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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The purpose of this test was to characterize the OMH3075 Hall Effects sensor degradation for total dose response. The device samples were exposed to low dose irradiations using gamma radiation. Device parameters such as magnetic operating points, leakage currents, supply currents, and rise and fall times were investigated.
The purpose of this test was to characterize the Micron 512 GB NAND (MT29F512G08AUCBBH8-6IT:B) flash memory parameter degradation for total dose response. In the test, the device was exposed to high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits and overall chip and die health were investigated.
Poster showing TID data on AFRL Ga2O3 MOSFETs, the mechanisms behind the effects, and some simulations in TCAD
The development of military and space electronics technology has traditionally been heavily influenced by the commercial semiconductor industry. The development of MOS technology, and particularly CMOS technology, as dominant commercial technologies has occurred entirely within the lifetime of the NSREC. For this reason, it is not surprising that the study of radiation interactions with MOS materials, devices and circuits has been a major theme of this conference for most of its history. The basic radiation problem in a MOS transistor is illustrated. The application of an appropriate gate voltage causes a conducting channel to form between the source and drain, so that current flows when the device is turned on. In Fig. lb, the effect of ionizing radiation is illustrated. Radiation-induced trapped charge has built up in the gate oxide, which causes a shift in the threshold voltage (that is, a change in the voltage which must be applied to turn the device on). If this shift is large enough, the device cannot be turned off, even at zero volts applied, and the device is said to have failed by going depletion mode.
Analog-to-digital (A/D) converters are critical components in many space and military systems, and there have been numerous advances in A/D converter technology that have increased the resolution and conversion time. The increased performance is due to two factors: (1) advances in circuit design and complexity, which have increased the number of components and the integration density; and (2) new process technologies, such as BiCMOS, which provide better performance, cost, and smaller size in mixed-signal circuits. High-speed A/D converters, with conversion rates above 1 MHz, present a challenge to circuit designers and test engineers. Their complex architectures and high-performance specifications result in numerous possible failure modes when they are subjected to ionizing radiation. The dominant failure mode may depend on the specific application because the fundamental effects on MOS and bipolar transistors are strongly affected by bias conditions.
This paper presents the results of measurements performed on two different flash memory types, NOR and NAND technologies.
We present a novel method of FPGA TID testing that measures propagation delay between flip-flops operating at maximum speed. Measurement is performed on-chip at-speed and provides a key design metric when building system-critical synchronous designs.
Power systems designed for use in NASA space missions are required to work reliably under harsh conditions including radiation, thermal cycling, and extreme temperature exposures. Silicon carbide devices show great promise for use in future power electronics systems, but information pertaining to performance of the devices in the space environment is very scarce. A silicon carbide N-channel enhancement-mode power MOSFET called the CMF20120 is of interest for use in space environments. Samples of the device were exposed to radiation followed by long-term thermal cycling to address their reliability for use in space applications. The results of the experimental work are presentd and discussed.
NASA's Resource Prospector (RP) is a collaborative project between multiple centers and institutions to search for volatiles at the polar regions of the Moon as a potential resource for oxygen and propellant production. The mission is rated Class D and will be the first In-Situ Resource Utilization (ISRU) demonstration on the lunar surface and at the lunar poles. Given that this mission is rated Class D, the project is considering using commercial off the shelf (COTS) electronics parts to reduce cost. However, COTS parts can be more susceptible to space radiation than typical aerospace electronic parts and carry some additional risk. Thus, prior to parts selection, having a better understanding of the radiation environment can assist designers in the parts selection process. The focus of this paper is to provide a preliminary analysis of the radiation environment from launch, through landing on the surface, and some surface stay as an initial step in determining worst case mission doses to assist designers in screening out electronic parts that would not meet the potential dose levels experienced on this mission.
The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.
A data device includes a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme that is optional and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count.
The purpose of this test was to validate the Analog Devices (ADI) RH1021BMH-10 flight lot for use in the fabrication of Europa Clipper Propulsion subsystem flight hardware. This test shall serve as the radiation lot acceptance test (RLAT) for this flight lot with wafer lot number 769658.1 and lot date code (LDC) 1430A. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.
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Explore the source record for details and available documents.
The purpose of this test was to perform the radiation lot acceptance test (RLAT) for the OP484 (5962R0051701VDA). The quad op-amp was tested for low dose rate response. Device parameters such as input offset voltage, output voltages, supply current and gain were investigated.