave in or on host materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Highly selective ion separations based on counter-flow electromigration in nanoporous membranes

Highly selective ion separations are vital for recovering important salts, and membrane-based techniques may enable environmentally friendly ion separations that operate continuously. This study demonstrates that simply opposing convective flow with electromigration in track-etched membranes leads to remarkable selectivities among monovalent ions. Because the membrane-pore diameters are orders of magnitude larger than the ion diameters, advection moves all ions at the same velocity, whereas electrophoretic velocities are proportional to ion mobilities. Thus during counter-flow cation electromigration, less mobile cations have lower electromigration velocity components and pass through porous membranes more rapidly than more mobile cations. Using membranes with 400 nm pores, counter-flow electromigration gives Li + /K + selectivities of 100 and Li + /Na + selectivities around 30 in mixed-salt studies. In this work, numerical simulations based on the extended Nernst-Planck equation agree with trends in experimental data and highlight the importance of high Péclet numbers, high current-to-flow ratios, and uniform current distributions for achieving high selectivities. Importantly, experimental separations give high selectivities at 0.3 M ionic strength and low Li + /K + ratios, which suggest these methods may also work in brine solutions. Nevertheless, energy costs for such separations are high.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1988

Electromigration in thin-film photovoltaic module metallization systems

Electromigration as a possible thin-film module failure mechanism was investigated using several specially made, fully aluminized thin-film photovoltaic (TF-PV) modules. The effect of electromigration, as determined experimentally by measuring increases in electrical resistance across scribe lines, can be expressed as the product of a damage function, which correlates degradation rate with operating conditions such as current density and temperature, and a susceptibility function, which is defined by module design parameters, particularly aluminum purity and the configuration of the intercell region. Experimental measurements and derived acceleration factors suggest that open-circuit failure resulting from electromigration should not be a serious problem in present state-of-the-art TF-PV modules. Nevertheless, significant intercell resistance increases can result from long-term electromigration exposure, especially in future high-efficiency modules. The problem can be alleviated, however, by appropriate metallization applications and/or proper design of the intercell region.

Wen, L.↗
DOE OSTI2018

Thermoreflectance imaging of electromigration evolution in asymmetric aluminum constrictions

Electromigration (EM) is a phenomenon whereby the flow of current in metal wires moves the underlying atoms, potentially inducing electronic interconnect failures. The continued decrease in commercial lithographically defined feature sizes means that EM presents an increasing risk to the reliability of modern electronics. To mitigate these risks, it is important to look for novel mechanisms to extend lifetime without forfeiting miniaturization. Typically, only the overall increase in the interconnect resistance and failure voltage are characterized. However, if the current flows non-uniformly, spatially resolving the resulting hot spots during electromigration aging experiments may provide better insights into the fundamental mechanisms of this process. Here in this study, we focus on aluminum interconnects containing asymmetric reservoir and void pairs with contact pads on each end. Such reservoirs are potential candidates for self-healing. Thermoreflectance imaging was used to detect hot spots in electrical interconnects at risk of failure as the voltage was gradually increased. It reveals differential heating with increasing voltage for each polarity. We find that while current flow going from a constriction to a reservoir causes a break at the void, the identical structure with the opposite polarity can sustain higher current (J = 21 × 10 6 A/cm 2 ) and more localized joule heating and yet is more stable. Ultimately, a break takes place at the contact pad where the current flows from narrow interconnect to larger pads. In summary, thermoreflectance imaging with submicron spatial resolution provides valuable information about localized electromigration evolution and the potential role of reservoirs to create more robust interconnects.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1982

Electromigration process for the purification of molten silicon during crystal growth

A process for the purification of molten materials during crystal growth by electromigration of impurities to localized dirty zones. In the Czochralski crystal growing process, the impurities are electromigrated away from the crystallization interface by applying a direct electrical current to the molten silicon for electromigrating the charged impurities away from the crystal growth interface. The edge-defined film-fed crystal growth process, a direct electrical current is applied between the two faces which are used in forming the molten silicon into a ribbon. The impurities, migrated to one side only of the crystal ribbon, may be removed or left in place. If left in place, they will not adversely affect the ribbon when used in solar collectors. The migration of the impurity to one side only of the silicon ribbon is especially suitable for use with asymmetric dies which preferentially crystallize uncharged impurities along one side or face of the ribbon.

