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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7

Methods for reducing pollutant emissions from jet aircraft.

The purpose of this paper is to define the problem of pollutant emissions from jet aircraft and to review NASA-Lewis combustion research aimed at reducing these emissions. The problem of smoke formation and results achieved in smoke reduction from commercial combustors are discussed. Experimental results of parametric tests performed on both conventional and experimental combustors over a range of combustor-inlet conditions are presented. Combustor design techniques for reducing pollutant emissions are discussed. Improved fuel atomization resulting from the use of air-assist fuel nozzles has brought about significant reductions in hydrocarbon and carbon monoxide emissions at idle. Diffuser tests have shown that the combustor-inlet airflow profile can be controlled through the use of diffuser-wall bleed and that it may thus be possible to reduce emissions by controlling combustor airflow distribution. Emissions of nitric oxide from a shortlength annular swirl-can combustor were significantly lower than those from a conventional combustor operating at similar conditions.

Butze, H. F.↗

Evaluation of an electrochemical N2/H2 gas separator

A program was successfully completed to evaluate an electrochemical nitrogen/hydrogen (N2/H2) separator for use in a spacecraft nitrogen (N2) generator. Based on the technical data obtained a N2/H2 separator subsystem consisting of an organic polymer gas permeator first stage and an electrochemical second and third stage was estimated to have the lowest total spared equivalent weight, 257 kg (566 lb), for a 15 lb/day N2 generation rate. A pre-design analysis of the electrochemical N2/H2 separator revealed that its use as a first stage resulted in too high a power requirement to be competitive with the organic polymer membrane and the palladium-silver membrane separation methods. As a result, program emphasis was placed on evaluating the electrochemical. A parametric test program characterized cell performance and established second- and third-stage electrochemical N2/H2 separator operating conditions. A design verification test was completed on the second and third stages. The second stage was then successfully endurance tested for 200 hours.

Marshall, R. D.↗

Spectral radiance measurements and calculated soot concentrations along the length of an experimental combustor

Radiometric data were obtained over a range of parametric test conditions at three positions along the length of an experimental combustor segment corresponding to the primary, intermediate, and dilution zones. The concentration of soot entrained in the combustion gases was calculated by a technique using spectral radiance measurements. Tests were conducted primarily with Jet A fuel, although limited data were taken with two fuels having higher aromatic content, diesel oil number 2 and a blend of 40 percent tetralin in Jet A fuel. Radiometric observation of the combustion gases indicated that the maximum total radiance peaked at the intermediate zone, which was located immediately upstream of the dilution holes. Soot concentrations calculated from optical measurements in the dilution zone compared favorably with those obtained by in situ gas sampling at the exhaust. The total radiance increased with the higher aromatic content fuels.

Norgren, C. T.↗

Degree of vaporization using an airblast type fuel injector for a premixed-prevaporized combustor

Vaporization data are presented which could be useful in designing premixed-prevaporized fuel preparation systems for gas turbine combustors. Lean, premixed-prevaporized combustion systems are being developed because they operate with low flame temperatures and, therefore, produce low levels of nitrogen oxides. Parametric tests of the effect of inlet air temperature, length (residence time), reference velocity, pressure and fuel-air ratio on the degree of vaporization are reported. Jet A and Diesel no. 2 fuel were tested. A formula is provided which shows the effect of inlet air temperature, residence time, reference velocity, and pressure on the degree of vaporization for a constant fuel-air ratio of 0.020. The results of the effect of inlet air temperature on the degree of vaporization using Jet A and Diesel no. 2 are nearly identical.

Tacina, R. R.↗

Diode step stress program, JANTX1N981B

Power/temperature step stress was applied to the Zener diode JANTX1N981B. Reliability of the device was determined. Control units were maintained for verification of the electrical parametric testing. Results are reported.

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Transistor step stress program for JANTX2N2920

Data on the effect of power/temperature step stress when applied to the dual transistor JANTX2N2920 manufactured by Fairchild and National Semiconductor are presented. Fifty one (51) samples from Fairchild and 44 from National Semiconductor were submitted to the process outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing.

