SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Basic switching-element configuration can be expanded to more complex networks by coupling basic building blocks in appropriate way. In all cases, binary addressing of input and output ports is used.
Digital correlator requires only few integrated circuits to determine synchronization of two 24-bit digital words. Circuit is easily reduced or expanded to accommodate shorter or longer words and can be utilized in industrial and commercial data processing and telecommunications.
Carrousel tray speeds up testing process by feeding mass spectrometer up to 12 sealed integrated circuit packages in rapid succession for analysis of contaminants and total gas composition.
Explore the source record for details and available documents.
A new complementary MOS structure has been fabricated consisting of a p-channel DMOS transistor and an n-channel double-diffused VMOS transistor. The transconductance of each transistor was between 0.85-0.98 of the theoretical transconductance. The threshold voltages have been adjusted by either ion implantation or by adjusting the diffusion profiles. The inverter operation is similar to that of standard CMOS.
Mechanical manipulator automatically loads, transports, and unloads silicon wafers between processing stations in large-scale integrated-circuit fabrication facility at Marshall Space Flight Center thus eliminating need for human opeators at various stages in processing cycle. It also reduces possibility of wafer contamination.
Manual gives detailed test procedures for controlling silicon-wafer processing in manufacture of integrated circuits. Included among 43 test procedures are: ionic, bacterial, and solids contamination of high-purity water needed for wafer processing; crystallographic reflection, purity, and orientation; substrate dimensions and finish; thickness of deposited epitaxial films; oxide quality; photoresist characteristics; pinholes in insulating layers; metallized adhesion; and quality of ohmic contact.
Stitch-bonded flatpacks are superior to soldered dual-in-lines where size, weight, and reliability are important. Results should interest designers of packaging for complex high-reliability electronics, such as that used in security systems, industrial process control, and vehicle electronics.
Modified ion-bombardment technqiue interconnects MOS circuit elements without affecting circuit parameters. Multilevel metalization involves: surface treatment prior to metalization; first metalization; metal pattern definition and photoresist removal; dielectric deposition; second metalization; and final dielectric deposition.
This paper presents the concept of methanol decomposition using engine exhaust heat, and examines its potential for use in the operation of passenger cars, diesel trucks, and diesel-electric locomotives. Energy economy improvements of 10-20% are calculated over the representative driving cycles without a net loss in power. Some reductions in exhaust emissions are also projected.
Feasibility study looks at effectiveness of silicon nitride passivation coating against moisture and mobile ions. Coating was tested on CMOS microcircuits. Tests included temperature cycling, high-temperature electrical stress, and temperature and humidity exposure. Report concludes plastic-encapsulated circuits with protective coating exhibit high survival rates; it includes tables summarizing test results and figures that show effects of flexing.
High efficiency GaAs low-high-low IMPATTs were investigated. Theoretical analyses were employed to establish a design window for the material parameters to maximize microwave performance. Single mesa devices yielded typically 2 to 3 W with 16 to 23% efficiency in waveguide oscillator test circuits. IMPATTs with high reliability Pt/TiW/Pt/Au metallizations were subjected to temperature stress, non-rf bias-temperature stress, and rf bias-temperature stress. Assuming that temperature is the driving force behind the dominant failure mechanism, a mean-time-to-failure considerably greater than 500,000 hours is indicated by the stress tests. A 15 GHz, 4W, 56 dB gain microstrip amplifier was realized using GaAs FETs and IMPATTs. Power combining using a 3 db Lange coupler is employed in the power output stage having an intrinsic power-added efficiency of 15.7%. Overall dc-to-rf efficiency of the amplifier is 10.8%. The amplifier has greater than a 250 MHz, 1 db bandwidth; operates over the 0 deg to 50 C (base plate) temperature range with less than 0.5 db change in the power output; weighs 444 grams; and has a volume of 220 cu cm.
A measurement technique and experimental results are presented for mean velocity and velocity fluctuations in a motored, axisymmetric engine chamber simulation. Three valve configurations are considered: open orifice, open valve, and operating valve. Measurements of axial and tangential velocity components have been taken at various axial and radial positions for one compression ratio (7:1) and one rpm level (31). The measurements show that the intake stroke (in both two and four stroke operations) result in a recirculating flow with substantial turbulence generation even at the low rpm value. The four-stroke results in an axisymmetric design are novel and especially significant since the ability exists to make comparisons with theoretical, axisymmetric, turbulent results.
Explore the source record for details and available documents.
Oxides applied by a "spin-on" process have been used to fabricate capacitors on gallium arsenide and indium phosphide substrates: they might also be used with other compounds of elements in groups III to V of the periodic table. The III-to-V materials are attractive for integrated circuits because they offer responses potentially six times faster than silicon.
The development of silicon and gallium arsenide crystal growth for the production of large diameter substrates are discussed. Large area substrates of significantly improved compositional purity, dopant distribution and structural perfection on a microscopic as well as macroscopic scale are important requirements. The exploratory use of magnetic fields to suppress convection effects in Czochralski crystal growth is addressed. The growth of large crystals in space appears impractical at present however the efforts to improve substrate quality could benefit from the experiences gained in smaller scale growth experiments conducted in the zero gravity environment of space.
Random-fault densities measured in array of standard structures. Test pattern is array of standard circuit elements built into circuit chip along with, or in lieu of, integrated circuit objective process. Measurements on ray made and interpreted so fabrication process can be corrected as necessary.
Report describes technique using fault simulator implemented entirely in hardware to generate and optimize test vectors for microprocessor. Hardware fault simulator approach reduces test time, while maintaining high reliability in detecting faults.