Shlichta, P. J.↗
NASA NTRS1991

Five-Segment Interconnection For Electromigration Tests

Proposed integrated-circuit conductive pattern intended for use in electromigration lifetime testing of interconnection lines of integrated circuits. Designed for collection of statistics on electromigration from smallest possible area. Includes 5 interconnection segments with Kelvin voltage taps, with total of 12 contact pads, and provides for simultaneous measurements on all of segments. Attempts to minimize thermal gradients within each segment and conforms to guidelines on electromigration test structures promulgated by National Institute of Standards and Technology (NIST).

Hannaman, David J.↗
NASA NTRS2001

Effects of via-conductor geometry in the electromigration failure of Al:Cu wires

Electromigration (EM) experiments conducted using two types of via/plug to conductor alignment indicate a geometrical dependence of electromigration failure in Al:Cu conductors. The resistance vs time curves show distinctive steps when the alignment is parallel. This is explained by a successive loss of conductivity through the plug due to void formation. In the perpendicular via/conductor arrangement, resistance increases by smaller and closely spaced steps. EM experiments without vias, found that the conductor life under stress increases by at least an order of magnitude. Kinetic studies at four temperatures between 180-240 C found activation energies to be 1.0 plus or minus 0.1eV.

Al:Cu accelerated testing electromigration activat↗
DOE OSTI2020

Flow through negatively charged, nanoporous membranes separates Li + and K + due to induced electromigration

Flow through negatively charged nanopores separates Li + and K + with selectivities of up to 70 and Li + passages from 20% to above 100%. Remarkably, both the Li + /K + selectivity and Li + passage initially increase with flow rate, breaking the permeability/selectivity trade-off. Modelling demonstrates that flow through the membranes creates electric fields that retard transport of cations. Selectivity increases with flow rate because the K + electromigration velocity exceeds its convective velocity, but for Li + electromigration is weaker than convection. Here, modelling also shows the importance of controlling concentration polarization. With further work, related separations might provide highly pure Li salts for battery manufacturing.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1988

Temperature control in wafer-level testing of large multi-segment electromigration test structures

The paper describes two methods for maintaining a constant metallization temperature throughout a wafer-level isothermal electromigration test of large multisegment test structures where Joule-heating is high and chip to chuck thermal contact is poor. In the first method, an initial calibration of Joule heating versus metal temperature is carried out. During the isothermal electromigration test, the Joule heating is continuously monitored and the chuck temperature is adjusted based on the calibration results to maintain a constant metal temperature. In the second method, temperature sensors are fabricated on the chip and then the sensors are used to monitor the chip temperature directly. The chuck temperature is then adjusted as needed.

Zamani, Nasser↗
NASA NTRS1991

Designing Accelerated Tests Of Electromigration

Method for design of accelerated tests of electromigration (as in microscopic conductors in integrated circuits) based partly on simplified mathematical model of electromigration and partly on error analysis. Objective to determine quickly operating life of tested components under normal operating conditions by extrapolation from lifetime measurements at operating stresses greater than normal. Involves compromise between reducing testing time by increasing stresses and reducing uncertainty in extrapolated lifetime by decreasing stresses.

Buehler, Martin G.↗
DOE OSTI2021

Explaining an unusual electromigration behavior—A comprehensive experimental and theoretical analysis using finite element method

In metallic interconnects, it is generally assumed that electromigration (EM) failure location is independent of the applied electrical current and always occurs at the highest-current-density area. Our experiments show otherwise. We designed an Al interconnect that alters its failure location by only varying the applied current density. The failure occurs near the high for a current above 2 × 10 7 A/cm 2 , but at a location with 59% of the maximum for lower current densities. Thermoreflectance thermal imaging is employed to gather time-dependent high-resolution spatial temperature distributions of the Al interconnect during EM. More importantly, we propose a computationally inexpensive 2D finite element method that tracks EM evolution in time and matches well with the observations from different experimental conditions. A detailed analysis covering the major driving forces of EM is carried out to understand the complex physics behind EM. The atomic depletion rate contributed by each force is quantitatively studied. By examining the results from every tested experimental condition, the model reveals that the temperature gradient is the key reason causing atomic depletion near the failure location. Graphical illustrations and qualitative analysis are provided to intuitively show the key findings of our work.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1991

Electromigration failure in YBa2Cu3O(7-x) thin films

Electromigration failure in highly oriented YBa2Cu3O(7-x) thin films below the superconducting transition temperature is reported here for the first time. The film on SrTiO3 failed at 86 K, 230,000 A/sq cm, while that on LaAlO3 failed at 84 K, 930,000 A/sq cm. Scanning electron microscopy and energy dispersive X-ray analysis of the films after failure shows that Cu migrates preferentially away from the failure region toward the electrode.

Vitta, Satish↗