RH1014MW Quad Precision Operational Amplifier Total Ionizing Dose Radiation Lot Acceptance Test (RLAT) Report
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The purpose of this testing was to perform a Radiation Lot Acceptance Test (RLAT) for Total Ionizing Dose (TID) of MAX4651 Low-Voltage, 4Ω, Quad, SPST, CMOS Analog Switches for the Roman Space Telescope (RST).
The purpose of this test was to validate the Intersil HSYE-117RH-Q flight lot for use in the fabrication of Europa Clipper Propulsion subsystem flight hardware. This test shall serve as the radiation lot acceptance test (RLAT) for the flight lot date with wafer lot number G3X3CQC and lot date code (LDC) 1830. Low dose rate (LDR) irradiations have been performed by the manufacturer, but only to 100 krad(Si). This test was a follow-on to the original Radiation Lot-Specific Acceptance Testing (RLAT) performed on this LDC. Application-specific load currents were used for the line regulation and load regulation measurements. All other parameters were measured with standard bias conditions as specified in the datasheet.
The purpose of this test was to characterize the Philips/NXP BFR92A NPN 5 gigahertz wide band silicon transistor for total dose response. This test shall serves as the radiation lot acceptance test (RLAT) for the lot date code (LDC) 1027. The BFR92A is packaged in a 3-pin plastic SOT23 package. Low dose rate (LDR/ELDRS) irradiations was performed.
Microsemi's silicon switching transistors, JANTXV2N2222AUB and 2N2907AUB, were tested for total ionizing dose (TID) response beginning on July 11, 2016. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.
Radiation Hardness Assurance (RHA) methodologies against Total Ionizing Dose (TID) degradation impose rigorous statistical treatments for data from a part's Radiation Lot Acceptance Test (RLAT) and/or its historical performance. However, no similar methods exist for using "similarity" data - that is, data for similar parts fabricated in the same process as the part under qualification. This is despite the greater difficulty and potential risk in interpreting of similarity data. In this work, we develop methods to disentangle part-to-part, lot-to-lot and part-type-to-part-type variation. The methods we develop apply not just for qualification decisions, but also for quality control and detection of process changes and other "out-of-family" behavior. We begin by discussing the data used in ·the study and the challenges of developing a statistic providing a meaningful measure of degradation across multiple part types, each with its own performance specifications. We then develop analysis techniques and apply them to the different data sets.
The purpose of this test was to characterize the flight lot of Texas Instruments' LM193 (flight part number is 5962-9452601Q2A) for total dose response. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) was determined.
The purpose of this test was to validate the Analog Devices (ADI) RH1021BMH-10 flight lot for use in the fabrication of Europa Clipper Propulsion subsystem flight hardware. This test shall serve as the radiation lot acceptance test (RLAT) for this flight lot with wafer lot number 769658.1 and lot date code (LDC) 1430A. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.
Semicoa's silicon switching transistors, JANTXV2N2222AUB was tested for total ionizing dose (TID) response beginning on November 4, 2019. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.
Analog Devices’ AD654 was tested for total ionizing dose (TID) response beginning on February 13, 2017. This device has the Radiation Effects and Analysis Group Identification (REAG ID) number 16-036. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.
The purpose of this testing was to characterize the InterFET Corporation U309 for total dose response. This test shall serve as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. The U309 is a discrete Junction Field Effect Transistor (JFET). High dose rate (HDR) irradiations were performed in this test so that the device susceptibility to Total Ionizing Dose (TID) could be determined.
The purpose of this test was to validate the Intersil HSYE-117RH-Q flight lot for use in the fabrication of Europa Clipper Propulsion subsystem flight hardware. This test shall serve as the radiation lot acceptance test (RLAT) for the flight lot date with wafer lot number G3X3CQC and lot date code (LDC) 1830. Low dose rate (LDR) irradiations have been performed by the manufacturer, but only to 100 krad(Si). This test determined the enhanced low dose rate sensitivity (ELDRS) of the device up to the mission specific dose of 125 krad(Si).
The Analog Devices (ADI) AD648 was tested for total ionizing dose response at the Goddard Space Flight Center (GSFC) Radiation Effects Facility (REF) beginning 1 June 2011. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.
The purpose of this test was to perform the radiation lot acceptance test (RLAT) for the OP484 (5962R0051701VDA). The quad op-amp was tested for low dose rate response. Device parameters such as input offset voltage, output voltages, supply current and gain were investigated.