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Transistor step stress program for JANTX2N2432A

Power/temperature step stress was applied to the transistor JANTX2N2432A manufactured by Crystalonics and Texas Instruments. A total of 48 samples from each manufacturer were submitted to the process outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests after completing the prior power/temperature step stress point.

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Diode step stress program for JANTX1N4570A

The effect of power/temperature step stress when applied to a variety of semiconductor devices was evaluated. Performance of the zener diode JANTX1N4570A manufactured by Siemens and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process outlined in Table 1. In addition, two control sample units were maintained for verification of the electrical parametric testing.

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Diode step stress program for JANTX1N5552

The effect of power/temperature step stress when applied to the switching diode JANTX1N5554 manufactured by Semtech and Micro Semiconductor was evaluated. A total of 48 samples from each manufacturer were submitted to the process outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing.

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Diode step stress program for JANTX1N2970b

Data for the purpose of evaluating the effect of power/temperature step stress was studied when applied to the zener diode JANTX1N2970B manufactured by Siemens and General Semiconductor, Inc. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. The tests for determining power/temperature stresses are described, and test results are discussed. Failure analyses for power stress, and temperature stress are presented.

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Diode step stress program for JANTX1N5615

The effect of power/temperature step stress when applied to the switching diode JANTX1N5615 manufactured by Semtech and Micro semiconductor was examined. A total of 48 samples from each manufacturer were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests after completing the prior power/temperature step stress point. Results are presented.

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Diode step stress program for JANTX1N1202A

Power/temperature step stress was applied to the switching diode JANTX1N1202A manufactured by General Electric and International Rectifier. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests after completing the prior power/temperature step stress point. Results are given.

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Transistor step stress program for JANTX2N2060

The effect of power/temperature step stress when applied to the dual transistor JANTX2N2060 manufactured by Raytheon and Motorola is reported. A total of 48 samples from each manufacturer were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests after completing the prior power/temperature step stress point. Results are given.

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Transistor step stress program for JANTX2N2219A

Power/temperature step stress was applied to the dual transistor JANTX2N2219A manufactured by Texas Instruments and National Semiconductor. A total of 48 samples from each manufacturer were submitted to the process outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to electrical tests after completing the prior power/temperature step stress point.

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Diode step stress program for JANTX1N3893

Data for the purpose of evaluating the effect of power/temperature step stress on the diode JANTX1N3893 manufactured by Siemens and Motorola is presented. A total of 48 samples from each manufacturer were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.

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Diode step stress program for JANTX1N649-1

The effect of power/temperature step stress when applied to a variety of semiconductor devices is evaluated. A total of 48 samples were submitted to be processed. Control sample units were maintained for verification of the electrical parametric testing. The test circuit was used to power all of the test devices during the power/temperature stress conditions.

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Transistor step stress program for JANTX2N2945A

Data compiled for the purpose of evaluating the effect of power/temperature step stress when applied to the transistor JANTX2N2945A manufactured by Raytheon and Teledyne is presented. A total of 48 samples from each manufacturer was divided equally (16 per group) into three groups and submitted to the processes outlined. In addition, two control units were maintained for verification of the electrical parametric testing.

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Electrical Evaluation of RCA MWS5001D Random Access Memory, Volume 1

Electrical characterization and qualification tests were performed on the RCA MWS5001D, 1024 by 1-bit, CMOS, random access memory. Characterization tests were performed on five devices. The tests included functional tests, AC parametric worst case pattern selection test, determination of worst-case transition for setup and hold times and a series of schmoo plots. The qualification tests were performed on 32 devices and included a 2000 hour burn in with electrical tests performed at 0 hours and after 168, 1000, and 2000 hours of burn in. The tests performed included functional tests and AC and DC parametric tests. All of the tests in the characterization phase, with the exception of the worst-case transition test, were performed at ambient temperatures of 25, -55 and 125 C. The worst-case transition test was performed at 25 C. The preburn in electrical tests were performed at 25, -55, and 125 C. All burn in endpoint tests were performed at 25, -40, -55, 85, and 125 C.

Klute, A.↗